RJH65T46DPQ-T0 [RENESAS]
Power Factor Correction circuit;
| 型号： | RJH65T46DPQ-T0 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Power Factor Correction circuit |
| 文件： | 总10页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJH65T46DPQ-A0
650V - 40A - IGBT
R07DS1259EJ0100
Rev.1.00
Application: Power Factor Correction circuit
May 18, 2015
Features
Low collector to emitter saturation voltage
CE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
V
Built in fast recovery diode in one package
Trench gate and thin wafer technology (G7H series)
High speed switching
tf = 45 ns typ. (at VCC = 400 V, VGE = 15 V , IC = 40 A, Rg = 10 , Ta = 25°CInductive load)
Operation frequency (20kHz ≤ f ˂ 100kHz)
Not guarantee short circuit withstand time
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1
2
3
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
V
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
VCES / VR
650
30
VGES
V
Collector current
Tc = 25 °C
IC
80
A
Tc = 100 °C
IC
iC(peak) Note1
IDF
40
A
Collector peak current
300
A
Collector to emitter diode Tc = 25 °C
Forward current
30
A
Tc = 100 °C
IDF
15
A
Collector to emitter diode forward peak current
Collector dissipation
iDF(peak) Note1
100
A
PC
340.9
0.44
1.33
175
W
Junction to case thermal impedance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
j-c
°C/W
°C/ W
°C
°C
j-cd
Tj Note2
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 1 of 9
RJH65T46DPQ-A0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector current
/ Diode reverse current
ICES / IR
100
A
VCE = 650 V, VGE = 0
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Qg
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
±1
7.0
2.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
A
V
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1.33 mA
Note3
1.8
3000
92
V
IC = 40 A, VGE = 15V
VCE = 25 V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
VGE = 0
Output capacitance
Reveres transfer capacitance
Total gate charge
f = 1 MHz
55
138
22
VGE = 15 V
VCE = 400 V
IC = 40 A
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Qge
Qgc
td(on)
tr
57
45
VCC = 400 V
VGE = 15 V
30
IC = 40 A
Turn-off delay time
Fall time
td(off)
tf
170
45
Rg = 10
TC = 25 °C
Inductive load
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Eon
0.45
0.55
1.00
45
Note4
Eoff
Etotal
td(on)
tr
VCC = 400 V
VGE = 15 V
30
IC = 40 A
Rg = 10
Turn-off delay time
Fall time
td(off)
tf
185
50
TC = 150 °C
Inductive load
Turn-on loss energy
Turn-off loss energy
Total switching energy
Eon
0.57
0.63
1.20
Note4
Eoff
Etotal
FRD forward voltage
VF
trr
—
—
1.7
2.2
—
V
IF = 15 A Note3
FRD reverse recovery time
Notes: 3. Pulse test
100
ns
IF = 15 A, diF/dt = 300 A/s
4. Switching time test circuit and waveform are shown below.
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 2 of 9
RJH65T46DPQ-A0
Preliminary
Main Characteristics
Collector Dissipation vs.
Maximum DC Collector Current vs.
Case Temperature
Case Temperature
120
100
80
60
40
20
0
400
300
200
100
0
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
0
25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
Typical Transfer Characteristics
160
120
1000
100
10
VCE = 10 V
Pulse Test
80
40
0
Tc = 25°C
1
150
4
°C
Tc = 25°C
Single pulse
0.1
0
8
12
16
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Typical Output Characteristics
Typical Output Characteristics
160
120
80
160
120
80
Pulse Test
Pulse Test
9.0V
9.0V
Tc = 25°C
Tc = 150°C
8.5V
8.0V
10 V
15 V
10 V
15 V
8.5V
8.0V
7.5V
40
0
40
0
VGE = 7.0 V
VGE = 7.5 V
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 3 of 9
RJH65T46DPQ-A0
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
5
Tc = 25
°C
Tc = 150
°C
IC = 80 A
40 A
Pulse Test
Pulse Test
4
3
2
1
0
4
3
2
1
0
20 A
IC = 80 A
40 A
20 A
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
10
8
4.0
VGE = 15 V
Pulse Test
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IC = 80 A
40 A
IC = 10 mA
1.33 mA
6
4
20 A
2
VCE = 10 V
Pulse Test
0
−25
0
25 50 75 100 125 150
−25
0
25 50 75 100 125 150
Case Temparature Tc (°C)
Case Temparature Tc ( C)
°
Frequency Characteristics (Typical)
120
100
80
Ic(max)
60
0
Collector current wave
(Square wave)
40
20
0
Tj = 175°C, Tc = 90°C, VCE = 400 V
GE = 15 V, Rg = 10Ω , duty = 50%
V
1
10
100
Frequency f (kHz)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 4 of 9
RJH65T46DPQ-A0
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
10
1000
100
10
VCC = 400 V, VGE = 15 V
Rg = 10 Ω, Tc = 150
VCC = 400 V, VGE = 15 V
°C
Rg = 10 Ω, Tc = 150°C
t
d(off)
1
t
f
Eoff
Eon
t
d(on)
t
r
0.1
10
20
30
50 70 100
10
20
30
50 70 100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Switching Characteristics (Typical) (3)
VCC = 400 V, VGE = 15 V
10000
1000
100
VCC = 400 V, VGE = 15 V
IC = 40 A, Tc = 150°C
IC = 40 A, Tc = 150°C
1
Eoff
Eon
t
d(off)
t
d(on)
t
t
f
r
10
0.1
1
10
100
1
10
100
Gate Registance Rg (Ω)
Gate Registance Rg (Ω)
(Inductive load)
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
1000
100
10
10
VCC = 400 V, VGE = 15 V
VCC = 400 V, VGE = 15 V
IC = 40 A, Rg = 10 Ω
IC = 40 A, Rg = 10 Ω
t
t
d(off)
1
Eoff
Eon
t
f
d(on)
t
r
0.1
25
50
75
100
125
150
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 5 of 9
RJH65T46DPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Dynamic Input Characteristics (Typical)
10000
1000
100
800
600
400
200
0
16
12
8
VGE = 0 V Tc = 25
°
C
VCC = 400 V
IC = 40 A
f = 1 MHz
VGE
Tc = 25°C
Cies
4
Coes
Cres
VCE
40
10
0
200
0
50
100 150 200 250 300
0
80
120
160
Collector to Emitter Voltage VCE (V)
Gate Charge Qg (nC)
Reverse Recovery Time vs.
Forward Current (Typical)
Forward Current vs. Forward Voltage (Typical)
100
1000
100
10
VCC = 300 V
diF/dt = 300 A/us
80
Tc = 150°C
Tc = 25°C
60
40
20
0
150°C
25°C
VCE = 0 V
Pulse Test
1
10
Forward Current IF (A)
100
0
1
2
3
4
5
C-E Diode Forward Voltage VCEF (V)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 6 of 9
RJH65T46DPQ-A0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
1
D = 1
0.5
0.2
θ – c(t) = γs (t) • θ – c
θ – c = 0.44°C/W, Tc = 25°C
j
j
j
0.05
0.02
0.1
PW
T
PDM
D =
PW
T
0.01
1 shot pulse
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
1
D = 1
0.5
0.2
θ – c(t) = γs (t) • θ – c
θ – c = 1.33°C/W, Tc = 25°C
j
0.1
j
j
0.05
0.02
0.1
PW
T
PDM
D =
0.01
1 shot pulse
PW
T
0.01
10 μ
100 μ
1 m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 7 of 9
RJH65T46DPQ-A0
Preliminary
Waveform
Switching Time Test Circuit
90%
VGE
10%
Diode clamp
L
RJU6054TDPP
IC
90%
90%
D.U.T
VCC
Rg
10%
tf
10%
tr
td(off)
td(on)
Diode Reverse Recovery Time Test Circuit
VCC
Waveform
IF
D.U.T
diF/dt
trr
L
IF
0
Irr
0.5 Irr
0.9 Irr
Rg
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 8 of 9
RJH65T46DPQ-A0
Preliminary
Package Dimensions
Package Name
TO-247A
JEITA Package Code
RENESAS Code
PRSS0003ZH-A
Previous Code
MASS[Typ.]
6.14g
Unit: mm
5.02 ± 0.19
3.60 ± 0.1
15.94 ± 0.19
+ 0.1
– 0.2
2.10
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
5.45
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJH65T46DPQ-A0#T0
240 pcs
R07DS1259EJ0100 Rev.1.00
May 18, 2015
Page 9 of 9
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
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third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
the product's quality grade, as indicated below.
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equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
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range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
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malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
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please evaluate the safety of the final products or systems manufactured by you.
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contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
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12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2015 Renesas Electronics Corporation. All rights reserved.
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