RJJ0621DPP-00-T2 [RENESAS]
P Channel Power MOS FET High Speed Switching; P沟道功率MOS FET的高速开关
| 型号： | RJJ0621DPP-00-T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | P Channel Power MOS FET High Speed Switching |
| 文件： | 总7页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJJ0621DPP
P Channel Power MOS FET
High Speed Switching
REJ03G1624-0200
Rev.2.00
Jun 16, 2008
Features
•
•
•
•
VDSS : –60 V
RDS(on) : 56 mΩ (MAX)
ID : –25 A
Lead Mount Type (TO-220FN)
Outline
RENESAS Package code: PRSS0003AB-A
Package name : TO-220FN)
3
(
1. Gate
2. Drain
3. Source
1
1
2
3
2
Application
•
DC-DC converter, Motor control, Solenoid control, etc.
Absolute Maximum Ratings
(Tc = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current (DC)
Symbol
VDSS
VGSS
ID
Ratings
–60
Unit
V
Conditions
VGS = 0 V
+10/–20
–25
V
VDS = 0 V
A
Drain current (Pulsed)*1
ID(pulse)
IAP
–50
A
Avalanche current
–25
A
L = 100 µH
Channel dissipation
Pch
35
W
Channel to case thermal impedance
Channel temperature
Storage temperature
θch-c
Tch
3.57
°C/W
°C
°C
–55 to +150
–55 to +150
Tstg
Note: 1. Pulse width limited by safe operating area.
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 1 of 6
RJJ0621DPP
Electrical Characteristics
(Tc = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min.
–60
—
Typ.
—
Max.
—
Unit
V
Conditions
Drain to source breakdown voltage
Drain to source leakage current
Gate to source leak current
Gate to source leak current
Gate to source cutoff voltage
ID = –10 mA, VGS = 0 V
VDS = –60 V, VGS = 0 V
VGS = +10 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
ID = –1 mA, VDS = –10 V
ID = –12.5 A, VGS = –10 V
ID = –12.5 A, VGS = –4.5 V
VDS = –10 V
—
–1
µA
µA
µA
V
IGSS
—
—
0.1
–0.1
–2.5
56
IGSS
—
—
VGS(off)
RDS(on)
–1.0
—
–1.7
45
Static drain to source on state
resistance
mΩ
mΩ
pF
pF
pF
ns
—
65
95
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
—
1550
190
100
15
—
V
GS = 0 V
f = 1 MHz
—
—
—
—
—
—
VDD = –30 V
ID = –12.5 A
—
25
—
ns
V
GS = –10 V
Turn-off delay time
Fall time
td(off)
tf
—
100
50
—
ns
RG = 25 Ω
—
—
ns
Body-drain diode forward voltage
VDF
—
–0.9
–1.5
V
IF = –12.5 A, VGS = 0 V
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 2 of 6
RJJ0621DPP
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
–100
–10
50
40
30
20
10
10
µ
s
1 ms
–1
Operation in
this area is
limited by RDS(on)
–0.1
Ta = 25°C
1 shot Pulse
–0.01
0
50
100
150
200
–0.1
–1
–10
–100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
–50
–40
–30
–20
–10
–30
–20
–7 V
–6 V
–8 V
VDS = –10 V
Pulse Test
–10 V
–5 V
–4 V
V
GS = –3 V
–10
Tc = 75°C
25°C
Pulse Test
–4 –5
Drain to Source Voltage VDS (V)
–25°C
0
0
0
–3
–4
–5
–1
–2
–3
–1
–2
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs.Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1000
150
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
100
100
ID = –25 A
VGS = –4.5 V
–10 V
50
–5 A
–12.5 A
10
–1
–10
Drain Current ID (A)
–100
0
–2
–4
–6
–8
–10
Gate to Source Voltage VGS (V)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 3 of 6
RJJ0621DPP
Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
120
100
10
VGS = –10 V
Pulse Test
ID = –25 A
100
80
Tc = –25°C
25°C
75°C
60
–12.5 A
–5 A
40
1
20
0
VDS = –10 V
Pulse Test
0.1
–0.1
–25
0
25 50 75 100 125 150
–1
–10
–100
Drain Current ID (A)
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverce Recovery Time
1000
1000
100
VGS = 0
f = 1 MHz
di/dt = –100 A/ µs
VGS = 0 V
Tc = 25°C
Ciss
100
Coss
10
1
10
1
Crss
–1
–10
–100
–1
–10
–100
Drain to Source Voltage VDS (V)
D
r
a
i
n
t
o
S
o
u
r
c
e
Vo
l
t
a
g
e
VVD
(V)
S
Switching Characteristics
Dynamic Input Characteristics
1000
100
0
0
ID = –25 A
–10 V
–20
–4
–8
VDD = –60 V
–30 V
–10 V
–30 V
t
d(off)
t
f
t
r
–40
t
d(on)
10
1
VDD = –60 V
–60
–80
–12
–16
VGS = –10 V, VDD = –30 V
W = 5 µs, duty ≤ 1%
P
R
G = 25 Ω
–1
–10
–100
0
8
16
24
32
40
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 4 of 6
RJJ0621DPP
Reverse Drain Current vs.
Source to Drain Voltage
Avalanche Current vs. Case Temperature
–30
–20
–10
–30
Pulse Test
Tc = 25°C
L = 100 µH
–25
–20
–15
–10
–5 V
–10 V
VGS = 0, 5 V
–5
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Source to Drain Voltage VSDF (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
D = 1
1
0.5
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/W, Tc = 25°C
0.1
0.01
PW
T
PDM
D =
1shot pulse
PW
T
1 m
10 m
100 m
1
10
100 µ
Pulse Width PW (s)
Switching Time Test Circuit
Switching Time Waveform
10%
Vin
Vout
Monitor
Vin Monitor
D.U.T.
25 Ω
RL
90%
90%
90%
VDD
= –30 V
Vin
–10 V
10%
10%
Vout
t
t
d(off)
t
r
t
f
d(on)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 5 of 6
RJJ0621DPP
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
RENESAS Code
PRSS0003AB-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
2.8 0.2
10 0.3
φ3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
0.75 0.15
2.54 0.25
2.54 0.25
Ordering Information
Part No.
Quantity
Shipping Container
RJJ0621DPP-00-T2
50 pcs
Magazine (Tube)
REJ03G1624-0200 Rev.2.00 Jun 16, 2008
Page 6 of 6
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