RJK2006DPJ [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJK2006DPJ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总8页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0512-0200
Rev.2.00
Nov 19, 2009
Features
•
•
•
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L)
:
PRSS0004AE-B
LDPAK(S)-(1)
:
PRSS0004AE-C
LDPAK(S)-(2) )
D
4
4
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
2
3
1
2
3
1
2
3
S
RJK2006DPJ
RJK2006DPE
RJK2006DPF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Symbol
VDSS
VGSS
ID
Ratings
200
Unit
V
V
±30
Drain current
40
A
Note1
Drain peak current
ID (pulse)
IDR
100
A
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
40
A
Note1
IDR (pulse)
100
A
Note3
IAP
27
A
Note3
Avalanche energy
EAR
48.6
100
mJ
W
°C/W
°C
°C
Channel dissipation
Pch Note2
θch-c
Tch
Channel to case thermal impedance
Channel temperature
1.25
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 1 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
200
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
ID = 10 mA, VGS = 0
—
1
μA
μA
V
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 20 A, VDS = 10 V Note4
ID = 20 A, VGS = 10 VNote4
IGSS
—
—
±0.1
4.5
—
VGS(off)
|yfs|
3.0
15
—
26
S
Static Drain to Source on state
resistance
RDS(on)
—
0.052
0.059
Ω
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
—
1800
330
43
—
—
—
—
—
—
—
—
—
—
1.5
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
f = 1 MHz
Reverse transfer capacitance
Turn-on delay time
30
ID = 20 A
VGS = 10 V
Rise time
180
85
RL = 5 Ω
Rg = 10 Ω
Turn-off delay time
td(off)
tf
Fall time
100
43
Total Gate charge
Qg
VDD = 160 V
V
GS = 10 V
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Qgs
Qgd
VDF
trr
11
ID = 40 A
IF = 40 A, VGS = 0 Note4
20
1.0
150
0.8
ns
μC
IF = 40 A, VGS = 0
diF/dt = 100 A/μs
Body-Drain diode reverse recovery
charge
Qrr
Notes: 4. Pulse test
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 2 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Main Characteristics
Typical Output Characteristics
7 V
Maximum Safe Operation Area
1000
50
40
30
20
10
0
10 V
6.5V
8 V
100
Ta = 25°C
Pulse Test
6 V
10
Operation in this
area is limited by
1
5.5 V
RDS(on)
0.1
VGS = 5 V
Tc = 25°C
1 shot
0.01
0.1
1
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
50
1
VGS = 10 V
Ta = 25°C
Pulse Test
VDS = 10 V
Pulse Test
40
30
20
10
0
0.1
Tc = 75°C
25°C
−25°C
0.01
0
2
4
6
8
10
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
100
10
0.20
0.16
0.12
0.08
0.04
0
V
GS = 10 V
Pulse Test
ID = 40 A
20 A
10 A
di / dt = 100 A / μs
V
GS = 0, Ta = 25°C
1
10
100
-25
0
25 50 75 100 125 150
Reverse Drain Current IDR (A)
Case Temperature Tc (°C)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 3 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
10000
400
16
ID = 40 A
Ta = 25°C
VGS
Ta = 25 °C
Ciss
VDD = 160 V
100 V
300
200
12
8
1000
50 V
VDS
Coss
100
100
0
4
0
VDD = 160 V
Crss
100 V
50 V
V
GS = 0
f = 1 MHz
10
0
20
40
60
80
100
50
100
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
50
5
4
3
VDS = 10 V
VGS = 0 V
Ta = 25 °C
40 Pulse Test
30
I
D = 10 mA
1 mA
0.1 mA
2
1
0
20
10
0
-25
0
25 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 4 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 1.25°C/W, Tc = 25°C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 μ
100 μ
1 m
10 m
Pulse Width PW (s)
100 m
1
10
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
RL
10%
10%
Vin
10Ω
VDD
= 100 V
Vin
10 V
Vout
10%
90%
90%
td(off)
td(on)
t
f
tr
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 5 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
Package Dimensions
• RJK2006DPJ
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Previous Code
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 ± 0.2
1.3 ± 0.15
10.2 ± 0.3
1.3 ± 0.2
1.37 ± 0.2
2.49 ± 0.2
+ 0.2
0.86
– 0.1
0.76 ± 0.1
2.54 ± 0.5
0.4 ± 0.1
2.54 ± 0.5
• RJK2006DPE
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
2.49 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 ± 0.2
0.4 ± 0.1
+ 0.2
1.3 ± 0.2
2.54 ± 0.5
0.86
– 0.1
2.54 ± 0.5
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 6 of 7
RJK2006DPJ, RJK2006DPE, RJK2006DPF
• RJK2006DPF
Package Name
LDPAK(S)-(2)
JEITA Package Code
RENESAS Code
Previous Code
MASS[Typ.]
1.35g
Unit: mm
PRSS0004AE-C LDPAK(S)-(2) / LDPAK(S)-(2)V
4.44 ± 0.2
7.8
6.6
10.2 ± 0.3
1.3 ± 0.15
2.49 ± 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 ± 0.2
0.4 ± 0.1
+ 0.2
– 0.1
1.3 ± 0.2
0.86
2.54 ± 0.5
2.54 ± 0.5
Ordering Information
Part No.
Quantity
Shipping Container
RJK2006DPE-00-J3
1000 pcs
Taping
REJ03G0512-0200 Rev.2.00 Nov 19, 2009
Page 7 of 7
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