RJL6014DPP-00-T2 [RENESAS]
Silicon N Channel MOS FET High Speed Power Switching; 硅N沟道MOS FET高速电源开关
| 型号： | RJL6014DPP-00-T2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 文件： | 总7页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RJL6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0262EJ0200
(Previous: REJ03G1853-0100)
Rev.2.00
Mar 01, 2011
Features
Built-in fast recovery diode
trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C)
Low on-resistance
RDS(on) = 0.52 typ. (at ID = 7.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
1. Gate
2. Drain
3. Source
G
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Symbol
VDSS
Ratings
Unit
V
600
Gate to source voltage
VGSS
30
V
Note4
Drain current
ID
15
A
Note1
Drain peak current
ID (pulse)
IDR
45
A
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
15
A
Note1
IDR (pulse)
45
A
Note3
IAP
4
0.87
A
Note3
Avalanche energy
EAR
mJ
W
Channel dissipation
Pch Note2
ch-c
Tch
35
Channel to case thermal impedance
Channel temperature
3.57
C/W
C
C
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 1 of 6
RJL6014DPP
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
IDSS
Min
600
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
ID = 10 mA, VGS = 0
—
10
A
A
V
VDS = 600 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 7.5 A, VGS = 10 V Note5
IGSS
—
—
±0.1
4.0
VGS(off)
RDS(on)
2.0
—
—
Static drain to source on state
resistance
0.520
0.635
Input capacitance
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
—
—
—
—
1700
167
20
—
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = 25 V
VGS = 0
Output capacitance
Reverse transfer capacitance
Turn-on delay time
f = 1 MHz
—
31
—
ID = 7.5 A
VGS = 10 V
Rise time
23
—
RL = 40
Rg = 10
Turn-off delay time
td(off)
tf
101
22
—
Fall time
—
Total gate charge
Qg
46
—
VDD = 480 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Qgs
Qgd
VDF
trr
7.8
20.8
1.05
180
—
ID = 15 A
IF = 15 A, VGS = 0 Note5
—
1.75
—
ns
IF = 15 A, VGS = 0
diF/dt = 100 A/s
Notes: 5. Pulse test
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 2 of 6
RJL6014DPP
Preliminary
Main Characteristics
Typical Output Characteristics
Maximum Safe Operation Area
20
16
12
8
100
10
Ta = 25°C
Pulse Test
5 V
6 V, 8 V, 10 V
4.8 V
1
4.6 V
4.4 V
Operation in this
area is limited by
RDS(on)
0.1
4.2 V
4
0.01
0.001
VGS = 4 V
Ta = 25°C
1 shot
0
0.1
1
10
100
1000
4
8
12
16
20
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
10
100
10
VGS = 10 V
Ta = 25°C
Pulse Test
VDS = 10 V
Pulse Test
Tc = 75°C
25°C
1
1
−25°C
0.1
0.01
0.1
0
2
4
6
8
1
10
100
Drain Current ID (A)
Gate to Source Voltage VGS (V)
Body-Drain Diode Reverse
Recovery Time (Typical)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
1000
100
10
2.0
Pulse Test
V
GS = 10 V
1.6
1.2
0.8
0.4
0
ID = 15 A
7.5 A
3 A
di / dt = 100 A / μs
V
GS = 0, Ta = 25°C
1
10
100
-25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Reverse Drain Current IDR (A)
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 3 of 6
RJL6014DPP
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Dynamic Input Characteristics (Typical)
10000
1000
100
800
16
VGS
ID = 15 A
Ta = 25 °C
Ciss
VDD = 480 V
300 V
600
400
12
100 V
VDS
8
Coss
Crss
10
200
0
4
VDD = 480 V
V
GS = 0
300 V
100 V
f = 1 MHz
Ta = 25°C
0
1
0
20
40
60
80
100
100
200
300
Drain to Source Voltage VDS (V)
Gate Charge Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
5
4
3
50
40
30
VGS = 0 V
Ta = 25 °C
Pulse Test
VDS = 10 V
I
D = 10 mA
1 mA
2
1
0
20
10
0.1 mA
0
0
-25
0
25 50 75 100 125 150
0.4
0.8
1.2
1.6
2.0
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 4 of 6
RJL6014DPP
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
Tc = 25°C
D = 1
0.5
0.2
0.1
0.1
0.05
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/W, Tc = 25°C
PW
T
0.01
PDM
D =
PW
T
0.001
10 μ
100 μ
1 m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Waveform
Vout
Monitor
90%
D.U.T.
10%
10%
RL
Vin
10 Ω
Vout
10%
VDD
= 300 V
Vin
10 V
90%
90%
t
t
t
t
f
d(on)
r
d(off)
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 5 of 6
RJL6014DPP
Preliminary
Package Dimensions
Package Name
TO-220FN
JEITA Package Code
⎯
RENESAS Code
PRSS0003AB-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
2.8 ± 0.2
10 ± 0.3
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
Ordering Information
Orderable Part Number
Quantity
Shipping Container
Box (Tube)
RJL6014DPP-00-T2
1050 pcs
R07DS0262EJ0200 Rev.2.00
Mar 01, 2011
Page 6 of 6
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