UPA1731G-E2-A [RENESAS]
N Channel Power MOSFET, SOP, /Embossed Tape;
| 型号： | UPA1731G-E2-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | N Channel Power MOSFET, SOP, /Embossed Tape |
| 文件： | 总10页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1010
Rectronics Corporation
Issued by: Renesas Electronics Corporation (m)
Send any inquiries to http://www.renesas.c
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6.
7.
Renesas Electronics has used reasonable care in preparing the information includs document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assuy whatsoever for any damages
incurred by you resulting from errors in or omissions from the information
Renesas Electronics products are classified according to the following tard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electroduct’s quality grade, as
indicated below. You must check the quality grade of each Renesing it in a particular
application. You may not use any Renesas Electronics product as “Specific” without the prior
written consent of Renesas Electronics. Further, you may nroduct for any application for
which it is not intended without the prior written consent s Electronics shall not be in any way
liable for any damages or losses incurred by you or thif any Renesas Electronics product for an
application categorized as “Specific” or for which te you have failed to obtain the prior written
consent of Renesas Electronics. The quality gradroduct is “Standard” unless otherwise
expressly specified in a Renesas Electronics d
“Standard”:
Computers; office equipent; test and measurement equipment; audio and visual
equipment; home elels; personal electronic equipment; and industrial robots.
“High Quality”: Transportation eqhips, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; equipment not specifically designed for life support.
“Specific”:
Aircraft; aee repeaters; nuclear reactor control systems; medical equipment or
systems fe support devices or systems), surgical implantations, or healthcare
interany other applications or purposes that pose a direct threat to human life.
8.
9.
You should use the Rescribed in this document within the range specified by Renesas Electronics,
especially with respect toperating supply voltage range, movement power voltage range, heat radiation
characteristics, installation characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use Electronics products beyond such specified ranges.
Although Renesas Electronics endors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1731
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The µPA1731 is P-Channel MOS Field Effect Transistor
designed for power management applications of
8
5
notebook computers and Li-ion battery protection circuit.
; Source
; Gate
; Drain
1,2,3
4
5,6,7,8
FEATURES
• Low on-resistance
6.0 ±0.3
4.4
RDS(on)1 = 10.3 mΩ TYP. (VGS = –10 V, ID = –5.0 A)
RDS(on)2 = 14.6 mΩ TYP. (VGS = –4.5 V, ID = –5.0 A)
RDS(on)3 = 16.5 mΩ TYP. (VGS = –4.0 V, ID = –5.0 A)
• Low Ciss : Ciss =2600 pF TYP.
0.8
0.5 ±0.2
0.10
• Built-in G-S protection diode
ax.
• Small and surface mount package (Power SOP8)
0.12 M
ORDERING INFORMATION
PART NUMBER
PAC
µPA1731G
P
ABSOLUTE MAXIMUM erminals are connected.)
EQUIVALENT CIRCUIT
Drain to Source Voltage
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
S
ID(DC)
ID(pulse)
PT
–30
V
V
Drain
20
10
40
m
m
m
A
Body
Diode
Gate
A
2.0
150
W
°C
Gate
Protection
Diode
Channel Temperature
Tch
Source
Storage Temperature
Tstg
–55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
Date Published May 2001 NS CP(K)
Printed in Japan
G14285EJ2V1DS00 (2nd edition)
The mark ★ shows major revised points.
1999
©
µPA1731
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
RDS(on)1
RDS(on)2
RDS(on)3
VGS(off)
| yfs |
IDSS
TEST CONDITIONS
VGS = –10 V, ID = –5.0 A
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
10.3
14.6
16.5
13.0
19.5
22.0
mΩ
mΩ
mΩ
V
VGS = –4.5 V, ID = –5.0 A
VGS = –4.0 V, ID = –5.0 A
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –5.0 A
VDS = 30 V, VGS = 0 V
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
–1.0 –1.6 –2.5
8.0
18.0
S
–1
10
µA
µA
pF
pF
pF
ns
VGS = 20 V, VDS = 0 V
IGSS
m
m
Ciss
VDS = –10 V
VGS = 0 V
2600
810
350
32
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-on Delay Time
Crss
f = 1 MHz
td(on)
ID = –5.0 A
Rise Time
tr
VGS(on) = –10 V
VDD = –15 V
RG = 10 Ω
185
5
110
46
ns
Turn-off Delay Time
td(off)
ns
Fall Time
tf
ns
Total Gate Charge
QG
ID = –10 A
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QGS
VDD = –
VG
6.5
QGD
12
VF(S-D)
0.80
Reverse Recovery Time
Reverse Recovery Charge
t
50
46
ns
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITC
D.U.T.
=2mA
D.U.T.
I
G
R
L
90%
V
GS (on)
10%
10%
RG
0
50Ω
PG.
PG.
RG
= 10Ω
V
DD
V
90%
ID
90%
10%
I
D
V
0
GS
I
D
0
Wave Form
t
d (on)
t
r
t
d (off)
t
f
τ
t
on
t
off
µ
τ = 1 s
Duty Cycle
≤ 1 %
2
Data Sheet G14285EJ2V1DS
µPA1731
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
2.4
2.0
1.6
1.2
0.8
0.4
Mounted on ceramic
substrate of
1200 mm2 x 2.2 mm
100
80
60
40
20
0
20 40 80 100 120 140 160
emperature - ˚C
0
20 40 60 80 100 120 140 160
- Ambient Temperature - ˚C
T
T
A
★
FORWARD BIAS SAFE OPERATING AREA
−100
−10
−1
ited
I
D(pulse) = 40 A
)
Lim
10 V
PW = 1 ms
−
RDS(on)
(at V
=
GS
Rsubstrate of
10 ms
I
D(DC) = 10 A
m
100 ms
P
o
w
er Dissipation Limited
−0.1
TA
= 25˚C
Single Pulse
−0.01
−1
−0.1
V
DS -
Drain t
ERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 62.5˚C
100
10
1
0.1
0.01
Mounted on ceramic
substrateof1200mm2 x 2.2 mm
Single Pulse
0.001
10m
10
100
1m
100m
100
1000
µ
µ
1
10
PW - Pulse Width - s
3
Data Sheet G14285EJ2V1DS
µPA1731
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
−100
DRAIN TO SOURCE VOLTAGE
−50
−40
Pulsed
Pulsed
−4.5V −4.0V
−10
−1
V
GS =−10V
T = −50˚C
A
−25˚C
25˚C
−30
75˚C
125˚C
150˚C
−0.1
−0.01
−20
−10
−0.001
−0.0001
V
DS =−10V
−0.4
DS to Source Voltage - V
−0.8
0
−0.6
−0.2
0
−1.0
−2.0
−3.0
−4.0
V
VGS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRESISTANCE vs.
100
10
1
Pulsed
TA
= −50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
I
D
=−10 A
−5.0 A
−15
0
−5
−10
−0.1
−1
I
D-
V
GS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DRAIN TO SO
RESISTANCE vsNT
20
15
−2.0
−1.5
−1.0
V
DS = −10 V
Pulsed
I
D
= −1 mA
V
GS = −4.0 V
−4.5 V
−10 V
10
5
−0.5
0
0
−0.1
−1
−10
−100
−100
150
−50
0
50
100
ID - Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet G14285EJ2V1DS
µPA1731
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
25
100
10
Pulsed
V
GS = −4.0 V
−4.5 V
VGS = −4.5 V
0 V
20
15
1
−10 V
10
5
0.1
0.01
I
D
= −5.0 A
0.001
0
0
1.0
1.5
0
.5
−50
100
150
50
Vto Drain Voltage - V
T
ch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
RISTICS
−10000
−1000
t
r
Ciss
off)
t
f
Coss
t
d(on)
C
−100
−10
1
V
V
=−15V
DS =−10V
V
GS = 0 V
RGS
G
= 10Ω
f = 1 MHz
−0.1
−1
−1
−10
−100
−0.1
V
DS - Drain
I
D
- Drain Current - A
REVERSE R
DIODE CURR
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
−30
−20
−10
−14
10000
1000
µ
dt=100A/
s
I
D
=−10A
GS =0V
−12
−10
−8
V
GS
V
DS = −24 V
−15 V
−6 V
100
10
1
−6
−4
−2
V
DS
0
0
10
20
30
40
50
−1
−10
−100
−0.1
Q
G
- Gate Charge - nC
I
F
- Diode Current - A
5
Data Sheet G14285EJ2V1DS
µPA1731
[MEMO]
6
Data Sheet G14285EJ2V1DS
µPA1731
[MEMO]
7
Data Sheet G14285EJ2V1DS
µPA1731
•
The information in this document is current as of May, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any fy any means without prior
written consent of NEC. NEC assumes no responsibility for any erropear in this document.
NEC does not assume any liability for infringement of patents, copectual property rights of
third parties by or arising from the use of NEC semiconductor cument or any other
liability arising from the use of such products. No license, e, is granted under any
patents, copyrights or other intellectual property rights of N
•
•
•
Descriptions of circuits, software and other related inare provided for illustrative
purposes in semiconductor product operation aThe incorporation of these
circuits, software and information in the desit shall be done under the full
responsibility of customer. NEC assumes no es incurred by customers or third
parties arising from the use of these circuit
While NEC endeavours to enhance the qf NEC semiconductor products, customers
agree and acknowledge that the posannot be eliminated entirely. To minimize
risks of damage to property oto persons arising from defects in NEC
semiconductor products, custoicient safety measures in their design, such as
redundancy, fire-containmen
NEC semiconductor produllowing three quality grades:
"Standard", "Special" aic" quality grade applies only to semiconductor products
developed based ouality assurance program" for a specific application. The
recommended apptor product depend on its quality grade, as indicated below.
Customers must cheof each semiconductor product before using it in a particular
application.
"Standard": Computers, ofment, communications equipment, test and measurement equipment, audio
and visual equip, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
UPA1733G
Power Field-Effect Transistor, 10A I(D), 30V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, POWER, SOP-8
NEC
UPA1741TP-AZ
Small Signal Field-Effect Transistor, 5A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
NEC
UPA1742TP-AZ
Small Signal Field-Effect Transistor, 7A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8
NEC
©2020 ICPDF网 联系我们和版权申明