UPA2660T1R-E2-AX [RENESAS]

DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m; 双N沟道MOSFET的20 V ， 4.0 A， 42米


型号：	UPA2660T1R-E2-AX
厂家：	RENESAS TECHNOLOGY CORP
描述：	DUAL N-CHANNEL MOSFET 20 V, 4.0 A, 42 m 双N沟道MOSFET的20 V ， 4.0 A， 42米
文件：	总7页 (文件大小：268K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

μPA2660T1R

DUAL N-CHANNEL MOSFET

R07DS0999EJ0100

Rev.1.00

Jan 16, 2013

20 V, 4.0 A, 42 mΩ

Description

The μPA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application.

This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications

such as power switch of portable machine and so on.

Features

•

DS MAXIMUM RATINGS 20V(T_A= 25°C)

2.5V drive available

Low on-state resistance

⎯ R_{DS (on)1}= 42 mΩ MAX. (V_GS= 4.5 V, I_D= 2.0 A)

⎯ R_{DS (on)2}= 62 mΩ MAX. (V_GS= 2.5 V, I_D= 2.0 A)

Built-in gate protection diode

•

Lead-free and Halogen-free

6pinHUSON2020(Dual)

Ordering Information

Part Number

μPA2660T1R-E2-AX^∗

Package

6pinHUSON2020(Dual)

Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

V_DSS

V_GSS

I_D(DC)

I_D(pulse)

P_T1

Ratings

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC)

±12

±4.0

Drain Current (pulse) ^∗

±16

Total Power Dissipation (1 unit, 5 s) ^∗

Total Power Dissipation (2 units, 5 s) ^∗

1.5

°C

P_T2

2.3

Channel Temperature

T_ch

150

Storage Temperature

T_STG

–55 to +150

Notes: ∗1. PW≤10 μs, Duty Cycle≤1%

∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt

Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled

with caution for electrostatic discharge.

V_ESD= ±400V MIN. ( C = 100pF, R = 1.5KΩ )

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 1 of 6

μPA2660T1R

Electrical Characteristics (T_A= 25°C)

Characteristics

Symbol

I_DSS

MIN.

TYP. MAX.

Unit

Test Conditions

Zero Gate Voltage Drain Current

Gate Leakage Current

1.0

±10

1.5

μA

V_DS= 20 V, V_GS= 0 V

V_GS= ±10 V, V_DS= 0 V

V_DS= 10 V, I_D= 1 mA

V_DS= 10 V, I_D= 2.0 A

V_GS= 4.5 V, I_D= 2.0 A

V_GS= 2.5 V, I_D= 2.0 A

I_GSS

Gate Cut-off Voltage

Forward Transfer Admittance ^∗

V_GS(off)

| y_fs|

R_DS(on)1

R_DS(on)2

C_iss

0.5

5.0

Drain to Source On-state

mΩ

Resistance ^∗

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

330

V_DS= 10 V, V_GS= 0 V,

f = 1.0 MHz

C_oss

C_rss

t_{d (on)}

t_r

t_{d (off)}

t_f

I_D= 2.0 A, V_DD= 10 V,

V_GS= 4.5 V, R_G= 6 Ω

6.4

Turn-off Delay Time

Fall Time

6.6

4.5

1.0

1.5

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q_G

I_D= 4.0 A , V_DD= 16 V,

V_GS= 10 V

Q_GS

Q_GD

V_F(S–D)

Body Diode Forward Voltage ^∗

1.5

I_F= 4.0 A, V_GS= 0 V

Note: ∗1. Pulsed

TEST CIRCUIT 1 SWITCHING TIME

TEST CIRCUIT 2 GATE CHARGE

D.U.T.

= 2 mA

90%

Wave Form

VGS

10%

PG.

50 Ω

PG.

90%

10% 10%

Wave Form

d(on)

d(off)

τ = 1μs

Duty Cycle ≤ 1%

toff

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 2 of 6

μPA2660T1R

Typical Characteristics (T_A= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

140

120

100

2.5

Mounted on a glass expoxy board

of 25.4mm x 25.4mm 0.8mmt

PW=5sec

1.5

2units

1unit

0.5

100 125 150 175

T_A-Ambient Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

100

I_D(pulse)=16A

I_D(DC)=4A

Power Dissipation Limited

0.1

0.01

T_A=25ºC 2units

Single Pulse

Mounted on glass epoxy board of

25.4 mm x 25.4 mm x 0.8 mmt

0.01

0.1

100

_DS- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

Single pulse

R_th(ch-a)=83.3ºC/W(1units 5s)

R_th(ch-a)=54.3ºC/W(2units 5s)

0.1

0.01

R_th(ch-A): Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt

100 μ

1 m

10 m

100 m

100

1000

PW - Pulse Width - s

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 3 of 6

μPA2660T1R

DRAIN CURRENT vs.

FORWARD TRANSFER CHARACTERISTICS

DRAIN TO SOURCE VOLTAGE

V_GS=4.5V

0.1

T_A=150°C

75°C

25°C

-55°C

2.5V

0.01

0.001

0.0001

V_DS= 10V

Pulsed

0.5

1.5

0.5

1.5

V_DS- Drain to Source Voltage - V

V_GS- Gate to Source Voltage - V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

1.2

100

T_A= 150°C

75°C

1.0

0.8

0.6

0.4

0.2

0.0

25°C

-55°C

0.1

0.01

V_DS= 10V

Pulsed

V_DS= 10V

_D= 1mA

0.001

0.01

0.1

100

-50

100

150

I_D– Drain Current - A

T_ch- Channel Temperature - °C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

100

Pulsed

I_D= 2.0A

Pulsed

V_GS= 2.5V

4.5V

0.1

100

I_D- Drain Current - A

V_GS- Gate to Source Voltage - V

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 4 of 6

μPA2660T1R

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

CAPACITANCE vs. DRAIN TO SOURCE

VOLTAGE

1,000

100

Pulsed

I_D= 2.0A

C_iss

V_GS= 2.5V

100

C_oss

C_rss

4.5V

V_GS= 0V

f = 1.0MHz

0.1

100

-50

100

150

V_DS– Drain to Source Voltage - V

T_ch- Channel Temperature - °C

SWITCHING CHARACTERISTICS

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

100

V_GS

V_DD= 20V

16V

t_d(off)

10V

V_DS

t_d(on)

t_f

t_r

V_DD= 10V

V_GS= 4.5V

_G= 6Ω

I_D=4.0A

0.1

100

Q_G- Gate Charge - nC

I_D- Drain Current - A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

100

Pulsed

V_GS=4.5V

2.5V

0.5

1.5

V_F(S–D)- Drain to Source Voltage - V

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 5 of 6

μPA2660T1R

Package Drawings (Unit: mm)

6pinHUSON2020

RENESAS Package code：PWSN0006JD-A

2±0.1

1.7±0.05

▼

0.3

0.3±0.05

0.05

S A B

▼

1：Source1

2：Gate1

6：Drain1

4：Source2

5：Gate2

3：Drain2

0.05 S

0.65±0.03

Equivalent Circuit

(1/2 circuit)

Drain

Body

Diode

Gate

Protection

Diode

Source

Remark The diode connected between the gate and source of the transistor serves as a protector against

ESD. When this device actually used, an additional protection circuit is externally required if a

voltage exceeding the rated voltage may be applied to this device.

R07DS0999EJ0100 Rev.1.00

Jan 16, 2013

Page 6 of 6

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Colophon 2.2

UPA2660T1R-E2-AX [RENESAS]

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