UPA2670T1R [RENESAS]
DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m; 双P沟道MOSFET -20 V， -3.0 A， 79米
| 型号： | UPA2670T1R |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | DUAL P-CHANNEL MOSFET -20 V, -3.0 A, 79 m |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
μPA2670T1R
DUAL P-CHANNEL MOSFET
R07DS0833EJ0101
Rev.1.01
Apr 15, 2013
–20 V, –3.0 A, 79 mΩ
Description
The μPA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
Features
•
•
–1.8V drive available
Low on-state resistance
⎯ RDS (on)1 = 79 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
⎯ RDS (on)2 = 105 mΩ MAX. (VGS = –2.5 V, ID = –1.5 A)
⎯ RDS (on)3 = 182 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)
Built-in gate protection diode
•
•
Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
μPA2670T1R-E2-AX∗
Package
6pinHUSON2020
1
Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
Ratings
–20
Unit
V
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
m10
V
m3.0
A
1
Drain Current (pulse) ∗
m12
A
2
Total Power Dissipation (1 unit, 5 s) ∗
Total Power Dissipation (2 units, 5 s) ∗
1.5
W
W
°C
°C
2
PT2
2.3
Channel Temperature
Tch
150
Storage Temperature
TSTG
–55 to +150
Notes: ∗1. PW≤10 μs, Duty Cycle≤1%
∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
R07DS0883EJ0101 Rev.1.01
Apr 15, 2013
Page 1 of 6
μPA2670T1R
Electrical Characteristics (TA = 25°C)
Characteristics
Symbol
IDSS
MIN.
TYP. MAX.
Unit
Test Conditions
Zero Gate Voltage Drain Current
Gate Leakage Current
–1.0
m10
μA
μA
V
VDS = –20 V, VGS = 0 V
VGS = m8 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –5 V, ID = –2 A
IGSS
Gate Cut-off Voltage
Forward Transfer Admittance ∗
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
–0.4
4.5
–1.1
1
S
Drain to Source On-state
63
78
79
mΩ
mΩ
mΩ
pF
pF
pF
ns
VGS = –4.5 V, ID = –1.5 A
VGS = –2.5 V, ID = –1.5 A
VGS = –1.8 V, ID = –1.5 A
1
Resistance ∗
105
182
109
473
88
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
Coss
Crss
68
td (on)
tr
td (off)
tf
11.5
4.0
37.5
12.5
5.1
0.9
1.5
ID = –1.5 A, VDD = –10.0 V,
VGS = –4.0 V, RG = 6 Ω
ns
Turn-off Delay Time
Fall Time
ns
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
nC
nC
nC
V
ID = –3.0 A , VDD = –16 V,
VGS = –4.5 V
QGS
QGD
1
Body Diode Forward Voltage ∗
VF(S–D)
1.5
IF = 3.0 A, VGS = 0 V
Note: ∗1. Pulsed
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
D.U.T.
I
G
= −2 mA
RL
V
V
GS(−)
R
L
90%
V
GS
V
GS
10%
Wave Form
0
RG
PG.
V
DD
50 Ω
PG.
V
DD
DS(−)
90%
90%
V
DS
V
0
GS(−)
V
DS
10% 10%
0
Wave Form
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
τ = 1
μ
s
Duty Cycle ≤ 1%
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 2 of 6
μPA2670T1R
Typical Characteristics (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
140
120
100
80
2.5
2
Mounted on a glass expoxy board
of 25.4mm x 25.4mm 0.8mmt
PW=5sec
1.5
1
2 units
60
1 units
40
0.5
0
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TA -Ambient Temperature - °C
TA -Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
ID(DC)=-3A
ID(pulse)=-12A
-10
-1
Power Dissipation Limited
-0.1
-0.01
TA=25ºC
Single Pulse 2 units
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Single pulse
1unit, Rth(ch-a)=83.3ºC/W(5s)
2unit, Rth(ch-a)=54.3ºC/W(5s)
1
0.1
Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
0.01
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 3 of 6
μPA2670T1R
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
-14
-12
-10
-8
-100
Pulsed
TA = 150°C
75°C
-10
-1
VGS = –4.5 V
25°C
–55°C
–2.5 V
–1.8 V
-0.1
-6
-0.01
-0.001
-0.0001
-4
Pulsed
VDS = –10 V
-2
-0
-0
-0.5
-1
-1.5
-0
-0.5
-1
-1.5
-2
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1
1000
100
10
-0.8
-0.6
-0.4
-0.2
-0
TA = 125°C
75°C
25°C
–25°C
1
Pulsed
VDS = –10 V
ID = –1 mA
0.1
0.01
Pulsed
VDS = –5 V
-50
0
50
100
150
-0.01
-0.1
-1
-10
-100
Tch - Channel Temperature - °C
ID – Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
200
Pulsed
ID = –1.5 A
Pulsed
150
150
100
50
VGS = –1.8 V
–2.5 V
100
–4.5 V
50
0
0
-0.1
-1
-10
-100
-0
-2
-4
-6
-8
ID - Drain Current - A
VGS - Gate to Source Voltage - V
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 4 of 6
μPA2670T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
CHANNEL TEMPERATURE
160
1000
Pulsed
VGS = –1.8 V
140
ID = –1.5 A
120
Ciss
100
80
Coss
100
60
Crss
–4.5 V
–1.5 A
–2.5 V
40
–1.5 A
VGS = 0 V
20
f = 1.0 MHz
0
10
-0.1
-50
0
50
100
150
-1
-10
-100
Tch - Channel Temperature - °C
VDS – Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-5
-25
-20
-15
-10
-5
100
10
1
VGS
VDD = –16 V
–10 V
–4 V
μ
-4
td(off)
VDS
tf
-3
-2
td(on)
tr
VDD = –10 V
VGS = –4.0 V
RG = 6 Ω
-1
ID = –3.0 A
-0
-0
0
1
2
3
4
5
6
0.1
1
10
100
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
Pulsed
10
1
0.1
0.01
VGS = 0 V
0
0.5
1
1.5
VF(S–D) - Drain to Source Voltage - V
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 5 of 6
μPA2670T1R
Package Drawings (Unit: mm)
6pinHUSON2020
RENESAS Package code：PWSN0006JD-A
2±0.1
B
1.7±0.05
A
▼
4
5
6
0.3
3
6
2
3
1
0.3±0.05
0.05
S A B
M
▼
1：Source1
2：Gate1
6：Drain1
4：Source2
5：Gate2
3：Drain2
S
0.05 S
0.65±0.03
Equivalent Circuit
(1/2 circuit)
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against
ESD. When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
R07DS0833EJ0101 Rev.1.01
Apr 15, 2013
Page 6 of 6
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
Colophon 2.2
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