UPA2720AGR-E2-AT [RENESAS]
14A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8;
| 型号： | UPA2720AGR-E2-AT |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 14A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μPA2720AGR
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2720AGR is N-channel MOS Field Effect Transistor
designed for power management applications of a notebook
computer and Lithium-Ion battery protection circuit.
8
5
1, 2, ꢀ : Source
4
: Gate
5, 6, 7, 8: Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 7 A)
RDS(on)2 = 14 mΩ MAX. (VGS = 5.0 V, ID = 7 A)
• Low input capacitance
6.0 0.ꢀ
4.4
1
4
5.ꢀ7 MAX.
0.8
Ciss = 3600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
• RoHS Compliant
0.5 0.2
0.10
1.27 0.78 MAX.
+0.10
0.40
0.12 M
–0.05
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn
PACKING
PACKAGE
μ PA2720AGR-E1-AT Note
μ PA2720AGR-E2-AT Note
Power SOP8
0.08 g TYP.
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
20
V
V
Drain
14
A
Drain Current (pulse) Note1
Body
Diode
150
A
Gate
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
Channel Temperature
1.1
W
W
°C
°C
A
PT2
2.5
Gate
Protection
Diode
Tch
150
Source
Storage Temperature
Tstg
−55 to +150
14
Single Avalanche Current Note3
Single Avalanche Energy Note3
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
IAS
EAS
19.6
mJ
2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18704EJ2V0DS00 (2nd edition)
Date Published October 2008 NS
2007, 2008
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μPA2720AGR
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
VDS = 30 V, VGS = 0 V
1
μA
μA
V
VGS = 20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A
VGS = 5.0 V, ID = 7 A
VDS = 10 V,
10
3.0
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
1.5
7
S
5.5
7.0
3600
490
250
22
6.6
14
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 7 A,
VGS = 10 V,
22
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
73
17
Total Gate Charge
QG
VDD = 15 V,
28
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
QGD
VF(S-D)
trr
VGS = 5 V,
10
ID = 14 A
11
IF = 14 A, VGS = 0 V
IF = 14 A, VGS = 0 V,
di/dt = 100 A/μs
0.8
31
ns
nC
Qrr
25
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
R
G
= 25 Ω
50 Ω
R
L
90%
V
GS
Wave Form
VGS
10%
90%
0
R
G
PG.
VDD
PG.
GS = 20 → 0 V
V
DD
V
VDS
90%
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
IAS
VDS
ID
τ
td(on)
tr
td(off)
tf
VDD
t
on
toff
τ = 1
μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
IG
RL
50 Ω
PG.
VDD
2
Data Sheet G18704EJ2V0DS
μPA2720AGR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
<R>
1000
100
10
120
100
80
60
40
20
0
I
D(pulse)
I
D(DC)
1
0.1
Single Pulse
Mounted on glass epoxy boad of
25.4 mm x 25.4 mm x 0.8 mmt
0.01
0
20 40 60 80 100 120 140 160
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
<R>
1000
100
10
Rth(ch-A) = 114°C/Wi
Single Pulse
1
0.1
Single Pulse
Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
0.01
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
100
10
1
V
GS = 10 V
T
ch = −55°C
25°C
75°C
150°C
5.0 V
0.1
V
DS = 10 V
Pulsed
0.4 0.5
Pulsed
0.01
0
1
2
3
4
5
0
0.1
0.2
0.3
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
3
Data Sheet G18704EJ2V0DS
μPA2720AGR
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3
2
1
0
100
10
1
T
ch = −55°C
25°C
75°C
150°C
V
DS = 10 V
= 1 mA
V
DS = 10 V
I
D
Pulsed
0.1
-50
0
50
100
150
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
20
I
D
= 7 A
Pulsed
15
10
5
15
10
5
V
GS = 5.0 V
10 V
Pulsed
100 1000
0
0
0.1
1
10
ID - Drain Current - A
0
5
10
15
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
15
10000
1000
100
Ciss
10
5
V
GS = 5.0 V
C
oss
rss
C
10 V
I
D
= 7 A
V
GS = 0 V
Pulsed
f = 1 MHz
10
0
0.1
1
10
100
-50
0
50
100
150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
4
Data Sheet G18704EJ2V0DS
μPA2720AGR
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
6
5
4
3
2
1
0
1000
100
10
V
DD = 24 V
15 V
V
GS = 10 V
6 V
0 V
20
10
0
V
GS
V
DS
1
I = 14 A
D
Pulsed
1.5
0.1
0
10
20
30
0
0.5
1
QG - Gate Charge - nC
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet G18704EJ2V0DS
μPA2720AGR
•
The information in this document is current as of October, 2008. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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