UPA2739T1A-E2-AY [RENESAS]

P-channel MOSFET -30 V, -85 A, 2.8 m; P沟道MOSFET -30 V， -85 A， 2.8米


型号：	UPA2739T1A-E2-AY
厂家：	RENESAS TECHNOLOGY CORP
描述：	P-channel MOSFET -30 V, -85 A, 2.8 m P沟道MOSFET -30 V， -85 A， 2.8米
文件：	总7页 (文件大小：149K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

μPA2739T1A

P-channel MOSFET

–30 V, –85 A, 2.8 mΩ

R07DS0885EJ0102

Rev.1.02

Nov 28, 2012

Description

The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.

Features

•

V_DSS= −30 V (T_A= 25°C)

Low on-state resistance

⎯ R_DS(on)= 2.8 mΩ MAX. (V_GS= −10 V, I_D= −46 A)

⎯ R_DS(on)= 5.7 mΩ MAX. (V_GS= −4.5 V, I_D= −23 A)

4.5 V Gate-drive available

Thin type surface mount package with heat spreader

Halogen free

•

8-pin HVSON(6051)

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

Pure Sn

Tape 3000 p/reel

8-pin HVSON(6051)

μ PA2739T1A-E2-AY^∗

0.1 g TYP.

Note: ^∗1. Pb-free (This product does not contain Pb in external electrode.)

Absolute Maximum Ratings (T_A= 25°C)

Item

Symbol

Ratings

−30

Unit

Drain to Source Voltage (V_GS= 0 V)

Gate to Source Voltage (V_DS= 0 V)

Drain Current (DC) (T_C= 25°C)

V_DSS

V_GSS

I_D(DC)

m20

m85

Drain Current (pulse) ^∗

I_D(pulse)

P_T1

P_T2

P_T3

T_ch

m180

1.5

Total Power Dissipation ^∗

°C

Total Power Dissipation (PW = 10 sec) ^∗

Total Power Dissipation (T_C= 25°C)

Channel Temperature

4.6

150

Storage Temperature

Single Avalanche Current ^∗

Single Avalanche Energy ^∗

T_stg

I_AS

−55 to +150

-40

E_AS

160

Thermal Resistance

Channel to Ambient Thermal Resistance ^∗2

R_th(ch-A)

R_th(ch-C)

83.3

1.5

°C/W

Notes: ^∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

^∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

^∗3. Starting T_ch= 25°C, V_DD= −15 V, R_G= 25 Ω, V_GS= −20 → 0 V, L = 100 μH

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 1 of 6

μPA2739T1A

Electrical Characteristics (T_A= 25°C)

Item

Symbol

MIN.

TYP.

MAX.

−1

Unit

μA

Test Conditions

V_DS= −30 V, V_GS= 0 V

V_GS= m20 V, V_DS= 0 V

V_DS= −10 V, I_D= −1 mA

V_DS= −10 V, I_D= −23 A

V_GS= −10 V, I_D= −46 A

V_GS= −4.5 V, I_D= −23 A

V_DS= −10 V,

Zero Gate Voltage Drain Current I_DSS

Gate Leakage Current

I_GSS

V_GS(off)

| y_fs|

R_DS(on)1

R_DS(on)2

C_iss

m100

−2.5

Gate Cut-off Voltage

Forward Transfer Admittance ^∗

−1.0

Drain to Source On-state

2.2

3.8

2.8

5.7

mΩ

Resistance ^∗

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

6050

3000

2420

C_oss

C_rss

t_d(on)

t_r

V_GS= 0 V,

f = 1 MHz

V_DD= −15 V, I_D= −23 A,

V_GS= −10 V,

140

310

490

153

Turn-off Delay Time

Fall Time

t_d(off)

t_f

R_G= 10 Ω

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Body Diode Forward Voltage ^∗

Reverse Recovery Time

Reverse Recovery Charge

Note: ^∗1. Pulsed

Q_G

V_DD= −15 V,

Q_GS

Q_GD

V_F(S-D)

t_rr

V_GS= −10 V,

I_D= −23 A

0.85

450

1200

1.2

I_F= 46 A, V_GS= 0 V

I_F= 50 A, V_GS= 0 V,

di/dt = 100 A/μs

Q_rr

TEST CIRCUIT 2 SWITCHING TIME

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

= 25 Ω

50 Ω

GS(−)

90%

10%

PG.

Wave Form

GS = −20 → 0 V

PG.

VDS(−)

90%

−

BV^DSS

GS(−)

10% 10%

Wave Form

d(on)

d(off)

off

τ = 1

Starting Tch

Duty Cycle ≤ 1%

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

= −2 mA

PG.

VDD

50 Ω

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 2 of 6

μPA2739T1A

TYPICAL CHARACTERISTICS (T_A= 25°C)

FORWARD BIAS SAFE OPERATING AREA

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

-1000

-100

-10

140

120

100

ID(pulse)=-180A

Power Dissipation Limited

-1

-0.1

-0.01

Tc=25ºC

Single Pulse

75 100 125 150 175

-0.01

-0.1

-1

-10

-100

T_C- Case Temperature - °C

V_DS- Drain to Source Voltage – V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

1000

100

Single pulse

Rth(ch-a)=83.3ºC/W

Rth(ch-c)=1.5ºC/W

0.1

Rth(ch-A) : Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt

0.01

100 μ

1 m

10 m

100 m

100

1000

PW - Pulse Width - s

DRAIN CURRENT(DC) vs. CASE TEMPERATURE

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

-100

-200

VGS=-10V

-80

-60

-40

-20

-0

-150

-100

-50

-0

VGS=-4.5V

Pulsed

100 125 150 175

-0

-0.5

-1

-1.5

T_C- Case Temperature - °C

V_DS- Drain to Source Voltage - V

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 3 of 6

μPA2739T1A

FORWARD TRANSFER CHARACTERISTICS

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

-100

-10

-3

-2

-1

-0

TA=150°C

75°C

25°C

-55°C

-1

-0.1

-0.01

-0.001

VDS = -10V

ID=-1mA

VDS = -10V

Pulsed

-0

-1

-2

-3

-4

-50

100

150

V_GS- Gate to Source Voltage - V

T_ch- Channel Temperature -

FORWARD TRANSFER ADMITTANCE vs. DRAIN

CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

10.0

8.0

6.0

4.0

2.0

0.0

100

Pulsed

TA=150°C

75°C

25°C

-55°C

VGS=-4.5V

0.1

VGS=-10V

0.01

VDS = -10V

Pulsed

0.001

-1

-10

-100

-1000

-0.001 -0.01

-0.1

-1

-10

-100

I_D- Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

ID=-46A

Pulsed

VGS=-4.5V

ID=-23A

VGS=-10V

ID=-46A

-0

-5

-10

-15

-20

-50

100

150

V_GS- Gate to Source Voltage - V

T_ch- Channel Temperature -

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 4 of 6

μPA2739T1A

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

10000

1000

100

10,000

1,000

100

VDD = -15V

VGS=-10V

Ciss

RG=10Ω

Coss

Crss

td(of f )

td(on)

VGS = 0V

f = 1.0MHz

-0.1

-1

-10

-100

-0.1

-1

-10

-100

ID - Drain Current - A

V_DS- Drain to Source Voltage - V

DYNAMIC INPUT CHARACTERISTICS

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

1000

-14

-12

-10

-8

Pulsed

VGS=-10V

VDD= -6V

-15V

100

-24V

-4.5V

-6

-4

-2

ID=-23A

100

150

200

0.2

0.4

0.6

0.8

Q_G- Gate Charge - nC

V_F(S-D)- Source to Drain Voltage - V

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 5 of 6

μPA2739T1A

Package Drawings (Unit: mm)

8-pin HVSON (6051)

0.2

0.10 S

5.4 0.2

0.2

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

3.65 0.2

0.6 0.15

0.7 0.15

RENESAS Package code : PVSN0008DA-A

Equivalent Circuit

Drain

Body

Diode

Gate

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0885EJ0102 Rev.1.02

Nov 28, 2012

Page 6 of 6

Notice

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Colophon 2.2

UPA2739T1A-E2-AY [RENESAS]

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