UPA572CT-T1-A/AT [RENESAS]
SMALL SIGNAL, FET;
| 型号： | UPA572CT-T1-A/AT |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | SMALL SIGNAL, FET |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet
µPA572CT
N-CHANNEL MOSFET FOR SWITCHING
R07DS1281EJ0200
Rev.2.00
Jul 10, 2015
Description
The UPA572CT, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be
driven directly by a 4.5 V power source.
Features
Two MOSFET circuits (Two source common)
Directly driven by a 4.5 V power source.
Low on-state resistance
RDS(on)1 = 2.7 MAX. (VGS = 10 V, ID = 100 mA)
RDS(on)2 = 3.2 MAX. (VGS = 4.5 V, ID = 50 mA)
Ordering Information
Part Number
Lead Plating
Packing
Package
UPA572CT-T1-A/AT
-A : Sn-Bi , -AT : Pure Sn
3000p/Reel
SC-88A (5pSSP)
Remark "-A/AT" indicates Pb-free. This product does not contain Pb in external electrode and other parts.
Marking UG
Absolute Maximum Ratings (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
60
20
V
V
100
mA
mA
mW
C
Drain Current (pulse) Note
200
Total Power Dissipation
300 (Total)
150
Channel Temperature
Tch
Storage Temperature
Tstg
55 to 150
C
Note PW 10 s, Duty Cycle 1%
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 1 of 6
µPA572CT
Electrical Characteristics (TA = 25C)
Characteristics
Symbol
Test Conditions
VDS = 60 V, VGS = 0 V
MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
1
A
A
V
VGS = 20 V, VDS = 0 V
VDS = VGS, ID = 250 A
VDS = 10 V, ID = 100 mA
VGS = 10 V, ID = 100 mA
VGS = 4.5 V, ID = 50 mA
VDS = 10 V,
10
2.5
Gate to Source Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.0
Note
Forward Transfer Admittance
150
mS
Note
Drain to Source On-state Resistance
2.1
2.4
20
9
2.7
3.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
nC
V
Coss
Crss
VGS = 0 V,
f = 1.0 MHz
2
td(on)
tr
VDD = 10 V,
16
6.5
82
32
2
ID = 200 mA,
Turn-off Delay Time
Fall Time
td(off)
tf
VGS = 10 V,
RG = 10
Total Gate Charge
QG
ID = 200 mA, VDD = 25 V, VGS = 10 V
IF = 200 mA, VGS = 0 V
Note
Body Diode Forward Voltage
VF(S-D)
0.86
Note Pulsed
Test Circuit Switching Time
D.U.T.
V
GS
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
RG
0
PG.
V
DD
V
DS
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
f
t
d(off)
τ = 1 s
μ
Duty Cycle ≤ 1%
t
on
t
off
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 2 of 6
µPA572CT
Typical Characteristics (TA = 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
350
300
120
100
80
60
40
20
0
Free air
250
200
Total
150
100
50
Per one unit
0
50
TA – Ambient Temperature - C
0
25
75
100
125
150
0
25
50
75 100 125 150 175
TA – Ambient Temperature - C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1
200
V
DS= 5 V
180
160
140
120
100
80
V
GS = 10 V
Pulsed
0.1
4.5 V
TA = 125°C
0.01
0.001
75°C
25°C
60
–25°C
40
20
Pulsed
0
0.0001
0
1
2
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage – V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
3
T
A
= 125°C
75°C
25°C
V
DS = VGS
= 250 A
I
D
2.5
–25°C
0.1
2
1.5
1
VDS= 5 V
Pulsed
0.01
0.01
0.1
ID - Drain Current - A
1
-50
0
50
100
150
Tch - Channel Temperature - C
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 3 of 6
µPA572CT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
10
Pulsed
Pulsed
I = 100 mA
D
5
0
5
0
V
GS = 4.5 V
10 V
50 mA
2
0.001
0.01
0.1
1
0
4
6
8
10
12
ID - Drain Current - A
VGS – Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
5
4
3
2
1
0
100
10
1
Pulsed
V
GS = 4.5 V, I
D
= 50 mA
C
iss
Coss
10 V, 100 mA
Crss
V
GS = 0 V
f = 1.0 MHz
0.1
0.1
1
10
100
-25
0
25
50
75
100
125
Tch - Channel Temperature - C
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
1000
100
10
10
8
V
R
DD = 10 V, VGS = 10 V
t
f
G
= 10 Ω
V
DD = 48 V
30 V
25 V
t
d(off)
6
4
t
d(on)
2
tr
I
D
= 200 mA
1
0
0.001
0.01
0.1
1
0
1
2
3
ID - Drain Current - A
QG – Gate Chage - nC
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 4 of 6
µPA572CT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
1
0.1
1
Pulsed
V
GS = 0 V
ID(pulse)= –200mA
1ms
ID(DC)= –100mA
0.1
0.01
0.001
100ms
DC Power
Dissipation Limited
TA=25°C
Single Pulse
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1
10
100
VF(S-D) – Source to Drain Voltage - V
VDS - Drain to Source Voltage – V
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 5 of 6
µPA572CT
Package Drawings (Unit: mm)
SC-88A (5pSSP)
Equivalent Circuit
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
R07DS1281EJ0200 Rev.2.00
Jul 10, 2015
Page 6 of 6
µPA572CT
Description
Summary
Rev.
1.00
2.00
Date
Page
Sep , 2013
Jun, 2015
First Edition Issued
2
- Changed Electrical Characteristics
- Changed Test Circuit Switching Time
Changed all graphs
3, 4, 5
5
Added FORWARD BIAS SAFE OPERATING AREA
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Colophon 5.0
相关型号：
UPA573T-A
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