UPA800T-KB [RENESAS]

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6;
UPA800T-KB
型号: UPA800T-KB
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6

放大器 光电二极管 晶体管
文件: 总8页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
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You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
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6.  
7.  
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics  
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Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and  
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consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise  
expressly specified in a Renesas Electronics data sheets or data books, etc.  
“Standard”:  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual  
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; safety equipment; and medical equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or  
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare  
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,  
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use of Renesas Electronics products beyond such specified ranges.  
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
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manufactured by you.  
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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
PRELIMINARY DATA SHEET  
SILICON TRANSISTOR  
µPA800T  
HIGH-FREQUENCY LOW NOISE AMPLIFIER  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD  
The µPA800T has built-in 2 low-voltage transistors which are designed  
PACKAGE DRAWINGS  
to am plify low noise in the VHF band to the UHF band.  
(Unit: m m )  
2.1±0.1  
FEATURES  
1.25±0.1  
Low Noise  
NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 m A  
High Gain  
|S21e|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 m A  
A Mini Mold Package Adopted  
Built-in 2 Transistors (2 × 2SC4228)  
ORDERING INFORMATION  
PART NUMBER  
QUANTITY  
PACKING STYLE  
µPA800T  
Loose products  
(50 PCS)  
Em bossed tape 8 m m wide. Pin 6 (Q1  
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)  
face to perforation side of the tape.  
PIN CONFIGURATION (Top View )  
µPA800T-T1  
Taping products  
(3 KPCS/Reel)  
6
5
2
4
Q
1
Rem ark If you require an evaluation sam ple, please contact an NEC  
Q
3
2
Sales Representative. (Unit sam ple quantity is 50 pcs.)  
1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)  
PIN CONNECTIONS  
1. Collector (Q1)  
2. Emitter (Q1)  
4. Emitter (Q2)  
5. Base (Q2)  
6. Base (Q1)  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
20  
UNIT  
V
3. Collector (Q2)  
Collector to Base Voltage  
Collector to Em itter Voltage  
Em itter to Base Voltage  
Collector Current  
10  
V
1.5  
V
35  
m A  
m W  
Total Power Dissipation  
PT  
150 in 1 elem ent  
200 in 2 elem ents  
Note  
J unction Tem perature  
Storage Tem perature  
Tj  
150  
˚C  
˚C  
Tstg  
–65 to +150  
Note 110 m W m ust not be exceeded in 1 elem ent.  
The inform ation in this docum ent is subject to change w ithout notice.  
Document No. ID-3634  
(O.D. No. ID-9141)  
Date Published April 1995 P  
Printed in Japan  
1995  
©
µPA800T  
ELECTRICAL CHARACTERISTICS (TA = 25 °C)  
PARAMETER  
SYMBOL  
CONDITION  
VCB = 10 V, IE = 0  
MIN.  
TYP.  
MAX.  
UNIT  
µA  
Collector Cutoff Current  
Em itter Cutoff Current  
DC Current Gain  
ICBO  
IEBO  
hFE  
fT  
1.0  
1.0  
VEB = 1 V, IC = 0  
µA  
Note 1  
VCE = 3 V, IC = 5 m A  
VCE = 3 V, IC = 5 m A  
80  
200  
Gain Bandwidth Product  
Feed-back Capacitance  
Insertion Power Gain (1)  
Insertion Power Gain (2)  
Noise Figure (1)  
5.5  
80  
GHz  
pF  
Note 2  
Cre  
VCB = 3 V, IE = 0, f = 1 MHz  
0.7  
2
|S21e|  
VCE = 1 V, IC = 3 m A, f = 2 GHz  
VCE = 3 V, IC = 5 m A, f = 2 GHz  
VCE = 1 V, IC = 3 m A, f = 2 GHz  
VCE = 3 V, IC = 5 m A, f = 2 GHz  
4.5  
5.5  
6.5  
7.5  
1.9  
1.9  
dB  
dB  
dB  
dB  
2
|S21e|  
NF  
NF  
3.2  
3.2  
Noise Figure (2)  
Notes 1. Pulse Measurem ent: Pw 350 µs, Duty cycle 2 %  
2. Measured with 3-pin bridge, em itter and case should be connected to guard pin of bridge.  
hFE CLASSIFICATION  
Rank  
KB  
RL  
Marking  
hFE Value  
80 to 200  
TYPICAL CHARACTERISTICS (TA = 25 °C)  
PT - TA Characteristics  
IC - VCE Characteristics  
25  
20  
15  
10  
5
Free Air  
µ
200  
µ
µ
µ
µ
µ
100  
40 µA  
IB = 20 µA  
0
50  
100  
150  
0
5
1.0  
Ambient Temperature TA (°C)  
Collector to Emitter Voltage VCE (V)  
IC - VBE Characteristics  
hFE - IC Characteristics  
20  
200  
100  
50  
VCE = 3 V  
VCE = 3 V  
10  
20  
10  
0.5  
1
5
10  
50  
0
0.5  
1.0  
Collector Current IC (mA)  
Base to Emitter Voltage VBE (V)  
2
µPA800T  
C
re - VCB Characteristics  
fT - IC Characteristics  
5.0  
10  
8
V
CE = 3 V  
f = 1 MHz  
f = 2 GHz  
2.0  
1.0  
0.5  
6
4
2
0
0.2  
0.1  
1
2
5
10  
20  
50  
50  
50  
0.5  
1
5
10  
(mA)  
50  
Collector to Base Voltage VCB (V)  
Collector Current I  
C
l S21e l 2 - I  
C
Characteristics  
| S21e | - f Characteristics  
2
12  
8
25  
20  
15  
10  
V
CE = 3 V  
V
CE = 3 V  
f = 2 GHz  
IC = 5 mA  
4
0
5
0
0.5  
1
5
10  
0.1  
0.5  
1.0  
2.0  
5.0  
Collector Current I (mA)  
C
Frequency f (GHz)  
NF - IC Characteristics  
5
V
CE = 3 V  
f = 2 GHz  
4
3
2
1
0
0.5  
1
5
10  
(mA)  
Collector Current I  
C
3
µPA800T  
S-PARAMETERS  
VCE = 3 V, IC = 5 m A, ZO = 50 Ω  
FREQUENCY  
MHz  
S 11  
S 21  
S 21  
S 21  
S 12  
S 12  
S 12  
S 22  
S 22  
S 22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
.875  
.762  
.677  
.565  
.495  
.425  
.372  
.327  
.289  
.255  
.236  
.214  
.195  
.182  
.165  
.153  
.145  
.139  
.134  
.129  
–18.6  
–35.0  
–47.2  
–59.4  
–67.5  
–76.1  
–81.6  
–88.5  
–93.6  
–100.5  
–105.2  
–112.2  
–117.6  
–123.8  
–129.9  
–137.4  
–144.3  
–151.8  
–157.0  
–164.7  
14.087  
12.290  
10.888  
9.275  
8.300  
7.184  
6.454  
5.818  
5.231  
4.820  
4.444  
4.142  
3.842  
3.554  
3.343  
3.218  
3.091  
2.857  
2.764  
2.624  
161.1  
145.1  
133.6  
123.6  
115.7  
108.9  
104.8  
99.5  
95.5  
92.0  
88.8  
85.3  
83.2  
79.3  
77.4  
75.3  
73.6  
70.4  
68.7  
66.4  
.018  
.034  
.048  
.055  
.063  
.074  
.084  
.089  
.092  
.104  
.105  
.113  
.122  
.127  
.139  
.140  
.152  
.162  
.168  
.176  
78.2  
68.6  
66.6  
65.8  
63.5  
61.1  
63.8  
62.7  
64.6  
62.8  
64.2  
64.2  
63.6  
65.0  
64.1  
64.5  
65.4  
64.3  
62.3  
64.8  
.958  
.888  
.800  
.719  
.669  
.610  
.600  
.560  
.543  
.519  
.512  
.497  
.476  
.481  
.467  
.466  
.458  
.456  
.451  
.445  
–10.1  
–17.7  
–24.4  
–26.7  
–28.7  
–30.3  
–30.6  
–31.3  
–30.1  
–33.4  
–31.8  
–33.4  
–33.2  
–34.2  
–34.6  
–34.8  
–37.2  
–36.1  
–38.4  
–39.0  
VCE = 3 V, IC = 3 m A, ZO = 50 Ω  
FREQUENCY  
MHz  
S 11  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
.943  
.868  
.815  
.717  
.655  
.577  
.518  
.468  
.420  
.380  
.344  
.321  
.291  
.273  
.250  
.228  
.219  
.199  
.193  
.182  
–13.4  
–26.6  
–37.7  
–48.9  
–56.8  
–65.5  
–71.2  
–78.1  
–83.7  
9.384  
8.668  
8.165  
7.279  
6.780  
6.061  
5.504  
5.074  
4.632  
4.340  
3.951  
3.717  
3.485  
3.306  
3.134  
2.959  
2.819  
2.699  
2.572  
2.474  
165.9  
152.8  
142.9  
132.9  
125.5  
118.0  
112.8  
106.7  
102.8  
98.3  
94.8  
90.5  
87.6  
84.3  
80.7  
79.0  
76.0  
73.9  
.020  
.038  
.051  
.062  
.075  
.084  
.091  
.098  
.102  
.105  
.112  
.121  
.128  
.135  
.140  
.145  
.153  
.161  
.163  
.175  
84.1  
77.2  
67.9  
63.9  
63.9  
60.0  
59.7  
57.0  
59.0  
56.6  
57.8  
59.0  
58.7  
59.8  
58.0  
59.5  
59.0  
58.4  
60.3  
59.8  
.969  
.936  
.876  
.804  
.764  
.708  
.685  
.639  
.611  
.592  
.579  
.551  
.532  
.535  
.511  
.516  
.504  
.493  
.489  
.482  
–7.7  
–13.8  
–20.9  
–23.5  
–26.7  
–29.7  
–31.1  
–32.0  
–32.8  
–35.0  
–34.1  
–35.0  
–35.9  
–36.6  
–37.5  
–37.7  
–39.0  
–39.9  
–41.4  
–41.4  
–90.6  
–94.8  
–101.6  
–105.9  
–111.7  
–117.2  
–122.4  
–128.5  
–135.3  
–139.6  
–146.9  
71.9  
68.3  
VCE = 3 V, IC = 1 m A, ZO = 50 Ω  
FREQUENCY  
MHz  
S 11  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
100.00  
200.00  
300.00  
400.00  
500.00  
600.00  
700.00  
800.00  
900.00  
1000.00  
1100.00  
1200.00  
1300.00  
1400.00  
1500.00  
1600.00  
1700.00  
1800.00  
1900.00  
2000.00  
1.023  
.983  
.975  
.922  
.899  
.849  
.812  
.774  
.727  
.680  
.651  
.616  
.575  
.546  
.512  
.481  
.463  
.440  
.419  
.394  
–7.6  
–16.1  
–22.4  
–31.8  
–36.9  
–44.7  
–50.6  
–57.1  
–62.9  
–69.3  
–74.1  
–79.8  
–85.2  
–90.6  
–95.8  
–100.6  
–106.3  
–111.8  
–116.4  
–121.2  
3.505  
3.400  
3.368  
3.219  
3.186  
3.046  
2.905  
2.830  
2.694  
2.597  
2.479  
2.392  
2.302  
2.207  
2.110  
2.034  
1.989  
1.903  
1.854  
1.779  
172.1  
163.3  
157.3  
149.1  
143.3  
135.7  
131.1  
124.4  
119.2  
114.1  
109.3  
104.8  
101.1  
96.0  
92.1  
88.8  
85.5  
82.2  
78.9  
75.5  
.025  
.039  
.061  
.075  
.093  
.105  
.113  
.128  
.134  
.146  
.146  
.155  
.155  
.160  
.168  
.165  
.176  
.173  
.174  
.173  
86.4  
79.3  
74.6  
70.7  
66.4  
62.2  
61.7  
55.7  
55.6  
53.7  
50.3  
49.8  
46.2  
46.7  
43.6  
45.5  
45.3  
43.8  
43.5  
43.7  
.995  
.986  
.976  
.936  
.922  
.885  
.880  
.846  
.808  
.790  
.766  
.741  
.714  
.708  
.685  
.676  
.667  
.649  
.633  
.630  
–4.6  
–7.8  
–12.8  
–15.1  
–18.8  
–22.5  
–24.4  
–27.2  
–28.8  
–31.8  
–32.8  
–34.9  
–35.9  
–36.8  
–38.4  
–40.1  
–41.8  
–42.3  
–44.2  
–45.2  
4
µPA800T  
[MEMO]  
5
µPA800T  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
“Standard“, “Special, and “Specific“. The Specific quality grade applies only to devices developed based on  
a customer designated “quality assurance program“ for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices in Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact NEC Sales Representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 94.11  

相关型号:

UPA800T-KB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6

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NEC

UPA800T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

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NEC

UPA800T-T1

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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RENESAS

UPA800T-T1-A

NPN SILICON HIGH FREQUENCY TRANSISTOR

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CEL

UPA800T-T1KB

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6

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NEC

UPA800T-T1KB-A

RF Small Signal Bipolar Transistor, 0.035A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-6

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NEC

UPA800T-T1KB-A

2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-6

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RENESAS

UPA800TF

NPN SILICON HIGH FREQUENCY TRANSISTOR

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NEC

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NEC

UPA800T_09

NPN SILICON HIGH FREQUENCY TRANSISTOR

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CEL

UPA800T_V1

NPN SILICON HIGH FREQUENCY TRANSISTOR

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CEL

UPA801

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

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NEC