UPD166035GR-E1-AY [RENESAS]
INTELLIGENT POWER DEVICE;型号: | UPD166035GR-E1-AY |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | INTELLIGENT POWER DEVICE |
文件: | 总17页 (文件大小:534K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
mPD166035GR
INTELLIGENT POWER DEVICE
Description
R07DS1117EJ0200
Rev.2.00
Jul 31, 2014
The mPD166035 is an N-channel high side driver with built-in charge pump and embedded protection function.
When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent
destruction and degradation of the product, and also outputs self-diagnostic signal.
Features
·
·
·
High temperature operation (Tch = 175°C MAX.)
Built-in charge pump circuit
Low on-state resistance
RDS(ON) = 80 mW MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)
·
Built-in protection circuit
Current limitation
Overtemperature protection
Active clamp operation at inductive load switch off
Built-in diagnostic function
Package: Power SOP 8
·
·
·
Application
·
Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Ordering Information
Part No.
Lead Plating
Packing
Tape 2500 p/reel
Tape 2500 p/reel
Package
Power SOP 8
Power SOP 8
mPD166035GR-E1-AY
mPD166035GR-E2-AY
Sn
Sn
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 1 of 15
mPD166035GR
Block Diagram
Pin Configuration
·
Power SOP 8
Pin Functions
Pin No.
Pin Name
Function
1
2
3
4
5
6
7
8
IN
Input pin
DIAG
GND
OUT
VCC
VCC
VCC
VCC
DIAG output pin
Ground pin
High side output pin
Power supply pin
Power supply pin
Power supply pin
Power supply pin
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 2 of 15
mPD166035GR
Absolute Maximum Ratings
(Ta = 25°C, unless otherwise specified)
Item
Symbol
Rating
Unit
V
Condition
Power supply voltage
VCC1
VCC2
VIN1
VIN2
IIN
–0.3 to +28
35
V
t = 300 ms
IN input voltage
–0.5 to +5.5
V
5
±10
V
VCC = 0 V, t = 0.5 s
IN input current
mA
A
Output current
IOA
2
Output negative voltage
Power dissipation
Operation temperature
Storage temperature
DIAG output voltage
DIAG output current
Clamp susceptibility
VOA
PD
VCC–30
2.70
V
Without dynamic clamp
Ta = 25°C Note
W
°C
°C
V
Topt
Tstg
VDIAG
IDIAG
ECLP
–40 to +125
–55 to +175
7.0
10
mA
mJ
100
Note: When mounted on a epoxy PCB (where FR-4 is 10 cm ´ 10 cm, dimension of copper foil is 15% and thickness of
copper foil is 35 mm), PW = 10 s
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 3 of 15
mPD166035GR
Electrical Characteristics
(VCC = 8 to 16 V, Tch = –40 to +175°C, unless otherwise specified)
Item
Input voltage
Symbol
VIH
MIN.
2.8
0
TYP.
—
MAX.
5.5
1.5
350
—
Unit
V
Condition
VCC = 4.5 to 16 V
VIL
—
V
Input current
IIH
—
—
mA
mA
mA
mA
mA
mA
mA
V
VIN = 5.5 V
VIN = 0 V
IIL
–10
—
—
Note 1
Standby current
Output leakage current
ICCH
ICCL
IOH1
IOH2
IOL
—
4.0
900
2
VIN = VIH
VIN = VIL
Note 1
—
—
—
—
VIN = VIL, VO = Vcc
—
—
0.4
—
VIN = VIL, VO = 4V
–0.24
—
—
VIN = VIL, VO = 0V
DIAG output low level
voltage
VDIAG
—
0.5
VCC = 4.5 to 16V, IDIAG = 0.6mA
DIAG output leakage
current
IDIAG
VOIH
VOIL
—
4
—
—
—
10
—
mA
V
VDIAG = 7V
Open load detection
voltage
Load connection
detection voltage
—
1.45
V
Drain to source on-state RDS(ON)
resistance
—
—
—
—
—
—
80
130
10
mW
mW
A
VIN = VIH, IO = 1.5A
Tch = 25°C
Tch = 150°C
Overcurrent detection
IS
2
Note 2
Overtemperature
detection
Tth
(175)
—
°C
Turn on delay time
Turn off delay time
Rise time
tD(ON)
tD(OFF)
tON
—
—
—
—
—
4
200
200
100
100
300
ms
ms
ms
ms
ms
RL = 9.3W, VCC = 14V, VIN = 5.5V–0V
30
24
5
Fall time
tOFF
DIAG Output Delay
Time
tDpd
—
RL =9.3Ω, RDIAG=5.1kΩ, VCC =14V
Io=-60mA
Negative Output
Voltage
–VO
VCC-30
—
—
—
—
VCC-40
14
V
ms
%
Output Oscillation Cycle tS
at over current condition
Overcurrent condition
Overcurrent condition
Output On Duty at over
current condition
DS
—
30
Notes: 1. OUT, DIAG current is not included.
2. Not subject to production test, specified by design.
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 4 of 15
mPD166035GR
Definition of Switching Time
50%
50%
Input voltage
tD(OFF)
tD(ON)
90%
90%
Output voltage
10%
10%
tON
tOFF
tDpd
DIAG output
voltage
50%
Truth Table
Item
VIN
H
L
VOUT
VDIAG
Normal operation
H
L
L
L
H
L
L
L
L
Overtemperature detection
Overcurrent detection
H
L
H
Chopping
L
H
L
L
H
H
L
H
H
Open load detection
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 5 of 15
mPD166035GR
Outline of Functions
Pre-Driver (Charge Pump Circuit) ON/OFF Control
When the input voltage of the input pin (IN) is high level (2.8 V or more), the output MOS (Nch) turns on.
When the output voltage of the input pin (IN) is low level (1.5 V or less), the output MOS (Nch) turns off.
Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side.
Overcurrent Detection Circuit
This circuit detects overcurrent to output pin (OUT) caused by short circuit etc., and feeds back detection signal to
control circuit.
When the overcurrent is detected, the current limitation circuit and the control circuit start operation. The output current
is restricted and chopping operation begins.
Current Limitation Circuit
This circuit limits the output current by using the detection signal from the overcurrent detection circuit, preventing
destruction and degradation of the product.
Overtemperature Detection Circuit
This circuit detects overtemperature by output MOS (Nch) driving, and feeds back detection signal to control circuit.
When the circuit detects overtemperature, the protection function of the control circuit operates and output is shutdown.
Output MOS (Nch) automatically restarts when channel temperature cools down after shutdown.
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 6 of 15
mPD166035GR
Open Load Detection Circuit
This circuit detects Open Load of output terminal. However, In case of using Open Load detection function, it is
necessary to connect pull-up resistor (5.1Kohm±10%) with output terminal. (There are no electric characteristics
influences in other circuit by presence of pull-up resistor.)
Open Load is detected by inputting low-level (1.5V or less) to input terminal (IN). DAIG terminal outputs Hi-Z (pull-
up: high-level) when the output terminal is open.
5V
VIN
"L"
"L"
"H"
ON
GND
VCC
VOUT
OFF
OFF
OFF
OFF
ON
5V(Pull-up)
GND
VDIAG
ON
OFF
ON
Open load condition
Diagnostic Output Circuit
This circuit controls output of diagnostic signal form DIAG terminal when over current or over temperature or Open
Load is detected.
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 7 of 15
mPD166035GR
Timing Chart
Example of Application Circuit
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Jul 31, 2014
Page 8 of 15
mPD166035GR
Typical Characteristics
IOH1
IOH2
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mPD166035GR
R07DS1117EJ0200 Rev.2.00
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mPD166035GR
R07DS1117EJ0200 Rev.2.00
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mPD166035GR
R07DS1117EJ0200 Rev.2.00
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mPD166035GR
Transient Thermal Resistance Characteristics
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 13 of 15
mPD166035GR
Package Drawing
Taping Information
There are two types (-E1, -E2) of taping depending on the direction of the device.
Marking Information
This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position
aren't indicated.
6035
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 14 of 15
mPD166035GR
Recommended Soldering Conditions
The mPD166035 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales
representative.
For technical information, see the following website.
Semiconductor Package Mount Manual (http://www.renesas.com/products/package/manual/index.jsp)
·
·
mPD166035GR-E1-AY Note: Power SOP 8
mPD166035GR-E2-AY Note: Power SOP 8
Process
Conditions
Symbol
Infrared reflow
Maximum temperature (package’s surface temperature): 260°C or below,
Time at maximum temperature: 10 seconds or less,
IR60-00-3
Time at temperature higher than 220°C: 60 seconds or less,
Preheating time at 160°C to 180°C: 60 to 120 seconds, Times: Three times,
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Partial Heating
Method
Pin temperature: 300°C or below,
Heat time: 3 seconds or less (Per each side of the device),
Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
—
Note: Pb-free (This product does not contain Pb in the external electrode.)
R07DS1117EJ0200 Rev.2.00
Jul 31, 2014
Page 15 of 15
Revision History
mPD166035GR Data Sheet
Description
Summary
Rev.
Date
Page
—
1.00
2.00
Sep 20, 2013
Jul 31, 2014
First Edition Issued
Absolute Maximum Ratings: IN input voltage(VIN1
3
)
Change "–0.5V to +5.6V" to "–0.5V to +5.5V".
Negative Output Voltage: Change "mA" to "V".
4
5
Definition of Switching Time (tDpd): Change "90%" to "50%".
Output Leakage Current: Change "A" to "mA".
9
10
15
Output Leakage Current: Change "A" to "mA".
Semiconductor Package Mount Manual: Change URL.
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