UPD44324185BF5-E50Y-FQ1 [RENESAS]
2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165;
| 型号： | UPD44324185BF5-E50Y-FQ1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, PLASTIC, BGA-165 时钟 双倍数据速率 静态存储器 内存集成电路 |
| 文件： | 总35页 (文件大小：418K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
μPD44324185B
μPD44324365B
R10DS0037EJ0200
Rev.2.00
September 12, 2011
36M-BIT DDR II SRAM SEPARATE I/O
2-WORD BURST OPERATION
Description
The μPD44324185B is a 2,097,152-word by 18-bit and the μPD44324365B is a 1,048,576-word by 36-bit
synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-
transistor memory cell.
The μPD44324185B and μPD44324365B integrate unique synchronous peripheral circuitry and a burst
counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K
and K#. These products are suitable for application which require synchronous operation, high speed, low
voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA.
Features
• 1.8 0.1 V power supply
• 165-pin PLASTIC BGA (15 x 17)
• HSTL interface
• PLL circuitry for wide output data valid window and future frequency scaling
• Separate independent read and write data ports
• DDR read or write operation initiated each cycle
• Pipelined double data rate operation
• Separate data input/output bus
• Two-tick burst for low DDR transaction size
• Two input clocks (K and K#) for precise DDR timing at clock rising edges only
• Two output clocks (C and C#) for precise flight time and clock skew matching-clock
and data delivered together to receiving device
• Internally self-timed write control
• Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed.
• User programmable impedance output (35 to 70 Ω)
• Fast clock cycle time : 3.3 ns (300 MHz), 3.5 ns (287 MHz), 4.0 ns (250 MHz), 5.0 ns (200 MHz)
• Simple control logic for easy depth expansion
• JTAG 1149.1 compatible test access port
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 1 of 34
μPD44324185B, μPD44324365B
Ordering Information
Organization
Operating Ambient
Temperature
Cycle
time
Clock
frequency
Part No.
Package
(word x bit)
μPD44324185BF5-E33-FQ1-A
μPD44324185BF5-E35-FQ1-A
μPD44324185BF5-E40-FQ1-A
μPD44324185BF5-E50-FQ1-A
μPD44324365BF5-E33-FQ1-A
μPD44324365BF5-E35-FQ1-A
μPD44324365BF5-E40-FQ1-A
μPD44324365BF5-E50-FQ1-A
μPD44324185BF5-E33-FQ1
μPD44324185BF5-E35-FQ1
μPD44324185BF5-E40-FQ1
μPD44324185BF5-E50-FQ1
μPD44324365BF5-E33-FQ1
μPD44324365BF5-E35-FQ1
μPD44324365BF5-E40-FQ1
μPD44324365BF5-E50-FQ1
μPD44324185BF5-E33Y-FQ1-A
μPD44324185BF5-E35Y-FQ1-A
μPD44324185BF5-E40Y-FQ1-A
μPD44324185BF5-E50Y-FQ1-A
μPD44324365BF5-E33Y-FQ1-A
μPD44324365BF5-E35Y-FQ1-A
μPD44324365BF5-E40Y-FQ1-A
μPD44324365BF5-E50Y-FQ1-A
μPD44324185BF5-E33Y-FQ1
μPD44324185BF5-E35Y-FQ1
μPD44324185BF5-E40Y-FQ1
μPD44324185BF5-E50Y-FQ1
μPD44324365BF5-E33Y-FQ1
μPD44324365BF5-E35Y-FQ1
μPD44324365BF5-E40Y-FQ1
μPD44324365BF5-E50Y-FQ1
2M x 18
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
3.3ns
3.5ns
4.0ns
5.0ns
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
300MHz
287MHz
250MHz
200MHz
Ta = 0 to 70°C
165-pin
PLASTIC BGA
(15 x 17)
Lead-free
1M x 36
2M x 18
1M x 36
2M x 18
1M x 36
2M x 18
1M x 36
Ta = 0 to 70°C
Ta = −40 to 85°C
Ta = −40 to 85°C
165-pin
PLASTIC BGA
(15 x 17)
Lead
165-pin
PLASTIC BGA
(15 x 17)
Lead-free
165-pin
PLASTIC BGA
(15 x 17)
Lead
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 2 of 34
μPD44324185B, μPD44324365B
Pin Arrangement
165-pin PLASTIC BGA (15 x 17)
(Top View)
[μPD44324185B]
2M x 18
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
CQ#
NC
A
R, W# BW1#
K#
K
LD#
A
A
NC
NC
NC
NC
NC
NC
VDDQ
NC
NC
NC
NC
NC
NC
A
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
VSS/144M
Q9
NC/288M
BW0#
A
VSS/72M
NC
D9
A
NC
A
NC
NC
D10
Q10
Q11
D12
Q13
VDDQ
D14
Q14
D15
D16
Q16
Q17
A
VSS
A
VSS
Q7
NC
D11
NC
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
NC
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
D6
NC
Q12
D13
VREF
NC
NC
G
H
J
NC
NC
DLL#
NC
VREF
Q4
K
L
NC
NC
D3
NC
Q15
NC
NC
M
N
P
R
NC
Q1
NC
D17
NC
VSS
VSS
NC
NC
A
A
C
A
A
D0
TDO
TCK
A
A
C#
A
A
TMS
A
: Address inputs
: Data inputs
TMS
: IEEE 1149.1 Test input
: IEEE 1149.1 Test input
: IEEE 1149.1 Clock input
: IEEE 1149.1 Test output
: HSTL input reference input
: Power Supply
D0 to D17
Q0 to Q17
LD#
TDI
: Data outputs
TCK
TDO
VREF
VDD
: Synchronous load
: Read Write input
R, W#
BW0#, BW1#
K, K#
: Byte Write data select
: Input clock
V
DDQ
: Power Supply
C, C#
: Output clock
VSS
NC
: Ground
CQ, CQ#
ZQ
: Echo clock
: No connection
: Output impedance matching
: PLL disable
NC/xxM : Expansion address for xxMb
DLL#
Remarks 1. ×××# indicates active LOW.
2. Refer to Package Dimensions for the index mark.
3. 2A, 7A and 10A are expansion addresses : 10A for 72Mb
: 10A and 2A for 144Mb
: 10A, 2A and 7A for 288Mb
2A and 10A of this product can also be used as NC.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 3 of 34
μPD44324185B, μPD44324365B
Pin Arrangement
165-pin PLASTIC BGA (15 x 17)
(Top View)
[μPD44324365B]
1M x 36
1
2
3
4
5
6
7
BW1#
BW0#
A
8
9
10
11
CQ
Q8
D8
D7
Q6
Q5
D5
ZQ
D4
Q3
Q2
D2
D1
Q0
TDI
A
B
C
D
E
F
CQ#
Q27
D27
D28
Q29
Q30
D30
DLL#
D31
Q32
Q33
D33
D34
Q35
TDO
R, W# BW2#
K#
K
LD#
A
A
VSS/288M NC/72M
VSS/144M
Q17
Q7
Q18
Q28
D20
D29
Q21
D22
VREF
Q31
D32
Q24
Q34
D26
D35
TCK
D18
D19
Q19
Q20
D21
Q22
VDDQ
D23
Q23
D24
D25
Q25
Q26
A
A
BW3#
A
D17
D16
Q16
Q15
D14
Q13
VDDQ
D12
Q12
D11
D10
Q10
Q9
VSS
A
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
A
VSS
VSS
VDD
VDD
VDD
VDD
VDD
VSS
VSS
A
VSS
D15
D6
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
VSS
Q14
D13
VREF
Q4
G
H
J
K
L
D3
Q11
Q1
M
N
P
R
VSS
VSS
D9
A
A
C
A
A
D0
A
A
C#
A
A
A
TMS
A
: Address inputs
: Data inputs
DLL#
: PLL disable
D0 to D35
Q0 to Q35
LD#
TMS
TDI
: IEEE 1149.1 Test input
: IEEE 1149.1 Test input
: IEEE 1149.1 Clock input
: IEEE 1149.1 Test output
: HSTL input reference input
: Power Supply
: Data outputs
: Synchronous load
: Read Write input
TCK
TDO
VREF
VDD
R, W#
BW0# to BW3# : Byte Write data select
K, K#
C, C#
CQ, CQ#
ZQ
: Input clock
: Output clock
V
DDQ
: Power Supply
: Echo clock
VSS
NC
: Ground
: Output impedance matching
: No connection
Remarks 1. ×××# indicates active LOW.
2. Refer to Package Dimensions for the index mark.
3. 2A, 3A and 10A are expansion addresses: 3A for 72Mb
: 3A and 10A for 144Mb
: 3A, 10A and 2A for 288Mb
2A and 10A of this product can also be used as NC.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 4 of 34
μPD44324185B, μPD44324365B
Pin Description
(1/2)
Symbol
Type
Input
Description
A
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold
times around the rising edge of K. All transactions operate on a burst of two words (one
clock period of bus activity). These inputs are ignored when device is deselected, i.e., NOP
(LD# = HIGH).
D0 to Dxx
Q0 to Qxx
Input
Synchronous Data Inputs: Input data must meet setup and hold times around the rising
edges of K and K# during WRITE operations. See Pin Arrangement for ball site location of
individual signals.
x18 device uses D0 to D17.
x36 device uses D0 to D35.
Output
Synchronous Data Outputs: Output data is synchronized to the respective C and C# or to K
and K# rising edges if C and C# are tied HIGH. Data is output in synchronization with C and
C# (or K and K#), depending on the LD# and R, W# command. See Pin Arrangement for
ball site location of individual signals.
x18 device uses Q0 to Q17.
x36 device uses Q0 to Q35.
LD#
Input
Input
Input
Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined.
This definition includes address and read/write direction. All transactions operate on a burst
of 2 data (one clock period of bus activity).
R, W#
BWx#
Synchronous Read/Write Input: When LD# is LOW, this input designates the access type
(READ when R, W# is HIGH, WRITE when R, W# is LOW) for the loaded address. R, W#
must meet the setup and hold times around the rising edge of K.
Synchronous Byte Writes: When LOW these inputs cause their respective byte to be
registered and written during WRITE cycles. These signals must meet setup and hold times
around the rising edges of K and K# for each of the two rising edges comprising the WRITE
cycle. See Pin Arrangement for signal to data relationships.
x18 device uses BW0#, BW1#.
x36 device uses BW0# to BW3#.
See Byte Write Operation for relation between BWx# and Dxx.
K, K#
C, C#
Input
Input
Input Clock: This input clock pair registers address and control inputs on the rising edge of
K, and registers data on the rising edge of K and the rising edge of K#. K# is ideally 180
degrees out of phase with K. All synchronous inputs must meet setup and hold times around
the clock rising edges.
Output Clock: This clock pair provides a user controlled means of tuning device output data.
The rising edge of C# is used as the output timing reference for first output data. The rising
edge of C is used as the output reference for second output data. Ideally, #C is 180 degrees
out of phase with C. When use of K and K# as the reference instead of C and C#, then fixed
C and C# to HIGH. Operation cannot be guaranteed unless C and C# are fixed to HIGH
(i.e. toggle of C and C#)
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 5 of 34
μPD44324185B, μPD44324365B
(2/2)
Symbol
Type
Output
Description
CQ, CQ#
Synchronous Echo Clock Outputs. The rising edges of these outputs are tightly matched to
the synchronous data outputs and can be used as a data valid indication. These signals run
freely and do not stop when Q tristates. If C and C# are stopped (if K and K# are stopped in
the single clock mode), CQ and CQ# will also stop.
ZQ
Input
Input
Output Impedance Matching Input: This input is used to tune the device outputs to the
system data bus impedance. Q, CQ and CQ# output impedance are set to 0.2 x RQ, where
RQ is a resistor from this bump to ground. The output impedance can be minimized by
directly connect ZQ to VDDQ. This pin cannot be connected directly to GND or left
unconnected. The output impedance is adjusted every 20 μs upon power-up to account for
drifts in supply voltage and temperature. After replacement for a resistor, the new output
impedance is reset by implementing power-on sequence.
DLL#
PLL Disable: When debugging the system or board, the operation can be performed at a
clock frequency slower than TKHKH (MAX.) without the PLL circuit being used, if DLL# =
LOW. The AC/DC characteristics cannot be guaranteed. For normal operation, DLL# must
be HIGH and it can be connected to VDDQ through a 10 kΩ or less resistor.
TMS
TDI
Input
IEEE 1149.1 Test Inputs: 1.8 V I/O level. These balls may be left Not Connected if the
JTAG function is not used in the circuit.
TCK
Input
IEEE 1149.1 Clock Input: 1.8 V I/O level. This pin must be tied to VSS if the JTAG function
is not used in the circuit.
TDO
Output
IEEE 1149.1 Test Output: 1.8 V I/O level.
When providing any external voltage to TDO signal, it is recommended to pull up to VDD.
VREF
VDD
HSTL Input Reference Voltage: Nominally VDDQ/2. Provides a reference voltage for the
input buffers.
−
Supply
Supply
Power Supply: 1.8 V nominal. See Recommended DC Operating Conditions and DC
Characteristics for range.
VDDQ
Power Supply: Isolated Output Buffer Supply. Nominally 1.5 V. 1.8 V is also permissible.
See Recommended DC Operating Conditions and DC Characteristics for range.
VSS
NC
Supply
Power Supply: Ground
No Connect: These signals are not connected internally.
−
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 6 of 34
μPD44324185B, μPD44324365B
Block Diagram
[μPD44324185B]
20
ADDRESS
LD#
ADDRESS
20
R, W#
REGISTRY
& LOGIC
K
K#
R, W#
BW0#
BW1#
DATA
220 x 36
36
36
18
2
36
18
Q0 to Q17
REGISTRY
& LOGIC
D0 to D17
MEMORY
ARRAY
MUX
LD#
CQ,
CQ#
K
K
K
C, C#
K#
OR
K, K#
[μPD44324365B]
19
ADDRESS
LD#
ADDRESS
REGISTRY
& LOGIC
19
R, W#
K
K#
R, W#
BW0#
BW1#
BW2#
BW3#
219 x 72
DATA
72
72
36
2
72
Q0 to Q35
REGISTRY
& LOGIC
MEMORY
ARRAY
MUX
36
D0 to D35
CQ,
CQ#
LD#
K
K
K
C, C#
K#
OR
K, K#
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 7 of 34
μPD44324185B, μPD44324365B
Power-On Sequence in DDR II SRAM
DDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations.
The following timing charts show the recommended power-on sequence.
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and
V
DDQ can be applied simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during power-up.
The following power-down supply voltage removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD
and VDDQ can be removed simultaneously, as long as VDDQ does not exceed VDD by more than 0.5 V during
power-down.
Power-On Sequence
Apply power and tie DLL# to HIGH.
- Apply VDD before VDDQ.
- Apply VDDQ before VREF or at the same time as VREF
.
Provide stable clock for more than 20 μs to lock the PLL.
PLL Constraints
The PLL uses K clock as its synchronizing input and the input should have low phase jitter which is specified as
TKC var. The PLL can cover 120 MHz as the lowest frequency. If the input clock is unstable and the PLL is
enabled, then the PLL may lock onto an undesired clock frequency.
Power-On Waveforms
V
DD/VDDQ
V
DD/VDDQ Stable (< ±0.1 V DC per 50 ns)
Fix HIGH (or tied to VDDQ)
DLL#
Clock
20 μs or more
Stable Clock
Unstable Clock
Normal Operation
Start
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 8 of 34
μPD44324185B, μPD44324365B
Truth Table
Operation
WRITE cycle
LD# R, W# CLK
D or Q
Data in
L
L
L → H
Load address, input write data on
consecutive K and K# rising edge
READ cycle
Input data
Input clock
Data out
D(A+0)
D(A+1)
K(t+1) ↑
K#(t+1) ↑
L
H
L → H
Load address, read data on
consecutive C and C# rising edge
NOP (No operation)
Output data
Output clock
Q(A+0)
Q(A+1)
C#(t+1) ↑
C(t+2) ↑
H
×
×
L → H
D = ×, Q = High-Z
Previous state
Clock stop
×
Stopped
Remarks 1. H : HIGH, L : LOW, × : don’t care, ↑ : rising edge.
2. Data inputs are registered at K and K# rising edges. Data outputs are delivered at C and C# rising edges
except if C and C# are HIGH then Data outputs are delivered at K and K# rising edges.
3. All control inputs in the truth table must meet setup/hold times around the rising edge (LOW to HIGH) of
K. All control inputs are registered during the rising edge of K.
4. This device contains circuitry that ensure the outputs to be in high impedance during power-up.
5. Refer to state diagram and timing diagrams for clarification.
6. It is recommended that K = K# = C = C# when clock is stopped. This is not essential but permits most
rapid restart by overcoming transmission line charging symmetrically.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 9 of 34
μPD44324185B, μPD44324365B
Byte Write Operation
[μPD44324185B]
Operation
K
L → H
−
L → H
−
K#
−
L → H
−
L → H
−
L → H
−
BW0#
BW1#
Write D0 to D17
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
Write D0 to D8
Write D9 to D17
Write nothing
L → H
−
L → H
−
L → H
Remarks 1. H : HIGH, L : LOW, → : rising edge.
2. Assumes a WRITE cycle was initiated. BW0# and BW1# can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
[μPD44324365B]
Operation
K
L → H
−
L → H
−
L → H
−
L → H
−
L → H
−
L → H
−
K#
−
L → H
−
L → H
−
BW0#
BW1#
BW2#
BW3#
Write D0 to D35
Write D0 to D8
Write D9 to D17
Write D18 to D26
Write D27 to D35
Write nothing
0
0
0
0
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
1
1
1
1
0
0
1
1
1
1
0
0
1
1
1
1
0
0
1
1
1
1
1
1
0
0
1
1
L → H
−
L → H
−
L → H
−
L → H
Remarks 1. H : HIGH, L : LOW, → : rising edge.
2. Assumes a WRITE cycle was initiated. BW0# to BW3# can be altered for any portion of the BURST
WRITE operation provided that the setup and hold requirements are satisfied.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 10 of 34
μPD44324185B, μPD44324365B
Bus Cycle State Diagram
LOAD NEW
ADDRESS
Count = 0
Load, Count = 2
WRITE DOUBLE
Load, Count = 2
READ DOUBLE
Write
Read
Count = Count + 2
Count = Count + 2
Load
NOP,
NOP,
Count = 2
Count = 2
NOP
NOP
Supply voltage provided
Power UP
Remark State machine control timing sequence is controlled by K.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 11 of 34
μPD44324185B, μPD44324365B
Electrical Characteristics
Absolute Maximum Ratings
Parameter
Supply voltage
Symbol
Conditions
Rating
−0.5 to +2.5
Unit
V
VDD
Output supply voltage
Input voltage
VDD
Q
−0.5 to VDD
V
VIN
VI/O
TA
−0.5 to VDD+0.5 (2.5 V MAX.)
−0.5 to VDDQ+0.5 (2.5 V MAX.)
0 to 70
V
Input / Output voltage
Operating ambient temperature
V
(E** series)
°C
(E**Y series)
−40 to 85
Storage temperature
Tstg
−55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to 70°C, TA = −40 to 85°C)
Parameter
Supply voltage
Symbol Conditions
MIN.
1.7
TYP.
MAX.
1.9
Unit Note
VDD
1.8
V
Output supply voltage
Input HIGH voltage
Input LOW voltage
Clock input voltage
Reference voltage
VDD
Q
1.4
VDD
V
V
V
V
V
1
VIH (DC)
VIL (DC)
VIN
VREF +0.1
−0.3
VDDQ+0.3
VREF −0.1
VDDQ+0.3
0.95
1, 2
1, 2
1, 2
−0.3
VREF
0.68
Notes 1. During normal operation, VDDQ must not exceed VDD
.
2. Power-up: VIH ≤ VDDQ +0.3 V and VDD ≤ 1.7 V and VDDQ ≤ 1.4 V for t ≤ 200 ms
Recommended AC Operating Conditions (TA = 0 to 70°C, TA = −40 to 85°C)
Parameter
Input HIGH voltage
Input LOW voltage
Symbol Conditions
MIN.
MAX.
Unit Note
VIH (AC)
VIL (AC)
VREF +0.2
V
V
1
1
VREF −0.2
Note 1. Overshoot: VIH (AC) ≤ VDD +0.7 V (2.5 V MAX.) for t ≤ TKHKH/2
Undershoot: VIL (AC) ≥ −0.5 V for t ≤ TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 12 of 34
μPD44324185B, μPD44324365B
DC Characteristics 1 (TA = 0 to 70°C, VDD = 1.8 0.1 V)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit Note
x18
x36
Input leakage current
I/O leakage current
ILI
−2
−2
+2
+2
μA
μA
ILO
IDD
Operating supply current
(Read cycle / Write cycle)
VIN ≤ VIL or VIN ≥ VIH, -E33
530
520
480
420
400
390
380
350
600
580
540
470
420
420
390
360
mA
II/O = 0 mA,
-E35
-E40
-E50
Cycle = MAX.
Standby supply current
(NOP)
ISB1
VIN ≤ VIL or VIN ≥ VIH, -E33
mA
II/O = 0 mA,
Cycle = MAX.
Inputs static
-E35
-E40
-E50
Output HIGH voltage
Output LOW voltage
VOH(Low) |IOH| ≤ 0.1 mA
VOH Note1
VOL(Low) IOL ≤ 0.1 mA
VOL Note2
VDDQ−0.2
VDDQ/2−0.12
VSS
VDD
Q
V
V
V
V
3, 4
3, 4
3, 4
3, 4
VDDQ/2+0.12
0.2
VDDQ/2−0.12
VDDQ/2+0.12
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) 15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
2. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) 15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I standards.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 13 of 34
μPD44324185B, μPD44324365B
DC Characteristics 2 (TA = −40 to 85°C, VDD = 1.8 0.1 V)
Parameter
Symbol
Test condition
MIN.
MAX.
Unit Note
x18
x36
Input leakage current
I/O leakage current
ILI
−2
−2
+2
+2
μA
μA
ILO
IDD
Operating supply current
(Read cycle / Write cycle)
VIN ≤ VIL or VIN ≥ VIH, -E33Y
680
670
630
560
530
520
500
470
760
740
690
620
550
540
520
490
mA
II/O = 0 mA,
-E35Y
-E40Y
-E50Y
Cycle = MAX.
Standby supply current
(NOP)
ISB1
VIN ≤ VIL or VIN ≥ VIH, -E33Y
mA
II/O = 0 mA,
Cycle = MAX.
Inputs static
-E35Y
-E40Y
-E50Y
Output HIGH voltage
Output LOW voltage
VOH(Low) |IOH| ≤ 0.1 mA
VOH Note1
VOL(Low) IOL ≤ 0.1 mA
VOL Note2
VDDQ−0.2
VDDQ/2−0.12
VSS
VDD
Q
V
V
V
V
3, 4
3, 4
3, 4
3, 4
VDDQ/2+0.12
0.2
VDDQ/2−0.12
VDDQ/2+0.12
Notes 1. Outputs are impedance-controlled. | IOH | = (VDDQ/2)/(RQ/5) 15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
2. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) 15% for values of 175 Ω ≤ RQ ≤ 350 Ω.
3. AC load current is higher than the shown DC values.
4. HSTL outputs meet JEDEC HSTL Class I standards.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 14 of 34
μPD44324185B, μPD44324365B
Capacitance (TA = 25°C, f = 1 MHz)
Parameter
Symbol
Test conditions
MIN.
MAX.
Unit
Input capacitance
CIN
VIN = 0 V
5
pF
(Address, Control)
Input / Output capacitance
(DQ, CQ, CQ#)
CI/O
Cclk
VI/O = 0 V
Vclk = 0 V
7
6
pF
pF
Clock Input capacitance
Remark These parameters are periodically sampled and not 100% tested.
Thermal Characteristics
Parameter
Thermal resistance
Symbol
Substrate
4-layer
Airflow
TYP.
Unit
θ ja
0 m/s
1 m/s
0 m/s
1 m/s
0 m/s
1 m/s
0 m/s
1 m/s
21.2
13.4
20.2
13.0
0.02
0.06
0.02
0.05
2.58
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
from junction to ambient air
8-layer
4-layer
8-layer
Thermal characterization parameter
from junction to the top center
of the package surface
Ψ jt
θ jc
Thermal resistance
from junction to case
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 15 of 34
μPD44324185B, μPD44324365B
AC Characteristics (TA = 0 to 70°C or TA = −40 to 85°C, VDD = 1.8 0.1 V)
AC Test Conditions (VDD = 1.8 0.1 V, VDDQ = 1.4 V to VDD
)
Input waveform (Rise / Fall time ≤ 0.3 ns)
1.25 V
0.75 V
0.75 V
Test Points
0.25 V
Output waveform
V
DDQ / 2
Test Points
VDDQ / 2
Output load condition
Figure 1. External load at test
V
DDQ / 2
0.75 V
50 Ω
V
REF
ZO = 50 Ω
SRAM
250 Ω
ZQ
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 16 of 34
μPD44324185B, μPD44324365B
Read and Write Cycle
Parameter
Symbol
-E33,E33Y
(300 MHz)
-E35,E35Y
(287 MHz)
-E40,E40Y
(250 MHz)
-E50,E50Y
(200 MHz)
Unit Note
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Clock
Average Clock cycle time
(K, K#, C, C#)
TKHKH
3.3
8.4
0.2
3.5
8.4
0.2
4.0
8.4
0.2
5.0
8.4
0.2
ns
1
2
Clock phase jitter (K, K#, C, C#)
Clock HIGH time (K, K#, C, C#)
Clock LOW time (K, K#, C, C#)
Clock HIGH to Clock# HIGH
(K → K#, C → C#)
TKC var
TKHKL
ns
ns
ns
ns
1.32
1.32
1.49
1.5
1.5
1.7
1.6
1.6
1.8
2.0
2.0
2.2
TKLKH
TKHK#H
Clock# HIGH to Clock HIGH
(K# → K, C# → C)
Clock to data clock
TK#HKH
TKHCH
1.49
0
1.7
0
1.8
0
2.2
0
ns
ns
1.45
1.65
1.8
2.3
(K → C, K# → C#)
PLL lock time (K, C)
TKC lock
20
30
20
30
20
30
20
30
μs
ns
3
4
K static to PLL reset
TKC reset
Output Times
CQ HIGH to CQ# HIGH
(CQ → CQ#)
CQ# HIGH to CQ HIGH
TCQHCQ#H 1.24
TCQ#HCQH 1.24
TCHQV
1.35
1.35
1.55
1.55
1.95
1.95
ns
ns
5
5
(CQ# → CQ)
C, C# HIGH to output valid
C, C# HIGH to output hold
C, C# HIGH to echo clock valid
C, C# HIGH to echo clock hold
CQ, CQ# HIGH to output valid
CQ, CQ# HIGH to output hold
C HIGH to output High-Z
C HIGH to output Low-Z
0.45
0.45
0.27
0.45
0.45
0.45
0.3
0.45
0.45
0.3
0.45
0.45
0.35
0.45
ns
ns
ns
ns
ns
ns
ns
ns
TCHQX
−0.45
−0.45
−0.45
−0.3
−0.45
−0.45
−0.3
−0.45
−0.45
−0.35
−0.45
TCHCQV
TCHCQX −0.45
TCQHQV
6
6
TCQHQX −0.27
TCHQZ
0.45
0.45
TCHQX1 −0.45
−0.45
−0.45
Setup Times
Address valid to K rising edge
Synchronous load input (LD#),
read write input (R, W#) valid to
K rising edge
TAVKH
TIVKH
0.4
0.4
0.5
0.5
0.5
0.5
0.6
0.6
ns
ns
7
7
Data inputs and write data
select inputs (BWx#) valid to
K, K# rising edge
TDVKH
0.3
0.35
0.35
0.4
ns
7
Hold Times
K rising edge to address hold
K rising edge to
TKHAX
TKHIX
0.4
0.4
0.5
0.5
0.5
0.5
0.6
0.6
ns
ns
7
7
synchronous load input (LD#),
read write input (R, W#) hold
K, K# rising edge to data inputs
and write data select inputs
(BWx#) hold
TKHDX
0.3
0.35
0.35
0.4
ns
7
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 17 of 34
μPD44324185B, μPD44324365B
Notes 1. When debugging the system or board, these products can operate at a clock frequency slower than TKHKH
(MAX.) without the PLL circuit being used, if DLL# = LOW. Read latency (RL) is changed to 1.0 clock
cycle in this operation. The AC/DC characteristics cannot be guaranteed, however.
2. Clock phase jitter is the variance from clock rising edge to the next expected clock rising edge. TKC var
(MAX.) indicates a peak-to-peak value.
3.
VDD slew rate must be less than 0.1 V DC per 50 ns for PLL lock retention.
PLL lock time begins once VDD and input clock are stable.
It is recommended that the device is kept NOP (LD# = HIGH) during these cycles.
4. K input is monitored for this operation. See below for the timing.
K
TKC reset
or
K
TKC reset
5. Guaranteed by design.
6. Echo clock is very tightly controlled to data valid / data hold. By design, there is a 0.1 ns variation from
echo clock to data. The data sheet parameters reflect tester guardbands and test setup variations.
7. This is a synchronous device. All addresses, data and control lines must meet the specified setup and hold
times for all latching clock edges.
Remarks 1. This parameter is sampled.
2. Test conditions as specified with the output loading as shown in AC Test Conditions unless otherwise
noted.
3. Control input signals may not be operated with pulse widths less than TKHKL (MIN.).
4. If C, C# are tied HIGH, K, K# become the references for C, C# timing parameters.
5. VDDQ is 1.5 V DC.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 18 of 34
μPD44324185B, μPD44324365B
Read and Write Timing
NOP
WRITE
(burst of 2)
WRITE
(burst of 2)
READ
(burst of 2)
READ
(burst of 2)
READ
(burst of 2)
NOP
1
2
3
4
5
6
7
8
K
TKHKL TKLKH
TKHKH
TKHK#H
TK#HKH
K#
LD#
TKHIX
TIVKH
R, W#
A0
A2
A4
TDVKH TKHDX
A1
A3
Address
Data in
TDVKH TKHDX
TKHAX
TAVKH
D20
D21
D30
D31
Data out
Q00
Q01
Q10
Q11
Q40
Q41
Qx2
TCHQX1
TCHQZ
TCQHQV
TCQHQX
TCHQX
TCHQX
TCHQV TCHQV
CQ
TCHCQX
TCQHCQ#H TCQ#HCQH
TCHCQV
CQ#
TCHCQX
TCHCQV
TKHCH
C
TKHKL TKLKH
TKHKH
TKHK#H TK#HKH
TKHCH
C#
Remarks 1. Q01 refers to output from address A0+0.
Q02 refers to output from the next internal burst address following A0, i.e., A0+1.
2. Outputs are disabled (high impedance) 2.5 clock cycles after the last READ (LD# = LOW, R, W# =
HIGH) is input in the sequences of [READ]-[NOP] and [READ]-[WRITE].
3. In this example, if address A4 = A3, data Q41 = D31 and Q42 = D32.
Write data is forwarded immediately as read results.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 19 of 34
μPD44324185B, μPD44324365B
Application Example
R =
250 Ω
R =
250 Ω
ZQ
CQ#
CQ
ZQ
CQ#
CQ
. . .
SRAM#1
SRAM#4
DQ
A
DQ
A
LD# R, W# BWx# C/C# K/K#
LD# R, W# BWx# C/C# K/K#
V
t
SRAM
Controller
R
Data IO
Vt
Address
LD#
R
R, W#
BW#
SRAM#1 CQ/CQ#
Vt
R
R
SRAM#4 CQ/CQ#
Vt
Source CLK/CLK#
Return CLK/CLK#
Vt
R
R = 50 Ω
Vt = Vref
Remark AC Characteristics are defined at the condition of SRAM outputs, CQ, CQ# and DQ with termination.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 20 of 34
μPD44324185B, μPD44324365B
JTAG Specification
These products support a limited set of JTAG functions as in IEEE standard 1149.1.
Test Access Port (TAP) Pins
Pin name
TCK
Pin assignments
Description
2R
Test Clock Input. All input are captured on the rising edge of TCK and all
outputs propagate from the falling edge of TCK.
TMS
TDI
10R
11R
Test Mode Select. This is the command input for the TAP controller state
machine.
Test Data Input. This is the input side of the serial registers placed between
TDI and TDO. The register placed between TDI and TDO is determined by the
state of the TAP controller state machine and the instruction that is currently
loaded in the TAP instruction.
TDO
1R
Test Data Output. This is the output side of the serial registers placed between
TDI and TDO. Output changes in response to the falling edge of TCK.
Remark The device does not have TRST (TAP reset). The Test-Logic Reset state is entered while TMS is held HIGH
for five rising edges of TCK. The TAP controller state is also reset on the SRAM POWER-UP.
JTAG DC Characteristics (TA = 0 to 70°C, VDD = 1.8 0.1 V, unless otherwise noted)
Parameter
Symbol
Conditions
MIN.
−5.0
−5.0
MAX.
+5.0
+5.0
Unit
μA
JTAG Input leakage current
JTAG I/O leakage current
ILI
0 V ≤ VIN ≤ VDD
0 V ≤ VIN ≤ VDDQ,
Outputs disabled
ILO
μA
JTAG input HIGH voltage
JTAG input LOW voltage
JTAG output HIGH voltage
VIH
VIL
1.3
−0.3
1.6
VDD+0.3
+0.5
V
V
V
V
V
V
VOH1
VOH2
VOL1
VOL2
| IOHC | = 100 μA
| IOHT | = 2 mA
IOLC = 100 μA
IOLT = 2 mA
1.4
JTAG output LOW voltage
0.2
0.4
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 21 of 34
μPD44324185B, μPD44324365B
JTAG AC Test Conditions
Input waveform (Rise / Fall time ≤ 1 ns)
1.8 V
0.9 V
0 V
0.9 V
Test Points
Output waveform
0.9 V
Test Points
0.9 V
Output load
Figure 2. External load at test
V
TT = 0.9 V
50 Ω
ZO = 50 Ω
TDO
20 pF
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 22 of 34
μPD44324185B, μPD44324365B
JTAG AC Characteristics (TA = 0 to 70°C)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
tTHTH
fTF
tTHTL
tTLTH
50
ns
MHz
ns
20
20
20
ns
Output time
TCK LOW to TDO unknown
TCK LOW to TDO valid
tTLOX
tTLOV
0
ns
ns
10
Setup time
TMS setup time
TDI valid to TCK HIGH
Capture setup time
tMVTH
tDVTH
tCS
5
5
5
ns
ns
ns
Hold time
TMS hold time
tTHMX
tTHDX
tCH
5
5
5
ns
ns
ns
TCK HIGH to TDI invalid
Capture hold time
JTAG Timing Diagram
t
THTH
TCK
t
MVTH
t
THTL
t
TLTH
TMS
TDI
t
THMX
t
DVTH
t
THDX
t
TLOV
t
TLOX
TDO
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 23 of 34
μPD44324185B, μPD44324365B
Scan Register Definition (1)
Register name
Description
Instruction register
The instruction register holds the instructions that are executed by the TAP controller
when it is moved into the run-test/idle or the various data register state. The register can
be loaded when it is placed between the TDI and TDO pins. The instruction register is
automatically preloaded with the IDCODE instruction at power-up whenever the controller
is placed in test-logic-reset state.
Bypass register
ID register
The bypass register is a single bit register that can be placed between TDI and TDO. It
allows serial test data to be passed through the RAMs TAP to another device in the scan
chain with as little delay as possible.
The ID Register is a 32 bit register that is loaded with a device and vendor specific 32 bit
code when the controller is put in capture-DR state with the IDCODE command loaded in
the instruction register. The register is then placed between the TDI and TDO pins when
the controller is moved into shift-DR state.
Boundary register
The boundary register, under the control of the TAP controller, is loaded with the contents
of the RAMs I/O ring when the controller is in capture-DR state and then is placed
between the TDI and TDO pins when the controller is moved to shift-DR state. Several
TAP instructions can be used to activate the boundary register.
The Scan Exit Order tables describe which device bump connects to each boundary
register location. The first column defines the bit’s position in the boundary register. The
second column is the name of the input or I/O at the bump and the third column is the
bump number.
Scan Register Definition (2)
Register name
Instruction register
Bypass register
ID register
Bit size
Unit
bit
3
1
bit
32
109
bit
Boundary register
bit
ID Register Definition
ID [31:28] vendor
revision no.
ID [11:1] vendor
ID no.
Part number
Organization
ID [27:12] part no.
ID [0] fix bit
μPD44324185B
μPD44324365B
2M x 18
1M x 36
XXXX
XXXX
0000 0000 0100 0111
0000 0000 0100 1000
00000010000
00000010000
1
1
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 24 of 34
μPD44324185B, μPD44324365B
SCAN Exit Order
Bit
Signal name
Bump
ID
Bit
Signal name
Bump
ID
Bit
Signal name
Bump
ID
no.
x18
x36
no.
x18
x36
no.
x18
x36
1
C#
C
6R
6P
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
NC
NC
D15
Q15
10D
9E
73
74
NC
Q11
D11
NC
Q28
Q20
D20
D29
Q29
Q21
D21
D30
Q30
Q22
D22
2C
3E
2D
2E
1E
2F
2
3
A
6N
Q7
D7
10C
11D
9C
9D
11B
11C
9B
75
4
A
7P
76
5
A
7N
NC
NC
D16
Q16
77
NC
6
A
7R
78
Q12
D12
NC
7
A
8R
Q8
D8
79
3F
8
A
8P
80
1G
1F
9
A
9R
NC
NC
D17
Q17
81
NC
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Q0
D0
11P
10P
10N
9P
10B
11A
10A
9A
82
Q13
D13
3G
2G
1H
1J
CQ
VSS
A
83
NC
NC
D9
Q9
84
DLL#
85
NC
NC
D31
Q31
Q23
D23
D32
Q32
Q24
D24
D33
Q33
Q25
D25
D34
Q34
Q26
D26
D35
Q35
Q1
D1
10M
11N
9M
A
8B
86
2J
A
7C
6C
8A
87
Q14
D14
NC
3K
3J
NC
NC
D10
Q10
A
88
9N
LD#
89
2K
1K
2L
Q2
D2
11L
11M
9L
NC
BW1#
7A
90
NC
BW0# BW0#
7B
91
Q15
D15
NC
NC
NC
D11
Q11
K
6B
92
3L
10L
11K
10K
9J
K#
6A
93
1M
1L
Q3
D3
NC
BW3#
5B
94
NC
BW1# BW2#
5A
95
Q16
D16
NC
3N
3M
1N
2M
3P
2N
2P
1P
3R
4R
4P
5P
5N
5R
Internal
NC
NC
D12
Q12
R, W#
4A
96
9K
A
A
5C
4B
97
Q4
D4
ZQ
10J
11J
11H
10G
9G
98
NC
A
NC
3A
99
Q17
D17
NC
VSS
CQ#
2A
100
101
102
103
104
105
106
107
108
109
NC
NC
D13
Q13
1A
Q9
D9
Q18
D18
D27
Q27
Q19
D19
D28
2B
NC
Q5
D5
11F
11G
9F
3B
A
A
A
A
A
A
–
NC
NC
Q10
D10
NC
1C
1B
NC
NC
D14
Q14
10F
11E
10E
3D
3C
1D
Q6
D6
Remark Bump ID 10A of bit no. 48 and Bump ID 2A of bit no. 64 can also be used as NC.
The register always indicates LOW, however.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 25 of 34
μPD44324185B, μPD44324365B
JTAG Instructions
Instructions
Description
EXTEST
The EXTEST instruction allows circuitry external to the component package to be tested.
Boundary-scan register cells at output pins are used to apply test vectors, while those at
input pins capture test results. Typically, the first test vector to be applied using the
EXTEST instruction will be shifted into the boundary scan register using the PRELOAD
instruction. Thus, during the update-IR state of EXTEST, the output drive is turned on and
the PRELOAD data is driven onto the output pins.
IDCODE
BYPASS
The IDCODE instruction causes the ID ROM to be loaded into the ID register when the
controller is in capture-DR mode and places the ID register between the TDI and TDO pins
in shift-DR mode. The IDCODE instruction is the default instruction loaded in at power up
and any time the controller is placed in the test-logic-reset state.
When the BYPASS instruction is loaded in the instruction register, the bypass register is
placed between TDI and TDO. This occurs when the TAP controller is moved to the shift-
DR state. This allows the board level scan path to be shortened to facilitate testing of other
devices in the scan path.
SAMPLE / PRELOAD SAMPLE / PRELOAD is a Standard 1149.1 mandatory public instruction. When the
SAMPLE / PRELOAD instruction is loaded in the instruction register, moving the TAP
controller into the capture-DR state loads the data in the RAMs input and DQ pins into the
boundary scan register. Because the RAM clock(s) are independent from the TAP clock
(TCK) it is possible for the TAP to attempt to capture the I/O ring contents while the input
buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample
metastable input will not harm the device, repeatable results cannot be expected. RAM
input signals must be stabilized for long enough to meet the TAPs input data capture setup
plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other
TAP operation except capturing the I/O ring contents into the boundary scan register.
Moving the controller to shift-DR state then places the boundary scan register between the
TDI and TDO pins.
SAMPLE-Z
If the SAMPLE-Z instruction is loaded in the instruction register, all RAM DQ pins are
forced to an inactive drive state (high impedance) and the boundary register is connected
between TDI and TDO when the TAP controller is moved to the shift-DR state.
JTAG Instruction Coding
IR2
0
IR1
0
IR0
0
Instruction
EXTEST
Note
0
0
1
IDCODE
0
1
0
SAMPLE-Z
1
2
0
1
1
RESERVED
SAMPLE / PRELOAD
RESERVED
RESERVED
BYPASS
1
0
0
1
0
1
2
2
1
1
0
1
1
1
Notes 1. TRISTATE all DQ pins and CAPTURE the pad values into a SERIAL SCAN LATCH.
2. Do not use this instruction code because the vendor uses it to evaluate this product.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 26 of 34
μPD44324185B, μPD44324365B
Output Pin States of CQ, CQ# and Q
Instructions
Control-Register Status
Output Pin Status
CQ,CQ#
Update
Update
SRAM
SRAM
High-Z
High-Z
SRAM
SRAM
SRAM
SRAM
Q
EXTEST
0
1
0
1
0
1
0
1
0
1
High-Z
Update
SRAM
SRAM
High-Z
High-Z
SRAM
SRAM
SRAM
SRAM
IDCODE
SAMPLE-Z
SAMPLE
BYPASS
Remark The output pin statuses during each instruction vary according
to the Control-Register status (value of Boundary Scan
Register, bit no. 109).
Boundary Scan
Register
CAPTURE
Register
There are three statuses:
Update : Contents of the “Update Register” are output to the
output pin (DDR Pad).
SRAM
Output
Update
Register
SRAM : Contents of the SRAM internal output “SRAM
Output” are output to the output pin (DDR Pad).
High-Z :The output pin (DDR Pad) becomes high
impedance by controlling of the “High-Z JTAG
ctrl”.
Update
DDR
Pad
SRAM
SRAM
Output
Driver
High-Z
The Control-Register status is set during Update-DR at the
EXTEST or SAMPLE instruction.
High-Z
JTAG ctrl
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 27 of 34
μPD44324185B, μPD44324365B
Boundary Scan Register Status of Output Pins CQ, CQ# and Q
Instructions
SRAM Status
Boundary Scan Register Status
Note
CQ,CQ#
Q
Pad
Pad
−
EXTEST
READ (Low-Z)
NOP (High-Z)
READ (Low-Z)
NOP (High-Z)
READ (Low-Z)
NOP (High-Z)
READ (Low-Z)
NOP (High-Z)
READ (Low-Z)
NOP (High-Z)
Pad
Pad
−
IDCODE
SAMPLE-Z
SAMPLE
BYPASS
No definition
−
−
Pad
Pad
Internal
Internal
−
Pad
Pad
Internal
Pad
−
No definition
−
−
Remark The Boundary Scan Register statuses during execution each
instruction vary according to the instruction code and SRAM
operation mode.
Boundary Scan
Register
CAPTURE
Register
There are two statuses:
Internal
Pad
: Contents of the output pin (DDR Pad) are captured
in the “CAPTURE Register” in the Boundary Scan
Register.
SRAM
Output
Update
Register
Pad
Internal : Contents of the SRAM internal output “SRAM
Output” are captured in the “CAPTURE Register”
in the Boundary Scan Register.
DDR
Pad
SRAM
Output
Driver
High-Z
JTAG ctrl
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 28 of 34
μPD44324185B, μPD44324365B
TAP Controller State Diagram
1
Test-Logic-Reset
0
1
1
1
0
Run-Test / Idle
Select-DR-Scan
0
Select-IR-Scan
0
1
1
Capture-DR
0
Capture-IR
0
0
0
Shift-DR
1
Shift-IR
1
1
1
Exit1-DR
0
Exit1-IR
0
0
0
Pause-DR
1
Pause-IR
1
0
0
Exit2-DR
1
Exit2-IR
1
Update-DR
Update-IR
1
0
1
0
Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with
normal operation of the device, TCK must be tied to VSS to preclude mid level inputs. TDI and TMS may be left open
but fix them to VDD via a resistor of about 1 kΩ when the TAP controller is not used. TDO should be left unconnected
also when the TAP controller is not used.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 29 of 34
μPD44324185B, μPD44324365B
Run-Test/Idle
Update-IR
Exit1-IR
Shift-IR
Exit2-IR
Pause-IR
Exit1-IR
Shift-IR
Capture-IR
Select-IR-Scan
Select-DR-Scan
Run-Test/Idle
Test-Logic-Reset
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 30 of 34
μPD44324185B, μPD44324365B
Test-Logic-Reset
Select-IR-Scan
Select-DR-Scan
Run-Test/Idle
Update-DR
Exit1-DR
Shift-DR
Exit2-DR
Pause-DR
Exit1-DR
Shift-DR
Capture-DR
Select-DR-Scan
Run-Test/Idle
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 31 of 34
μPD44324185B, μPD44324365B
Package Dimensions
165-PIN PLASTIC BGA(15x17)
w
S
B
ZD
B
E
ZE
11
10
9
8
7
A
6
5
D
4
3
2
1
R P N M L K J H G F E D C B A
INDEX MARK
w
S A
A
(UNIT:mm)
ITEM DIMENSIONS
A2
y1
S
D
E
15.00 0.10
17.00 0.10
0.30
S
w
A
1.35 0.11
0.37 0.05
0.98
A1
A2
e
y
e
x
A1
A B
S
1.00
M
b
S
+0.10
b
0.50
0.05
x
0.10
y
0.15
y1
ZD
ZE
0.25
2.50
1.50
P165F5-100-FQ1-1
Renesas Electronics Corporation 2010
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 32 of 34
μPD44324185B, μPD44324365B
Recommended Soldering Condition
Please consult with our sales offices for soldering conditions of these products.
Types of Surface Mount Devices
μPD44324185BF5-FQ1 : 165-pin PLASTIC BGA (15 x 17)
μPD44324365BF5-FQ1 : 165-pin PLASTIC BGA (15 x 17)
Quality Grade
• A quality grade of the products is “Standard”.
• Anti-radioactive design is not implemented in the products.
• Semiconductor devices have the possibility of unexpected defects by affection of cosmic ray that reach to
the ground and so forth.
R10DS0037EJ0200 Rev.2.00
September 12, 2011
Page 33 of 34
Revision History
μPD44324185B , μPD44324365B
Description
Summary
Rev.
1st edition
Date
Page
-
’08.03.01
New Preliminary Data Sheet
DC Characteristics (Modification, Spec of IDD and ISB1
Thermal Characteristics (Modification, Spec)
2nd edition ’10.03.01
P14
P15
)
Rev.1.00
Rev.2.00
’10.09.10
’11.09.12
Throughout Preliminary Data Sheet → Data Sheet
Throughout Add Lead and the extended temperature operation product
All trademarks and registered trademarks are the property of their respective owners.
C - 34
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to
be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is
prohibited under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.
"Standard":
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;
personal electronic equipment; and industrial robots.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically
designed for life support.
"Specific":
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or system manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2011 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0
相关型号：
UPD44324185F5-E37-EQ2-A
2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
RENESAS
UPD44324185F5-E40-EQ2-A
2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
RENESAS
UPD44324185F5-E40Y-EQ2-A
2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
RENESAS
UPD44324185F5-E50-EQ2-A
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
NEC
UPD44324185F5-E50Y-EQ2-A
2MX18 DDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165
RENESAS
UPD44324362BF5-E40Y-FQ1-A
1MX36 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
RENESAS
©2020 ICPDF网 联系我们和版权申明