RF3806 [RFMD]
GaAs HBT PRE-DRIVER AMPLIFIER; 砷化镓HBT预驱动放大器
| 型号： | RF3806 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | GaAs HBT PRE-DRIVER AMPLIFIER |
| 文件： | 总18页 (文件大小：557K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF3806GaAs
HBT Pre-Driver
Amplifier
RF3806
GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: AlN
h
3
Features
VCC1
VREF
1
2
3
4
8
7
6
5
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
Bias
Circuit
4W Output Power
High Linearity
1500MHz to 2200MHz Oper-
ation
RF IN
5V to 8V Supply with Adjust-
able Bias
V_BIAS
PACKAGE BASE
GND
Applications
GaAs HBT Linear Amplifier
Power Amplifier Stage for
Commercial Wireless Infra-
structure (DCS, PCS, UMTS)
Functional Block Diagram
Product Description
The RF3806 is a GaAs power amplifier, specifically designed for linear
applications. Using a highly reliable GaAs HBT fabrication process, this
high-performance two-stage amplifier achieves high output power over a
broad frequency range. An evaluation board is available to address
UMTS2100 applications.
Ordering Information
RF3806
GaAs HBT Pre-Driver Amplifier
RF3806PCK-415
Fully Assembled Evaluation Board - UMTS2100
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-113
RF3806
Absolute Maximum Ratings
Parameter
Rating
Unit
V
Caution! ESD sensitive device.
Supply Voltage (V and V
)
BIAS
8
CC
DC Supply Current
2870
23
mA
dBm
°C
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
3
Maximum Input Power
Operating Ambient Temperature
Storage Temperature
+85
+125
°C
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall - UMTS2100
VCC=8V
Frequency
2110
2170
MHz
dBm
I
=60mA, V =V
=V =8V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
35
17
36
37
19
Performance with impedance match as per
UMTS evaluation board
Gain (S21)
18
-12
-6
dB
dB
dB
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
47
dBm
23dBm/tone
Power Supply
Power Supply Voltage
8
V
Supply Current (I +I
)
660
730
800
50
mA
I
CCQ
CC BIAS
Power Down Current
VCC=6V
μA
V
=0V, V =V
=8V
BIAS
REF
CC
Frequency
2110
2170
MHz
I
=60mA, V =V
=V =6V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
34.5
18
dBm
dB
Performance with impedance match as per
UMTS evaluation board
Gain (S21)
Two-Tone Specification
OIP3
46
dBm
21dBm/tone
Power Supply
Power Supply Voltage
6
V
Supply Current (I +I
)
718
mA
I
I
CC BIAS
CCQ
VCC=5V
Frequency
2110
2170
MHz
=60mA, V =V
=V =5V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
33
dBm
dB
Performance with impedance match as per
UMTS evaluation board
Gain (S21)
18.5
Two-Tone Specification
OIP3
45
dBm
20dBm/tone
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-114
Rev A3 DS070509
RF3806
Specification
Typ.
Parameter
Power Supply
Unit
Condition
Min.
Max.
Power Supply Voltage
5
V
3
Supply Current (I +I
)
707
mA
I
I
CC BIAS
CCQ
Overall - PCS1900
VCC=8V
Frequency
1930
1990
MHz
dBm
=60mA, V =V
=V =8V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
37
Performance with impedance match as per
DCS/PHS/PCS low power linear application
schematic
Gain (S21)
18
-14
-8
dB
dB
dB
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
52
dBm
23dBm/tone
Power Supply
Power Supply Voltage
8
V
Supply Current (I +I
)
660
730
800
50
mA
I
CCQ
CC BIAS
Power Down Current
VCC=6V
μA
V
=0V, V =V
=8V
BIAS
REF
CC
Frequency
1930
1990
MHz
dBm
I
=60mA, V =V
=V =6V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
35
Performance with impedance match as per
DCS/PHS/PCS low power linear application
schematic
Gain (S21)
18
49
dB
Two-Tone Specification
OIP3
dBm
21dBm/tone
Power Supply
Power Supply Voltage
6
V
Supply Current (I +I
)
713
mA
I
I
CC BIAS
CCQ
VCC=5V
Frequency
1930
1990
MHz
dBm
=60mA, V =V
=V =5V,
REF
CC
BIAS REF
Temp=+25°C
P1dB
33.5
Performance with impedance match as per
DCS/PHS/PCS low power linear application
schematic
Gain (S21)
18.5
49
dB
Two-Tone Specification
OIP3
dBm
20dBm/tone
Power Supply
Power Supply Voltage
5
V
Supply Current (I +I
)
707
mA
I
CCQ
CC BIAS
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-115
RF3806
Pin
1
Function
VCC1
Description
For input stage.
Interface Schematic
Control for active bias. See “Theory of Operation” section.
For input stage. Requires RF match and DC block.
Supply for active bias.
2
3
4
5
VREF
RF IN
VBIAS
RF OUT/
VCC2
3
For output stage. Requires RF match, bias feed and DC block.
See pin 5.
6
7
8
RF OUT/
VCC2
RF OUT/
VCC2
RF OUT/
VCC2
See pin 5.
See pin 5.
Must be soldered to ground pad through as short a path as possible. This
Pkg
Base
GND
path also forms the thermal path for minimum T .
J
Package Drawing
-A-
0.0025
Pin 1
0.005 A
Shaded circle designates
pin 1 location.
0.200 REF
0.024
0.180
REF
0.198
0.236
0.156
Dimensions in inches.
0.025
R.008
0.050
TYP
0.050
REF
0.0780
MAX
0.028
TYP
0.020
7 PL
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-116
Rev A3 DS070509
RF3806
Application Schematic - DCS/PHS/PCS
1800MHz to 2025MHz
Low Power Linear Operation
VCC
3
0 Ω
+
+
0.1 μF
10 μF
10 pF
10 pF
1000 pF
0.1 μF
10 μF
24 nH
VREF
6.8 nH
1000 pF
+
10 pF
1000 pF
0.1 μF
10 μF
270 Ω
270 Ω
270 Ω
270 Ω
+
1000 pF
0.1 μF
10 pF
Open
10 μF
1
2
3
4
8
7
6
5
Bias
Circuit
L2
24 nH
7.5 pF
Open
5.6 pF
RF OUT
10 pF
Open
5.6 pF
RF IN
3.3 pF
Open
Open
Open
Open
Open
Open
*
VBIAS
+
10 pF
0.1 μF
1000 pF
10 μF
* PHS/PCS: 1.8 pF
DCS: 2.4 pF
This schematic for low power linear operation:
21dBm<POUT<27dBm, 5V<VCC<8V. Bias R seen above for 8V and 60mA IREF. See biasing table for setting resistance at
other supply voltages.
Application Schematic - DCS/PCS
1800MHz to 1990MHz
High Power Operation
VCC
+
R10
C48
C40
C51
C50
0 Ω
10 pF
1000 pF
0.1 μF
10 μF
+
C33
C34
C35
0.1 μF
10 μF
10 pF
L4
24 nH
VREF
C27
Open
+
C38
10 pF
C39
1000 pF
C41
0.1 μF
C40
10 μF
R4
390 Ω
R5
390 Ω
R7
430 Ω
R8
430 Ω
+
C5
C11
C7
C8
1000 pF
0.1 μF
10 pF
10 μF
1
2
3
4
8
7
6
5
Bias
Circuit
L2
24 nH
C13
6.8 pF
C14
2.7 pF
50 Ω μstrip
C28
5.1 pF
C30
5.1 pF
RF OUT
50 Ω μstrip
RF IN
C29
2.4 pF
C12
Open
C15
0.5 pF
C8
1 pF
C9
Open
C10
Open
C18
Open
C18
Open
C19
Open
C20
1.5 pF
VBIAS
C49
C48
C44
+
C45
10 pF
0.1 μF
1000 pF
10 μF
This schematic for high power operation:
POUT>27dBm, 5V<VCC<8V. Bias R seen above for 8V and 41mA IREF. See biasing table for setting resistance at other supply
voltages.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-117
RF3806
Evaluation Board Schematic - UMTS2100
R10
0 Ω
VCC
+
+
C33
C34
C35
C48
C49
C51
C50
0.1 μF
10 μF
10 pF
10 pF
1000 pF
0.1 μF
10 μF
L4
24 nH
3
VREF
C27
1000 pF
+
C38
10 pF
C39
1000 pF
C41
0.1 μF
C40
10 μF
R4
270 Ω
R5
270 Ω
R7
270 Ω
R8
270 Ω
+
C5
C11
C7
C6
1000 pF
0.1 μF
10 pF
10 μF
1
2
3
4
8
7
6
5
Bias
Circuit
L2
24 nH
C14
9.1 pF
50 Ω μstrip
C28
9.1 pF
J2
RF OUT
50 Ω μstrip
J1
RF IN
C13
9.1 pF
C29
3.3 pF
C12
Open
C26
Open
C15
Open
C8
Open
L9
15 nH
C10
Open
C16
Open
C30
9.1 pF
C18
Open
C19
Open
C20
2.0 pF
VBIAS
C43
C46
C44
+
C45
10 pF
0.1 μF
1000 pF
10 μF
This eval board for low power linear operation: 21dBm<POUT<27dBm, 5 V<VCC<8V. Bias R seen above for 8V and 60mA IREF
.
See biasing table for setting resistance at other supply voltages.
RF3806 Biasing Table
The resistor values shown below are for varied VCC/ICQ conditions. Biasing for higher quiescent current will give increased lin-
earity. “R_Bias”=equivalent R in line with VREF (see values on evaluation board schematic: R4, R5, R7, R8).
Max allowable IREF=60mA.
V
V
V
R
(at V
)
I
Typical I
mA
CC
REF
BIAS
BIAS
REF
REF
CQ
Volt
Volt
Volt
Ohm
mA
8
7
6
5
8
7
6
5
8
7
6
5
62
45
60
60
60
60
730
726
718
707
28.5
11.5
8
7
6
5
8
7
6
5
8
7
6
5
80.5
60
50
50
50
50
676
670
663
649
40
20
8
7
6
5
8
7
6
5
8
7
6
5
105
80.5
56
41
41
41
41
623
614
601
584
31.5
In I =60mA case, calculated R
was rounded up to nearest 0.5Ω.
REF
BIAS
This to keep I
at or slightly below 60mA max.
REF
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-118
Rev A3 DS070509
RF3806
Evaluation Board Layout
Board Size 2.0” x 2.0”
Board Thickness 0.020”, Board Material Rogers 4350
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-119
RF3806
Theory of Operation
General biasing considerations can be described using RF3806 UMTS evaluation board as a reference. In actual system,
VCC=VBIAS=VREF can be tied together when PA is to remain biased on at all times. For non-constant operation, VCC is tied to
3
VBIAS, and VREF used for turn-on preceding transmit. Table is provided in data sheet for adjusting IREF to desired bias current for
various supply voltage levels (more detailed discussion below).
RF3806 can be used in frequency bands ranging from 1500MHz to 2200MHz. Depending on specific application, the follow-
ing parameters and their trade-offs can be considered: linearity, average output power, signal modulation/peak to average
ratio (PAR), efficiency, dissipated power, junction temperature (Tj), and wear out MTTF. Looking at two distinct examples will
demonstrate how the above mentioned parameters are taken into account. Note that much of the discussed performance can
be found in the data sheet area showing graphs.
First, consider a UMTS pico cell base station transmitter (case 1). Here RF3806 fills the role of final PA, operating from
21dBm-26dBm POUT. VCC can be run from 5V to 8V. Likewise, bias resistance on VREF line can be set to obtain IREF ranging
from 41mA-60mA. The choice of voltage supply and bias is determined by required W-CDMA ACPR spec, desired POUT, and sig-
nal PAR. For instance, consider the following: POUT=26dBm, frequency=2110MHz-2170MHz, signal=W-CDMA test model I
64 DPCH, ACPR requirement over temperature=-45dBc at 5MHz offset. The operating condition here (see data sheet graph
section) would be VCC=8V and IREF=60mA, using impedance match found on UMTS Evaluation Board. For a lower output
power requirement, IREF is kept at 60mA, and VCC reduced to a level below 8V. Sufficient linearity can be obtained at lower
P
OUT, while the decrease in dissipated power yields a lower junction temperature and enhanced MTTF. For thermal consider-
ations, refer to graphs provided for thermal resistance, junction temperature, and MTTF (these three graphs based on RF3806
thermal scan and process reliability data).
For the second example (case 2), consider a higher power application, where POUT=34dBm and linearity requirement is sub-
stantially reduced from that seen in above example. For this application, we might run IREF=41mA with VCC=8V. RF3806 out-
put load line would be set for maximum efficiency and compression point. The result is a transmit PA which obtains output
power spec, while providing high enough efficiency to keep Tj within desired range. Running IREF=41mA avoids unnecessary
power dissipation, as higher IREF is used only in lower power case for linearity enhancement. A DCS/PCS application schematic
is provided in data sheet for higher power applications, along with corresponding information in section containing graphs.
UMTS evaluation board can be converted to the application schematic, with minor changes to input, output, and interstage
matches (interstage @VCC1 pin). Also, bias resistors at VREF are scaled for lower IREF=41mA. EDGE ACP plots are provided in
the graph section. Note that the matching also covers transmit bands for 1850-1910 CDMA. As a result, this converted appli-
cation board could also be considered for CDMA booster/repeater.
As mentioned above, junction temperature is an important consideration when operating at maximum VCC (8V). The most
demanding scenario, case 1 above, will be considered here as an illustration. In the data sheet graph section, refer to graphs
of Tj vs POUT, RTH vs POUT, and RF3806 wear out MTTF vs Tj. During thermal scan, RF3806 eval board is affixed to a large, tem-
perature controlled stage, held at ambient. The device is etched open, such that thermal image of die can be taken. Reference
temperature is measured at evaluation board to stage interface by thermocouple, placed through a thin groove such that it
makes contact with underside eval board GND plane (directly beneath RF3806). Thermocouple measures "reference tempera-
ture", from which RTH_JREF (junction to reference) is determined. Evaluation board thermal resistance, RTH_BOARD, has been
modeled at 1°C/W. Knowing these two values allows us to calculate junction to case thermal resistance of
RF3806=RTH_JC=RTH_JREF-RTH_BOARD=RTH_JREF-1 (see graph). Thus, RTH_JC is defined as thermal resistance from junction to
GND slug of device.
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-120
Rev A3 DS070509
RF3806
At POUT=26dBm, see that Tj=160°C for ambient (stage) temperature=85°C. At this condition, temperature of case (GND
slug) is calculated:
TCASE=TREF+PDISS*(RTH_BOARD)=94°C+(6.191W)*1°C/W=100.2°C. Note that TREF was elevated to 94°C when stage was
set at 85°C. Thus, thermal resistance results can be subject to where one defines "ambient".
3
Using MTTF curve, it is seen that MTTF=80 years for 160°C junction temperature. In a design where higher MTTF is desired,
one option would be to run RF3806 at reduced VCC. Viewing UMTS ACP curves in graph section of data sheet, VCC=6V/25dBm
shows equivalent linearity to VCC=8V/26dBm. Reducing POUT specification to 25dBm will allow for higher MTTF while operat-
ing at VCC=6V. A practical approximation to Tj at adjusted operating condition can be made. Assume TCASE equal to 100.2°C,
as with VCC=8V and 26dBm out (conservative estimate). Dissipated power for 6V/25dBm/85°C is known from test data to
be 4.385W. From data sheet graph, RTH_JC=9.95°C/W. Tj is approximated to be:
Tj=100.2+4.385*9.95=144°C
MTTF curve shows >450 years for this Tj. As mentioned, the above analysis is not exact, but does give us a practical way to get
an idea of where a condition will fall in terms of Tj and MTTF. Required data to do the calculation: data sheet curves and evalu-
ation board test in temperature chamber (to determine dissipated power).
Note that projected Tj vs Pout curves are included with DCS/PCS data (1800MHz-1990MHz high power application sche-
matic), to illustrate the same type of trade offs between operating at 6V and 8V. These curves are approximate, obtained with
the following method (called out in above paragraph):
1. UMTS evaluation board was converted to matching seen on DCS/PCS application schematic (changes @ input/out-
put/interstage/bias resistors at VREF).
2. Evaluation board was run in oven at 85°C ambient.
3. Dissipated power was calculated at each data point. Using RTH_JREF from data sheet curve, temperature delta to RF3806
junction (Tj) can be obtained. Tj was then plotted, and can be applied to MTTF vs Tj curve.
Finally, a description is included here for running two RF3806 in parallel with hybrid combiners. This approach enables design
to achieve substantial linearity enhancement for a given POUT, while maintaining low die temperature. In this example, hybrid
couplers (combiners) from Anaren (part number XC2100E-03) are used with 2 RF3806 UMTS evaluation boards. The bias con-
dition is VCC=6V, IREF=60mA. ACP performance vs temperature is shown in graph section, which can be compared to that for
single PA.
RFMD can be contacted to obtain RF3806 qualification report, which adheres to demanding infrastructure standards.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-121
RF3806
Small Signal Gain
UMTS Band (Data taken on UMTS Evaluation Board)
OIP3 versus POUT versus Frequency versus VCC
UMTS Band (Data taken on UMTS Evaluation Board)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
51.0
50.0
49.0
48.0
47.0
46.0
45.0
44.0
3
Vcc = 8 V 2110 MHz
Vcc = 8 V 2140 MHz
Vcc = 8 V 2170 MHz
Vcc = 6 V 2110 MHz
Vcc = 6 V 2140 MHz
Vcc = 6 V 2170 MHz
Vcc = 5 V 2110 MHz
Vcc = 5 V 2140 MHz
Vcc = 5 V 2170 MHz
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0
Freq (MHz)
19.0
20.0
21.0
22.0
23.0
24.0
P_Tone (dBm)
OP1dB versus VCC versus Frequency
UMTS Band (Data taken on UMTS Evaluation Board)
OIP3 versus Frequency versus VCC, at 10dB Back-off
from OP1dB, UMTS Band (Data taken on UMTS Evaluation Board)
51.0
37.0
36.5
36.0
35.5
35.0
34.5
34.0
33.5
33.0
32.5
50.0
49.0
48.0
47.0
46.0
45.0
44.0
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0
Frequency (MHz)
2100.0 2110.0 2120.0 2130.0 2140.0 2150.0 2160.0 2170.0 2180.0
Frequency (MHz)
W-CDMA ACP versus POUT versus Temperature
W-CDMA ACP versus POUT versus Temperature
Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%
IREF=60mA VCC=6V (Data taken on UMTS Evaluation Board)
Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%
IREF=60mA VCC=8V (Data taken on UMTS Evaluation Board)
-40.0
-42.0
-41.0
-42.0
-43.0
-44.0
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
-56.0
-57.0
-58.0
-59.0
-60.0
-61.0
-62.0
-63.0
-43.0
-44.0
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
-56.0
-57.0
-58.0
25C 2110 MHz 6 V
25C 2170 MHz 6 V
85C 2110 MHz 6 V
85 C 2170 MHz 6 V
-40 C 2110 MHz 6 V
-40 C 2170 MHz 6 V
25 C 2110 MHz 8 V
25 C 2170 MHz 8 V
85 C 2110 MHz 8 V
85 C 2170 MHz 8 V
-40 C 2110 MHz 8 V
-40 C 2170 MHz 8 V
22.0
22.5 23.0
23.5 24.0
24.5 25.0
25.5 26.0
26.5 27.0
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
POUT (dBm)
POUT (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-122
Rev A3 DS070509
RF3806
W-CDMA ACP versus POUT versus Temperature
Small Signal Gain - PCS Band
(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low
Power Linear Operation)
Signal=W-CDMA Test Model I 64 DPCH PAR=10.3dB @ 0.01%
IREF=60mA VCC=5V (Data taken on UMTS Evaluation Board)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
-41.0
-42.0
-43.0
-44.0
-45.0
-46.0
-47.0
-48.0
-49.0
-50.0
-51.0
-52.0
-53.0
-54.0
-55.0
-56.0
-57.0
-58.0
-59.0
-60.0
-61.0
3
25C 2110 MHz 5 V
25C 2170 MHz 5 V
85C 2110 MHz 5 V
85 C 2170 MHz 5 V
-40 C 2110 MHz 5 V
-40 C 2170 MHz 5 V
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
POUT (dBm)
OIP3 versus Frequency versus VCC, at 10dB Back-off from OP1dB PCS Band
(Data taken on Eval Board Configured as per DCS/PHS/PCS Application Schematic for Low Power
Linear Operation.)
OIP3 versus POUT versus Freq versus VCC - PCS Band
(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low
Power Linear Operation)
55.0
55.0
54.0
53.0
52.0
51.0
50.0
49.0
48.0
47.0
54.0
53.0
52.0
51.0
50.0
49.0
48.0
47.0
Vcc = 8 V 1930 MHz
Vcc = 8 V 1960 MHz
Vcc = 8 V 1990 MHz
Vcc = 6 V 1930 MHz
Vcc = 6 V 1960 MHz
Vcc = 6 V 1990 MHz
Vcc = 5 V 1930 MHz
Vcc = 5 V 1960 MHz
Vcc = 5 V 1990 MHz
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
19.0
20.0
21.0
22.0
23.0
24.0
P_Tone (dBm)
CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB
OP1dB versus VCC versus Freq - PCS Band
(Data taken on Eval Board configured as per DCS/PHS/PCS Application Schematic for Low
Power Linear Operation)
@ 0.01% IREF=60mA VCC=8V (Data taken on Eval Board configured as per DCS/PHS/PCS Application
Schematic for low power linear operation)
37.5
37.0
36.5
36.0
35.5
35.0
34.5
34.0
33.5
33.0
-50.0
-52.0
-54.0
-56.0
-58.0
-60.0
-62.0
-64.0
-66.0
-68.0
-70.0
-72.0
-74.0
-76.0
-78.0
-80.0
Vcc = 8 V
Vcc = 6 V
Vcc = 5 V
25 C 1930 MHz 8 V
25 C 1990 MHz 8 V
85 C 1930 MHz 8 V
85 C 1990 MHz 8 V
-40 C 1930 MHz 8 V
-40 C 1990 MHz 8 V
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0
POUT (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-123
RF3806
CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB
CDMA2K ACP versus POUT versus Temperature, Signal=CDMA2K 9 Channel SR1 PAR=8.5dB
@ 0.01% IREF=60mA VCC=5V (Data taken on Eval Board configured as per DCS/PHS/PCS Application
Schematic for low power linear operation)
@ 0.01% IREF=60mA VCC=6V (Data taken on Eval Board configured as per DCS/PHS/PCS
Application Schematic for low power linear operation)
-50.0
-50.0
-52.0
-54.0
-56.0
-58.0
-60.0
-62.0
-64.0
-66.0
-68.0
-70.0
-72.0
-74.0
-76.0
-78.0
-80.0
-52.0
-54.0
-56.0
-58.0
-60.0
-62.0
-64.0
-66.0
-68.0
-70.0
-72.0
-74.0
-76.0
-78.0
-80.0
3
25C 1930 MHz 5 V
25C 1990 MHz 5 V
85C 1930 MHz 5 V
85 C 1990 MHz 5 V
-40 C 1930 MHz 5 V
-40 C 1990 MHz 5 V
25C 1930 MHz 6 V
25C 1990 MHz 6 V
85C 1930 MHz 6 V
85 C 1990 MHz 6 V
-40 C 1930 MHz 6 V
-40 C 1990 MHz 6 V
21.0
21.5 22.0
22.5 23.0
23.5 24.0
24.5 25.0
25.5 26.0
22.0 22.5 23.0 23.5 24.0 24.5 25.0 25.5 26.0 26.5 27.0 27.5 28.0
POUT (dBm)
POUT (dBm)
DCS/PCS EDGE ACP VCC=8V IREF=41mA
DCS/PCS EDGE ACP VCC=6V IREF=41mA
(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)
(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
-85.0
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
-60.0
-65.0
-70.0
-75.0
-80.0
-85.0
1800 MHz Vcc = 8 V 200 kHz
1800 MHz Vcc = 8 V 400 kHz
1800 MHz Vcc = 8 V 600 kHz
1880 MHz Vcc = 8 V 200 kHz
1880 MHz Vcc = 8 V 400 kHz
1880 MHz Vcc = 8 V 600 kHz
1930 MHz Vcc = 8 V 200 kHz
1930 MHz Vcc = 8 V 400 kHz
1930 MHz Vcc = 8 V 600 kHz
1990 MHz Vcc = 8 V 200 kHz
1990 MHz Vcc = 8 V 400 kHz
1990 MHz Vcc = 8 V 600 kHz
1800 MHz Vcc = 6 V 200 kHz
1800 MHz Vcc = 6 V 400 kHz
1800 MHz Vcc = 6 V 600 kHz
1880 MHz Vcc = 6 V 200 kHz
1880 MHz Vcc = 6 V 400 kHz
1880 MHz Vcc = 6 V 600 kHz
1930 MHz Vcc = 6 V 200 kHz
1930 MHz Vcc = 6 V 400 kHz
1930 MHz Vcc = 6 V 600 kHz
1990 MHz Vcc = 6 V 200 kHz
1990 MHz Vcc = 6 V 400 kHz
1990 MHz Vcc = 6 V 600 kHz
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
POUT (dBm)
POUT (dBm)
DCS/PCS Projected Junction Temperature at 85°C Ambient
(See Theory of Operation section, and DCS/PCS High Power Application Schematic,
1800MHz to 1990MHz) IREF=41mA
DCS/PCS OP1dB IREF=41mA
(See DCS/PCS High Power Application Schematic, 1800MHz to 1990MHz)
38.0
37.5
37.0
36.5
36.0
35.5
35.0
34.5
34.0
174.0
172.0
170.0
168.0
166.0
164.0
162.0
160.0
158.0
156.0
154.0
152.0
150.0
148.0
146.0
144.0
142.0
140.0
138.0
136.0
134.0
132.0
130.0
Vcc = 8 V 1800 MHz
Vcc = 8 V 1880 MHz
Vcc = 8 V 1930 MHz
Vcc = 8 V 1990 MHz
Vcc = 6 V 1800 MHz
Vcc = 6 V 1880 MHz
Vcc = 6 V 1930 MHz
Vcc = 6 V 1990 MHz
Vcc = 8 V
Vcc = 6 V
1780.0
1830.0
1880.0
1930.0
1980.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
P_Tone (dBm)
POUT (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-124
Rev A3 DS070509
RF3806
UMTS Evaluation Boards in Hybrid Coupler Configuration:
Test Signal=W-CDMA Test Model I, 64 DPCH VCC=6V, IREF=60mA
Wear Out MTTF versus Tj
(See Theory of Operation section)
500.0
475.0
450.0
425.0
400.0
375.0
350.0
325.0
300.0
275.0
250.0
225.0
200.0
175.0
150.0
125.0
100.0
75.0
-42.0
-44.0
-46.0
-48.0
-50.0
-52.0
-54.0
-56.0
-58.0
-60.0
-62.0
-64.0
3
25C 2110 MHz
25C 2170 MHz
-40C 2110 MHz
-40C 2170 MHz
85 C 2110 MHz
85C 2170 MHz
50.0
25.0
0.0
145.0
150.0
155.0
160.0
165.0
170.0
175.0
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
Tj (°C)
POUT (dBm)
UMTS VCC=8V and IREF=60mA, Rth versus POUT @ 85°C Ambient
(See Theory of Operation section for details)
UMTS VCC=8V and IREF=60mA, Tj versus POUT @ 85°C Ambient
(See Theory of Operation section for details)
170.0
169.0
168.0
167.0
166.0
165.0
164.0
163.0
162.0
161.0
160.0
159.0
158.0
157.0
156.0
155.0
154.0
153.0
152.0
151.0
150.0
12.0
11.5
11.0
10.5
10.0
9.5
Rth_jref
Rth_jc
9.0
10.0 12.0 14.0 16.0 18.0
20.0 22.0 24.0 26.0 28.0 30.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
POUT (dBm)
POUT (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-125
RF3806
DCS/PCS High Power Application Schematic, Typical Response
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-126
Rev A3 DS070509
RF3806
PCS/PHS/PCS Low Power Linear Application Schematic, Typical Response
(Input matched for PCS, see data sheet schematic)
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-127
RF3806
UMTS Evaluation Board Typical Response
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-128
Rev A3 DS070509
RF3806
UMTS Evaluation Boards in Hybrid Coupler Configuration, Typical Response
3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509
3-129
RF3806
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is 3μinch
to 8μinch gold over 180μinch nickel.
3
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and tested
for optimized assembly at RFMD; however, it may require some modifications to address company specific assembly pro-
cesses. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 1.14 x 0.71
B = 1.02 x 0.71 Typ.
C = 3.96 x 4.44
Dimensions in mm.
5.93
Pin 1
A
B
B
B
B
B
B
B
1.27 Typ.
1.90
C
3.81 Typ.
3.00
5.99 Typ.
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the PCB
metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all pads. The
center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask clearance can be
provided in the master data or requested from the PCB fabrication supplier.
A = 1.30 x 0.86
B = 1.17 x 0.86 Typ.
C = 4.11 x 4.60
Dimensions in mm.
5.93
Pin 1
A
B
B
B
B
B
B
B
1.27 Typ.
1.90
C
3.81 Typ.
3.00
5.99 Typ.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3-130
Rev A3 DS070509
相关型号：
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