RFCM3316SQ [RFMD]
45-1218MHZ GAAS/G POWER DOUBLER MODULE;
| 型号： | RFCM3316SQ |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 45-1218MHZ GAAS/G POWER DOUBLER MODULE |
| 文件： | 总8页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFCM3316
45-1218MHZ GAAS/GAN
POWER DOUBLER MODULE
The RFCM3316 is a Power Doubler amplifier SMD Module. The
part employs GaAs pHEMT die and GaN HEMT die, has high
output capability, and is operated from 45MHz to 1218MHz. It
provides excellent linearity and superior return loss performance
with low noise and optimal reliability.
Package: 9 pin,
9.0 mm x 8.0 mm x 1.375mm
Features
DC current of the device can be externally adjusted for optimum
distortion performance versus power consumption over a wide
range of output level.
.
.
.
.
.
.
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
Current
Setting
Temperature
Sensing
.
.
.
.
Extremely High Output Capability
22.5dB Min. Gain at 1218MHz
450mA Max. at 24VDC
V+
Temperature Sensing Feature
INPUT
OUTPUT
Applications
.
45MHz to 1218MHz CATV
Amplifier Systems
RFCM3316
Functional Block Diagram
Ordering Information
RFCM3316SB
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
RFCM3316SQ
RFCM3316SR
RFCM3316TR7
7” Reel with 500 pieces
RFCM3316TR13
RFCM3316PCBA-410
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS141006
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 8
RFCM3316
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
75
Unit
dBmV
V
RF Input Voltage (single tone; on evaluation board)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
30
-40 to +100
-30 to +110
MSL 3 @260
°C
RoHS status based on EU Directive
2011/65/EU
Operating Mounting Base Temperature
Moisture Sensitivity Level IPC/JEDEC J-STD-20
°C
°C
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Nominal Operating Parameters
Specification
Parameter
Unit
Condition
Min
Typ
Max
General Performance
V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical
Power Gain
21.0
22.5
1.0
21.5
23.0
1.5
22.0
24.0
2.5
1
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
f=45MHz
f=1218MHz
Slope[1]
f=45MHz to 1218MHz
f=45MHz to 1218MHz (Peak to Valley)
f=45MHz to 320MHz
Flatness of Frequency Response
Input Return Loss
20
19
18
16
15
20
19
18
17
16
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1218MHz
f=45MHz to 320MHz
Output Return Loss
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1218MHz
f=50MHz to 1218MHz
Noise Figure
3.0
4.0
Total Current Consumption (DC)
430
450
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 8
RFCM3316
Specification
Typ
Parameter
Unit
Condition
Min
Max
Distortion data 40MHz to 550MHz
V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical
CTB
-73
-65
-76
60
-68
-60
-70
dBc
dBc
dBc
dB
XMOD
CSO
CIN
VO=61dBmV at 1000MHz, 18dB extrapolated tilt, 79 analog
channels plus 75 digital channels (-6dB offset)[2][4]
55
Distortion data 40MHz to 550MHz
V+= 24V; TMB=30°C; ZS=ZL=75Ω; IDC=IDC typical
CTB
-80
-78
-80
59
dBc
dBc
dBc
dB
XMOD
CSO
CIN
VO=60dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog
channels plus 111 digital channels (-6dB offset)[3][4]
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +52.4dBmV tilted output level, plus 75
digital channels, -6dB offset relative to the equivalent analog carrier.
3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +38dBmV to +47.4dBmV tilted output level, plus 111
digital channels, -6dB offset relative to the equivalent analog carrier.
4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite
Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is
measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to
Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 8
RFCM3316
RFCM3316 Current Adjustment
The RFCM3316 can be operated over a wide range of current to provide maximum required performance with
minimum current consumption. Changing the value of resistor R3 on application circuit allows a variation of the current
between 430mA and 330mA (typ.). Within the recommended range of current between 430mA and 370mA gain (S21)
change is less than 0.2dB and noise figure change is less than 0.1dB.
Current versus Resistor R3 (typical values)
I [mA]
440
420
400
380
360
340
320
Device Current [mA],
typical
R3 [Ω]
V+= 24V; TMB=30°C;
ZS=ZL=75Ω
430
410
390
370
350
330
1500
1400
1300
1240
1150
1050
1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
R3 [Ω]
Device Current versus Distortion Degradation (typical values)
I [mA]
440
420
400
380
360
340
320
CTB
CIN
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
CTB and CIN degradation [dB]
Test condition:
V+= 24V; TMB=30°C; ZS=ZL=75Ω; VO=61dBmV at 1000MHz, 18dB extrapolated tilt,
79 analog channels plus 75 digital channels (-6dB offset)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 8
RFCM3316
RFCM3316 Temperature Sensing Feature
The RFCM3316 provides an internal NTC resistor for temperature sensing. This resistor is located right next to the
output transistor stage. Within the application circuit the NTC is built in a voltage divider. The output voltage of the
voltage divider (Vt) can be correlated to the module backside temperature.
Module Backside Temperature versus Vt (typical values)
Temperature [°C]
120
110
100
90
80
70
60
50
40
30
20
750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000
Vt [mV]
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 8
RFCM3316
Evaluation Board Schematic
FB1
Bead 60Ω
V+
R1
5.1kΩ
R13
3.3kΩ
C1
220pF
D1
TGL34-33A
Vt
R2
3kΩ
C13
D2
4.7nF
GND
MM3Z5V6T1
R3
1.5kΩ
C8
4.7nF
C3
4.7nF
9
8
7
6
5
T1
T2
1
2
3
4
RFXF0006
RFXF0008
T3
R5
470Ω
RFXF0009
C4
1.2pF
C2
4.7nF
C7
4.7nF
R4
10Ω
U1
RFCM3316
RF IN
RF OUT
R6
470Ω
C6
4.7nF
C9
DNI
R7
DNI
C10
0.5pF
C11
0.5pF
R10
DNI
C12
DNI
C5
1.2pF
R8
DNI
R11
DNI
R9
DNI
R12
DNI
Evaluation Board Assembly Drawing
Note:
The ground plane of the RFCM3316 module should be soldered onto a board equipped with as many thermal vias as possible.
Underneath this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete
module DC power (up to 10.4 Watts). In any case the module backside temperature should not exceed 110°C.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 8
RFCM3316
Evaluation Board Bill of Materials (BOM)
Component Type
PCB
Value
Qty
1
Designator
Comment
Evaluation-Board PI816A
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Resistor
220pF
4.7nF
1
C1
6
C2, C3, C6, C7, C8, C13
1.2pF
2
C4, C5
C9, C12
C10, C11
R1
DNI
4
Optional to improve matching in application
Optional to improve matching in application
0.5pF
2
5.1kΩ
3kΩ
1
Resistor
1
R2
Resistor
1.5kΩ
10Ω
1
R3
Resistor
1
R4
Resistor
470Ω
2
R5, R6
R7-R12
R13
Resistor
DNI
6
Optional to improve matching in application
Resistor
3.3kΩ
60Ω @ 100MHz
1
Impedance Bead
1
FB1
Transient Voltage
Suppressor Diode
TGL34-33A
1
D1
Zener Diode
Transformer
Transformer
Transformer
DUT
MM3Z5V6T1G
RFXF0006
RFXF0008
RFXF0009
RFCM3316
1
1
1
1
1
D2
T1
T2
T3
U1
Pin Out
RF OUT +
Rt
9
8
7
6
5
RF IN +
GND
1
2
3
4
GND
V+
GND
GND
RF IN -
RF OUT -
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 8
RFCM3316
Pin Names and Descriptions
Pin
Name
RF IN +
GND
Description
RF AMP Positive Input
Ground pins
1
2, 3, 6
4
5
7
8
9
RF IN -
RF OUT -
V+
RF AMP Negative Input
RF AMP Negative Output
Supply Voltage, +24V
Rt
NTC Output for Temperature Sensing
RF AMP Positive Output
RF OUT +
Package Outline and Branding Drawing (Dimensions in millimeters)
9.000±0.100
3.700
PIN 1 Indicator
Pin1
A
A
A
A
A
2x 2.000
1.000
1.000
A
A
A
A
0.650
0.000
0.650
RFCM3316
YYWW
DATA CODE
(YEAR/WEEK)
2x 2.000
3.700
Trace Code
A= 0.600 x 0.600 mm
molding cap
substrate
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141006
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
8 of 8
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