RFGA2012 [RFMD]
InGaP HBT LOW POWER LINEAR AMPLIFIER;
| 型号： | RFGA2012 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | InGaP HBT LOW POWER LINEAR AMPLIFIER 放大器 |
| 文件： | 总12页 (文件大小：1533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFGA2012
InGaP HBT
Low Power Lin-
ear Amplifier
RFGA2012
InGaP HBT LOW POWER LINEAR AMPLIFIER
Package: DFN, 8-Pin, 2mmx2mm
Features
1
2
3
4
8
NC
RFIN
GND
NC
VBIAS
High OIP3=35dBm at 1960MHz
Low DC Power: 3.3V, 23mA
Low NF = 1.6dB at 1960MHz
50MHz to 3000MHz Operation
Power Down Capability
RFOUT/VCC
NC
7
6
5
Class 1C (1000V) HBM ESD
Rating
GND
MSL 1 Rating
Common Platform Compatible
Applications
Low Power Linear Gain Stage
Functional Block Diagram
Product Description
IF, Cellular, DCS, PCS, UMTS,
WLAN, WiMax, TD-SCDMA,
LTE Amplifiers
The RFGA2012 is specifically designed to achieve high OIP3 with minimal
DC power. Ultra-linear performance has been demonstated in standard
frequency bands within 150MHz to 3GHz. The RFGA2012 features a
VBIAS pin that allows users to optimize the quiescent current for specific
requirements. The VBIAS pin also serves as a power-down pin. The
RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured
using RFMD's InGaP HBT process to minimize Beta process variation.
Low Power LNA
Ordering Information
RFGA2012SR
7” Reel with 100 pieces
RFGA2012SQ
25-piece sample bag
RFGA2012TR7
RFGA2012TR13
RFGA2012PCK-410
RFGA2012PCK-411
7” Reel with 750 pieces
13” Reel with 2500 pieces
1800MHz to 2200MHz PCBA with 5-piece sample bag
2600MHz to 2700MHz PCBA with 5-piece sample bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
1 of 12
RFGA2012
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Collector-to-Emitter Voltage (V
)
5.5
V
CE
DC Supply Current (Ic)
35
+20
mA
dBm
dBm
dBm
°C
CW Input Power, 2:1 Output VSWR, 5.0V
CW Input Power, 2:1 Output VSWR, 5.5V
Output Load VSWR at P3dB
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
+15
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
5:1
Operating Temperature Range (T )
-40 to +85
L
Operating Junction Temperature (T )
J
150
°C
°C
Max Storage Temperature
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
Notes:
-40 to +150
Class 1C
MSL 1
1. The maximum ratings must all be met simultaneously.
2. =P +P -P
P
DISS
DC
RFIN RFOUT
3. T =T + P
*R
J
L
DISS TH
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
V
= 3.3V, I = 23mA (includes I
CQ
)
)
)
150MHz
Frequency
Gain
CC
BIAS
BIAS
BIAS
130
150
25
270
MHz
dB
Input Return Loss
Output Return Loss
P1dB
14
dB
14
dB
12.5
30
dBm
dBm
dB
OIP3
0dBm/tone, tone spacing = 1MHz
= 3.3V, I = 23mA (includes I
Noise Figure
900MHz
Frequency
Gain
3.8
V
CC
CQ
869
915
19
960
MHz
dB
Input Return Loss
Output Return Loss
P1dB
14
dB
14
dB
14.5
34.5
2.7
dBm
dBm
dB
OIP3
0dBm/tone, tone spacing = 1MHz
= 3.3V, I = 23mA (includes I
Noise Figure
1960MHz
Frequency
Gain
V
CC
CQ
1800
1960
14.5
10
2200
MHz
dB
Input Return Loss
Output Return Loss
P1dB
dB
14.5
13.5
35
dB
dBm
dBm
dB
OIP3
0dBm/tone, tone spacing = 1MHz
Noise Figure
1.6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
2 of 12
DS110215
RFGA2012
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
V
= 3.3V, I = 23mA (includes I
)
BIAS
2650MHz
Frequency
Gain
CC
CQ
2600
2650
12
2700
MHz
dB
Input Return Loss
Output Return Loss
P1dB
11
dB
16
dB
15
dBm
dBm
dB
OIP3
34
0dBm/tone, tone spacing = 1MHz
Noise Figure
Power Supply
1.6
Operating Current (I + I
), Quiescent
23.0
3.3
mA
V
=3.3V (includes I
current ~2-3mA),
BIAS
CQ
BIAS
CE
per 1960 EVB
Collector-to-Emitter operating voltage
=0.0V, V =3.3V
Recommended Operating Voltage (V
Power Down Current
)
5.0
20
V
CE
A
V
BIAS
CE
Thermal Resistance (R
)
365
C/W
See R graph on page 3
TH
TH
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
3 of 12
RFGA2012
Typical Performance: 1800MHz to 2200MHz Application Circuit
S11 versus Frequency
S21 versus Frequency
0
-5
18
16
14
12
10
8
-10
-15
-20
-25
-30
-40°C
25°C
85°C
-40°C
25°C
85°C
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
S22 versus Frequency
0
-5
0
-40°C
25°C
85°C
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40°C
25°C
85°C
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
Frequency (GHz)
Frequency (GHz)
Rth vs. Voltage and Output Power (1960MHz)
Tjmax vs. Voltageand Output Power (1960MHz)
420
400
380
360
340
320
300
280
260
240
220
180
170
160
150
140
130
120
110
100
90
Tmax-3.3V
Tmax-4.0V
Tmax-4.5V
Tmax-5.0V
Rth-3.3V
Rth-4.0V
Rth-4.5V
Rth-5.0V
80
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
CW Output Power (dBm)
CW Output Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 12
DS110215
RFGA2012
Typical Performance: 1800MHz to 2200MHz Application Circuit
OIP3 versus Output Power (1960 MHz)
OIP3 versus Frequency (0dBm tones)
38
36
34
32
30
28
38
36
34
32
30
28
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
-5
-4
-3
-2
-1
0
1
2
3
4
5
Frequency (GHz)
Power Out Per Tone (dBm)
P1dB versus Frequency
Noise Figureversus Frequency
18
16
14
12
10
8
3.0
2.5
2.0
1.5
1.0
0.5
0.0
+25°C
-40°C
+25°C
+85°C
+85°C
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
Frequency (GHz)
Frequency (GHz)
Pout & Collector Current vs. Pin @ 1960MHz
18
23
Pout_25C
Pout_-40C
Pout_85C
Ic_25C
Ic_-40C
Ic_85C
16
14
12
10
8
22
21
20
19
18
17
16
15
14
13
6
4
2
0
-2
-16 -14 -12 -10
-8
-6
-4
-2
0
2
4
Input Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
5 of 12
RFGA2012
Evaluation Board Schematic
1800MHz to 2200MHz Application Circuit
VBIAS
VCC
C6
4.7uF
VBIAS
P1
1
2
3
C4
4.7uF
GND
VCC
4
R1
160 ohm
HDR_1X4
GND
C9
1000pF
C3
1uF
L1
3.3nH
U1
C1
1uF
1
2
3
4
8
L2
NC
VBIAS
J1
1nH
J2
7
6
5
RFIN
RFIN RFOUT/VCC
RFOUT
C11
0.9pF
NC
NC
R2
0.2pF
C2
0.5pF
GND
GND
R4
10 ohm
Evaluation Board BOM
1800MHz to 2200MHz Application Circuit
Description
Reference Designator
Manufacturer
Manufacturer’s P/N
PCB
GA2012410(A)
Low Noise, Linear Gain Block Amplifier
CAP, 4.7uF, 10%, 10V, X5R, 0603
CAP, 1000pF, 10%, 50V, X7R, 0402
CAP, 1uF, 10%, 10V, X5R, 0402
CAP, 0.5pF, +/-0.1pF, 50V, HI-Q, 0402
CAP, 0.2pF, +/-0.05pF, 50V, HI-Q, 0402
CAP, 0.9pF, +/-0.1pF, 50V, HI-Q, 0402
IND, 1nH, +/-0.1nH, T/F, 0402
IND, 3.3nH, +/-0.1nH, T/F, 0402
RES, 160, 5%, 1/16W, 0402
RES, 10, 5%, 1/16W, 0402
U1
RFMD
RFGA2012
C4, C6
TDK Corporation
Murata Electronics
Murata Electronics
Johanson Technology
Johanson Technology
Johanson Technology
Murata Electronics
Murata Electronics
Kamaya, Inc
C1608X5R1A475K
GRM155R71H102KA01E
GRM155R61A105KE15D
500R07S0R5BV4TD
500R07S0R2AV4TD
500R07S0R9BV4TD
LQP15MN1N0B02D
LQP15MN3N3B02D
RMC1/16S-161JTH
RMC1/16S-100JTH
142-0701-821
C9
C1, C3
C2
R2
C11
L2
L1
R1
R4
Kamaya, Inc
CONN, SMA, END LNCH, FLT, 0.062"
CONN, HDR, ST, PLRZD, 4-PIN, 0.100"
DNP
J1, J2
Emerson Network Power
ITW Pancon
P1
MPSS100-4-C
C5, C7, C8, C10, C14, R3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 12
DS110215
RFGA2012
Evaluation Board Assembly Drawing
1800MHz to 2200MHz Application Circuit
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
7 of 12
RFGA2012
Typical Performance: 2600MHz to 2700MHz Application Circuit
S11 versus Frequency
S21 versus Frequency
16
14
12
10
8
0
-5
-10
-15
-20
-25
-30
-40°C
-40°C
25°C
85°C
25°C
85°C
6
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
S12 versus Frequency
S22 versus Frequency
0
0
-40°C
25°C
85°C
-5
-10
-15
-20
-25
-30
-5
-10
-15
-20
-25
-30
-40°C
25°C
85°C
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
8 of 12
DS110215
RFGA2012
Typical Performance: 2600MHz to 2700MHz Application Circuit
OIP3 versus Output Power (2650 MHz)
OIP3 versus Frequency (0dBm tones)
38
36
34
32
30
28
38
36
34
32
30
28
+25°C
-40°C
+85°C
+25°C
-40°C
+85°C
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
-5
-4
-3
-2
-1
0
1
2
3
4
5
Power Out Per Tone (dBm)
Noise Figureversus Frequency
P1dB versus Frequency
18
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
8
+25°C
-40°C
+85°C
+25°C
+85°C
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
2.60 2.61 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 2.70
Frequency (GHz)
Pout & CollectorCurrent vs. Pin @ 2650MHz
18
23
22
21
20
19
18
17
16
15
14
13
16
14
12
10
8
6
Pout_25C
Pout_-40C
Pout_85C
Ic_25C
4
2
Ic_-40C
0
Ic_85C
-2
-12 -10
-8
-6
-4
-2
0
2
4
6
8
Input Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
9 of 12
RFGA2012
Evaluation Board Schematic
2600MHz to 2700MHz Application Circuit
VBIAS
VCC
C6
4.7uF
VBIAS
P1
C4
1
4.7uF
GND
VCC
2
3
4
R1
160 ohm
HDR_1X4
C9
1000pF
GND
C3
1uF
L1
1.8nH
U1
C1
1uF
1
2
3
4
8
NC
VBIAS
J1
J2
7
6
5
RFIN
RFOUT
RFIN RFOUT/VCC
C11
1pF
NC
NC
R2
0.2pF
GND
GND
R4
10 ohm
Evaluation Board BOM
2600MHz to 2700MHz Application Circuit
Description
Reference Designator
Manufacturer
Manufacturer’s P/N
PCB
GA2012411(A)
Low Noise, Linear Gain Block Amplifier
CAP, 4.7uF, 10%, 10V, X5R, 0603
CAP, 1000pF, 10%, 50V, X7R, 0402
CAP, 1uF, 10%, 10V, X5R, 0402
CAP, 0.2pF, +/-0.05pF, 50V, HI-Q, 0402
CAP, 1pF, +/-0.1pF, 50V, HI-Q, 0402
IND, 1.8nH, +/-0.1nH, T/F, 0402
RES, 160, 5%, 1/16W, 0402
RES, 10, 5%, 1/16W, 0402
CONN, SMA, END LNCH, FLT, 0.062"
CONN, HDR, ST, PLRZD, 4-PIN, 0.100"
DNP
U1
RFMD
RFGA2012
C6, C4
TDK Corporation
Murata Electronics
Murata Electronics
Johanson Technology
Johanson Technology
Murata Electronics
Kamaya, Inc
C1608X5R1A475K
GRM155R71H102KA01E
GRM155R61A105KE15D
500R07S0R2AV4TD
500R07S1R0BV4TD
LQP15MN1N8B02D
RMC1/16S-161JTH
RMC1/16S-100JTH
142-0701-821
C9
C1, C3
R2
C11
L1
R1
R4
Kamaya, Inc
J1, J2
Emerson Network Power
ITW Pancon
P1
MPSS100-4-C
C5, C7, C8, C10, C14, R3
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
10 of 12
DS110215
RFGA2012
Evaluation Board Assembly Drawing
2600MHz to 2700MHz Application Circuit
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110215
11 of 12
RFGA2012
Pin Table and Description
Description
Pin
Function
NC
No Internal Connection
1
RF Input. External DC Block is Required
Ground
2
RF IN
GND
NC
3
No Internal Connection
4
Ground
5
6
GND
NC
No Internal Connection
RF Output, Device Collector
7
RF OUT
VBIAS
NC
Supply Voltage for Bias Circuit, Power-down Pin
Thermal Ground. Must be Soldered to EVB Ground Plane Over a Bed of Vias.
8
EPAD
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances
TOP VIEW
BOTTOM VIEW
PIN #1 IDENTIFICATION
R0.100
.600 0.050
Exp.DAP
PIN 1 DOT
BY MARKING
2.000 0.050
.350 0.050
H2
1.200 0.050
1.500
2.000 0.050
Exp.DAP
Ref.
Trace Code
.500 Bsc
.250 0.050
Trace Code to be assigned by assembly SubCon
.85 .05
.152 Ref.
0.000-.050
SIDE VIEW
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
12 of 12
DS110215
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