RFHA1023SR [RFMD]
225W GaN Wideband Pulsed Power Amplifier;
| 型号： | RFHA1023SR |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 225W GaN Wideband Pulsed Power Amplifier 高功率电源 射频 微波 |
| 文件： | 总10页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFHA1023
RFHA1023
225W GaN Wideband Pulsed Power Amplifier
Package: Flanged Ceramic, 2-Pin
The RFHA1023 is a 36V 225W high power discrete amplifier designed
for L-band pulsed radar, air traffic control and surveillance and general
purpose broadband amplifier applications. Using an advanced high
power density gallium nitride (GaN) semiconductor process, these high
performance amplifiers achieve high output power, high efficiency and
flat gain over a broad frequency range in a single package. The
RFHA1023 is a matched power transistor packaged in a hermetic,
flanged ceramic package. The package provides excellent thermal
stability through the use of advanced heat sink and power dissipation
technologies. Ease of integration is accomplished through the
incorporation of single, optimized matching networks that provide
wideband gain and power performance in a single amplifier.
Features
■
Wideband Operation 1.2GHz to
1.4GHz
■
■
■
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse Conditions
.
.
10% to 20% Duty Cycle
100s to 1ms Pulse Width
■
■
Integrated Matching Components
for High Terminal Impedances
36V Operation Typical
Performance
.
.
Pulsed Output Power 225W
Pulse Width 1ms,
Duty Cycle 10%
.
.
.
Small Signal Gain 15dB
High Efficiency 55%
-40°C to 85°C Operating
Temperature
Functional Block Diagram
Applications
■
■
■
Radar
Air Traffic Control and Surveillance
Ordering Information
General Purpose Broadband
Amplifiers
RFHA1023S2
Sample bag with 2 pieces
Bag with 5 pieces
RFHA1023SB
RFHA1023SQ
Bag with 25 pieces
RFHA1023SR
7” Short reel with 50 pieces
13” Reel with 250 pieces
RFHA1023TR13
RFHA1023PCBA-410
Fully assembled evaluation board
1.2GHz to 1.4GHz; 36V operation
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131021
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 10
RFHA1023
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
150
Unit
V
Drain Voltage (VD)
Gate Voltage (VG)
-8 to +2
155
V
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Gate Current (IG)
mA
V
Operational Voltage
40
Ruggedness (VSWR)
Storage Temperature Range
Operating Temperature Range (TC)
Operating Junction Temperature (TJ)
Human Body Model
10:1
-55 to +125
-40 to +85
250
°C
°C
°C
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Class 1A
3.0E + 06
1.4E + 05
MTTF (TJ < 200°C)
Hours
MTTF (TJ < 250°C)
Thermal Resistance, RTH
(junction to case)
TC = 85°C, DC bias only
0.90
0.18
0.34
°C/W
TC = 85°C, 100s pulse, 10% duty cycle
TC = 85°C, 1ms pulse, 10% duty cycle
*MTTF - Median time to failure as determined by the process technology wear-out failure mode. Refer to product qualification report for FIT (random)
failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and
current must not exceed the maximum operating values specified in the table above.
Bias conditions should also satisfy the following expression: PDISS < (TJ - TC) / RTH J-C and TC = TCASE
Nominal Operating Parameters
Specification
Parameter
Unit
Condition
Min
Typ
Max
Recommended Operating
Conditions
Drain Voltage (VDSQ
)
36
-2
V
V
Gate Voltage (VGSQ
Drain Bias Current
)
-8
-3
440
mA
MHz
Frequency of Operation
DC Functional Test
1200
1400
IG (OFF) - Gate Leakage
2
2
mA
mA
V
VG = -8V, VD = 0V
VG = -8V, VD = 50V
VD = 36V, ID = 20mA
VG = 0V, VD = 1.5A
ID (OFF) - Drain Leakage
VGS (TH) - Threshold Voltage
VDS (on) - Drain Voltage at High Current
-3.4
0.22
V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 10
RFHA1023
Specification
Parameter
Unit
Condition
Test Conditions: PW = 1ms, DC = 10%, VDSQ = 36V,
Min
Typ
Max
RF Functional Test
IDQ = 440mA, T = 25ºC, Performance in a standard tuned test
fixture
Small Signal Gain
Power Gain
14
dB
dB
f = 1200MHz, PIN = 30dBm
f = 1200MHz, PIN = 41.2dBm
f = 1200MHz, PIN = 30dBm
f = 1200MHz, PIN = 41.2dBm
f = 1200MHz, PIN = 41.2dBm
f = 1300MHz, PIN = 30dBm
f = 1300MHz, PIN = 41.2dBm
f = 1300MHz, PIN = 30dBm
f = 1300MHz, PIN = 41.2dBm
f = 1300MHz, PIN = 41.2dBm
f = 1400MHz, PIN = 30dBm
f = 1400MHz, PIN = 41.2dBm
f = 1400MHz, PIN = 30dBm
f = 1400MHz, PIN = 41.2dBm
f = 1400MHz, PIN = 41.2dBm
11.8
Input Return Loss
Output Power
-6
-6
-6
dB
53
48
53.25
50
dBm
%
Drain Efficiency
Small Signal Gain
Power Gain
15
dB
12.3
dB
Input Return Loss
Output Power
dB
53
50
53.5
58
dBm
%
Drain Efficiency
Small Signal Gain
Power Gain
14
dB
11.8
dB
Input Return Loss
Output Power
dB
53
55
53.25
63
dBm
%
Drain Efficiency
RF Typical Performance
Test Conditions: PW = 1ms, DC = 10%, VDSQ = 36V,
IDQ = 440mA, T = 25ºC, Performance in a standard tuned test
fixture
Frequency Range
1200
1400
MHz
dB
Small Signal Gain
15
f = 1300MHz, PIN = 30dBm
Power Gain
12.3
dB
f = 1300MHz, POUT = 53.5dBm
Gain Variation with Temperature
-0.015
dB/C°
dBm
W
Output Power (PSAT
)
53.52
225
58
Peak output power
Drain Efficiency
%
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 10
RFHA1023
Typical Performance in Standard Fixed Tuned Test Fixture
(T = 25°C, unless noted)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 10
RFHA1023
Typical Performance (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
5 of 10
RFHA1023
Evaluation Board Schematic
Evaluation Board Bill of Materials (BOM)
Item
Value
10Ω
Manufacturer
Panasonic
Panasonic
Panasonic
Dielectric Labs
ATC
Manufacturer’s P/N
ERJ-8GEYJ100V
ERJ-8GEY0R00
ERJ-8GEYJ510
C11CF151J-9ZN-X0V
ATC800A560JT
ECJ-2VB1H104K
ECJ-2VB1H103K
ECJ-2VB1H104K
ECA-2AM100
R1,R4
R2
0Ω
R3
51Ω
C1, C2, C11, C12
150pF
C17
56pF
C5
0.1µF
Panasonic
Panasonic
Panasonic
Panasonic
ATC
C6, C15
10000pF
0.1µF
C16
C8, C18
10µF
C20
3.3pF
ATC100B3R3BT
ATC100B1R5BT
ATC100B0R3BT
1812SMS-68NJLB
28F0181-1SR-10
35F0121-1SR-10
-
ATC
C21
1.5pF
ATC
C22
0.3pF
L1, L2
68nH
Coilcraft
Steward
Steward
-
L20, L21
115Ω 10A
75Ω, 10A
NOT POPULATED
L22, L23
C3, C4, C7, C12, C14, C19
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
6 of 10
RFHA1023
Package Drawing (all dimensions in millimeters)
Pin Names and Descriptions
Pin
1
Name
Description
Gate - VG RF Input
VG
VD
2
Drain - VD RF Output
Source - Ground Base
3
GND BASE
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
7 of 10
RFHA1023
Bias Instruction for RFHA1023 Evaluation Board
.
.
.
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 36V to VD.
5. Increase VG until drain current reaches desired 440mA or desired bias point.
6. Turn on RF input.
.
.
IMPORTANT NOTE: Depletion mode device, when biasing the device VG must be applied BEFORE VD. When removing bias,
VD must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin
layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is
recommended a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
8 of 10
RFHA1023
Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source (Ω)
12.98 - j8.23
11.75 - j7.16
10.41 - j5.98
Z Load (Ω)
25.48 - j12.4
24.6 - j12.9
23.4 - j13.4
1200
1300
1400
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a
tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
9 of 10
RFHA1023
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These
capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the
value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal
voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts
applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is
removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance
values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the
source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum
limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ
)
shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering
manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on
performance trade-offs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat-sink but
sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the
maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from
ambient to the back of the package including heat-sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS131021
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
10 of 10
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