RFPA0133SR [RFMD]
5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER;
| 型号： | RFPA0133SR |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 5V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER 放大器 功效 射频 微波 功率放大器 |
| 文件： | 总9页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RFPA0133
3 TO 5V PROGRAMMABLE GAIN HIGH
EFFICIENCY POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3mmx3mm
16
15
14
13
Features
NC
1
2
12 G8
0.5W CW Output Power at
3.6V
GND
11 NC
1W CW Output Power at 5V
32dB Small Signal Gain at
900MHz
RF IN 3
NC
10 RF OUT/VCC2
9 RF OUT/VCC2
>60% Efficiency @ P
SAT
Digitally Controlled Output
Power
4
5
6
7
8
380MHz to 960MHz
Frequency Range
High Isolation
Functional Block Diagram
Applications
Product Description
Analog Communication
Systems
The RFPA0133 is a 3V to 5V high efficiency programmable gain amplifier
IC. The device is manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process. The device has been designed
to offer saturated efficiency greater than 60% over a range of frequencies
from 380MHz to 960MHz.
900MHz Spread Spectrum
Systems
400MHz Industrial Radios
Driver Stage for Higher Power
Applications
3V to 5V Applications
High Isolation Buffer
Ordering Information
RFPA0133SQ
RFPA0133SR
RFPA0133TR7
Sample Bag with 25 Pieces
7” Reel with 100 Pieces
7” Reel with 2500 Pieces
RFPA0133PCK-410 860MHz to 930MHz PCBA with 5-piece Sample Bag
RFPA0133PCK-411 430MHz to 470 MHz PCBA with 5-piece Sample Bag
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120206
1 of 9
RFPA0133
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Supply Voltage
Rating
-0.5 to +5.25
-0.5 to +3.3
-0.5 to +3.3
Unit
V
DC
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Power Down Voltage (V
)
V
PD
V
V
BIAS
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
DC Supply Current
Input RF Power
500
+10
mA
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
dBm
Output Load VSWR (See Note)
Ambient Operating Temperature
Storage Temperature
6:1
-40 to +85
-40 to +150
°C
°C
Note: Due to high efficiency of this PA, the maximum ICC should always be
less than 400mA. Only under short term poor VSWR conditions is 500mA
acceptable.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
T=25 °C, V =3.6V, V =V =3.0V,
BIAS
CC
PD
Overall
P
V
V
P
=0dBm, Freq=915MHz
IN
CW Output Power
CW Output Power
Small Signal Gain
27.5
30
dBm
dBm
dB
=3.6V
=5V
CC
CC
32
=-10dBm
IN
Second Harmonic
Third Harmonic
CW Efficiency
23
45
63
dBc
dBc
%
Without external second harmonic trap
55
0
G16=“high”, G8=“high”, P =0dBm
IN
Power Down “ON”
Power Down “OFF”
VPD Input Current
G16, G8 “ON”
3.0
0.5
6
V
V
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
0.8
mA
V
1.7
0
3.0
0.7
Voltage supplied to the input
Voltage supplied to the input
Only in “ON” state
G16, G8 “OFF”
V
G16, G8 Input Current
Output Power
1.0
mA
dBm
26.5
21
14
3
27.5
29
25
18
8
G16=“high”, G8=“high”, P =0dBm
IN
23
16
5
dBm
dBm
dBm
ns
G16=“high”, G8=“low”, P =0dBm
IN
G16=“low”, G8=“high”, P =0dBm
IN
G16=“low”, G8=“low”, P =0dBm
IN
Turn On/Off Time
Power Supply
200
Power Supply Voltage
Power Supply Current
3.6
V
Specifications
230
mA
G16=“high”, G8=“high”, P =0dBm
IN
150
65
mA
mA
mA
G16=“high”, G8=“low”, P =0dBm
IN
G16=“low”, G8=“high”, P =0dBm
IN
35
G16=“low”, G8=“low”, P =0dBm
IN
Idle Current
40
75
60
110
200
mA
nA
G16=“high”, G8=“high”, No RF In
G16=“low”, G8=“low”, PD=“low”. No RF IN.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 9
DS120206
RFPA0133
POUT versus PIN
860MHzto 930MHz at 3.6V and +25°C.
EfficiencyversusPOUT
860MHzto 930MHz at 3.6V and +25°C
70
65
60
55
50
45
40
35
30
25
20
15
28
26
24
22
20
18
Output
Power
(dBm)
Efficiency
(%)
RFPA0133_860MHz
RFPA0133_860MHz
RFPA0133_900MHz
RFPA0133_930MHz
RFPA0133_900MHz
RFPA0133_930MHz
-15
-13
-11
-9
-7
-5
-3
-1
1
3
5
20
21
22
23
24
25
26
27
28
29
Output Power (dBm)
Input Power (dBm)
POUT versus PIN
EfficiencyversusPOUT
900MHzat 3.6V; -40°C to +85°C
900MHzat 3.6V; -40°C to +85°C
29
28
27
26
25
24
23
22
21
20
19
18
17
16
70
65
60
55
50
45
40
35
30
25
20
15
Output
Power
(dBm)
Efficiency
(%)
RFPA0133_-40C
RFPA0133_+25C
RFPA0133_+85C
RFPA0133_-40C
EFPA0133_+25C
RFPA0133_+85C
-15 -14-13-12-11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1
Input Power (dBm)
0
1
2
3
4
5
20
21
22
23
24
25
26
27
28
29
Output Power (dBm)
PSAT versus VCC
900 MHz PIN=0 dBm
SaturatedEfficiencyversusVCC
900 MHz PIN=0 dBm
31
30
29
28
27
26
25
24
66
65
64
63
62
61
60
Efficiency
(%)
POUT (dBm)
2.5
3.0
3.5
4.0
4.5
5.0
2.5
3.0
3.5
4.0
4.5
5.0
VCC
VCC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120206
3 of 9
RFPA0133
Thermal Resistance versus Output Power
Thermal Resistance versus Current
150
140
130
120
110
100
90
140
130
120
110
100
90
3.6V
5.0V
80
70
60
80
50
70
40
3.6V
5.0V
30
60
20
50
10
0
40
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Power (dBm)
75
100
125
150
175
200
225
250
275
300
325
350
Current (mA)
Maximum Die Temperature versus
Output Power
160
150
140
130
120
110
100
90
3V
5V
80
0
5
10
15
20
25
30
Output Power (dBm)
NOTE: Thermal resistance and die temperature are measured at a PCB temperature of 85C on a standard 900MHz evalua-
tion board.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 9
DS120206
RFPA0133
Pin
1,4,5,
7,8,
Function
NC
Description
These pins may be left unconnected or soldered to ground.
11, 15
Ground connection. Keep traces physically short and connect immediately to the ground plane for best perfor-
mance.
2
GND
RF IN
VPD
Amplifier RF input. The amplifier does not contain internal DC blocking and, therefore, should be externally DC
blocked before connecting to any device which has DC present or which contains a DC path to ground.
3
6
Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum
DC power. When this pin is at 3V the device will be in full power mode delivering maximum gain and output
power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an
external UHF and HF bypassing capacitor. Typically V
=V =3.0V.
BIAS
PD
Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. Bias for the final
power amplifier output transistor must also be provided through one of these pins. Pins 9 and 10 should be
used for the RF output with a matching network that presents the optimum load impedance to the PA for maxi-
mum power and efficiency, as well as providing DC blocking at the output.
9,10
RF
OUT/VCC2
RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should
never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing
capacitor. See note.
12
13
G8
RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should
never exceed 3.3V and a logic high should be at least 1.7V. This pin should also have an external UHF bypassing
capacitor. See note.
G16
Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output.
14
16
VCC1
VBIAS
Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as
possible to the package. Typically, V
=V =3.0V.
BIAS
PD
Note: The 8dB and 16dB gain steps are approximate for small signal operation. As the device compresses, the values of the
gain steps compress as well. The output power table on page two shows the effect of the gain steps for saturated (0dBm input)
operation.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120206
5 of 9
RFPA0133
Evaluation Board Schematic
860MHz to 930MHz
R2
(See Table Below)
VCC1
C13
2.2 F
VBIAS
G16
C14
C5
2.2 F
100 pF
L4
R1
C4
100 pF
2.7 nH
DNP
Toko
C7
100 pF
16
15
14
13
C8
100 pF
1
2
3
4
12
11
10
9
G8
L1
C1
100 pF
4.7 nH
Toko
L3
3.3 nH
Coilcraft
RF IN
C2
100 pF
C15
DNP
RF OUT
L2
10 nH
C10
5.6 pF
Johanson
C6
DNP
C16
DNP
5
6
7
8
Coilcraft 0603
All components are 0402
unless specified otherwise.
C11
100 pF
VCC1/VCC2 (Volts)
R2 ()
5.0
4.5
30
20
10
3.9
C3
100 pF
C12
DNP
4.0
<3.6
C9
2.2 F
RFPA0133410(B)
865 – 930 MHz
C17
2.2 F
Note: R2 values are approximate.
The resistor values may be
changed by ±1 standard value for
convenience.
VPD
RF OUT/VCC2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 9
DS120206
RFPA0133
Evaluation Board Schematic
430MHz to 470MHz
R2
(See Table Below)
VCC1
C13
2.2 F
VBIAS
G16
C14
C5
2.2 F
33 pF
L4
R1
C4
100 pF
10 nH
DNP
Toko
C7
100 pF
16
15
14
13
C8
100 pF
1
2
3
4
12
11
10
9
G8
L1
C1
100 pF
18 nH
Toko
L3
10.4 nH
Coilcraft 0604
RF IN
C2
100 pF
C15
220
RF OUT
L2
C10
9.1 pF
Johanson
C6
DNP
C16
DNP
5
6
7
8
18 nH
Coilcraft 0603
VCC1/VCC2 (Volts) R2 ()
C11
100 pF
5.0
4.5
30
20
10
3.9
C3
100 pF
4.0
C12
DNP
<3.6
Note: R2 values are approximate.
The resistor values may be
changed by ±1 standard value for
convenience.
C9
2.2 F
RFPA0133
430 MHz
C17
2.2 F
VPD
RF OUT/VCC2
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120206
7 of 9
RFPA0133
Evaluation Board Layout
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
8 of 9
DS120206
RFPA0133
Package Drawing
Branding Diagram
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120206
9 of 9
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