SBB3000 [RFMD]

50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK;


型号：	SBB3000
厂家：	RF MICRO DEVICES
描述：	50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK
文件：	总5页 (文件大小：352K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SBB3000

50MHz to

6000MHz

InGaP HBT

Active Bias

Gain Block

SBB3000

50MHz to 6000MHz InGaP HBT ACTIVE BIAS

GAIN BLOCK

Package: Bare Die

Product Description

Features

RFMD’s SBB3000 is a high performance InGaP HBT MMIC amplifier utiliz-

ing a Darlington configuration with an active bias network. The active bias

network provides stable current over temperature and process Beta varia-

tions. The SBB3000 product is designed for high linearity 5V gain block

applications that require excellent gain flatness, small size, and minimal

external components. It is internally matched to 50.



Single Fixed 5V Supply



Patented Self Bias Circuit and

Thermal Design



Gain = 16.4dB at 1950MHz

P1dB = 15.2dBm at

1950MHz



OIP3 = 29.5dBm at 1950MHz

Gain and Return Loss V_S= 5V, I_S= 42mA

Optimum Technology

Matching® Applied

Robust 1000V ESD, Class 1C

HBM

S21

GaAs HBT

GaAs MESFET

Applications

InGaP HBT



Bias Tee Data, Z_S= Z_L= 50 Ohms, T_L= 25C

SiGe BiCMOS



PA Driver Amplifier

Si BiCMOS



RF Pre-Driver and RF Receiver

Path

-10

-20

-30

SiGe HBT

GaAs pHEMT

Si CMOS

S11



Military Communications

Test and Instrumentation

S22



Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

Frequency (GHz)

Specification

Typ.

Parameter

Unit

Condition

Min.

Max.

Small Signal Gain

16.6

16.4

16.3

15.6

15.2

15.4

30.0

29.5

dBm

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

Output Power at 1dB Compression

Output Third Order Intercept Point

Input Return Loss

Output Return Loss

Noise Figure

25.5

3.9

Device Operating Voltage

4.2

= 20, V = 5.0V

Device Operating Current

Operational Current Range

Thermal Resistance

= 20, V = 5.0V

Per user preference via R

°C/W

Junction to lead (89 package)

per tone = -5dBm

Test Conditions: V = 4.2V, I = 42mA, T = 25°C, OIP Tone Spacing = 1MHz, R = 20, Bias Tee Data, Z = Z = 50, P

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS120719

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SBB3000

Absolute Maximum Ratings

Parameter

Caution! ESD sensitive device.

Rating

100

Unit

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

Max Device Current (l )

Max Device Voltage (V )

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Max RF Input Power* (See Note)

+20

dBm

°C

Max Junction Temperature (T )

+150

Operating Temperature Range (T )

-40 to +85

°C

Max Storage Temperature

+150

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

ESD Rating - Human Body Model

(HBM)

Class 1C

*Note: Load condition Z = 50

Operation of this device beyond any one of these limits may cause permanent

damage. For reliable continuous operation, the device voltage and current

must not exceed the maximum operating values specified in the table on

page one.

Bias Conditions should also satisfy the following expression:

I V < (T - T )/R , j - l and T = T

LEAD

SBB3089Z Typical RF Performance at Key Operating Frequencies (Bias Tee Data)

Parameter

Unit

100

MHz

16.9

29.5

15.6

24.0

21.5

19.5

3.7

500

MHz

16.6

30.5

16.0

26.5

26.0

19.0

3.9

850

MHz

16.6

30.0

15.6

24.5

26.0

19.5

3.9

1950

MHz

16.4

29.5

15.2

21.0

25.5

19.5

3.9

2140

MHz

16.4

29.0

15.0

20.5

25.5

19.5

3.9

2400

MHz

16.3

29.5

15.4

20.0

27.5

3500

MHz

16.1

27.0

Small Signal Gain

Output Third Order Intercept Point

Output Power at 1dB Compression

Input Return Loss

dBm

15.2

15.5

21.0

19.5

3.8

Output Return Loss

Reverse Isolation

19.5

4.0

Noise Figure

Test Conditions: V = 4.2V, I = 42mA, OIP3 Tone Spacing = 1MHz, P

per tone = -5dBm, R = 20, T = 25°C, Z = Z = 50

DC L S L

OUT

SBB3089Z Typical Performance with Bias Tees, V_D= 5V with R_DC= 20, I_D= 42mA

OIP3 versus Frequency,

P1dB versus Frequency

(-5dBm/tone, 1MHz spacing)

34.0

32.0

30.0

28.0

26.0

24.0

20.0

18.0

16.0

14.0

12.0

10.0

25°C

-40°C

85°C

25°C

-40°C

85°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Frequency (GHz)

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

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SBB3000

SBB3089Z Typical Performance with Bias Tees, V_S= 5V, R_DC= 20, I_D= 42mA

S11 versus Frequency

S21 versus Frequency

0.0

-5.0

20.0

18.0

16.0

14.0

12.0

10.0

-10.0

-15.0

-20.0

-25.0

-30.0

25C

-40C

85C

25C

-40C

85C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

3.5

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Frequency (GHz)

S22 versus Frequency

S12 versus Frequency

0.0

-5.0

0.0

-5.0

-10.0

-15.0

-20.0

-25.0

-30.0

-10.0

-15.0

-20.0

-25.0

-30.0

25C

-40C

85C

25C

-40C

85C

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.0

1.0

2.0

3.0

4.0

5.0

Frequency (GHz)

DCIV

NF versus Frequency

100.0

90.0

80.0

70.0

60.0

50.0

40.0

30.0

20.0

10.0

0.0

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

-40°C

25°C

85°C

25°C

85°C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS120719

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SBB3000

Application Schematic

Application Circuit Element Values

Reference Designator 500MHz to 3500MHz

1000pF

68pF

48nH 0805HQ Coilcraft

Recommended Bias Resistor Values for I_D= 42mA, R_DC= (V_S- V_D)/I_D

Supply Voltage (V )

10V

12V

20

43

91

139

187

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

4 of 5

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SBB3000

Pin Names and Descriptions

Name

RF IN

Description

RF input. An external DC blocking capacitor chosen for the frequency of operation is required.

Die backside must be connected to RF/DC ground using silver filled conductive epoxy.

DIE

BACKSIDE

RF OUT/

DC BIAS

RF output and DC bias input. An external DC blocking capacitor chosen for the frequency of operation is

required.

Die Dimensions

0.021

[0.52]

0.023

[0.59]

RFꢀIN

RFꢀOUT

DCꢀBiasꢀIn

Notes:

1. All dimensions in inches [millimeters]

2. Die thickness: 0.004 [0.10]

3. Typical bond pad size is 0.003 x 0.007

4. Backside metallization: Gold

5. Bond pad metallization: Gold

6. Backside is ground

Ordering Information

Part Number

SBB3000

Description

Container

Gel Pack

Quantity

Bare Die

SBB3000S2

Bare Die

Gel Pack

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS120719

5 of 5

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