RT8511B [RICHTEK]
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| 型号： | RT8511B |
| 厂家： | 
RICHTEK TECHNOLOGY CORPORATION |
| 描述： | 暂无描述 |
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®
RT8511B
43V Asynchronous Boost WLED Driver
General Description
Features
Wide Input Voltage Range : 2.7V to 24V
High Output Voltage : up to 43V
Direct PWM Dimming Control and Frequency from
100Hz to 8kHz
The RT8511B is an LED driver IC that can support up to
10 WLED in series. It is composed of a current mode
boost converter integrated with a 43V/2.2A power switch
running at a fixed 500kHz frequency and covering a wide
VIN range from 2.7V to 24V.
Internal Soft-Start and Compensation
200mV Reference Voltage
The white LEDcurrent is set with an external resistor, and
the feedback voltage is regulated to 200mV (typ.). During
operation, the LEDcurrent can be controlled by the PWM
input signal in which the duty cycle determines the
feedback reference voltage.
PWM Dimming with Internal Filter
Programmable Over Voltage Protection
Over Temperature Protection
Current Limit Protection
Thin 8-Lead WDFN Package
For brightness dimming, the RT8511B is able to maintain
steady control of the LED current. Therefore, no audible
noises are generated on the output capacitor. The RT8511B
also has programmable over voltage pin to prevent the
output from exceeding absolute maximum ratings during
open LED conditions. The RT8511B is available in
WDFN-8L 2x2 package.
RoHS Compliant and Halogen Free
Applications
UMPC andNotebook Computer Backlight
GPS, Portable DVD Backlight
Pin Configurations
Ordering Information
RT8511B
(TOP VIEW)
Package Type
QW : WDFN-8L 2x2 (W-Type)
1
2
3
4
8
7
6
5
OVP
FB
DIMC
GND
EN
PWM
VIN
LX
Lead Plating System
G : Green (Halogen Free and Pb Free)
9
Note :
WDFN-8L 2x2
Richtek products are :
RoHS compliant and compatible with the current require-
ments of IPC/JEDEC J-STD-020.
Suitable for use in SnPb or Pb-free soldering processes.
Marking Information
0F : Product Code
W : Date Code
0FW
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8511B-05 February 2015
www.richtek.com
1
RT8511B
Typical Application Circuit
V
OUT
L
D
10µH
V
IN
4.2V to 24V
RT8511B
R2
3.3M
6
8
:
:
:
:
5
1
:
:
:
:
:
VIN
EN
LX
:
:
:
WLEDs
C
IN
C
OUT
1µF x 2
OVP
1µF x 2
Chip Enable
R1
100k
2
FB
7
3
PWM
100Hz to 8kHz
PWM
DIMC
R
SET
4, 9 (Exposed Pad)
GND
3.3
C
DIMC
1µF
Figure 1. TypicalApplication Circuit ofNormal Operation
V
OUT
L
D
10µH
V
LED
2.7V to 24V
C
LED
1µF x 2
RT8511B
R2
3.3M
:
:
:
:
5
1
:
:
:
:
:
:
:
:
LX
6
8
V
IN
WLEDs
VIN
EN
2.7V to 4.2V
C
C
OUT
1µF x 2
IN
1µF
OVP
Chip Enable
R1
100k
2
FB
7
3
PWM
100Hz to 8kHz
PWM
DIMC
R
SET
4, 9 (Exposed Pad)
GND
3.3
C
DIMC
1µF
Figure 2. Typical Application Circuit of Low Voltage Operation
Functional Pin Description
Pin No.
Pin Name
OVP
FB
Pin Function
1
2
3
4
5
6
7
8
Over Voltage Protection for Boost Converter. The detecting threshold is 1.2V.
Feedback. Connect a resistor between this pin and GND to set the LED current.
PWM Filter. Filter the PWM signal to a DC voltage.
Ground.
DIMC
GND
LX
Switch Node for Boost Converter.
VIN
Power Supply Input.
PWM
EN
Dimming Control Input.
Chip Enable (Active High) for Boost Converter.
The exposed pad must be soldered to a large PCB and connected to AGND for
maximum power dissipation.
9 (Exposed Pad) GND
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
2
DS8511B-05 February 2015
RT8511B
Function Block Diagram
OVP
LX
+
-
VIN
EN
1.2V
OTP
OCP
OSC
S
R
Q
Q
-
PWM
Controller
+
PWM
DIMC
D/A
Dimming
+
GND
-
FB
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8511B-05 February 2015
www.richtek.com
3
RT8511B
Absolute Maximum Ratings (Note 1)
VIN, EN, PWM, DIMC to GND------------------------------------------------------------------------------------------ −0.3V to 26.5V
FB, OVP to GND ---------------------------------------------------------------------------------------------------------- −0.3V to 48V
LX toGND ------------------------------------------------------------------------------------------------------------------ −0.3V to 48V
< 500ns ---------------------------------------------------------------------------------------------------------------------- −1V to 48V
Power Dissipation, PD @ TA = 25°C
WDFN-8L 2x2 -------------------------------------------------------------------------------------------------------------- 0.833W
Package Thermal Resistance (Note 2)
WDFN-8L 2x2, θJA --------------------------------------------------------------------------------------------------------- 120°C/W
WDFN-8L 2x2, θJC --------------------------------------------------------------------------------------------------------- 8.2°C/W
Lead Temperature (Soldering, 10 sec.)------------------------------------------------------------------------------- 260°C
Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C
Storage Temperature Range -------------------------------------------------------------------------------------------- –65°C to 150°C
ESD Susceptibility (Note 3)
HBM (Human Body Model)---------------------------------------------------------------------------------------------- 2kV
MM (Machine Model) ----------------------------------------------------------------------------------------------------- 200V
Recommended Operating Conditions (Note 4)
Supply Input Voltage, VIN ------------------------------------------------------------------------------------------------ 2.7V to 24V
Junction Temperature Range-------------------------------------------------------------------------------------------- −40°C to 125°C
Ambient Temperature Range-------------------------------------------------------------------------------------------- −40°C to 85°C
Electrical Characteristics
(VIN = 4.5V, TA = 25°C, unless otherwise specified)
Parameter
Symbol
IQ
IQ_SW
ISHDN
Test Conditions
VFB = 1.5V, No Switching
VFB = 0V, Switching
Min
--
Typ
725
--
Max
--
Unit
A
VIN Quiescent Current
--
2.2
4
mA
A
VIN Shutdown Current
VIN = 4.5V, VEN = 0V
--
1
Control Input
Logic-High VIH
VIN = 2.7V to 24V
VIN = 2.7V to 24V
VEN = 3V
1.6
--
--
--
--
0.8
10
80
8
EN, PWM
Threshold Voltage
V
Logic-Low VIL
EN Sink Current
IIH
1
--
A
ms
Shutdown Delay
tSHDN
EN high to low
52
0.1
64
--
PWM Dimming Frequency
Boost Converter
kHz
Switching Frequency
fOSC
VIN = 2.7V to 24V
VIN > 5V
0.4
--
0.5
0.4
0.6
0.6
MHz
LX On Resistance
(N-MOSFET)
RDS(ON)
Minimum ON Time
--
--
60
92
--
--
ns
%
Maximum Duty Cycle
DMAX
VFB = 0V, Switching
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
4
DS8511B-05 February 2015
RT8511B
Parameter
LED Current
Symbol
Test Conditions
Min
Typ
Max
Unit
Minimum PWM Dimming Duty
Cycle
DMIN
Dimming Freq. = 100Hz to 8kHz
1
--
--
%
Feedback Voltage
Fault Protection
LX Current Limit
VFB
195
200
205
mV
ILIM
1.66
1.14
2.2
1.2
2.74
1.26
A
V
Over Voltage Protection
Threshold
VOVP
Thermal Shutdown
Temperature
TSD
--
--
160
30
--
--
°C
°C
Thermal Shutdown Hysteresis TSD
Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8511B-05 February 2015
www.richtek.com
5
RT8511B
Typical Operating Characteristics
FB Reference Voltage vs. Input Voltage
Efficiency vs. Input Voltage
100
199.5
199.2
198.9
198.6
198.3
198.0
95
90
85
80
75
70
65
VOUT = 29.5V
19 22 24
60
4
8
12
16
20
24
4
7
9
12
14
17
Input Voltage (V)
Input Voltage (V)
FB Reference Voltage vs. Temperature
Frequency vs. Input Voltage
200
198
196
194
192
190
600
550
500
450
400
350
VIN = 4.5V
-20
5
30
55
80
105
4
8
12
16
20
24
Temperature (°C)
Input Voltage (V)
Current Limit vs. Input Voltage
LED Current vs. PWM Duty Cycle
60
50
40
30
20
10
0
3.0
2.6
2.2
1.8
1.4
1.0
PWM= 100Hz
PWM= 2kHz
PWM= 8kHz
0
10 20 30 40 50 60 70 80 90 100
PWM Duty Cycle (%)
2.5 5.25
8
10.75 13.5 16.25 19 21.75 24.5
Input Voltage (V)
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
6
DS8511B-05 February 2015
RT8511B
Application Information
The RT8511B is a current mode boost converter which
operates at a fixed frequency of 500kHz. It is capable of
driving up to 10 white LEDs in series and integrates
functions such as soft-start, compensation, and internal
analog dimming control. The protection block also provides
over-voltage, over-temperature, and current- limit protection
features.
Because the voltage ofDIMC and FB is small to 2mV and
easily affected by LX switching noise.
200mV
DIMC
PWM
R
+
To
Controller
EA
-
C
DIMC
1µF
FB
LED Current Setting
Figure 3. Block Diagram of Programmable FB Voltage
The loop structure of the boost converter keeps the FB
pin voltage equal to the reference voltage VFB. Therefore,
by connecting the resistor, RSET between the FB pin and
GND, the LED current will be determined by the current
through RSET. The LED current can be calculated by the
following equation :
Table 1. Minimum Duty for Dimming Frequency
Dimming Frequency
Minimum Duty Cycle
100Hz to 8kHz
1%
The FB pin voltage will be decreased by lower PWM duty
ratio . That will achieve LED current diming function for
different brightness. But LED current is more accurate
when higher PWM duty. The Table 2. shows typical
variation value comparison between different PWM duty
V
FB
I
=
LED
R
SET
Brightness Control
For the brightness dimming control of the RT8511B, the
IC provides typically 200mV reference voltage when the
PWM pin is constantly pulled high. However, the PWM
pin allows a PWM signal to adjust the reference voltage
by changing the PWM duty cycle to achieve LED
brightness dimming control. The relationship between the
duty cycle and the FB voltage can be calculated according
to the following equation :
and condition is VIN = 3.7V, LED array = 6S2P, RSET
=
5Ω.
Table 2. LED Current Variation vs PWM Duty
PWM Duty Variation PWM Duty Variation
(%)
(%)
(%)
(%)
1
2
3
4
5
6
7
±60
±25
±17
±13
±10
±9
8
9
±7
±6
VFB = 200mV x Duty
10
20
50
100
±5
where 200mV is the typical internal reference voltage and
Duty is the duty cycle of the PWM signal.
±4
±3
As shown in Figure 3, the duty cycle of the PWM signal
is used to modify the internal 200mV reference voltage.
With an on-chip output clamping amplifier and a serial
resistor, the PWM dimming signal is easily low-pass
filtered to an analog dimming signal with one external
capacitor, CDIMC, for noise-free PWM dimming. Dimming
frequency can be sufficiently adjusted from 100Hz to 8kHz.
However, the LEDcurrent cannot be 100% proportional to
the duty cycle. Referring to Table 1, the minimum dimming
duty can be as low as 1% for the frequency range from
100Hz to 8kHz. It should be noted that the accuracy of
1% duty is not guaranteed.
±2.5
±8
It also should be noted that when the input voltage is too
close to the output voltage [(VOUT −VIN) < 6V] , excessive
audible noise may occur. Additionally, for accurate
brightness dimming control, the input voltage should be
kept lower than the LEDs' turn on voltage. When operating
in the light load, excessive output ripple may occur.
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8511B-05 February 2015
www.richtek.com
7
RT8511B
Soft-Start
MOSFET will be turned off. In the off period, the inductor
current will descend. The internal MOSFET is turned on
by the oscillator during the beginning of the next cycle.
The RT8511B provides a built-in soft-start function to limit
the inrush current, while allowing for an increased PWM
frequency for dimming.
Power Sequence
Current Limiting Protection
In order to assure that the normal soft-start function is in
place for suppressing the inrush current, the input voltage
and enable voltage should be ready before PWM pulls
high. Figure 4 and Figure 5 show the power on and power
off sequences.
The RT8511B can limit the peak current to achieve over
current protection. The IC senses the inductor current
through the LX pin in the charging period. When the value
exceeds the current limiting threshold, the internal N-
V
IN
V
IN
EN
EN
PWM
PWM
V
OUT
soft-start
V
OUT
Mode1
Mode1
V
IN
V
IN
EN
EN
PWM
V
OUT
soft-start
V
OUT
Mode2
Mode2
V
IN
V
IN
EN
PWM
EN
PWM
V
OUT
soft-start
Shutdown
Delay
V
OUT
Mode3
Figure 4. Power On Sequence
Mode3
Figure 5. Power Off Sequence
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
8
DS8511B-05 February 2015
RT8511B
Over Voltage Protection
where fOSC is the switching frequency. For better efficiency,
it is suggested to choose an inductor with small series
resistance.
The RT8511B equips Over Voltage Protection (OVP)
function. When the voltage at the OVP pin reaches a
threshold of approximately 1.2V, the MOSFET drive output
will turn off. The MOSFET drive output will turn on again
once the voltage at the OVP pin drops below the threshold.
Thus, the output voltage can be clamped at a certain
voltage level, as shown in the following equation :
Diode Selection
The Schottky diode is a good choice for an asynchronous
boost converter due to its small forward voltage. However,
when selecting a Schottky diode, important parameters
such as power dissipation, reverse voltage rating, and
pulsating peak current must all be taken into
consideration.Asuitable Schottky diode's reverse voltage
rating must be greater than the maximum output voltage,
and its average current rating must exceed the average
output current.
R2
R1
VOUT, OVP = VOVP 1+
where R1 and R2 make up the voltage divider connected
to the OVP pin.
Over Temperature Protection
The RT8511B has an Over Temperature Protection (OTP)
function to prevent overheating caused by excessive power
dissipation from overheating the device. The OTP will shut
down switching operation if the junction temperature
exceeds 160°C. The boost converter will start switching
again when the junction temperature is cooled down by
approximately 30°C.
Capacitor Selection
Two 1μF ceramic input capacitors and two 1μF ceramic
output capacitors are recommended for driving 10 WLEDs
in series. For better voltage filtering, ceramic capacitors
with low ESR are recommended. Note that the X5R and
X7R types are suitable because of their wide voltage and
temperature ranges.
Inductor Selection
The inductance depends on the maximum input current.
As a general rule, the inductor ripple current range is 20%
to 40% of the maximum input current. If 40% is selected
as an example, the inductor ripple current can be
Thermal Considerations
For continuous operation, do not exceed absolute
maximum junction temperature. The maximum power
dissipation depends on the thermal resistance of the IC
package, PCB layout, rate of surrounding airflow, and
difference between junction and ambient temperature. The
maximum power dissipation can be calculated by the
following formula :
calculated according to the following equation :
VOUT IOUT
I
=
IN(MAX)
(MIN) V
IN(MIN)
IRIPPLE = 0.4I
IN(MAX)
where η is the efficiency of the boost converter, IIN(MAX) is
the maximum input current, IOUT is the total current from
all LED strings, and IRIPPLE is the inductor ripple current.
The input peak current can be calculated by maximum
input current plus half of inductor ripple current shown as
following equation :
PD(MAX) = (TJ(MAX) − TA) / θJA
where TJ(MAX) is the maximum junction temperature, TAis
the ambient temperature, and θJA is the junction to ambient
thermal resistance.
For recommended operating condition specifications, the
maximum junction temperature is 125°C. The junction to
ambient thermal resistance, θJA, is layout dependent. For
WDFN-8L 2x2 package, the thermal resistance, θJA, is
120°C/W on a standard JEDEC 51-7 four-layer thermal
test board. The maximum power dissipation at TA = 25°C
can be calculated by the following formulas :
IPEAK = 1.2 x IIN(MAX)
Note that the saturated current of the inductor must be
greater than IPEAK. The inductance can eventually be
determined according to the following equation :
2
V
(V
V )
IN
OUT
IN
L =
2
0.4 V
I
f
OUT
OUT OSC
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
DS8511B-05 February 2015
www.richtek.com
9
RT8511B
PD(MAX) = (125°C − 25°C) / (120°C/W) = 0.833W for
Layout Consideration
WDFN-8L 2X2 package
For high frequency switching power supplies, the PCB
layout is important to obtain good regulation, high
efficiency and stability. The following descriptions are the
suggestions for better PCB layout.
The maximum power dissipation depends on operating
ambient temperature for fixed TJ(MAX) and thermal
resistance, θJA. The derating curves in Figure 6 allow the
designer to see the effect of rising ambient temperature
on the maximum power dissipation.
Input and output capacitors should be placed close to
the IC and connected to the ground plane to reduce
noise coupling.
1.0
Four-Layer PCB
The GND and Exposed Pad should be connected to a
0.8
0.6
0.4
0.2
0.0
strong ground plane for heat sinking and noise protection.
The components L, D, CIN and COUT must be placed as
close as possible to reduce current loop. Keep the main
current traces as possible as short and wide.
The LX node of theDC/DC converter experiences is with
high frequency voltage swings. It should be kept in a
small area.
The component RSET should be placed as close as
0
25
50
75
100
125
possible to the IC and kept away from noisy devices.
Ambient Temperature (°C)
Figure 6.Derating Curve of Maximum PowerDissipation
Locate R
close
SET
to FB as possible
R2
R1
8
1
2
3
4
OVP
EN
R
SET
7
FB
DIMC
GND
PWM
VIN
LX
The inductor should be placed
as close as possible to the
switch pin to minimize the noise
coupling into other circuits.
LX node copper area should be
minimized for reducing EMI
6
5
:
:
:
:
:
:
:
:
:
:
:
:
9
C
DIMC
WLEDs
D
L
V
IN
C
OUT
C
IN
V
OUT
The C
should be connected
OUT
C
should be placed as
IN
directly from the output schottky
diode to ground rather than
across the WLEDs.
closed as possible to VIN
pin for good filtering.
Figure 7. PCB Layout Guide
Copyright 2015 Richtek Technology Corporation. All rights reserved.
©
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
10
DS8511B-05 February 2015
RT8511B
Outline Dimension
D2
D
L
E
E2
SEE DETAIL A
1
e
b
2
1
2
1
A
A3
DETAILA
Pin #1 ID and Tie Bar Mark Options
A1
Note : The configuration of the Pin #1 identifier is optional,
but must be located within the zone indicated.
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
A
A1
A3
b
0.700
0.000
0.175
0.200
1.950
1.000
1.950
0.400
0.800
0.050
0.250
0.300
2.050
1.250
2.050
0.650
0.028
0.000
0.007
0.008
0.077
0.039
0.077
0.016
0.031
0.002
0.010
0.012
0.081
0.049
0.081
0.026
D
D2
E
E2
e
0.500
0.020
L
0.300
0.400
0.012
0.016
W-Type 8L DFN 2x2 Package
Richtek Technology Corporation
14F, No. 8, Tai Yuen 1st Street, Chupei City
Hsinchu, Taiwan, R.O.C.
Tel: (8863)5526789
Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should
obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot
assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be
accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.
DS8511B-05 February 2015
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11
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