R1126N191D-TR-F [RICOH]
Regulator;
| 型号： | R1126N191D-TR-F |
| 厂家： | 
RICOH ELECTRONICS DEVICES DIVISION |
| 描述： | Regulator |
| 文件： | 总23页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R1126N SERIES
LOW NOISE 150mA LDO REGULATOR
NO. EA-130-0512
OUTLINE
The R1126N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply
current, low on Resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an
error amplifier, resistor-net for voltage setting, a short current limit circuit, a chip enable circuit, and so on.
These ICs perform with low dropout voltage and the chip-enable function. The supply current at no load of this
IC is only 10µA, and the line transient response and the load transient response of the R1126N Series are
excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment.
The supply current at no load of R1126x Series is remarkably reduced compared with R1114x Series. The
mode change signal to reduce the supply current is not necessary. The output voltage accuracy is also improved.
(±1.5%)
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
therefore high density mounting of the ICs on boards is possible.
R1116N Series that a pin configuration differs from R1126N Series are available.
FEATURES
• Low Supply Current ............................................................. Typ. 10µA
• Standby Current................................................................... Typ. 0.1µA
•
Input Voltage Range ............................................................ 1.8V to 6.0V
Output Voltage Range.......................................................... 1.5V to 4.0V
•
• Low Dropout Voltage............................................................ Typ. 0.29V (IOUT=150mA,VOUT=2.8V)
• High Ripple Rejection .......................................................... Typ. 70dB (f=1kHz, VOUT=3.0V)
Typ. 53dB (f=10kHz)
<
• High Output Voltage Accuracy .............................................±1.5% (1.5V
VOUT
3.0V), ±2.0% (VOUT>3.0V)
=
=
• Low Temperature-Drift Coefficient of Output Voltage........... Typ. ±100ppm/°C
• Excellent Line Regulation .................................................... Typ. 0.02%/V
•
Small Packages ................................................................. SOT-23-5
• Built-in Fold Back Protection Circuit .................................... Typ. 40mA (Current at short mode)
Ceramic capacitors are recommended to be used with this IC ... CIN=COUT=1.0µF (Ceramic)
•
APPLICATIONS
• Power source for portable communication equipment.
• Power source for portable music player.
• Power source for electrical appliances such as cameras, VCRs and camcorders.
• Power source for battery-powered equipment.
1
R1126N
BLOCK DIAGRAMS
R1126Nxx1B
R1126Nxx1D
DD
V
DD
V
OUT
V
OUT
V
Vref
Current Limit
Vref
Current Limit
CE
CE
GND
GND
SELECTION GUIDE
The output voltage, version, and the taping type for the ICs can be selected at the user’s request.
The selection can be made with designating the part number as shown below;
R1126Nxx1x-xx ←Part Number
↑ ↑ ↑ ↑
a b c d
Code
Contents
Designation of Package Type:
N: SOT-23-5
a
Setting Output Voltage (VOUT):
Stepwise setting with a step of 0.1V in the range of 1.5V to 4.0V is possible.
b
Exceptions:2.85V=R1126N281x5, 1.85V=R1126N181x5
Designation of Active Type:
B: active high type
c
D: active high, with auto discharge
Designation of Taping Type:
Ex. TR (refer to Taping Specifications; TR type is the standard direction.)
d
2
R1126N
PIN CONFIGURATION
ꢀSOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
• R1126N
Pin No.
Symbol
CE
Description
1
2
3
4
5
Chip Enable Pin
Ground Pin
No Connection
Output pin
GND
NC
VOUT
VDD
Input Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
VIN
Item
Rating
Unit
V
Input Voltage
6.5
6.5
VCE
Input Voltage (CE Pin)
Output Voltage
V
VOUT
IOUT
V
−0.3~VIN+0.3
160
Output Current
mA
mW
°C
°C
Power Dissipation (SOT-23-5) ∗
Operating Temperature Range
Storage Temperature Range
PD
420
Topt
Tstg
−40~85
−55~125
∗) For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
3
R1126N
ELECTRICAL CHARACTERISTICS
• R1126Nxx1B/D
Topt=25°C
Symbol
Item
Conditions
Min.
×0.985
×0.980
150
Typ.
Max.
×1.015
×1.020
Unit
VOUT
VOUT > 3.0V
3.0V
=
VIN = Set VOUT+1V
VOUT
Output Voltage
V
1mA
IOUT
30mA
=
=
IOUT
Output Current
mA
VIN−VOUT=1.0V
VIN=Set VOUT+1V
1mA
IOUT
150mA
=
=
∆VOUT/
Load Regulation
28
33
35
55
66
80
mV
1.5V VOUT < 2.0V
=
∆IOUT
2.0V VOUT < 3.0V
=
3.0V
VOUT
=
Refer to the ELECTRICAL CHARACTERISTICS
VDIF
ISS
Dropout Voltage
Supply Current
by OUTPUT VOLTAGE
10
18
VIN=Set VOUT+1V, IOUT=0mA
VIN=Set VOUT+1V, VCE=VDD
µA
µA
Istandby Supply Current (Standby)
0.1
1.0
∆VOUT/
IOUT=30mA
Line Regulation
∆VIN
0.02
0.10
%/V
Set VOUT+0.5V VIN 6.0V
=
=
f=1kHz
70
53
f=10kHz
RR
Ripple Rejection
dB
V
Ripple 0.2Vp-p
VIN−VOUT=1.0V,IOUT=30mA
VIN
Input Voltage
1.8
6.0
ppm
/°C
∆VOUT/
Output Voltage
IOUT=30mA
±100
Temperature Coefficient
∆Topt
−40°C Topt 85°C
=
=
Ilim
Short Current Limit
CE Pull-down Current
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
40
mA
µA
V
VOUT=0V
IPD
0.5
VCEH
VCEL
en
1.0
0.0
6.0
0.3
V
30
70
BW=10Hz to 100kHz
VCE=0V
µVrms
On Resistance of Nch Tr.
RLOW
for auto-discharge
Ω
(Only for D version)
4
R1126N
• ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V)
Condition
Typ.
0.54
0.50
0.46
0.44
0.37
0.29
Max.
0.86
0.75
0.70
0.65
0.56
0.46
VOUT = 1.5V
<
1.5V < VOUT 1.6V
=
<
1.6V < VOUT 1.7V
=
IOUT=150mA
<
1.7V < VOUT 2.0V
=
<
2.0V < VOUT 2.7V
=
<
2.7V < VOUT 4.0V
=
TYPICAL APPLICATIONS
DD
V
OUT
V
R1126N
Series
1
2
C
C
CE GND
(External Components)
C2 Ceramic 1.0µF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0µF
5
R1126N
TEST CIRCUITS
DD
V
OUT
V
R1126N
Series
V
1
2
OUT
I
C
C
OUT
V
↓
CE
GND
1
C =Ceramic 1.0µF
2
C =Ceramic 1.0µF
Fig.1 Standard test Circuit
DD
V
OUT
V
R1126N
Series
A
1
2
C
C
SS
I
CE GND
1
C =Ceramic 1.0µF
2
C =Ceramic 1.0µF
Fig.2 Supply Current Test Circuit
DD
V
OUT
V
R1126N
Series
Pulse
Generator
2
OUT
I
C
↓
CE GND
2
C =Ceramic 1.0µF
Fig.3 Ripple Rejection, Line Transient Response Test Circuit
6
R1126N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1126N151x
R1126N281x
1.6
3.0
2.5
2.0
1.5
1.0
0.5
0
1.4
1.2
1.0
0.8
0.6
VIN=1.8V
VIN=2.0V
VIN=2.5V
VIN=3.5V
0.4
0.2
0
VIN=3.1V
VIN=3.5V
VIN=3.8V
0
100
200
300
400
500
0
100
200
300
400
500
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
V
V
IN=4.3V
IN=4.5V
IN=5.0V
0
100
200
300
400
500
Output Current IOUT(mA)
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
1.6
3.0
2.5
2.0
1.5
1.0
0.5
0
1.4
1.2
1.0
0.8
0.6
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
0.4
0.2
0
OUT=30mA
OUT=50mA
OUT=150mA
OUT=150mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
7
R1126N
R1126N401x
5.0
4.0
3.0
2.0
1.0
0
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
0
1
2
3
4
5
6
Input Voltage VIN(V)
3) Supply Current vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
10
20
15
10
5
8
5
3
0
0
2.8
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
3.6
4.4
5.2
6.0
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N401x
25
20
15
10
5
0
4.0
4.5
5.0
5.5
6.0
Input Voltage VIN(V)
8
R1126N
4) Output Voltage vs. Temperature
R1126N151x
R1126N281x
1.53
2.83
2.82
2.81
2.80
2.79
2.78
2.77
2.76
1.52
1.51
1.50
1.49
1.48
1.47
1.46
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
R1126N401x
4.06
4.04
4.02
4.00
3.98
3.96
3.94
3.92
-50 -25
0
25
50
75
100
Temperature Topt(°C)
5) Supply Current vs. Temperature
R1126N151x
R1126N281x
16
16
14
12
10
8
14
12
10
8
6
6
4
4
2
2
0
0
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
9
R1126N
R1126N401x
16
14
12
10
8
6
4
2
0
-50 -25
0
25
50
75
100
Temperature Topt(°C)
6) Dropout Voltage vs. Temperature
R1126N151x
R1126N161x
700
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
85°C
25°C
-40°C
85°C
25°C
-40°C
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N171x
R1126N181x
600
500
400
300
200
100
0
600
500
400
300
200
100
0
85°C
25°C
-40°C
85°C
25°C
-40°C
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
10
R1126N
R1126N211x
R1126N281x
500
400
300
200
100
0
400
350
300
250
200
150
100
50
85°C
25°C
-40°C
85°C
25°C
-40°C
0
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
300
250
200
150
100
50
85°C
25°C
-40°C
0
0
25
50
75
100 125 150
Output Current IOUT(mA)
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
700
150mA
100mA
600
50mA
30mA
500
10mA
400
300
200
100
0
1
2
3
4
Set Output Voltage VREG(V)
11
R1126N
8) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN = none, COUT = 1µF)
R1126N281x
R1126N281x
Ripple Vp-p=0.2V, IOUT=1mA
Ripple Vp-p=0.5V, IOUT=1mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.0
3.0
3.0
3.1
3.2
3.3
3.4
3.5
2.9
3.0
3.0
3.0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N281x
Ripple Vp-p=0.2V, IOUT=30mA
R1126N281x
Ripple Vp-p=0.5V, IOUT=30mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.1
3.2
3.3
3.4
3.5
2.9
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N281x
Ripple Vp-p=0.2V, IOUT=50mA
R1126N281x
Ripple Vp-p=0.5V, IOUT=50mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.1
3.2
3.3
3.4
3.5
2.9
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
12
R1126N
9) Ripple Rejection vs. Frequency (CIN=none)
R1126N151x
R1126N151x
V
IN=2.7VDC+0.5Vp-p,COUT=1µF
VIN=2.7VDC+0.5Vp-p,COUT=2.2µF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1126N281x
R1126N281x
V
IN=3.8VDC+0.5Vp-p,COUT=1µF
VIN=3.8VDC+0.5Vp-p,COUT=2.2µF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1126N401x
R1126N401x
V
IN=5VDC+0.5Vp-p,COUT=1µF
VIN=5VDC+0.5Vp-p,COUT=2.2µF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
I
I
I
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
13
R1126N
10) Input Transient Response (IOUT=30mA, CIN= none, tr=tf=5µs, COUT = Ceramic 1µF)
R1126N151x
R1126N281x
1.55
1.54
1.53
1.52
1.51
1.50
1.49
1.48
4
3
2
1
0
2.85
2.84
2.83
2.82
2.81
2.80
2.79
2.78
6
5
4
3
2
1
0
Input Voltage
Input Voltage
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
R1126N401x
4.05
4.04
4.03
4.02
4.01
4.00
3.99
3.98
7
6
5
4
3
2
1
0
Input Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
11) Load Transient Response (tr=tf=0.5µs, CIN=Ceramic 1µF)
R1126N151x
R1126N151x
V
IN=2.5V,COUT=Ceramic 1.0µF
VIN=2.5V,COUT=Ceramic 2.2µF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
60
30
0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
14
R1126N
R1126N151x
R1126N151x
V
IN=2.5V,COUT=Ceramic 1.0µF
V
IN=2.5V,COUT=Ceramic 2.2µF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
20
10
0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
R1126N151x
R1126N151x
VIN=2.5V,COUT=Ceramic 1.0µF
VIN=2.5V,COUT=Ceramic 2.2µF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
150
1.9
1.8
1.7
1.6
1.5
1.4
1.3
150
100
50
0
100
50
0
Output Current 50mA↔100mA
Output Current 50mA↔100mA
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(µs)
Time t(µs)
R1126N281x
R1126N281x
V
IN=3.8V,COUT=Ceramic 1.0µF
V
IN=3.8V,COUT=Ceramic 2.2µF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
60
30
0
3.2
3.1
3.0
2.9
2.8
2.7
2.6
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
15
R1126N
R1126N281x
R1126N281x
V
IN=3.8V,COUT=Ceramic 1.0µF
V
IN=3.8V,COUT=Ceramic 2.2µF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
20
10
0
3.2
3.1
3.0
2.9
2.8
2.7
2.9
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
R1126N281x
R1126N281x
VIN=3.8V,COUT=Ceramic 1.0µF
VIN=3.8V,COUT=Ceramic 2.2µF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
100
50
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
100
50
0
Output Current 50mA↔100mA
Output Current 50mA↔100mA
0
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(µs)
Time t(µs)
R1126N401x
R1126N401x
V
IN=5.0V,COUT=Ceramic 1.0µF
V
IN=5.0V,COUT=Ceramic 2.2µF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
60
30
0
4.4
4.3
4.2
4.1
4.0
3.9
3.8
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
16
R1126N
R1126N401x
R1126N401x
V
IN=5.0V,COUT=Ceramic 1.0µF
V
IN=5.0V,COUT=Ceramic 2.2µF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
20
10
0
4.4
4.3
4.2
4.1
4.0
3.9
3.8
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(µs)
Time t(µs)
R1126N401x
R1126N401x
VIN=5.0V,COUT=Ceramic 1.0µF
VIN=5.0V,COUT=Ceramic 2.2µF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
150
100
50
4.4
4.3
4.2
4.1
4.0
3.9
3.8
150
100
50
0
Output Current 50mA↔100mA
Output Current 50mA↔100mA
0
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(µs)
Time t(µs)
12) Turn-on/off speed with CE pin (D version) (CIN=Ceramic 1.0µF, COUT=Ceramic 1.0µF)
R1126N151D
R1126N151D
V
IN=2.5V
VIN=2.5V
6
5
4
3
2
1
0
4
3
2
1
0
6
5
4
3
2
1
0
4
3
2
1
0
CE Input Voltage
CE Input Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
Output Voltage
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
-5
0
5
10 15 20 25 30 35 40 45
-40
0
40 80 120 160 200 240 280 320 360
Time t(µs)
Time t(µs)
17
R1126N
R1126N281D
R1126N281D
V
IN=3.8V
VIN=3.8V
8
7
6
5
4
3
2
1
0
4
3
2
1
0
8
7
6
5
4
3
2
1
0
4
3
CE Input Voltage
CE Input Voltage
2
1
0
Output Voltage
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
-5
0
5
10 15 20 25 30 35 40 45
-40
0
40 80 120 160 200 240 280 320 360
Time t(µs)
Time t(µs)
R1126N401D
R1126N401D
VIN=5.0V
VIN=5.0V
14
12
10
8
8
6
4
2
0
14
12
10
8
8
6
4
2
0
CE Input Voltage
CE Input Voltage
6
6
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
4
4
2
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
2
0
0
Output Voltage
-5
0
5
10 15 20 25 30 35 40 45
Time t(µs)
-40
0
40 80 120 160 200 240 280 320 360
Time t(µs)
18
R1126N
TECHNICAL NOTES
DD
V
OUT
V
R1126N
Series
1
2
C
C
CE GND
(External Components)
C2 Ceramic 1.0µF
Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0µF
When using these ICs, consider the following points:
1.Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor with a capacitance value as much as 1.0µF or more as C1 between VDD and GND pin, and
as close as possible to the pins.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
2.Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance).
(Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
19
R1126N
ESR vs. Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph.
Measurement conditions
VIN=VOUT+1V
COUT: GRM155B30J105KE18B
Frequency Band: 10Hz to 2MHz
Temperature: −40°C to 25°C
R1126N151x
R1126N281x
V
IN=1.52V to 6.5V, CIN=COUT=1.0µF
VIN=2.82V to 6.5V
100
10
100
10
Topt=85°C
Topt=-40°C
Topt=85°C
Topt=-40°C
1
1
0.1
0.01
0.1
0.01
0
30
60
90
120
150
0
30
60
90
120
150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
V
IN=4.02V to 6.5V
100
10
Topt=85°C
Topt=-40°C
1
0.1
0.01
0
30
60
90
120
150
Output Current IOUT(mA)
20
PE-SOT-23-5-071228
PACKAGE INFORMATION
• SOT-23-5 (SC-74A)
Unit: mm
PACKAGE DIMENSIONS
2.9±0.2
+0.2
−0.1
1.1
1.9±0.2
(0.95)
(0.95)
0.8±0.1
5
4
0 to 0.1
1
2
3
+0.1
−0.05
0.15
0.4±0.1
TAPING SPECIFICATION
4.0–0.1
+0.1
0
φ1.5
2.0–0.05
0.3–0.1
3.3
4.0–0.1
2.0Max.
1.1±0.1
TR
User Direction of Feed
TAPING REEL DIMENSIONS REUSE REEL (EIAJ-RRM-08Bc)
(1reel=3000pcs)
11.4±1.0
9.0±0.3
2±0.5
21±0.8
PE-SOT-23-5-071228
PACKAGE INFORMATION
POWER DISSIPATION (SOT-23-5)
This specification is at mounted on board. Power Dissipation (PD) depends on conditions of mounting on board.
This specification is based on the measurement at the condition below:
(Power Dissipation (SOT-23-5) is substitution of SOT-23-6.)
Measurement Conditions
Standard Land Pattern
Environment
Board Material
Board Dimensions
Copper Ratio
Mounting on Board (Wind velocity=0m/s)
Glass cloth epoxy plastic (Double sided)
40mm × 40mm × 1.6mm
Top side : Approx. 50% , Back side : Approx. 50%
φ0.5mm × 44pcs
Through-hole
Measurement Result
(Topt=25°C, Tjmax=125°C)
Free Air
Standard Land Pattern
420mW
Power Dissipation
250mW
Thermal Resistance
θja=(125−25°C)/0.42W=238°C/W
400°C/W
600
40
500
400
300
200
100
0
On Board
420
250
Free Air
0
25
50
75 85 100
125
150
Ambient Temperature (°C)
Power Dissipation
Measurement Board Pattern
IC Mount Area Unit : mm
RECOMMENDED LAND PATTERN
0.7 MAX.
1.0
2.4
0.95
1.9
0.95
(Unit: mm)
ME-R1126N-0509
MARK INFORMATION
R1126N SERIES MARK SPECIFICATION
• SOT-23-5 (SC-74A)
1
4
2
5
3
,
,
,
: Product Code (refer to Part Number vs. Product Code)
4
5
: Lot Number ( ,
)
: alphabetic character
1
2
3
4
5
• Part Number vs. Product Code
Product Code
Product Code
Part Number
Part Number
1
2
3
1
2
3
R1126N151B
R1126N161B
R1126N171B
R1126N181B
R1126N191B
R1126N201B
2
2
2
2
2
2
1
1
1
1
1
2
5
6
7
8
9
0
R1126N151D
R1126N161D
R1126N171D
R1126N181D
R1126N191D
R1126N201D
3
3
3
3
3
3
1
1
1
1
1
2
5
6
7
8
9
0
R1126N211B
R1126N221B
R1126N231B
R1126N241B
R1126N251B
R1126N261B
R1126N271B
R1126N281B
R1126N291B
R1126N301B
R1126N311B
R1126N321B
R1126N331B
R1126N341B
R1126N351B
R1126N361B
R1126N371B
R1126N381B
R1126N391B
R1126N401B
R1126N181B5
R1126N281B5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
4
4
4
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
0
1
2
R1126N211D
R1126N221D
R1126N231D
R1126N241D
R1126N251D
R1126N261D
R1126N271D
R1126N281D
R1126N291D
R1126N301D
R1126N311D
R1126N321D
R1126N331D
R1126N341D
R1126N351D
R1126N361D
R1126N371D
R1126N381D
R1126N391D
R1126N401D
R1126N181D5
R1126N281D5
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
2
2
2
2
2
2
2
2
2
3
3
3
3
3
3
3
3
3
3
4
4
4
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
0
1
2
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