R1126N261B-TR [RICOH]
Fixed Positive LDO Regulator, 2.6V, 0.56V Dropout, CMOS, PDSO5, SOT-23, SC-74A, 5 PIN;
| 型号： | R1126N261B-TR |
| 厂家： | 
RICOH ELECTRONICS DEVICES DIVISION |
| 描述： | Fixed Positive LDO Regulator, 2.6V, 0.56V Dropout, CMOS, PDSO5, SOT-23, SC-74A, 5 PIN 光电二极管 输出元件 调节器 |
| 文件： | 总21页 (文件大小：571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R1126N SERIES
Discontinued
LOW NOISE 150mA LDO REGULATOR
NO. EA-130-120404
OUTLINE
The R1126N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply
current, low on Resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an
error amplifier, resistor-net for voltage setting, a short current limit circuit, a chip enable circuit, and so on.
These ICs perform with low dropout voltage and the chip-enable function. The supply current at no load of this
IC is only 10μA, and the line transient response and the load transient response of the R1126N Series are
excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment.
The supply current at no load of R1126x Series is remarkably reduced compared with R1114x Series. The
mode change signal to reduce the supply current is not necessary. The output voltage accuracy is also improved.
(±1.5%)
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
therefore high density mounting of the ICs on boards is possible.
R1116N Series that a pin configuration differs from R1126N Series are available.
FEATURES
• Low Supply Current ............................................................. Typ. 10μA
• Standby Current................................................................... Typ. 0.1μA
•
•
Input Voltage Range ............................................................ 1.8V to 6.0V
Output Voltage Range.......................................................... 1.5V to 4.0V
• Low Dropout Voltage............................................................ Typ. 0.29V (IOUT=150mA,VOUT=2.8V)
• High Ripple Rejection .......................................................... Typ. 70dB (f=1kHz, VOUT=3.0V)
Typ. 53dB (f=10kHz)
<
• High Output Voltage Accuracy .............................................±1.5% (1.5V
VOUT
3.0V), ±2.0% (VOUT>3.0V)
=
• Low Temperature-Drift Coefficient of Output Voltage........... Typ. ±100ppm/°C
• Excellent Line Regulation .................................................... Typ. 0.02%/V
•
Small Packages ................................................................. SOT-23-5
• Built-in Fold Back Protection Circuit .................................... Typ. 40mA (Current at short mode)
Ceramic capacitors are recommended to be used with this IC ... CIN=COUT=1.0μF (Ceramic)
•
APPLICATIONS
• Power source for portable communication equipment.
• Power source for portable music player.
• Power source for electrical appliances such as cameras, VCRs and camcorders.
• Power source for battery-powered equipment.
1
R1126N
BLOCK DIAGRAMS
R1126Nxx1B
R1126Nxx1D
DD
V
DD
V
OUT
V
OUT
V
Vref
Current Limit
Vref
Current Limit
CE
CE
GND
GND
SELECTION GUIDE
The output voltage, version, and the taping type for the ICs can be selected at the user’s request.
The selection can be made with designating the part number as shown below;
R1126Nxx1x-xx ←Part Number
↑ ↑ ↑ ↑
a b c d
Code
Contents
Designation of Package Type:
N: SOT-23-5
a
Setting Output Voltage (VOUT):
Stepwise setting with a step of 0.1V in the range of 1.5V to 4.0V is possible.
b
Exceptions:2.85V=R1126N281x5, 1.85V=R1126N181x5
Designation of Active Type:
B: active high type
c
D: active high, with auto discharge
Designation of Taping Type:
Ex. TR (refer to Taping Specifications; TR type is the standard direction.)
d
2
R1126N
PIN CONFIGURATION
z SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
• R1126N
Pin No.
Symbol
CE
Description
1
2
3
4
5
Chip Enable Pin
Ground Pin
No Connection
Output pin
GND
NC
VOUT
VDD
Input Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
VIN
Item
Rating
Unit
V
Input Voltage
6.5
6.5
VCE
Input Voltage (CE Pin)
Output Voltage
V
VOUT
IOUT
V
−0.3~VIN+0.3
160
Output Current
mA
mW
°C
°C
Power Dissipation (SOT-23-5) ∗
Operating Temperature Range
Storage Temperature Range
PD
420
Topt
Tstg
−40~85
−55~125
∗) For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
3
R1126N
ELECTRICAL CHARACTERISTICS
• R1126Nxx1B/D
Topt=25°C
Symbol
Item
Conditions
Min.
×0.985
×0.980
150
Typ.
Max.
×1.015
×1.020
Unit
VOUT
3.0V
=
VIN = Set VOUT+1V
VOUT
Output Voltage
V
1mA
IOUT
30mA
=
VOUT > 3.0V
IOUT
Output Current
mA
VIN−VOUT=1.0V
VIN=Set VOUT+1V
1mA
IOUT
150mA
=
ΔVOUT/
ΔIOUT
Load Regulation
28
33
35
55
66
80
mV
1.5V VOUT < 2.0V
2.0V VOUT < 3.0V
3.0V
VOUT
Refer to the ELECTRICAL CHARACTERISTICS
by OUTPUT VOLTAGE
VDIF
ISS
Dropout Voltage
Supply Current
10
18
VIN=Set VOUT+1V, IOUT=0mA
VIN=Set VOUT+1V, VCE=VDD
IOUT=30mA
μA
μA
Istandby Supply Current (Standby)
0.1
1.0
ΔVOUT/
Line Regulation
ΔVIN
0.02
0.10
%/V
Set VOUT+0.5V VIN 6.0V
=
f=1kHz
f=10kHz
70
53
RR
Ripple Rejection
dB
V
Ripple 0.2Vp-p
VIN−VOUT=1.0V,IOUT=30mA
VIN
Input Voltage
1.8
6.0
ppm
/°C
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
IOUT=30mA
−40°C Topt 85°C
±100
Ilim
IPD
Short Current Limit
CE Pull-down Current
CE Input Voltage “H”
CE Input Voltage “L”
Output Noise
40
mA
μA
VOUT=0V
0.5
VCEH
VCEL
en
1.0
0.0
6.0
0.3
V
V
30
70
BW=10Hz to 100kHz
VCE=0V
μVrms
On Resistance of Nch Tr.
for auto-discharge
(Only for D version)
RLOW
Ω
4
R1126N
• ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V)
Condition
Typ.
0.54
0.50
0.46
0.44
0.37
0.29
Max.
0.86
0.75
0.70
0.65
0.56
0.46
VOUT = 1.5V
<
1.5V < VOUT 1.6V
<
1.6V < VOUT 1.7V
IOUT=150mA
<
1.7V < VOUT 2.0V
<
2.0V < VOUT 2.7V
<
2.7V < VOUT 4.0V
TYPICAL APPLICATIONS
DD
V
OUT
V
R1126N
Series
1
2
C
C
CE GND
(External Components)
C2 Ceramic 1.0μF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0μF
5
R1126N
TEST CIRCUITS
DD
V
OUT
V
R1126N
Series
V
1
2
OUT
I
C
C
OUT
V
↓
CE
GND
1
C =Ceramic 1.0μF
2
C =Ceramic 1.0μF
Fig.1 Standard test Circuit
DD
V
OUT
V
R1126N
Series
A
1
2
C
C
SS
I
CE GND
1
C =Ceramic 1.0μF
2
C =Ceramic 1.0μF
Fig.2 Supply Current Test Circuit
DD
V
OUT
V
R1126N
Series
Pulse
Generator
2
OUT
I
C
↓
CE GND
2
C =Ceramic 1.0μF
Fig.3 Ripple Rejection, Line Transient Response Test Circuit
6
R1126N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1126N151x
R1126N281x
1.6
3.0
2.5
2.0
1.5
1.0
0.5
0
1.4
1.2
1.0
0.8
0.6
VIN=1.8V
VIN=2.0V
VIN=2.5V
VIN=3.5V
0.4
0.2
0
V
V
V
IN=3.1V
IN=3.5V
IN=3.8V
0
100
200
300
400
500
0
100
200
300
400
500
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
V
V
IN=4.3V
IN=4.5V
IN=5.0V
0
100
200
300
400
500
Output Current IOUT(mA)
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
1.6
3.0
2.5
2.0
1.5
1.0
0.5
0
1.4
1.2
1.0
0.8
0.6
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
0.4
0.2
0
OUT=30mA
OUT=50mA
OUT=150mA
OUT=150mA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
7
R1126N
R1126N401x
5.0
4.0
3.0
2.0
1.0
0
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
0
1
2
3
4
5
6
Input Voltage VIN(V)
3) Supply Current vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
10
20
15
10
5
8
5
3
0
0
2.8
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
3.6
4.4
5.2
6.0
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N401x
25
20
15
10
5
0
4.0
4.5
5.0
5.5
6.0
Input Voltage VIN(V)
8
R1126N
4) Output Voltage vs. Temperature
R1126N151x
R1126N281x
1.53
2.83
2.82
2.81
2.80
2.79
2.78
2.77
2.76
1.52
1.51
1.50
1.49
1.48
1.47
1.46
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
R1126N401x
4.06
4.04
4.02
4.00
3.98
3.96
3.94
3.92
-50 -25
0
25
50
75
100
Temperature Topt(°C)
5) Supply Current vs. Temperature
R1126N151x
R1126N281x
16
16
14
12
10
8
14
12
10
8
6
6
4
4
2
2
0
0
-50 -25
0
25
50
75
100
-50 -25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
9
R1126N
R1126N401x
16
14
12
10
8
6
4
2
0
-50 -25
0
25
50
75
100
Temperature Topt(°C)
6) Dropout Voltage vs. Temperature
R1126N151x
R1126N161x
700
700
600
500
400
300
200
100
0
600
500
400
300
200
100
0
85°C
85°C
25°C
-40°C
25°C
-40°C
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N171x
R1126N181x
600
500
400
300
200
100
0
600
500
400
300
200
100
0
85°C
25°C
85°C
25°C
-40°C
-40°C
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
10
R1126N
R1126N211x
R1126N281x
500
400
300
200
100
0
400
350
300
250
200
150
100
50
85°C
25°C
85°C
25°C
-40°C
-40°C
0
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
300
250
200
150
100
50
85°C
25°C
-40°C
0
0
25
50
75
100 125 150
Output Current IOUT(mA)
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
700
150mA
100mA
600
50mA
30mA
500
10mA
400
300
200
100
0
1
2
3
4
Set Output Voltage VREG(V)
11
R1126N
8) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN = none, COUT = 1μF)
R1126N281x
R1126N281x
Ripple Vp-p=0.2V, IOUT=1mA
Ripple Vp-p=0.5V, IOUT=1mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.0
3.0
3.0
3.1
3.2
3.3
3.4
3.5
2.9
3.0
3.0
3.0
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N281x
Ripple Vp-p=0.2V, IOUT=30mA
R1126N281x
Ripple Vp-p=0.5V, IOUT=30mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.1
3.2
3.3
3.4
3.5
2.9
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1126N281x
Ripple Vp-p=0.2V, IOUT=50mA
R1126N281x
Ripple Vp-p=0.5V, IOUT=50mA
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
1kHz
10kHz
100kHz
1kHz
10kHz
100kHz
2.9
3.1
3.2
3.3
3.4
3.5
2.9
3.1
3.2
3.3
3.4
3.5
Input Voltage VIN(V)
Input Voltage VIN(V)
12
R1126N
9) Ripple Rejection vs. Frequency (CIN=none)
R1126N151x
R1126N151x
V
IN=2.7VDC+0.5Vp-p,COUT=1μF
VIN=2.7VDC+0.5Vp-p,COUT=2.2μF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1126N281x
R1126N281x
V
IN=3.8VDC+0.5Vp-p,COUT=1μF
VIN=3.8VDC+0.5Vp-p,COUT=2.2μF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
I
I
I
I
OUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
R1126N401x
R1126N401x
V
IN=5VDC+0.5Vp-p,COUT=1μF
VIN=5VDC+0.5Vp-p,COUT=2.2μF
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
I
I
I
I
OUT=1mA
IOUT=1mA
OUT=30mA
OUT=50mA
OUT=150mA
I
I
I
OUT=30mA
OUT=50mA
OUT=150mA
0.1
1
10
100
0.1
1
10
100
Frequency f(kHz)
Frequency f(kHz)
13
R1126N
10) Input Transient Response (IOUT=30mA, CIN= none, tr=tf=5μs, COUT = Ceramic 1μF)
R1126N151x
R1126N281x
1.55
1.54
1.53
1.52
1.51
1.50
1.49
1.48
4
3
2
1
0
2.85
2.84
2.83
2.82
2.81
2.80
2.79
2.78
6
5
4
3
2
1
0
Input Voltage
Input Voltage
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
R1126N401x
4.05
4.04
4.03
4.02
4.01
4.00
3.99
3.98
7
6
5
4
3
2
1
0
Input Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
11) Load Transient Response (tr=tf=0.5μs, CIN=Ceramic 1μF)
R1126N151x
R1126N151x
VIN=2.5V,COUT=Ceramic 1.0μF
VIN=2.5V,COUT=Ceramic 2.2μF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
60
30
0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
14
R1126N
R1126N151x
R1126N151x
V
IN=2.5V,COUT=Ceramic 1.0μF
V
IN=2.5V,COUT=Ceramic 2.2μF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
20
10
0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90 100
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
R1126N151x
R1126N151x
V
IN=2.5V,COUT=Ceramic 1.0μF
VIN=2.5V,COUT=Ceramic 2.2μF
1.9
1.8
1.7
1.6
1.5
1.4
1.3
150
100
50
1.9
1.8
1.7
1.6
1.5
1.4
1.3
150
100
50
Output Current 50mA↔100mA
Output Current 50mA↔100mA
0
0
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(μs)
Time t(μs)
R1126N281x
R1126N281x
V
IN=3.8V,COUT=Ceramic 1.0μF
V
IN=3.8V,COUT=Ceramic 2.2μF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
60
30
0
3.2
3.1
3.0
2.9
2.8
2.7
2.6
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
15
R1126N
R1126N281x
R1126N281x
V
IN=3.8V,COUT=Ceramic 1.0μF
V
IN=3.8V,COUT=Ceramic 2.2μF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
20
10
0
3.2
3.1
3.0
2.9
2.8
2.7
2.9
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
R1126N281x
R1126N281x
V
IN=3.8V,COUT=Ceramic 1.0μF
VIN=3.8V,COUT=Ceramic 2.2μF
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
100
50
3.2
3.1
3.0
2.9
2.8
2.7
2.6
150
100
50
Output Current 50mA↔100mA
Output Current 50mA↔100mA
0
0
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(μs)
Time t(μs)
R1126N401x
R1126N401x
V
IN=5.0V,COUT=Ceramic 1.0μF
V
IN=5.0V,COUT=Ceramic 2.2μF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
60
30
0
4.4
4.3
4.2
4.1
4.0
3.9
3.8
60
30
0
Output Current 0mA↔30mA
Output Current 0mA↔30mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
16
R1126N
R1126N401x
R1126N401x
V
IN=5.0V,COUT=Ceramic 1.0μF
V
IN=5.0V,COUT=Ceramic 2.2μF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
20
10
0
4.4
4.3
4.2
4.1
4.0
3.9
3.8
20
10
0
Output Current 1mA↔10mA
Output Current 1mA↔10mA
Output Voltage
Output Voltage
0
10 20 30 40 50 60 70 80 90
0
10 20 30 40 50 60 70 80 90 100
Time t(μs)
Time t(μs)
R1126N401x
R1126N401x
V
IN=5.0V,COUT=Ceramic 1.0μF
VIN=5.0V,COUT=Ceramic 2.2μF
4.4
4.3
4.2
4.1
4.0
3.9
3.8
150
100
50
4.4
4.3
4.2
4.1
4.0
3.9
3.8
150
100
50
Output Current 50mA↔100mA
Output Current 50mA↔100mA
0
0
Output Voltage
Output Voltage
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Time t(μs)
Time t(μs)
12) Turn-on/off speed with CE pin (D version) (CIN=Ceramic 1.0μF, COUT=Ceramic 1.0μF)
R1126N151D
R1126N151D
V
IN=2.5V
VIN=2.5V
6
5
4
3
2
1
0
4
3
2
1
0
6
5
4
3
2
1
0
4
3
2
1
0
CE Input Voltage
CE Input Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
Output Voltage
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
-5
0
5
10 15 20 25 30 35 40 45
-40
0
40 80 120 160 200 240 280 320 360
Time t(μs)
Time t(μs)
17
R1126N
R1126N281D
R1126N281D
V
IN=3.8V
VIN=3.8V
8
7
6
5
4
3
2
1
0
4
3
2
1
0
8
7
6
5
4
3
2
1
0
4
3
CE Input Voltage
CE Input Voltage
2
1
0
Output Voltage
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
-5
0
5
10 15 20 25 30 35 40 45
-40
0
40 80 120 160 200 240 280 320 360
Time t(μs)
Time t(μs)
R1126N401D
R1126N401D
VIN=5.0V
VIN=5.0V
14
12
10
8
8
6
4
2
0
14
12
10
8
8
6
4
2
0
CE Input Voltage
CE Input Voltage
6
6
Output Voltage
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
4
4
2
I
I
I
OUT=0mA
OUT=30mA
OUT=150mA
2
0
0
Output Voltage
-5
0
5
10 15 20 25 30 35 40 45
Time t(μs)
-40
0
40 80 120 160 200 240 280 320 360
Time t(μs)
18
R1126N
TECHNICAL NOTES
DD
V
OUT
V
R1126N
Series
1
2
C
C
CE GND
(External Components)
C2 Ceramic 1.0μF
Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0μF
When using these ICs, consider the following points:
1.Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor with a capacitance value as much as 1.0μF or more as C1 between VDD and GND pin, and
as close as possible to the pins.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
2.Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance).
(Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
19
R1126N
ESR vs. Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40μV (Avg.) are marked as the hatched area in the graph.
Measurement conditions
VIN=VOUT+1V
COUT: GRM155B30J105KE18B
Frequency Band: 10Hz to 2MHz
Temperature: −40°C to 25°C
R1126N151x
R1126N281x
V
IN=1.52V to 6.5V, CIN=COUT=1.0μF
VIN=2.82V to 6.5V
100
10
100
10
Topt=85°C
Topt=-40°C
Topt=85°C
Topt=-40°C
1
1
0.1
0.01
0.1
0.01
0
30
60
90
120
150
0
30
60
90
120
150
Output Current IOUT(mA)
Output Current IOUT(mA)
R1126N401x
V
IN=4.02V to 6.5V
100
10
Topt=85°C
Topt=-40°C
1
0.1
0.01
0
30
60
90
120
150
Output Current IOUT(mA)
20
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest
information thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part
without prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before
exporting or otherwise taking out of your country the products or the technical information
described herein.
4.The technical information described in this document shows typical characteristics of and
example application circuits for the products. The release of such information is not to be
construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual
property rights or any other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment,
measuring instruments, consumer electronic products, amusement equipment etc.). Those
customers intending to use a product in an application requiring extreme quality and reliability,
for example, in a highly specific application where the failure or misoperation of the product
could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system,
traffic control system, automotive and transportation equipment, combustion equipment, safety
devices, life support system etc.) should first contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough
to incorporate safety measures in their design, such as redundancy feature, firecontainment
feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments
concerning the products or the technical information.
RICOH COMPANY,LTD. Electronic Devices Company
■Ricoh awarded ISO 14001 certification.
■
Ricoh presented with the Japan Management Quality Award for 1999.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
will be shipped from now on comply with RoHS Directive.
http://www.ricoh.com/LSI/
RICOH COMPANY, LTD.
Electronic Devices Company
● Higashi-Shinagawa Office (International Sales)
3-32-3, Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8655, Japan
Phone: +81-3-5479-2857 Fax: +81-3-5479-0502
RICOH EUROPE (NETHERLANDS) B.V.
● Semiconductor Support Centre
Prof. W.H.Keesomlaan 1, 1183 DL Amstelveen, The Netherlands
P.O.Box 114, 1180 AC Amstelveen
Phone: +31-20-5474-309 Fax: +31-20-5474-791
RICOH ELECTRONIC DEVICES KOREA Co., Ltd.
11 floor, Haesung 1 building, 942, Daechidong, Gangnamgu, Seoul, Korea
Phone: +82-2-2135-5700 Fax: +82-2-2135-5705
RICOH ELECTRONIC DEVICES SHANGHAI Co., Ltd.
Room403, No.2 Building, 690#Bi Bo Road, Pu Dong New district, Shanghai 201203,
People's Republic of China
Phone: +86-21-5027-3200 Fax: +86-21-5027-3299
RICOH COMPANY, LTD.
Electronic Devices Company
● Taipei office
Room109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623
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