R1151N26B-TR [RICOH]
Fixed Positive LDO Regulator, 2.6V, 0.2V Dropout, CMOS, PDSO6, MINI, PLASTIC, SOT-23, 6 PIN;型号: | R1151N26B-TR |
厂家: | RICOH ELECTRONICS DEVICES DIVISION |
描述: | Fixed Positive LDO Regulator, 2.6V, 0.2V Dropout, CMOS, PDSO6, MINI, PLASTIC, SOT-23, 6 PIN 光电二极管 输出元件 调节器 |
文件: | 总27页 (文件大小:413K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Boost type Voltage Regulator with Reset
NO. EA-092-120404
R1151N SERIES
OUTLINE
The R1151N Series are CMOS-based boost type voltage regulator ICs with high output voltage accuracy, low sup-
ply current, and high ripple rejection. Each of these voltage regulator controllers consists of a voltage reference unit,
an error amplifier, comparators, resistors for output and reset voltage setting, a current limit protection circuit, and a
chip enable circuit.
In addition to low consumption current by CMOS process, the chip enable function prolongs the battery life. Dy-
namic response and ripple rejection of the R1151N Series are excellent, further these are low noise type, plus maxi-
mum operating input voltage tolerance is up to 18.5V, thus these ICs are very suitable for the power supply for hand-
held equipment and other power management applications using AC adapter input voltage.
The output voltage of these ICs is internally fixed with high accuracy. Since the package for these ICs is SOT-23-6
(Mini-mold) package, high density mounting of the ICs on boards is possible.
FEATURES
• Ultra-Low Supply Current............................................... Typ. 70µA (IOUT=0mA)
• Standby Mode................................................................... Typ. 0.1µA
• Low Dropout Voltage ....................................................... Typ. 0.1V (IOUT=100mA *Depends on External Transistor)
• High Ripple Rejection ...................................................... Typ. 60dB (f=1kHz)
• Low Temperature-Drift Coefficient of Output Voltage ....... Typ.±100ppm/°C
• High Output Voltage Accuracy ........................................ ±2.0%
• Excellent Dynamic Response
• Small Package .................................................................. SOT-23-6 (Mini-mold)
• Output Voltage.................................................................. Stepwise setting with a step of 0.1V in the range of 2.5V to 9.0V
• Built-in chip enable circuit (2 types; A: active low, B: active high)
• Output Capacitor .............................................................. Tantalum type recommendation (or Ceramic+Series Resistor)
• Built-in output voltage detector ...................................... with delay (C version)
• Detector Threshold Tolerance......................................... ±2.5%
• Detector Threshold Voltage ............................................ Stepwise setting with a step of 0.1V in the range of 1.7V to 8.0V
• Operating Input Voltage ................................................... Max. 18.5V
APPLICATIONS
• Power source for handheld equipment such as cameras and videos.
• Power source for home appliances.
• Power source for battery-powered equipment.
1
R1151N
BLOCK DIAGRAMS
R1151NxxxB
CE
EXT
1
4
VDD
6
3
5
VOUT
+
-
-
+
Vref
V
DET
2
6
Vref
Current Limit
GND
R1151NxxxC
CD
EXT
1
4
V
DD
3
5
VOUT
+
-
-
+
Vref
VDET
2
Vref
Current Limit
GND
SELECTION GUIDE
The output voltage, mask option code, and the taping type for the ICs can be selected at the user's request. The
selection can be made with designating the part number as shown below;
R1151Nxxxx-xx
↑ ↑ ↑
←Part Number
a b c
Code
Contents
a
Code Number for Voltage Setting
Setting mask option :
CE
A: with
(active at "L" type)
b
c
B: with CE (active at "H" type)
C: with the pin for external capacitor to set the output delay of voltage detector
Designation of Taping Type :
Ex. TR (Refer to Taping Specifications.)
2
R1151N
PIN CONFIGURATION
SOT-23-6
6
5
4
V
DD
GND CE/CD
(MARK SIDE)
EXT
1
V
DET
V
OUT
2
3
PIN DESCRIPTIONS
Pin No.
Symbol
Description
1
2
3
4
4
5
6
EXT
External Transistor Drive Pin
Voltage Detector Output Pin
Voltage Regulator Output pin
Chip Enable Pin (A/B version)
VDET
VOUT
CE
or CE
CD
Pin for External capacitor to set Output Delay of Voltage Detector (C version)
GND
VDD
Ground Pin
Input Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
20
Unit
V
VIN
Input Voltage
CE
Input Voltage (
/CE/CD Pin)
VCE/CD
VOUT
VEXT
VDET
IEXT
-0.3 ∼ VIN+0.3
-0.3 ∼ VIN+0.3
-0.3 ∼ VIN+0.3
-0.3 ∼ VIN+0.3
30
V
Output Voltage (VOUT Pin)
Output Voltage (EXT Pin)
Output Voltage (VDET Pin)
EXT Output Current
V
V
V
mA
mW
°C
°C
PD
Power Dissipation
150
Topt
Tstg
Operating Temperature Range
Storage Temperature Range
-40 ~ 85
-55 ~ 125
3
R1151N
ELECTRICAL CHARACTERISTICS
• R1151NxxxA/B
Topt=25°C
Symbol
VOUT
Item
Output Voltage
Conditions
VIN = Set VOUT+1V
Min.
Typ.
Max.
Unit
VOUT
VOUT
V
A
IOUT = 50mA
×0.98
×1.02
IOUT
Output Current
Load Regulation
VIN - VOUT = 1.0V
1Note
VIN = Set VOUT+1V
∆VOUT/∆IOUT
Refer to the Load Regulation Table
1mA ≤ IOUT ≤ 100mA
VDIF
ISS
Dropout Voltage
IOUT = 100mA
0.1Note
70
0.2
V
Supply Current
VIN = Set VOUT+1V, IOUT = 0mA
VIN = 18.5V
100
µA
µA
µA
Istandby
IEXTleak
Supply Current (Standby)
EXT Leakage Current
15
0.5
Set VOUT+0.5V ≤ VIN ≤ 18.5V
∆VOUT/∆VIN
Line Regulation
0.00
0.02
60
0.10
%/V
IOUT = 50mA
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT+1V
RR
VIN
Ripple Rejection
Input Voltage
dB
V
18.5
27
Output Voltage
IOUT = 10mA
ppm
/°C
∆VOUT/∆T
±100
Temperature Coefficient
-40°C ≤ Topt ≤ 85°C
Base Current IB of PNP Tr.
VIN - VOUT = 1.0V
Ilim
IRPT
Current Limit
8
mA
mA
Base Current IB of PNP Tr.
VOUT = 0V
Short Current Limit
0.7
2
CE
CE
CE
/CE Pull-up/down Resistance
/CE Input Voltage "H"
/CE Input Voltage "L"
RUD
VCEH
VCEL
MΩ
V
1.5
VIN
0.00
0.25
V
-VDET
-VDET
-VDET
Detector Threshold
V
×0.975
×1.025
Detector Threshold
Hysteresis Range
-VDET
-VDET
-VDET
VHYS
IOUT2
V
×0.03
×0.05
×0.07
Output Current 2
VDD = 1.5V, VDS = 0.5V
2.0
5.0
10.0
mA
Detector Threshold
ppm
/°C
∆VDET/∆T
-40°C ≤ Topt ≤ 85°C
±100
Temperature Coefficient
tPLH
VDDL
Output Delay Time
0.1
1.1
ms
V
Minimum Operating Voltage
0.9
Note: This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
4
R1151N
• R1151NxxxC
Topt=25°C
Symbol
VOUT
Item
Output Voltage
Conditions
VIN = Set VOUT+1V
Min.
Typ.
Max.
Unit
VOUT
VOUT
V
A
×0.98
IOUT = 50mA
×1.02
IOUT
Output Current
Load Regulation
VIN - VOUT = 1.0V
1*Note1
VIN = Set VOUT+1V
∆VOUT/∆IOUT
Refer to the Load Regulation Table
0.1*Note1
1mA ≤ IOUT ≤ 100mA
VDIF
ISS
Dropout Voltage
IOUT = 100mA
V
Supply Current
VIN = Set VOUT+1V, IOUT = 0mA
70
100
0.5
µA
µA
IEXTleak
EXT Leakage Current
Set VOUT+0.5V ≤ VIN ≤ 18.5V
∆VOUT/∆VIN
Line Regulation
0.00
0.02
60
0.10
18.5
27
%/V
IOUT = 50mA
f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT+1V
RR
VIN
Ripple Rejection
Input Voltage
dB
V
Output Voltage
IOUT = 10mA
ppm
/°C
∆VOUT/∆T
±100
0.7
Temperature Coefficient
-40°C ≤ Topt ≤ 85°C
Base Current IB of PNP Tr.
VIN - VOUT = 1.0V
Ilim
IRPT
Current Limit
8
mA
mA
V
Base Current IB of PNP Tr.
VOUT = 0V
Short Current Limit
Detector Threshold
-VDET
-VDET
-VDET
×0.975
×1.025
Detector Threshold
Hysteresis Range
-VDET
-VDET
-VDET
VHYS
IOUT2
V
×0.03
×0.05
×0.07
Output Current 2
VDD = 1.5V, VDS = 0.5V
-40°C ≤ Topt ≤ 85°C
CD=220pF*Note2
2.0
5.0
10.0
mA
Detector Threshold
ppm
/°C
∆VDET/∆T
±100
Temperature Coefficient
tPLH
VDDL
Output Delay Time
0.9
1.6
0.9
2.7
1.1
ms
V
Minimum Operating Voltage
Note1:This item depends on the capability of external PNP transistor. Use low saturation type transistor with
hFE value range of 100 to 300.
Note2:VDET pin is pulled-up to VDD via 470kΩ resistance. The time is between the rising edge of VOUT level from
0.9V to (+VDET)+2.0V and the reaching point to ((+VDET)+2.0V)/2 of the VDET output voltage.
5
R1151N
• Load Regulation Table
Load Regulation ∆VOUT/∆IOUT (mV)
Output Voltage
VOUT (V)
2.5 to 3.3
3.4 to 5.0
5.1 to 7.0
7.1 to 9.0
Typ.
20
Max.
60
30
90
40
130
160
50
OPERATION
In these ICs, fluctuation of Output Voltage, VOUT is detected by the feed-back registers, and the result is compared
with a reference voltage with the error amplifier and control the base current of an external PNP transistor so that a
constant voltage is output. The base current is monitored with the base current limit circuit. If the base current may
be too large, the protection circuit works, further, output voltage is monitored with the built-in voltage detector. If the
set detector threshold voltage is detected, reset signal will be output.
TECHNICAL NOTES
When using these ICs, consider the following points:
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this pur-
pose, be sure to use as much as 10µF capacitor as CL with good frequency characteristics and ESR (Equivalent Series
Resistance).
The best suitable equivalent series resistor value (ESR) is approximately 1Ω.
If the ESR of the output capacitor is too large, output may be unstable, therefore fully evaluation is necessary.
Make VDD and GND lines sufficient. When their impedance of these is high, noise pickup or unstable operation may be
the result. Connect a capacitor with a capacitance value of as much as 10µF between VDD and GND as close as possible
to these pins.
Set external components, especially output capacitor, as close as possible to the ICs.
Refer to the next equation to calculate the output delay time of C version and decide the capacitance value for the de-
lay time.
tPLH =1.83×C/(300×10-9)
C: Capacitance value (F)
Recommended pull-up resistance (R1) value is 470kΩ. If the value is too small, released voltage may shift, therefore,
use 10kΩ or more value resistor.
6
R1151N
TEST CIRCUITS
PNP
PNP
1
1
VIN
VIN
IOUT
IOUT
6
2
3
4
6
2
3
4
R1151NxxC
5
R1151NxxC
5
R1
C2
VDET
C2
C1
C1
Fig.1 Standard test Circuit
Fig.2 Supply Current Test Circuit
C1=220pF, C2=10µF
R1=470kΩ C1=220pF, C2=10µF
PNP
1
PNP
1
V
IN
V
IN
IOUT
IOUT
6
2
3
4
6
2
3
4
R1151NxxC
5
R1151NxxC
5
P.G.
P.G.
C2
C2
C1
C1
Fig.3 Ripple Rejection, Line Transient Response Test Circuit Fig.4 Load Transient Response Test Circuit
C1=220pF, C2=10µF
C1=220pF, C2=10µF
TYPICAL APPLICATION
OUT
PNP Tr
EXT
IN
+
+
VDD
VOUT
CI
CL
R1151NxxxC
GND
CD
R1
+
RESET
VDET
CD
(External Components)
C1 10µF R1=470kΩ PNP Tr.: 2SA1441, 2SB940, 2SB703
CL 10µF
7
R1151N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
a. External Tr.: 2SA1441
R1151N (VR=9.0V)
R1151N (VR=5.0V)
6.00
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
10.00
9.00
8.00
V
IN=10V
IN=11V
IN=9.5V
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
V
V
V
IN=7V
IN=6V
V
V
V
IN=5.5V
IN=5.3V
V
IN=9.3V
0
500 1000 1500 2000 2500 3000 3500 4000
0
500 1000 1500 2000 2500 3000 3500 4000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1151N (VR=3.3V)
R1151N (VR=2.5V)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
3.25
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
V
IN=5.3V
IN=4.3V
V
VDD=4.5V
VDD=3.5V
VDD=3.0V
VDD=2.8V
V
IN=3.8V
IN=3.6V
V
0
500 1000 1500 2000 2500 3000 3500 4000
0
500 1000 1500 2000 2500 3000 3500 4000
Output Current IOUT(mA)
Output Current IOUT(mA)
b. External Tr.:2SB940
R1151N (VR=9.0V)
R1151N (VR=5.0V)
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
6.00
5.00
4.00
3.00
2.00
1.00
V
V
V
DD=11.0V
DD=10.0V
DD=9.5V
V
DD=7.0V
DD=6.0V
V
V
DD=5.3V
DD=5.5V
V
VDD=9.3V
2.00
1.00
0.00
0.00
0
100 200 300 400 500 600 700 800 900 10001100
0
100 200 300 400 500 600 700 800 900 10001100
Output Current IOUT(mA)
Output Current IOUT(mA)
8
R1151N
R1151N (VR=3.3V)
R1151N (VR=2.5V)
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
3.00
2.50
2.00
1.50
1.00
0.50
0.00
VDD=5.3V
VDD=4.5V
V
DD=4.3V
DD=3.8V
DD=3.6V
V
DD=3.5V
DD=3.0V
V
V
V
VDD=2.8V
0
100 200 300 400 500 600 700 800 900 10001100
0
100 200 300 400 500 600 700 800 90010001100
Output Current IOUT(mA)
Output Current IOUT(mA)
c. External Tr.:2SB703
R1151N (VR=9.0V)
R1151N (VR=5.0V)
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
6.00
5.00
4.00
3.00
2.00
1.00
V
IN=11.0V
IN=10.0V
VIN=7.0V
VIN=6.0V
VIN=5.5V
V
V
IN=9.5V
V
IN=9.3V
VIN=5.3V
0.00
0
100 200 300 400 500 600 700 800 900 10001100
0
100 200 300 400 500 600 700 800 900 10001100
Output Current IOUT(mA)
Output Current IOUT(mA)
R1151N (VR=3.3V)
R1151N (VR=2.5V)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
VIN=5.3V
3.00
2.50
VIN=4.3V
V
IN=4.5V
IN=3.5V
V
IN=3.8V
IN=3.6V
V
2.00
1.50
V
V
IN=3.0V
IN=2.8V
V
1.00
0.50
0.00
0
100 200 300 400 500 600 700 800 900 10001100
0
100 200 300 400 500 600 700 800 900 10001100
Output Current IOUT(mA)
Output Current IOUT(mA)
9
R1151N
d. Output Voltage vs. Base Current (Topt=25°C)
VR=9.0V
VR=5.0V
10.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
0
2
4
6
8
10 12 14 16 18
0
2
4
6
8
10 12 14 16 18
Base Current IEXT(mA)
Base Current IEXT(mA)
VR=3.3V
VR=2.5V
3.00
4.00
3.50
3.00
2.50
2.00
1.50
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.00
0.50
0.00
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16 18
Base Current IEXT(mA)
Base Current IEXT(mA)
2) Output Voltage vs. Input Voltage (Topt=25°C)
External Transistor: 2SA1441
R1151N (VR=5.0V)
R1151N (VR=3.3V)
6.00
4.00
I
OUT=0mA
I
OUT=0mA
3.50
3.00
2.50
5.00
4.00
3.00
2.00
1.00
2.00
1.50
1.00
IOUT=500mA
IOUT=500mA
0
1
2
3
4
5
6
7 8 9 10 1112131415 16 17 18
0 1 2 3 4 5 6 7 8 9 10 1112131415 16 17 18
Input Voltage VIN(V)
Input Voltage VIN(V)
10
R1151N
R1151N (VR=2.5V)
3.00
I
OUT=0mA
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
IOUT=500mA
0
1 2 3 4 5 6 7 8 9 10 1112131415 16 17 18
Input Voltage VIN(V)
3) Output Voltage vs. Temperature
R1151N (VR=5.0V)
R1151N (VR=3.3V)
V
IN=6.0V
V
IN=4.3V
I
OUT=80mA
IOUT=80mA
5.125
5.075
5.025
4.975
3.375
3.355
3.335
3.315
3.295
3.275
3.255
3.235
3.215
4.925
4.875
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
R1151N (VR=2.5V)
V
IN=3.5V
I
OUT=80mA
2.538
2.513
2.488
2.463
2.438
-40
-15
10
35
60
85
Temperature Topt(°C)
11
R1151N
4) Supply Current vs. Input Voltage
External Tr.:2SA1441
R1151N (VR=9.0V, -VD=8.0V)
R1151N (VR=5.0V, -VD=4.2V)
IOUT=0mA
IOUT=0mA
150
140
130
120
110
100
90
150
140
130
120
110
100
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0
1
2
3
4 5
6
7
8 9 10 1112 13 1415 16 17 18
0
1
2
3
4 5
6
7
8 9 10 1112 13 1415 16 17 18
Input Voltage VIN(V)
Input Voltage VIN(V)
R1151N (VR=3.3V, -VD=2.9V)
I
OUT=0mA
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1
2
3
4 5
6
7
8 9 10 1112 13 1415 16 17 18
Input Voltage VIN(V)
5) Supply Current vs. Temperature
a. External Tr.:2SA1441
R1151N (VR=9.0V)
R1151N (VR=5.0V)
V
IN=10V
V
IN=6V
I
OUT=0mA
IOUT=0mA
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
12
R1151N
R1151N (VR=3.3V)
R1151N (VR=2.5V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
b. External Tr.:2SB703
R1151N (VR=9.0V)
R1151N (VR=5.0V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
R1151N (VR=3.3V)
R1151N (VR=2.5V)
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
13
R1151N
6) Ripple Rejection vs. Ripple Frequency (Topt=25°C)
R1151N (VR=9.0V)
R1151N (VR=5.0V)
V
IN=10Vdc+0.5Vp-p,Iout=50mA,CL=10µF
V
IN=6Vdc+0.5Vp-p, Iout=50mA, CL=10µF
80
70
60
80
70
60
2SB703
2SA1441
2SB940
2SB703
50
40
30
50
40
30
2SA1441
2SB940
20
10
0
20
10
0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Ripple Frequency (kHz)
Ripple Frequency (kHz)
R1151N (VR=3.3V)
R1151N (VR=2.5V)
V
IN=4.3Vdc+0.5Vp-p,Iout=50mA,CL=10µF
V
IN=3.5Vdc+0.5Vp-p,Iout=50mA,CL=10µF
80
70
60
70
60
50
40
30
20
10
0
2SB703
2SB703
2SA1441
2SB940
2SA1441
2SB940
50
40
30
20
10
0
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Ripple Frequency (kHz)
Ripple Frequency (kHz)
7) Ripple Rejection vs. Temperature
R1151N (VR=5.0V)
R1151N (VR=3.3V)
V
IN=6Vdc+0.5Vp-p, Iout=50mA, CL=10µF
2SA1441
2SB940
V
IN=4.3Vdc+0.5Vp-p,Iout=50mA,CL=10µF
75
73
71
69
75
73
71
69
2SB703
2SB703
67
65
63
61
59
57
55
67
65
63
61
59
57
55
2SA1441
2SB940
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
14
R1151N
R1151N (VR=2.5V)
V
IN=3.5Vdc+0.5Vp-p,Iout=50mA,CL=10µF
70
2SB940
2SB703
65
60
2SA1441
55
50
45
-40
-15
10
35
60
85
Temperature Topt(°C)
8) Input Transient Response(Topt=25°C)
a. External Tr.:2SA1441
R1151N (VR=5.0V)
R1151N (VR=3.3V)
I
OUT=50mA
I
OUT=50mA
COUT=Ceramic 10µF
COUT=Ceramic 10µF
5.030
5.020
5.010
3.340
3.330
8
7
6
5
4
3
2
1
0
6
5
Input Voltage
Input Voltage
3.320
3.310
3.300
3.290
4
3
2
1
0
Output Voltage
Output Voltage
5.000
4.990
3.280
0
25 50 75 100 125 150 175 200 225 250
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
Time (µs)
R1151N (VR=2.5V)
I
OUT=50mA
COUT=Ceramic 10µF
2.535
2.525
5
4
Input Voltage
2.515
2.505
2.495
2.485
3
2
1
0
Output Voltage
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
15
R1151N
b. External Tr.: 2SB703
R1151N (VR=5.0V)
R1151N (VR=3.3V)
I
OUT=50mA
I
OUT=50mA
COUT=Ceramic 10µF
COUT=Ceramic 10µF
5.030
3.340
8
6
5.025
5.020
5.015
5.010
5.005
5.000
4.995
7
6
5
4
3
2
1
0
3.330
3.320
3.310
3.300
3.290
5
4
3
2
1
0
Input Voltage
Input Voltage
Output Voltage
Output Voltage
4.990
3.280
0
25 50 75 100 125 150 175 200 225 250
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
Time (µs)
R1151N (VR=2.5V)
I
OUT=50mA
COUT=Ceramic 10µF
2.535
2.525
5
4
Input Voltage
2.515
2.505
2.495
2.485
3
Output Voltage
2
1
0
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
c. External Tr. : 2SB940
R1151N (VR=5.0V)
R1151N (VR=3.3V)
I
OUT=50mA
I
OUT=50mA
COUT=Ceramic 10µF
COUT=Ceramic 10µF
5.030
3.340
3.330
3.320
3.310
8
6
5
4
3
5.025
5.020
5.015
5.010
5.005
5.000
4.995
7
6
5
4
3
2
1
Input Voltage
Input Voltage
Output Voltage
Output Voltage
3.300
3.290
2
1
0
0
4.990
3.280
0
25 50 75 100 125 150 175 200 225 250
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
Time (µs)
16
R1151N
R1151N (VR=2.5V)
I
OUT=50mA
COUT=Ceramic 10µF
2.535
2.525
2.515
2.505
2.495
2.485
5
4
3
2
1
0
Input Voltage
Output Voltage
0
25 50 75 100 125 150 175 200 225 250
Time (µs)
9) Load Transient Response (Topt=25°C)
a: External Tr.: 2SA1441
R1151N (VR=5.0V)
R1151N (VR=3.3V)
VIN=6.0V
V
IN=4.3V
IN=Ceramic 4.7µF
COUT=Ceramic 10µF
C
IN=Ceramic 4.7µF
C
C
OUT=Ceramic 10µF
5.05
5.04
5.03
3.35
3.34
3.33
120
100
80
120
100
80
Output Current
Output Voltage
Output Current
Output Voltage
5.02
5.01
5.00
3.32
3.31
3.30
60
40
20
0
60
40
20
0
4.99
3.29
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
Time (µs)
R1151N (VR=2.5V)
V
IN=3.5V
IN=Ceramic 4.7µF
OUT=Ceramic 10µF
C
C
2.55
2.54
2.53
120
100
80
Output Current
Output Voltage
2.52
2.51
2.50
60
40
20
0
2.49
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
17
R1151N
b. External Tr.: 2SB703
R1151N (VR=5.0V)
R1151N (VR=3.3V)
V
IN=6.0V
IN=Ceramic 4.7µF
OUT=Ceramic 10µF
V
IN=4.3V
IN=Ceramic 4.7µF
COUT=Ceramic 10µF
C
C
C
5.05
5.04
5.03
3.35
3.34
3.33
120
100
80
120
100
80
Output Current
Output Voltage
Output Current
Output Voltage
5.02
5.01
5.00
3.32
3.31
3.30
60
40
20
0
60
40
20
0
4.99
3.29
0
100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
Time (µs)
R1151N (VR=2.5V)
V
IN=3.5V
IN=Ceramic 4.7µF
OUT=Ceramic 10µF
C
C
2.55
2.54
2.53
120
100
80
Output Current
Output Voltage
2.52
2.51
2.50
60
40
20
0
2.49
0
100 200 300 400 500 600 700 800 900 1000
Time (µs)
10) Detector Threshold vs. Temperature
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
8.70
4.60
4.50
8.60
8.50
8.40
8.30
8.20
8.10
8.00
7.90
7.80
4.40
4.30
4.20
4.10
4.00
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
18
R1151N
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
3.10
3.05
1.85
1.80
3.00
2.95
1.75
1.70
1.65
1.60
2.90
2.85
2.80
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
11) VDET Output Voltage vs. Input Voltage
R1151N (-VDET=8.0V Pull-up to VDD)
9.0
R1151N (-VDET=8.0V Pull-up to 5V)
6.00
8.0
7.0
6.0
5.0
5.00
4.00
3.00
4.0
Topt=-40°C
Topt=25°C
Topt=85°C
Topt=-40°C
3.0
2.00
1.00
0.00
Topt=25°C
Topt=85°C
2.0
1.0
0.0
0
1
2
3
4
5
6
7
8
9
0
1
2
3
4
5
6
7
8
9
Input Voltage VIN(V)
Input Voltage VIN(V)
R1151N (-VDET=4.2V Pull-up to VDD)
5.0
R1151N (-VDET=4.2V Pull-up to 5V)
6.0
4.5
4.0
3.5
3.0
2.5
5.0
4.0
3.0
Topt=-40°C
Topt=25°C
Topt=85°C
2.0
1.5
1.0
0.5
0.0
Topt=-40°C
2.0
Topt=25°C
Topt=85°C
1.0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Input Voltage VIN(V)
Input Voltage VIN(V)
19
R1151N
R1151N (-VDET=2.9V Pull-up to VDD)
4.0
R1151N (-VDET=2.9V Pull-up to 5V)
6.0
3.5
3.0
2.5
2.0
5.0
4.0
3.0
Topt=-40°C
Topt=-40°C
1.5
2.0
1.0
0.0
Topt=25°C
Topt=85°C
Topt=25°C
Topt=85°C
1.0
0.5
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Input Voltage VIN(V)
Input Voltage VIN(V)
R1151N (-VDET=1.7V Pull-up to VDD)
2.5
R1151N (-VDET=1.7V Pull-up to 5V)
6.0
2.3
2.0
1.8
1.5
1.3
5.0
4.0
3.0
1.0
Topt=-40°C
2.0
1.0
0.0
Topt=-40°C
Topt=25°C
Topt=85°C
0.8
Topt=25°C
Topt=85°C
0.5
0.3
0.0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Input Voltage VIN(V)
Input Voltage VIN(V)
12) Nch Driver Output Current vs. VDS (Topt=25°C)
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
140
60
V
DD=7.5V
V
DD=4.0V
DD=3.5V
DD=3.0V
DD=2.5V
120
100
80
60
40
20
0
V
DD=7.0V
50
40
30
20
10
0
V
DD=6.5V
DD=6.0V
DD=5.5V
DD=5.0V
DD=4.5V
DD=4.0V
DD=3.5V
V
V
V
V
V
V
V
V
V
VDD=2.0V
V
DD=3.0V
V
DD=2.0V
V
DD=2.5V
VDD=1.5V
V
V
DD=1.5V
DD=1.0V
VDD=1.0V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
VDS(V)
VDS(V)
20
R1151N
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
30
8
7
6
5
4
3
2
1
0
VDD=1.5V
V
DD=2.5V
DD=2.0V
25
20
15
10
5
V
VDD=1.25V
VDD=1.5V
VDD=1.0V
VDD=1.0V
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
VDS(V)
VDS(V)
13) Nch Driver Output Current vs. Input Voltage
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
40
40
35
30
25
20
Topt=85°C
Topt=25°C
35
30
25
20
Topt=85°C
Topt=25°C
Topt=-40°C
Topt=-40°C
15
10
5
15
10
5
0
0
0
2
4
6
8
10
0
1
2
3
4
5
Input Voltage VIN(V)
Input Voltage VIN(V)
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
40
35
30
25
20
40
35
30
25
20
Topt=85°C
Topt=25°C
Topt=85°C
Topt=25°C
Topt=-40°C
15
10
5
15
10
5
Topt=-40°C
0
0
0
1
2
3
4
0
0.5
1
1.5
2
2.5
Input Voltage VIN(V)
Input Voltage VIN(V)
21
R1151N
14) CD pin Threshold Voltage vs. Temperature
R1151N (-VDET=8.0V)
R1151N (-VDET=1.7V)
3.0
3.0
2.8
2.6
2.4
2.2
2.0
2.8
2.6
2.4
2.2
2.0
L→H
H→L
L→H
H→L
1.8
1.6
1.4
1.2
1.0
1.8
1.6
1.4
1.2
1.0
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
15) CD Pin Output Current vs. Input Voltage
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
0.45
0.45
0.40
0.35
0.40
Topt=-40°C
Topt=25°C
Topt=-40°C
0.35
Topt=25°C
0.30
0.30
0.25
0.20
0.15
0.10
0.25
Topt=85°C
0.20
0.15
0.10
0.05
0.00
Topt=85°C
0.05
0.00
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN(V)
Input Voltage VIN(V)
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
0.45
0.40
0.35
0.45
0.40
0.35
Topt=-40°C
Topt=25°C
0.30
0.25
0.20
0.15
0.10
0.30
0.25
0.20
0.15
0.10
Topt=85°C
Topt=-40°C
Topt=25°C
Topt=85°C
0.05
0.00
0.05
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Input Voltage VIN(V)
Input Voltage VIN(V)
22
R1151N
16) CD Pin Output Current vs. VDS (Topt=25°C)
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
6
2.5
2.0
1.5
V
V
DD=4.0V
V
DD=7.5V
5
4
3
2
V
DD=7.0V
V
V
DD=6.5V
DD=3.5V
V
DD=6.0V
DD=5.5V
DD=5.0V
DD=4.5V
DD=4.0V
DD=3.5V
V
V
DD=3.0V
V
V
1.0
0.5
0
V
V
DD=2.5V
DD=2.0V
DD=1.5V
2.5
DS(V)
V
DD=3.0V
V
1
0
V
DD=2.5V
DD=2.0V
V
V
V
5
DD=1.5V
0
1
2
3
4
6
7
8
9
0
0.5
1
1.5
2
3
3.5
4
4.5
5
V
DS(V)
V
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
0.20
VDD=1.5V
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
V
DD=2.4V
V
DD=2.0V
VDD=1.2V
V
DD=1.5V
0
0.5
1
1.5
DS(V)
2
2.5
3
0
0.25 0.5 0.75
1
1.25 1.5 1.75
V
VDS(V)
17) Output Delay Time of Release vs. Temperature
R1151N (-VDET=8.0V)
External Capacitance=220pF
3.00
R1151N (-VDET=1.7V)
External Capacitance=220pF
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-40
-15
10
35
60
85
-40
-15
10
35
60
85
Temperature Topt(°C)
Temperature Topt(°C)
23
R1151N
18) Output Delay Time of Release vs. External Capacitance for CD pin (Topt=25°C)
R1151N (-VDET=8.0V)
R1151N (-VDET=1.7V)
100
10
1
100
10
1
0.1
0.1
10
100
1000
10
100
1000
External Capacitance for CD pin CD(pF)
External Capacitance for CD pin CD(pF)
19) Output Delay Time of Detect vs. External Capacitance for CD pin (Topt=25°C)
R1151N (-VDET=8.0V)
R1151N (-VDET=4.2V)
10
10
1
1
10
100
1000
10
100
1000
External Capacitance for CD pin CD(pF)
External Capacitance for CD pin CD(pF)
R1151N (-VDET=2.9V)
R1151N (-VDET=1.7V)
10
10
1
1
10
100
1000
10
100
1000
External Capacitance for CD pin CD(pF)
External Capacitance for CD pin CD(pF)
24
R1151N
Calculation of Output Delay Time of Release
tPLH(s)=1.83×C/(300×10-9)
tPHL vs. Capacitance
30
25
20
15
10
Measured value
Calculated value
5
0
0
1000
2000
3000
4000
5000
External Capacitance for CD pin (pF)
For Stable Operation
Phase Compensation
In these ICs, phase compensation is externally made for securing stable operation even if the load current is varied.
For this purpose, be sure to use a capacitor for the output pin with good frequency characteristics and ESR (Equivalent
Series Resistance) of which is in the range described as follows:
V
DET
CD
EXT
R1151NxxxxC
GND
V
IN
Ceramic
Capacitor
4.7µF
V
OUT
Ceramic
Capacitance
10µF
Spectrum
Analyser
V
IN
S.A.
ESR
I
OUT
Measuring Circuit for white noise; R1151NxxxC
The relations between IOUT (Output Current) and ESR of Output Capacitor are shown below. The conditions when the
white noise level is under 40µV (Avg.) are marked as the hatched area in the graph.
<Measurement conditions>
(1) VIN=VOUT+1V
(2) Frequency band: 10Hz to 1MHz
(3) Temperature: 25°C
(4) COUT: Ceramic 10µF; ESR=0.075Ω (10kHz)
25
R1151N
VR=2.5V (2SA1441)
VR=9.0V (2SA1441)
100
100
10
10
1
1
0.1
0.01
0.1
0.01
0
0
0
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
0
0
0
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
VR=2.5V (2SB703)
VR=9.0V (2SB703)
100
10
100
10
1
1
0.1
0.01
0.1
0.01
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
VR=2.5V (2SB940)
VR=9.0V (2SB940)
100
10
100
10
1
1
0.1
0.01
0.1
0.01
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
50 100 150 200 250 300 350 400 450 500
Output Current IOUT(mA)
26
1.The products and the product specifications described in this document are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before
deciding to use the products, please refer to Ricoh sales representatives for the latest
information thereon.
2.The materials in this document may not be copied or otherwise reproduced in whole or in part
without prior written consent of Ricoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before
exporting or otherwise taking out of your country the products or the technical information
described herein.
4.The technical information described in this document shows typical characteristics of and
example application circuits for the products. The release of such information is not to be
construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual
property rights or any other rights.
5.The products listed in this document are intended and designed for use as general electronic
components in standard applications (office equipment, telecommunication equipment,
measuring instruments, consumer electronic products, amusement equipment etc.). Those
customers intending to use a product in an application requiring extreme quality and reliability,
for example, in a highly specific application where the failure or misoperation of the product
could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system,
traffic control system, automotive and transportation equipment, combustion equipment, safety
devices, life support system etc.) should first contact us.
6.We are making our continuous effort to improve the quality and reliability of our products, but
semiconductor products are likely to fail with certain probability. In order to prevent any injury to
persons or damages to property resulting from such failure, customers should be careful enough
to incorporate safety measures in their design, such as redundancy feature, firecontainment
feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7.Anti-radiation design is not implemented in the products described in this document.
8.Please contact Ricoh sales representatives should you have any questions or comments
concerning the products or the technical information.
RICOH COMPANY,LTD. Electronic Devices Company
■Ricoh awarded ISO 14001 certification.
■
Ricoh presented with the Japan Management Quality Award for 1999.
The Ricoh Group was awarded ISO 14001 certification, which is an international standard for
environmental management systems, at both its domestic and overseas production facilities.
Our current aim is to obtain ISO 14001 certification for all of our business offices.
Ricoh continually strives to promote customer satisfaction, and shares the achievements
of its management quality improvement program with people and society.
Ricoh completed the organization of the Lead-free production for all of our products.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that
will be shipped from now on comply with RoHS Directive.
http://www.ricoh.com/LSI/
RICOH COMPANY, LTD.
Electronic Devices Company
● Higashi-Shinagawa Office (International Sales)
3-32-3, Higashi-Shinagawa, Shinagawa-ku, Tokyo 140-8655, Japan
Phone: +81-3-5479-2857 Fax: +81-3-5479-0502
RICOH EUROPE (NETHERLANDS) B.V.
● Semiconductor Support Centre
Prof. W.H.Keesomlaan 1, 1183 DL Amstelveen, The Netherlands
P.O.Box 114, 1180 AC Amstelveen
Phone: +31-20-5474-309 Fax: +31-20-5474-791
RICOH ELECTRONIC DEVICES KOREA Co., Ltd.
11 floor, Haesung 1 building, 942, Daechidong, Gangnamgu, Seoul, Korea
Phone: +82-2-2135-5700 Fax: +82-2-2135-5705
RICOH ELECTRONIC DEVICES SHANGHAI Co., Ltd.
Room403, No.2 Building, 690#Bi Bo Road, Pu Dong New district, Shanghai 201203,
People's Republic of China
Phone: +86-21-5027-3200 Fax: +86-21-5027-3299
RICOH COMPANY, LTD.
Electronic Devices Company
● Taipei office
Room109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.)
Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623
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