R1211N002C-TR-FB [RICOH]
Switching Controller, 0.05A, 805kHz Switching Freq-Max, CMOS, PDSO6, SOT-23, 6 PIN;
| 型号： | R1211N002C-TR-FB |
| 厂家： | 
RICOH ELECTRONICS DEVICES DIVISION |
| 描述： | Switching Controller, 0.05A, 805kHz Switching Freq-Max, CMOS, PDSO6, SOT-23, 6 PIN ISM频段 开关 光电二极管 |
| 文件： | 总40页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R1211x SERIES
STEP-UP DC/DC CONTROLLER
OUTLINE
NO.EA-088-0604
The R1211x Series are CMOS-based PWM step-up DC/DC converter controllers with low supply current.
Each of the R1211x Series consists of an oscillator, a PWM control circuit, a reference voltage unit, an error
amplifier, a reference current unit, a protection circuit, and an under voltage lockout (UVLO) circuit. A low ripple,
high efficiency step-up DC/DC converter can be composed of this IC with some external components, or an
inductor, a diode, a power MOSFET, divider resisters, and capacitors.
Phase compensation has been made internally in the R1211x002B/D Series, while phase compensation can
be made externally as for R1211x002A/C Series. B/D version has stand-by mode.
Max duty cycle is internally fixed typically at 90%. Soft start function is built-in, and Soft-starting time is set
typically at 9ms(A/B, 700kHz version) or 10.5ms(C/D, 300kHz version). As for the protection circuit, after the
soft-starting time, if the maximum duty cycle is continued for a certain period, the R1211x Series latch the
external driver with its off state, or Latch-type protection circuit works.
The delay time for latch the state can be set with an external capacitor.
To release the protection circuit, restart with power-on (Voltage supplier is equal or less than UVLO detector
threshold level), or once after making the circuit be stand-by with chip enable pin and enable the circuit again.
FEATURES
• Standby Current................................................Typ. 0µA (for B/D version)
• Input Voltage Range .........................................2.5V to 6.0V
• Built-in Latch-type Protection Function (Output Delay Time can be set with an external capacitor)
• Two Options of Basic Oscillator Frequency......300kHz, 700kHz
• Max Duty Cycle.................................................Typ. 90%
• High Reference Voltage Accuracy ....................±1.5%
• U.V.L.O. Threshold level ...................................Typ. 2.2V (Hysteresis Typ. 0.13V)
• Small Packages ................................................SOT-23-6W or thin (package height Max. 0.85mm) SON-6
APPLICATIONS
• Constant Voltage Power Source for portable equipment.
• Constant Voltage Power Source for LCD and CCD.
1
R1211x
BLOCK DIAGRAMS
Version A/C
Version B/D
OSC
OSC
VFB
EXT
DTC
DTC
V
FB
EXT
V
IN
AMPOUT
+
-
+
-
-
-
V
IN
-
-
-
-
Vref
+
Vref
+
GND
GND
UVLO
UVLO
+
+
-
DELAY
DELAY
-
+
-
+
-
Latch
Latch
Chip
Enable
CE
SELECTION GUIDE
In the R1211x Series, the oscillator frequency, the optional function, and the package type for the ICs can be
selected at the user's request.
The selection can be made with designating the part number as shown below;
R1211x002x-TR ←Part Number
↑
↑
a
b
Code
Contents
Designation of Package Type:
D: SON-6
a
N: SOT23-6W
Designation of Optional Function
A : 700kHz, with AMPOUT pin (External Phase Compensation Type)
B : 700kHz, with CE pin (Internal Phase Compensation Type, with Stand-by)
C : 300kHz, with AMPOUT pin (External Phase Compensation Type)
D : 300kHz, with CE pin (Internal Phase Compensation Type, with Stand-by)
b
2
R1211x
PIN CONFIGURATIONS
SON-6
SOT-23-6W
6
5
4
Top View
Bottom View
6
5
4
4
5
6
EXT
GND
V
IN
(MARK SIDE)
DELAY AMPOUT/CE
V
FB
1
2
3
3
2
1
1
2
3
PIN DESCRIPTIONS
Pin No
Symbol
Pin Description
SON6
SOT23-6W
Pin for External Capacitor
(for Setting Output Delay of Protection)
1
1
DELAY
2
3
4
5
5
6
4
3
GND
EXT
VIN
Ground Pin
External FET Drive Pin (CMOS Output)
Power Supply Pin
VFB
Feedback Pin for monitoring Output Voltage
Amplifier Output Pin(A/C Version) or
Chip Enable Pin(B/D Version, Active at "H")
6
2
AMPOUT or CE
* Tab in the
parts have GND level. (They are connected to the reverse side of this IC.)
Do not connect to other wires or land patterns.
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
6.5
Unit
V
VIN
VIN Pin Voltage
VEXT
VDLY
VAMP
VCE
EXT Pin Output Voltage
DELAY Pin Voltage
V
−0.3 ~ VIN+0.3
−0.3 ~ VIN+0.3
−0.3 ~ VIN+0.3
−0.3 ~ VIN+0.3
−0.3 ~ VIN+0.3
±10
V
AMPOUT Pin Voltage
V
CE Pin Input Voltage
V
VFB
VFB Pin Voltage
V
IAMP
AMPOUT Pin Current
mA
mA
IEXT
EXT Pin Inductor Drive Output Current
Power Dissipation (SOT-23-6W)*
Power Dissipation (SON-6)*
Operating Temperature Range
Storage Temperature Range
±50
430
PD
500
mW
°C
Topt
Tstg
−40 ~ +85
−55 ~ +125
°C
* ) For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
3
R1211x
ELECTRICAL CHARACTERISTICS
• R1211x002A
Topt=25°C
Symbol
VIN
Item
Conditions
Min.
2.5
Typ.
Max.
6.0
Unit
Operating Input Voltage
VFB Voltage Tolerance
V
V
VFB
0.985
1.000
1.015
VIN=3.3V
−40°C Topt 85°C
VFB Voltage
∆VFB/∆T
±150
ppm/°C
=
=
Temperature Coefficient
IFB
VFB Input Current
0.1
VIN=6V, VFB=0V or 6V
VIN=3.3V, VDLY=VFB=0V
−0.1
µA
fOSc
Oscillator Frequency
595
700
805
kHz
Oscillator Frequency
Temperature Coefficient
∆fOSc/∆T
IDD1
−40°C Topt 85°C
±1.4
kHz/°C
µA
=
=
VIN=6V, VDLY=VFB=0V,
EXT at no load
Supply Current 1
600
90
900
94
VIN=3.3V,
EXT "H" side
maxdty
Maximum Duty Cycle
82
%
REXTH
REXTL
IDLY1
EXT "H" ON Resistance
EXT "L" ON Resistance
Delay Pin Charge Current
5
3
10
6
VIN=3.3V, IEXT=−20mA
VIN=3.3V, IEXT=20mA
VIN=3.3V, VDLY=VFB=0V
Ω
Ω
2.5
2.5
5.0
7.5
µA
VIN=VFB=2.5V,
VDLY=0.1V
IDLY2
VDLY
Delay Pin Discharge Current
Delay Pin Detector Threshold
Soft-start Time
5.5
1.00
9.0
9.0
1.05
13.5
2.3
mA
V
VIN=3.3V,
VFB=0V,VDLY=0V→2V
0.95
4.5
VIN=3.3V at 90% of
rising edge
TSTART
VUVLO1
VUVLO2
IAMP1
ms
V
VIN=3.3V→0V,
VDLY=VFB=0V
UVLO Detector Threshold
UVLO Detector Hysteresis
AMP "H" Output Current
AMP "L" Output Current
2.1
2.2
VIN=0V→3.3V,
VDLY=VFB=0V
0.08
0.45
30
0.13
0.90
60
0.18
1.50
90
V
VIN=3.3V, VAMP=1V,
VFB=0.9V
mA
µA
VIN=3.3V, VAMP=1V,
VFB=1.1V
IAMP2
4
R1211x
• R1211x002B
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VIN
Operating Input Voltage
VFB Voltage Tolerance
2.5
6.0
V
V
VFB
0.985 1.000 1.015
VIN=3.3V
−40°C Topt 85°C
VFB Voltage
Temperature Coefficient
∆VFB/∆T
±150
ppm/°C
=
=
IFB
VFB Input Current
0.1
VIN=6V, VFB=0V or 6V
VIN=3.3V, VDLY=VFB=0V
−0.1
µA
fOSC
Oscillator Frequency
595
700
805
kHz
Oscillator Frequency
Temperature Coefficient
∆fOSC/ ∆T
−40°C Topt 85°C
±1.4
kHz/°C
µA
=
=
VIN=6V, VDLY=VFB=0V,
EXT at no load
IDD1
Supply Current 1
600
900
maxdty
REXTH
REXTL
IDLY1
Maximum Duty Cycle
82
90
5
94
10
6
%
Ω
VIN=3.3V, EXT "H" side
VIN=3.3V, IEXT=−20mA
VIN=3.3V, IEXT=20mA
EXT "H" ON Resistance
EXT "L" ON Resistance
Delay Pin Charge Current
Delay Pin Discharge Current
3
Ω
2.5
2.5
5.0
5.5
7.5
9.0
VIN=3.3V, VDLY=VFB=0V
VIN=VFB=2.5V, VDLY=0.1V
µA
mA
IDLY2
VIN=3.3V, VFB=0V,
VDLY=0V→2V
VDLY
Delay Pin Detector Threshold
Soft-start Time
0.95
4.5
1.00
9.0
1.05
13.5
2.3
V
ms
V
TSTART
VUVLO1
VIN=3.3V
VIN=3.3V→0V,
VDLY=VFB=0V
UVLO Detector Threshold
2.1
2.2
VIN=0V→3.3V,
VDLY=VFB=0V
VUVLO2
UVLO Detector Hysteresis
0.08
0.13
0
0.18
V
ISTB
ICEH
ICEL
Standby Current
1
VIN=6V, VCE=0V
µA
µA
µA
V
CE "H" Input Current
CE "L" Input Current
CE "H" Input Voltage
CE "L" Input Voltage
0.5
0.5
VIN=6V, VCE=6V
−0.5
−0.5
1.5
VIN=6V, VCE=0V
VCEH
VCEL
VIN=6V, VCE=0V→6V
VIN=2.5V, VCE=2V→0V
0.3
V
5
R1211x
• R1211x002C
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VIN
Operating Input Voltage
VFB Voltage Tolerance
2.5
6.0
V
V
VFB
0.985 1.000 1.015
VIN=3.3V
−40°C Topt 85°C
VFB Voltage
Temperature Coefficient
ppm/°C
∆VFB/∆T
±150
=
=
IFB
VFB Input Current
0.1
VIN=6V, VFB=0V or 6V
VIN=3.3V, VDLY=VFB=0V
−0.1
µA
fOSC
Oscillator Frequency
240
300
360
kHz
Oscillator Frequency
Temperature Coefficient
kHz/°C
∆fOSC/∆T
−40°C Topt 85°C
±0.6
=
=
VIN=6V, VDLY=VFB=0V,
EXT at no load
IDD1
Supply Current 1
300
500
µA
maxdty
REXTH
REXTL
IDLY1
Maximum Duty Cycle
82
90
5
94
10
6
%
Ω
VIN=3.3V, EXT "H" side
VIN=3.3V, IEXT=−20mA
VIN=3.3V, IEXT=20mA
VIN=3.3V, VDLY=VFB=0V
VIN=VFB=2.5V, VDLY=0.1V
EXT "H" ON Resistance
EXT "L" ON Resistance
Delay Pin Charge Current
Delay Pin Discharge Current
3
Ω
2.0
2.5
4.5
5.5
7.0
9.0
µA
mA
IDLY2
VIN=3.3V, VFB=0V,
VDLY=0V→2V
VDLY
Delay Pin Detector Threshold
Soft-start Time
0.95
5.0
1.00
10.5
2.2
1.05
16.0
2.3
V
ms
V
TSTART
VUVLO1
VIN=3.3V
VIN=3.3V→0V,
VDLY=VFB=0V
UVLO Detector Threshold
2.1
VIN=0V→3.3V,
VDLY=VFB=0V
VUVLO2
IAMP1
UVLO Detector Hysteresis
AMP "H" Output Current
AMP "L" Output Current
0.08
0.45
25
0.13
0.90
50
0.18
1.50
75
V
VIN=3.3V, VAMP=1V,
VFB=0.9V
mA
µA
VIN=3.3V, VAMP=1V,
VFB=1.1V
IAMP2
6
R1211x
• R1211x002D
Topt=25°C
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
VIN
Operating Input Voltage
VFB Voltage Tolerance
2.5
6.0
V
V
VFB
0.985 1.000 1.015
VIN=3.3V
−40°C Topt 85°C
VFB Voltage
Temperature Coefficient
∆VFB/∆T
±150
ppm/°C
=
=
IFB
VFB Input Current
0.1
VIN=6V, VFB=0V or 6V
VIN=3.3V, VDLY=VFB=0V
−0.1
µA
fOSC
Oscillator Frequency
240
300
360
kHz
Oscillator Frequency
Temperature Coefficient
∆fOSC/∆T
−40°C Topt 85°C
±0.6
kHz/°C
µA
=
=
VIN=6V, VDLY=VFB=0V,
EXT at no load
IDD1
Supply Current 1
300
500
maxdty
REXTH
REXTL
IDLY1
Maximum Duty Cycle
82
90
5
94
10
6
%
Ω
VIN=3.3V, EXT "H" side
VIN=3.3V, IEXT=−20mA
VIN=3.3V, IEXT=20mA
VIN=3.3V, VDLY=VFB=0V
VIN=VFB=2.5V, VDLY=0.1V
EXT "H" ON Resistance
EXT "L" ON Resistance
Delay Pin Charge Current
Delay Pin Discharge Current
3
Ω
2.0
2.5
4.5
5.5
7.0
9.0
µA
mA
IDLY2
VIN=3.3V, VFB=0V,
VDLY=0V→2V
VDLY
Delay Pin Detector Threshold
Soft-start Time
0.95
5.0
1.00
10.5
2.2
1.05
16.0
2.3
V
ms
V
TSTART
VUVLO1
VIN=3.3V
VIN=3.3V→0V,
VDLY=VFB=0V
UVLO Detector Threshold
2.1
VIN=0V→3.3V,
VDLY=VFB=0V
VUVLO2
UVLO Detector Hysteresis
0.08
0.13
0
0.18
V
ISTB
ICEH
ICEL
Standby Current
1
VIN=6V, VCE=0V
µA
µA
µA
V
CE "H" Input Current
CE "L" Input Current
CE "H" Input Voltage
CE "L" Input Voltage
0.5
0.5
VIN=6V, VCE=6V
−0.5
−0.5
1.5
VIN=6V, VCE=0V
VCEH
VCEL
VIN=6V, VCE=0V→6V
VIN=2.5V, VCE=2V→0V
0.3
V
7
R1211x
TYPICAL APPLICATIONS AND TECHNICAL NOTES
<R1211x002A/R1211x002C>
Inductor
Diode
VOUT
NMOS
C4
V
IN
EXT
R1
C3
DELAY
C1
V
FB
C2
R3
R2
AMPOUT
GND
C5 R4
NMOS : IRF7601 (International Rectifier)
Inductor : LDR655312T-100 10
: LDR655312T-220 22
µ
µ
H (TDK) for R1211x002A
H (TDK) for R1211x002C
Diode
: CRS02 (Toshiba)
C1 : 4.7
C2 : 0.22
µ
F (Ceramic)
R1 : Output Voltage Setting Resistor 1
R2 : Output Voltage Setting Resistor 2
µF (Ceramic)
C3 : 10 F (Ceramic)
C4 : 680pF (Ceramic)
µ
R3 : 30k
R4 : 30k
Ω
Ω
C5 : 2200pF (Ceramic)
<R1211x002B/R1211x002D>
Inductor
Diode
VOUT
NMOS
V
IN
EXT
C4
R1
C3
C1
DELAY
GND
VFB
R3
C2
R2
CE
CE Control
NMOS : IRF7601 (International Rectifier)
Inductor : LDR655312T-100 10
: LDR655312T-220 22
µ
µ
H (TDK) for R1211x002B
H (TDK) for R1211x002D
Diode
: CRS02 (Toshiba)
C1 : 4.7
µ
F (Ceramic)
R1 : Setting Output Voltage Resistor 1
R2 : Setting Output Voltage Resistor 2
R3 : 30kΩ
C2 : 0.22
C3 : 10 F (Ceramic)
C4 : 680pF (Ceramic)
µF (Ceramic)
µ
[Note]
These example circuits may be applied to the output voltage requirement is 15V or less. If the output voltage
requirement is 15V or more, ratings of NMOS and diode as shown above is over the limit, therefore, choose
other external components.
8
R1211x
Use a 1µF or more capacitance value of bypass capacitor between VIN pin and GND, C1 as shown in the
typical applications above.
• In terms of the capacitor for setting delay time of the latch protection, C2 as shown in typical applications of
the previous page, connect between Delay pin and GND pin of the IC with the minimum wiring distance.
• Connect a 1µF or more value of capacitor between VOUT and GND, C3 as shown in typical applications of the
previous page. (Recommended value is from 10µF to 22µF.) If the operation of the composed DC/DC
converter may be unstable, use a tantalum type capacitor instead of ceramic type.
• Connect a capacitor between VOUT and the dividing point, C4 as shown in typical applications of the previous
page. The capacitance value of C4 depends on divider resistors for output voltage setting. Typical value is
between 100pF and 1000pF.
• Output Voltage can be set with divider resistors for voltage setting, R1 and R2 as shown in typical
applications of the previous page. Refer to the next formula.
Output Voltage = VFB × (R1+R2)/R2
R1+R2=100kΩ is recommended range of resistances.
• The operation of Latch protection circuit is as follows: When the IC detects maximum duty cycle, charge to
an external capacitor, C2 of DELAY pin starts. And maximum duty cycle continues and the voltage of DELAY
pin reaches delay voltage detector threshold, VDLY, outputs "L" to EXT pin and turns off the external power
MOSFET.
To release the latch protection operation, make the IC be standby mode with CE pin and make it active in
terms of B/D version. Otherwise, restart with power on.
The delay time of latch protection can be calculated with C2, VDLY, and Delay Pin Charge Current, IDLY1, as in
the next formula.
t=C2×VDLY/IDLY1
Once after the maximum duty is detected and released before delay time, charge to the capacitor is halt and
delay pin outputs "L".
• As for R1211x002A/C version, the values and positioning of C4, C5, R3, and R4 shown in the above diagram
are just an example combination. These are for making phase compensation. If the spike noise of VOUT may
be large, the spike noise may be picked into VFB pin and make the operation unstable. In this case, a resistor
R3, shown in typical applications of the previous page. The recommended resistance value of R3 is in the
range from 10kΩ to 50kΩ. Then, noise level will be decreased.
• As for R1211x002B/D version, EXT pin outputs GND level at standby mode.
• Select the Power MOSFET, the diode, and the inductor within ratings (Voltage, Current, Power) of this IC.
Choose the power MOSFET with low threshold voltage depending on Input Voltage to be able to turn on the
FET completely. Choose the diode with low VF such as Shottky type with low reverse current IR, and with fast
switching speed. When an external transistor is switching, spike voltage may be generated caused by an
inductor, therefore recommended voltage tolerance of capacitor connected to VOUT is three times of setting
voltage or more.
∗ The performance of power circuit with using this IC depends on external components. Choose the most
suitable components for your application.
9
R1211x
Output Current and Selection of External Components
<Basic Circuit>
i2
Inductor
i1
Diode
I
OUT
VIN
VOUT
LX Tr CL
GND
<Circuit through L>
Discontinuous Mode
Continuous Mode
IL
ILxmax
IL
ILxmax
ILxmin
ILxmin
Tf
Iconst
t
t
Ton
T=1/fosc
Toff
Ton
T=1/fosc
Toff
There are two modes, or discontinuous mode and continuous mode for the PWM step-up switching regulator
depending on the continuous characteristic of inductor current.
During on time of the transistor, when the voltage added on to the inductor is described as VIN, the current is
VIN×t/L. Therefore, the electric power, PON, which is supplied with input side, can be described as in next formula.
Ton
2
PON = V IN × t/L dt .............................................................................................................................. Formula 1
∫
0
With the step-up circuit, electric power is supplied from power source also during off time. In this case, input
current is described as (VOUT − VIN) ×t/L, therefore electric power, POFF is described as in next formula.
POFF = Tf VIN ×(VOUT − VIN)× t/L dt ........................................................................................................ Formula 2
0
∫
In this formula, Tf means the time of which the energy saved in the inductance is being emitted. Thus average
electric power, PAV is described as in the next formula.
2
PAV = 1/(TON + TOFF)× { TonVIN × t/L dt + Tf VIN ×(VOUT − VIN)× t/L dt} ................................................... Formula 3
0
0
∫
∫
In PWM control, when Tf = Toff is true, the inductor current becomes continuos, then the operation of
switching regulator becomes continuous mode.
In the continuous mode, the deviation of the current is equal between on time and off time.
V
IN ×TON/L = (VOUT − VIN)× Toff/L ................................................................................................... Formula 4
Further, the electric power, PAV is equal to output electric power, VOUT × IOUT, thus,
2
2
2
IOUT = fOSC × VIN ×TON /
{
2×L×(VOUT − VIN)
}
= VIN ×TON/(2×L× VOUT) .................................................... Formula 5
10
R1211x
When IOUT becomes more than formula 5, the current flows through the inductor, then the mode becomes
continuous. The continuous current through the inductor is described as Iconst, then,
2
2
IOUT = fOSC × VIN ×TON / 2×L×(VOUT − VIN) + VIN ×Iconst/VOUT ...............................................................Formula 6
{ }
In this moment, the peak current, ILxmax flowing through the inductor and the driver Tr. is described as
follows:
ILxmax = Iconst + VIN×TON/L .................................................................................................................Formula 7
With the formula 4,6, and ILxmax is,
ILxmax = VOUT/VIN ×IOUT + VIN ×TON/(2×L) ..............................................................................................Formula 8
Therefore, peak current is more than IOUT. Considering the value of ILxmax, the condition of input and output,
and external components should be selected.
In the formula 7, peak current ILxmax at discontinuous mode can be calculated. Put Iconst=0 in the formula.
The explanation above is based on the ideal calculation, and the loss caused by Lx switch and external
components is not included. The actual maximum output current is between 50% and 80% of the calculation.
Especially, when the ILx is large, or VIN is low, the loss of VIN is generated with the on resistance of the switch. As
for VOUT, Vf (as much as 0.3V) of the diode should be considered.
11
R1211x
TIMING CHART
• R1211x002A/R1211x002C
DTC
SS
VREF
-
+
-
EXT
-
-
V
OUT
AMPOUT
VFB
+
R1
EXT
PWM Comparator
OP AMP
R2
• R1211x002B/R1211x002D
DTC
SS
V
REF
-
-
+
+
-
EXT
V
OUT
AMPOUT
-
V
FB
R1
EXT
PWM Comparator
R2
OP AMP
<Soft-start Operation>
Soft-start operation is starting from power-on as follows:
(Step1)
The voltage level of SS is rising gradually by constant current circuit of the IC and a capacitor. VREF level which
is input to OP AMP is also gradually rising. VOUT is rising up to input voltage level just after the power-on,
therefore, VFB voltage is rising up to the setting voltage with input voltage and the ration of R1 and R2. AMPOUT
is at "L", and switching does not start.
(Step2)
When the voltage level of SS becomes the setting voltage with the ration of R1 and R2 or more, switching
operation starts. VREF level gradually increases together with SS level. VOUT is also rising with balancing VREF and
VFB. Duty cycle depends on the lowest level among AMPOUT, SS, and DTC of the 4 input terminals in the PWM
comparator.
12
R1211x
(Step3)
When SS reaches 1V, soft-start operation finishes. VREF becomes constant voltage (=1V). Then the switching
operation becomes normal mode.
SS
SS,VREF
VFB
VFB,VREF
DTC
AMPOUT
AMPOUT
Step2
Step1
Step3
V
V
OUT
IN
<Latch Protection Operation>
The operation of Latch protection circuit is as follows: When AMPOUT becomes "H" and the IC detects
maximum duty cycle, charge to an external capacitor, C2 of DELAY pin starts. And maximum duty cycle
continues and the voltage of DELAY pin reaches delay voltage detector threshold, VDLY, outputs "L" to EXT pin
and turns off the external power MOSFET.
To release the latch protection operation, make the IC be standby mode with CE pin and make it active in
terms of R1211x002B/D version. Otherwise, make supply voltage down to UVLO detector threshold or lower,
and make it rise up to the normal input voltage.
During the soft-start time, if the duty cycle may be the maximum, protection circuit does not work and DELAY
pin is fixed at GND level.
The delay time of latch protection can be calculated with C2, VDLY, and Delay Pin Charge Current, IDLY1, as in
the next formula.
t=C2 × VDLY/IDLY1
Once after the maximum duty is detected and released before delay time, charge to the capacitor is halt and
delay pin outputs "L".
Output Short
AMPOUT
AMPOUT
VDLY
DTC
DELAY
Normal
Maxduty Operation
Latched
EXT
13
R1211x
TEST CIRCUITS
• R1211x002A/R1211x002C
∗Oscillator Frequency,
Maximum Duty Cycle, VFB Voltage Test
∗Consumption Current Test
6V
3.3V
V
IN
A
VIN
EXT
OSCILLOSCOPE
VFB
V
FB
DELAY
GND
DELAY
GND
∗EXT "H" ON Resistance
∗EXT "L" ON Resistance
3.3V
3.3V
V
IN
EXT
VIN
EXT
150Ω
OSCILLOSCOPE
150Ω
V
V
FB
VFB
DELAY
DELAY
GND
GND
∗DELAY Pin Charge Current
∗DELAY Pin Discharge Current
2.5V
3.3V
V
IN
VIN
V
FB
VFB
DELAY
GND
A
DELAY
GND
A
0.1V
14
R1211x
∗DELAY Pin Detector Threshold Voltage Test
∗AMP "H" Output Current/"L"
Output Current Test
3.3V
3.3V
V
IN
EXT
VIN
OSCILLOSCOPE
AMPOUT
A
1V
V
FB
VFB
0.9V/1.1V
DELAY
DELAY
GND
GND
∗UVLO Detector Threshold/Hysteresis Range Test
V
IN
EXT
OSCILLOSCOPE
V
FB
DELAY
GND
∗Soft-start Time Test
Diode
Coil
V
OUT
C5
C2
OSCILLOSCOPE
Rout
NMOS
VIN
EXT
AMPOUT
C1
R1
R2
R4
C3
C4
V
FB
R3
DELAY
GND
<Components>
Inductor (L)
Diode (SD)
: 22µH (TDK LDR655312T-220)
: CRS02 (Toshiba)
Capacitors
C1:680pF(Ceramic), C2:22µF (Tantalum)+2.2µF (Ceramic),
C3:68µF (Tantalum)+2.2µF (Ceramic), C4:2200pF(Ceramic), C5:22µF(Tantalum)
: IRF7601 (International Rectifier)
NMOS Transistor
Resistors
: R1: 90kΩ, R2:10kΩ, R3:30kΩ, R4:30kΩ, Rout:1kΩ/330Ω
15
R1211x
• R1211x002B/R1211x002D
∗Oscillator Frequency,
∗Consumption Current Test
Maximum Duty Cycle, VFB Voltage Test
6V
3.3V
V
IN
A
VIN
EXT
CE
CE
OSCILLOSCOPE
VFB
V
FB
DELAY
GND
DELAY
GND
∗EXT "H" ON Resistance
∗EXT "L" ON Resistance
3.3V
3.3V
V
IN
EXT
CE
VIN
EXT
CE
150Ω
OSCILLOSCOPE
150Ω
V
VFB
VFB
DELAY
DELAY
GND
GND
∗DELAY Pin Charge Current
∗DELAY Pin Discharge Current
3.3V
2.5V
VIN
VIN
CE
CE
VFB
VFB
DELAY
DELAY
GND
GND
A
A
0.1V
∗DELAY Pin Detector Threshold Voltage Test
∗Standby Current Test
6V
3.3V
V
IN
A
VIN
EXT
CE
CE
OSCILLOSCOPE
VFB
VFB
DELAY
GND
DELAY
GND
16
R1211x
∗UVLO Detector Threshold/
∗ CE "L" Input Current/"H" Input Current Test
Hysteresis Range Test
6V
VIN
VIN
EXT
CE
OSCILLOSCOPE
CE
A
0V/6V
VFB
VFB
DELAY
DELAY
GND
GND
∗CE "L" Input Voltage/"H" Input Voltage Test
2.5V/6V
V
IN
EXT
CE
OSCILLOSCOPE
V
FB
DELAY
GND
∗Soft-start Time Test
Diode
Coil
V
OUT
C5
C2
OSCILLOSCOPE
Rout
NMOS
C1
V
IN
EXT
CE
R1
R2
0V/3.3V
C3
VFB
R3
DELAY
GND
<Components>
Inductor (L)
Diode (SD)
: 22µH (TDK LDR655312T-220)
: CRS02 (Toshiba)
Capacitors
C1 : 680pF (Ceramic), C2: 22µF (Tantalum)+2.2µF (Ceramic),
C3 : 68µF (Tantalum)+2.2µF (Ceramic), C5: 22µF (Tantalum)
NMOS Transistor : IRF7601 (International Rectifier)
Resistors : R1: 90kΩ, R2: 10kΩ, R3: 30kΩ
17
R1211x
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1211x002A
R1211x002A
L=10
µH
L=10
µH
VOUT=10V
V
OUT=5V
10.2
5.1
10.0
9.8
5.0
4.9
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
IN=2.5V
IN=3.3V
1
1
1
10
100
1000
1
1
1
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002A
R1211x002B
L=10
V
µH
OUT=15V
L=10
V
µH
OUT=5V
15.3
5.1
5.0
4.9
15.0
14.7
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
IN=2.5V
IN=3.3V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002B
R1211x002B
L=10
V
µH
OUT=10V
L=10
V
µH
OUT=15V
10.2
15.3
10.0
9.8
15.0
14.7
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
18
R1211x
R1211x002C
R1211x002C
L=22
µH
L=22
µH
VOUT=10V
V
OUT=5V
10.2
5.1
5.0
4.9
10.0
9.8
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
IN=2.5V
IN=3.3V
1
1
1
10
100
1000
1
1
1
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002C
R1211x002D
L=22
V
µH
OUT=15V
L=22
V
µH
OUT=5V
15.3
5.1
15.0
14.7
5.0
4.9
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
IN=2.5V
IN=3.3V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002D
R1211x002D
L=22
V
µH
OUT=10V
L=22
V
µH
OUT=15V
10.2
15.3
10.0
9.8
15.0
14.7
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
19
R1211x
2) Efficiency vs. Output Current
R1211x002A
R1211x002A
L=10
µH
L=10µH
VOUT=5V
VOUT=10V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
V
V
IN=2.5V
IN=3.3V
1
1
1
10
100
1000
1
1
1
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002A
R1211x002B
L=10
V
µH
OUT=15V
L=10
V
µH
OUT=5V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
V
V
IN=2.5V
IN=3.3V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002B
R1211x002B
L=10µH
L=10
V
µH
OUT=15V
VOUT=10V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
20
R1211x
R1211x002C
R1211x002C
L=22
µH
L=22 H
OUT=10V
VOUT=5V
V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
V
V
IN=2.5V
IN=3.3V
1
1
1
10
100
1000
1
1
1
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002C
R1211x002D
L=22
V
µ
H
L=22
V
µH
OUT=15V
OUT=5V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
V
V
IN=2.5V
IN=3.3V
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
R1211x002D
R1211x002D
L=22
µ
H
L=22
V
µH
OUT=15V
V
OUT=10V
100
80
100
80
60
60
40
40
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
V
V
V
IN=2.5V
IN=3.3V
IN=5.0V
20
0
20
0
10
100
1000
10
100
1000
Output Current IOUT(mA)
Output Current IOUT(mA)
21
R1211x
3) VFB Voltage vs. Input Voltage (Topt=25°C)
R1211x002x
Topt=25°C
1015
1010
1005
1000
995
990
985
2
3
4
5
6
Input Voltage VIN(V)
4) Oscillator Frequency vs. Input Voltage (Topt=25°C)
R1211x002A/B
R1211x002C/D
Topt=25°C
Topt=25°C
900
400
350
800
700
600
300
250
500
200
2
3
4
5
6
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
5) Supply Current vs. Input Voltage (Topt=25°C)
R1211x002A
R1211x002B
Topt=25°C
Topt=25°C
600
600
500
500
400
300
200
100
0
400
300
200
100
0
2
3
4
5
6
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
22
R1211x
R1211x002C
R1211x002D
Topt=25°C
Topt=25°C
400
300
200
100
0
400
300
200
100
0
2
3
4
5
6
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
6) Maximum Duty Cycle vs. Input Voltage (Topt=25°C)
R1211x002A/B
R1211x002C/D
Topt=25°C
Topt=25°C
96
94
92
96
94
92
90
88
86
84
90
88
86
84
82
80
82
80
2
3
4
5
6
2
3
4
5
6
Input Voltage VIN(V)
Input Voltage VIN(V)
7) VFB Voltage vs. Temperature
R1211x002x
V
IN=3.3V
1015
1010
1005
1000
995
990
985
-50
-25
0
25
50
75
100
Temperature Topt(°C)
23
R1211x
8) Oscillator Frequency vs. Temperature
R1211x002A/B
R1211x002C/D
VIN=3.3V
VIN=3.3V
900
800
700
400
350
300
600
500
250
200
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
9) Supply Current vs. Temperature
R1211x002A
R1211x002B
VIN=3.3V
VIN=3.3V
600
500
400
600
500
400
300
200
100
0
300
200
100
0
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
R1211x002C
R1211x002D
VIN=3.3V
VIN=3.3V
400
400
300
200
100
0
300
200
100
0
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
24
R1211x
10) Maximum Duty Cycle vs. Temperature
R1211x002A/B
R1211x002C/D
V
IN=3.3V
V
IN=3.3V
96
94
92
96
94
92
90
88
86
84
90
88
86
84
82
80
82
80
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
11) EXT "H" On Resistance vs. Temperature
R1211x002x
V
IN=3.3V
8
7
6
5
4
3
2
-50
-25
0
25
50
75
100
Temperature Topt(°C)
12) EXT "L" On Resistance vs. Temperature
R1211x002x
V
IN=3.3V
5
4
3
2
1
-50
-25
0
25
50
75
100
Temperature Topt(°C)
25
R1211x
13) Soft-start Time vs. Temperature
R1211x002A/B
R1211x002C/D
V
IN=3.3V
VIN=3.3V
16
16
14
12
10
14
12
10
8
6
8
6
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
14) UVLO Detector Threshold vs. Temperature
R1211x002x
VIN=3.3V
2300
2250
2200
2150
2100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
15) AMP "H" Output Current vs. Temperature
R1211x002A/C
V
IN=3.3V
1600
1400
1200
1000
800
600
400
-50
-25
0
25
50
75
100
Temperature Topt(°C)
26
R1211x
16) AMP "L" Output Current vs. Temperature
R1211x002A
R1211x002C
V
IN=3.3V
V
IN=3.3V
80
80
70
60
70
60
50
40
50
40
30
20
30
20
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
17) DELAY Pin Charge Current vs. Temperature
R1211x002A/B
R1211x002C/D
V
IN=3.3V
V
IN=3.3V
7
7
6
5
4
6
5
4
3
2
3
2
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temperature Topt(°C)
Temperature Topt(°C)
18) DELAY Pin Detector Threshold vs. Temperature
R1211x002x
VIN=3.3V
1040
1020
1000
980
960
-50
-25
0
25
50
75
100
Temperature Topt(°C)
27
R1211x
19) DELAY Pin Discharge Current vs. Temperature
R1211x002x
V
IN=2.5V
10
8
6
4
2
0
-50
-25
0
25
50
75
100
Temperature Topt(°C)
20) CE "L" Input Voltage vs. Temperature
R1211x002B/D
V
IN=2.5V
1200
1100
1000
900
800
700
600
-50
-25
0
25
50
75
100
Temperature Topt(°C)
21) CE "H" Input Voltage vs. Temperature
R1211x002B/D
V
IN=6.0V
1200
1100
1000
900
800
700
600
-50
-25
0
25
50
75
100
Temperature Topt(°C)
28
R1211x
22) Standby Current vs. Temperature
R1211x002B/D
V
IN=6.0V
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-50
-25
0
25
50
75
100
Temperature Topt(°C)
23) Load Transient Response
R1211x002A
L=10
µ
H
V
IN=3.3V, C3=22
µF
VOUT=5V, IOUT=1-100mA
5.6
VOUT
5.0
4.4
200
100
I
OUT
0
Time (5ms/div)
R1211x002A
29
R1211x
R1211x002A
L=10
µ
H
V
IN=3.3V, C3=22
µF
V
OUT=15V, IOUT=1-50mA
16.8
15.0
13.2
300
200
100
0
V
OUT
I
OUT
Time (5ms/div)
R1211x002B
L=10
µ
H
V
IN=3.3V, C3=22
µF
VOUT=5V, IOUT=1-100mA
5.6
5.0
4.4
300
200
100
0
VOUT
I
OUT
Time (5ms/div)
R1211x002B
L=10
µ
H
V
IN=3.3V, C3=22
µF
V
OUT=10V, IOUT=1-100mA
11.2
10.0
8.8
300
200
100
0
V
OUT
I
OUT
Time (5ms/div)
30
R1211x
R1211x002B
L=10
µ
H
V
IN=3.3V, C3=22
µF
V
OUT=15V, IOUT=1-50mA
16.8
15.0
13.2
300
200
100
0
V
OUT
I
OUT
Time (5ms/div)
R1211x002C
L=22
µ
H
V
IN=3.3V, C3=22
µF
VOUT=5V, IOUT=1-100mA
5.6
5.0
4.4
VOUT
200
100
I
OUT
0
Time (5ms/div)
R1211x002C
L=22
µ
H
V
IN=3.3V, C3=22
µF
V
OUT=10V, IOUT=1-100mA
11.2
10.0
8.8
V
OUT
200
100
I
OUT
0
Time (5ms/div)
31
R1211x
R1211x002C
L=22
µ
H
V
IN=3.3V, C3=22
µF
V
OUT=15V, IOUT=1-50mA
16.8
15.0
13.2
300
200
100
0
V
OUT
I
I
I
OUT
OUT
OUT
Time (5ms/div)
R1211x002D
L=22
µ
H
V
IN=3.3V, C3=22
µF
VOUT=5V, IOUT=1-100mA
5.6
5.0
4.4
VOUT
200
100
0
Time (5ms/div)
R1211x002D
L=22
µH
V
IN=3.3V, C3=22
µF
V
OUT=10V, IOUT=1-100mA
11.2
10.0
8.8
VOUT
200
100
0
Time (5ms/div)
32
R1211x
R1211x002D
L=22
µ
H
V
IN=3.3V, C3=22µF
V
OUT=15V, IOUT=1-50mA
16.8
15.0
300
200
100
0
V
OUT
I
OUT
13.2
Time (5ms/div)
24) Power-on Response
R1211x002A
R1211x002B
L=10
µ
H
L=10
µ
H
V
IN=3.3V, IOUT=10mA
V
IN=3.3V, IOUT=10mA
16
14
12
10
8
16
14
12
10
8
(c)VOUT=15V
(c)VOUT=15V
(b)VOUT=10V
(a)VOUT=5V
(b)VOUT=10V
(a)VOUT=5V
6
6
4
4
2
2
V
IN
VIN
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Time (5ms/div)
Time (5ms/div)
R1211x002C
R1211x002D
L=22
µ
H
L=22µH
V
IN=3.3V, IOUT=10mA
V
IN=3.3V, IOUT=10mA
16
14
12
10
8
16
14
12
10
8
(c)VOUT=15V
(c)VOUT=15V
(b)VOUT=10V
(a)VOUT=5V
(b)VOUT=10V
(a)VOUT=5V
6
6
4
4
V
IN
2
2
V
IN
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Time (5ms/div)
Time (5ms/div)
33
R1211x
25) Turn-on speed with CE pin
R1211x002B
R1211x002D
L=22µH
L=10µH
V
IN=3.3V, IOUT=10mA
V
IN=3.3V, IOUT=10mA
16
14
12
10
8
16
14
12
10
8
(c)VOUT=15V
(c)VOUT=15V
(b)VOUT=10V
(b)VOUT=10V
(a)VOUT=5V
6
6
(a)VOUT=5V
CE
4
4
2
2
CE
0
0
0
5
10
15
20
25
0
5
10
15
20
25
Time (5ms/div)
Time (5ms/div)
34
PE-SOT-23-6W-0512
PACKAGE INFORMATION
• SOT-23-6W
Unit: mm
PACKAGE DIMENSIONS
2.9 0.2
1.9 0.2
+0.2
−0.1
1.1
(0.95)
(0.95)
0.8 0.1
6
5
4
0 to 0.1
1
2
+0.1
−0.075
+0.1
−0.2
0.15
0.4
TAPING SPECIFICATION
+0.1
0
4.0 0.1
∅1.5
0.3 0.1
2.0 0.05
6
1
5
4
3.3
2
3
4.0 0.1
2.0MAX.
∅1.1 0.1
TR
User Direction of Feed
TAPING REEL DIMENSIONS
(1reel=3000pcs)
11.4 1.0
9.0 0.3
2 0.5
21 0.8
PE-SOT-23-6W-0512
PACKAGE INFORMATION
POWER DISSIPATION (SOT-23-6W)
This specification is at mounted on board. Power Dissipation (PD) depends on conditions of mounting on board.
This specification is based on the measurement at the condition below:
Measurement Conditions
Standard Land Pattern
Environment
Board Material
Board Dimensions
Copper Ratio
Mounting on Board (Wind velocity=0m/s)
Glass cloth epoxy plactic (Double sided)
40mm × 40mm × 1.6mm
Top side : Approx. 50% , Back side : Approx. 50%
Through-hole
φ0.5mm × 44pcs
Measurement Result
(Topt=25°C,Tjmax=125°C)
Standard Land Pattern
430mW
Power Dissipation
Thermal Resistance
θja=(125−25°C)/0.43W=233°C/W
600
On Board
40
500
430
400
300
200
100
0
0
25
50
75 85 100
125
150
Ambient Temperature (°C)
Power Dissipation
Measurement Board Pattern
IC Mount Area Unit : mm
RECOMMENDED LAND PATTERN (SOT-23-6W)
0.7 MAX.
0.95
1.9
0.95
(Unit: mm)
PE-SON-6-0510
PACKAGE INFORMATION
• SON-6
Unit: mm
PACKAGE DIMENSIONS
1.6 0.2
6
4
3
1
Bottom View
Attention: Tab suspension leads in the
parts have VDD or GND level.(They are
connected to the reverse side of this IC.)
Refer to PIN DISCRIPTION.
Do not connect to other wires or land patterns.
0.1
0.2 0.1
0.5
TAPING SPECIFICATION
4.0 0.1
+0.1
0
∅
1.5
2.0 0.05
0.2 0.1
1.9
4.0 0.1
1.7MAX.
∅1.1 0.1
TR
User Direction of Feed
TAPING REEL DIMENSIONS
(1reel=3000pcs)
11.4 1.0
9.0 0.3
2 0.5
21 0.8
PE-SON-6-0510
PACKAGE INFORMATION
POWER DISSIPATION (SON-6)
This specification is at mounted on board. Power Dissipation (PD) depends on conditions of mounting on board.
This specification is based on the measurement at the condition below:
Measurement Conditions
Standard Land Pattern
Environment
Board Material
Board Dimensions
Copper Ratio
Mounting on Board (Wind velocity=0m/s)
Glass cloth epoxy plactic (Double sided)
40mm × 40mm × 1.6mm
Top side : Approx. 50% , Back side : Approx. 50%
Through-hole
φ0.5mm × 44pcs
Measurement Result
(Topt=25°C,Tjmax=125°C)
Standard Land Pattern
500mW
θja=(125−25°C)/0.5W=200°C/W
Free Air
250mW
-
Power Dissipation
Thermal Resistance
600
On Board
40
500
400
300
200
100
0
Free Air
250
0
25
50
75 85 100
125
150
Ambient Temperature (°C)
Power Dissipation
Measurement Board Pattern
IC Mount Area (Unit : mm)
RECOMMENDED LAND PATTERN
0.25
0.5
(Unit: mm)
ME-R1211N-0310
MARK INFORMATION
R1211N SERIES MARK SPECIFICATION
• SOT-23-6W
1
3
2
4
,
,
: Product Code (refer to Part Number vs. Product Code)
: Lot Number
1
2
3
4
• Part Number vs. Product Code
Product Code
Part Number
1
2
R1211N002A
R1211N002B
R1211N002C
R1211N002D
L
L
L
L
0
1
2
3
ME-R1211D-0310
MARK INFORMATION
R1211D SERIES MARK SPECIFICATION
• SON-6
1
3
2
4
,
,
: Product Code (refer to Part Number vs. Product Code)
: Lot Number
1
3
2
4
• Part Number vs. Product Code
Product Code
Product Code
Part Number
Part Number
1
2
1
2
R1211D002A
R1211D002B
R1211D002C
R1211D002D
R1211D100A
R1211D101A
L
L
L
L
L
L
0
1
2
3
4
5
R1211D102A
R1211D101C
R1211D102C
R1211D103A
R1211D103C
R1211D104A
L
L
L
L
L
L
6
7
8
9
A
B
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