ADP3650JRZ-RL [ROCHESTER]
AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8;
| 型号： | ADP3650JRZ-RL |
| 厂家： | 
Rochester Electronics |
| 描述： | AND GATE BASED MOSFET DRIVER, PDSO8, ROHS COMPLIANT, MS-012AA, SOIC-8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总13页 (文件大小：1131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Dual, Bootstrapped, 12 V MOSFET
Driver with Output Disable
ADP3650
FEATURES
GENERAL DESCRIPTION
All-in-one synchronous buck driver
Bootstrapped high-side drive
One PWM signal generates both drives
Anti-crossconduction protection circuitry
OD for disabling the driver outputs
The ADP3650 is a dual, high voltage MOSFET driver optimized
for driving two N-channel MOSFETs, the two switches in a
nonisolated synchronous buck power converter. Each driver is
capable of driving a 3000 pF load with a 45 ns propagation delay
and a 25 ns transition time. One of the drivers can be boot-
strapped and is designed to handle the high voltage slew rate
associated with floating high-side gate drivers. The ADP3650
includes overlapping drive protection to prevent shoot-through
current in the external MOSFETs.
APPLICATIONS
Telecom and datacom networking
Industrial and medical systems
Point of load conversion: memory, DSP, FPGA, ASIC
The
pin shuts off both the high-side and the low-side
OD
MOSFETs to prevent rapid output capacitor discharge during
system shutdown.
The ADP3650 is specified over the temperature range of −40°C
to +85°C and is available in 8-lead SOIC_N and 8-lead LFCSP_VD
packages.
FUNCTIONAL BLOCK DIAGRAM
12V
D1
VCC
4
BST
ADP3650
1
8
C
BST2
C
LATCH
R1
BST1
2
R
G
IN
DRVH
R2
S
Q
Q1
DELAY
R
BST
TO
INDUCTOR
SW
7
CMP
VCC
6
CMP
DRVL
PGND
1V
CONTROL
LOGIC
5
6
Q2
DELAY
3
OD
Figure 1.
Rev. A
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2008–2010 Analog Devices, Inc. All rights reserved.
ADP3650
TABLE OF CONTENTS
Features .............................................................................................. 1
Low-Side Driver ............................................................................9
High-Side Driver...........................................................................9
Overlap Protection Circuit...........................................................9
Applications Information.............................................................. 10
Supply Capacitor Selection ....................................................... 10
Bootstrap Circuit........................................................................ 10
MOSFET Selection..................................................................... 10
High-Side (Control) MOSFETs................................................ 10
Low-Side (Synchronous) MOSFETs ........................................ 11
PCB Layout Considerations...................................................... 11
Outline Dimensions....................................................................... 12
Ordering Guide .......................................................................... 12
Applications....................................................................................... 1
General Description......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Timing Characteristics ................................................................ 4
Absolute Maximum Ratings............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution.................................................................................. 5
Pin Configurations and Function Descriptions ........................... 6
Typical Performance Characteristics ............................................. 7
Theory of Operation ........................................................................ 9
REVISION HISTORY
7/10—Rev. 0 to Rev. A
Changes to General Description Section ...................................... 1
Changes to Table 1............................................................................ 3
Changes to Operating Ambient Temperature Range Parameter,
Table 2 ................................................................................................ 5
Changes to Figure 8 and Figure 9................................................... 7
Changes to Ordering Guide .......................................................... 12
10/08—Revision 0: Initial Version
Rev. A | Page 2 of 12
ADP3650
SPECIFICATIONS
VCC = 12 V, BST = 4 V to 26 V, TA = −40°C to +85°C, unless otherwise noted.1
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
DIGITAL INPUTS (IN, OD)
Input Voltage High
Input Voltage Low
Input Current
2.0
V
V
μA
mV
0.8
+1
350
−1
40
Hysteresis
250
2.5
HIGH-SIDE DRIVER
Output Resistance, Sourcing Current
BST − SW = 12 V; TA = 25°C
BST − SW = 12 V; TA = −40°C to +85°C
BST − SW = 12 V; TA = 25°C
BST − SW = 12 V; TA = −40°C to +85°C
BST − SW = 0 V
BST − SW = 12 V, CLOAD = 3 nF, see Figure 3
BST − SW = 12 V, CLOAD = 3 nF, see Figure 3
BST − SW = 12 V, CLOAD = 3 nF,
25°C ≤ TA ≤ 85°C, see Figure 3
BST − SW = 12 V, CLOAD = 3 nF, see Figure 3
See Figure 2
3.3
3.9
1.8
2.6
Ω
Ω
Ω
Ω
kΩ
ns
ns
ns
Output Resistance, Sinking Current
1.4
10
25
20
45
Output Resistance, Unbiased
Transition Times
trDRVH
tfDRVH
tpdhDRVH
40
30
70
Propagation Delay Times
32
tpdlDRVH
25
20
35
35
ns
ns
tpdl
OD
See Figure 2
SW to PGND
40
10
55
ns
t
pdh
OD
SW Pull-Down Resistance
LOW-SIDE DRIVER
kΩ
Output Resistance, Sourcing Current
TA = 25°C
TA = −40°C to +85°C
TA = 25°C
TA = −40°C to +85°C
VCC = PGND
CLOAD = 3 nF, see Figure 3
CLOAD = 3 nF, see Figure 3
CLOAD = 3 nF, see Figure 3
CLOAD = 3 nF, see Figure 3
See Figure 2
3.3
3.9
1.8
2.6
Ω
Ω
Ω
Ω
kΩ
ns
ns
ns
ns
ns
2.4
Output Resistance, Sinking Current
1.4
10
20
16
12
30
20
Output Resistance, Unbiased
Transition Times
trDRVL
tfDRVL
tpdhDRVL
tpdlDRVL
35
30
35
45
35
Propagation Delay Times
t
pdl
OD
See Figure 2
110
190
ns
tpdh
OD
Timeout Delay
SW = 5 V
SW = PGND
110
95
190
150
ns
ns
SUPPLY
Supply Voltage Range
Supply Current
UVLO Voltage
Hysteresis
VCC
ISYS
4.15
1.5
13.2
5
3.0
V
mA
V
BST = 12 V, IN = 0 V
VCC rising
2
350
mV
1 All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC) methods.
Rev. A | Page 3 of 12
ADP3650
TIMING CHARACTERISTICS
Timing is referenced to the 90% and 10% points, unless otherwise noted.
OD
tpdlOD
tpdhOD
90%
DRVH
OR
DRVL
10%
Figure 2. Output Disable Timing Diagram
IN
tpdlDRVL
tfDRVL
tpdlDRVH
trDRVL
DRVL
tfDRVH
tpdhDRVH trDRVH
DRVH
TO
SW
V
V
TH
TH
tpdhDRVL
SW
1V
Figure 3. Timing Diagram
Rev. A | Page 4 of 12
ADP3650
ABSOLUTE MAXIMUM RATINGS
All voltages are referenced to PGND, unless otherwise noted.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 2.
Parameter
Rating
VCC
−0.3 V to +15 V
BST
DC
−0.3 V to VCC + 15 V
−0.3 V to +35 V
−0.3 V to +15 V
<200 ns
BST to SW
SW
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
DC
−5 V to +15 V
−10 V to +25 V
<200 ns
DRVH
DC
<200 ns
DRVL
DC
Table 3. Thermal Resistance
Package Type
θJA
Unit
SW − 0.3 V to BST + 0.3 V
SW − 2 V to BST + 0.3 V
8-Lead SOIC_N (R-8)
2-Layer Board
4-Layer Board
8-Lead LFCSP_VD1 (CP-8-2)
123
90
°C/W
°C/W
−0.3 V to VCC + 0.3 V
−2 V to VCC + 0.3 V
−0.3 V to +6.5 V
<200 ns
IN, OD
4-Layer Board
50
°C/W
Operating Ambient Temperature Range −40°C to +85°C
1 For LFCSP_VD, θJA is measured per JEDEC STD with exposed pad soldered to PCB.
Junction Temperature Range
Storage Temperature Range
Lead Temperature
0°C to 150°C
−65°C to +150°C
ESD CAUTION
Soldering (10 sec)
Vapor Phase (60 sec)
Infrared (15 sec)
300°C
215°C
260°C
Rev. A | Page 5 of 12
ADP3650
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
PIN 1
INDICATOR
BST
IN
1
2
3
4
DRVH
SW
8
7
6
5
ADP3650
TOP VIEW
(Not to Scale)
1
2
3
4
8
7
6
5
DRVH
SW
BST
IN
PGND
DRVL
OD
ADP3650
VCC
OD
VCC
PGND
DRVL
TOP VIEW
(Not to Scale)
NOTES
1. IT IS RECOMMENDED THAT THE
EXPOSED PAD AND THE PGND PIN
BE CONNECTED ON THE PCB.
Figure 5. 8-Lead LFCSP_VD Pin Configuration
Figure 4. 8-Lead SOIC_N Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1
BST
Upper MOSFET Floating Bootstrap Supply. A capacitor connected between the BST and SW pins holds this
bootstrapped voltage for the high-side MOSFET while it is switching.
2
IN
Logic Level PWM Input. This pin has primary control of the drive outputs. In normal operation, pulling this pin
low turns on the low-side driver; pulling it high turns on the high-side driver.
3
4
5
6
OD
Output Disable. When low, this pin disables normal operation, forcing DRVH and DRVL low.
Input Supply. This pin should be bypassed to PGND with an ~1 μF ceramic capacitor.
Synchronous Rectifier Drive. Output drive for the lower (synchronous rectifier) MOSFET.
Power Ground. This pin should be closely connected to the source of the lower MOSFET. This pin is not internally
connected to the exposed pad on the LFCSP. It is recommended that this pin and the exposed pad be
connected on the PCB.
VCC
DRVL
PGND
7
SW
Switch Node Connection. This pin is connected to the buck switching node, close to the upper MOSFET source.
It is the floating return for the upper MOSFET drive signal. It is also used to monitor the switched voltage to
prevent the lower MOSFET from turning on until the voltage is below ~1 V.
8
DRVH
Buck Drive. Output drive for the upper (buck) MOSFET.
EP
Exposed pad
For the LFCSP, the exposed pad and the PGND pin should be connected on the PCB. For more information
about exposed pad packages, see the AN-772 Application Note at www.analog.com.
Rev. A | Page 6 of 12
ADP3650
TYPICAL PERFORMANCE CHARACTERISTICS
19.0
18.5
18.0
17.5
17.0
16.5
16.0
15.5
15.0
14.5
14.0
IN
DRVH
DRVL
1
2
DRVL
DRVH
3
CH1 5V
CH2 5V
M40ns
20.2%
A CH1
2.4V
–40 –30 –20 –10
0
10 20 30 40 50 60 70 80
T
CH3 10V
JUNCTION TEMPERATURE (°C)
Figure 6. DRVH Rise and DRVL Fall Times,
LOAD = 6 nF for DRVL, CLOAD = 2 nF for DRVH
Figure 9. DRVH and DRVL Fall Times vs. Temperature
C
40
35
30
25
20
15
10
5
T
= 25°C
A
VCC = 12V
DRVH
IN
1
DRVL
DRVL
2
DRVH
3
CH1 5V
CH2 5V
M40ns
20.2%
A CH1
2.4V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
CH3 10V
LOAD CAPACITANCE (nF)
Figure 7. DRVH Fall and DRVL Rise Times,
Figure 10. DRVH and DRVL Rise Times vs. Load Capacitance
CLOAD = 6 nF for DRVL, CLOAD = 2 nF for DRVH
28
26
24
22
20
18
16
14
35
VCC = 12V
DRVL
DRVH
T
= 25°C
A
30
25
20
15
10
5
DRVH
DRVL
–40 –30 –20 –10
0
10 20 30 40 50 60 70 80
2.0
2.5
3.0
3.5
4.0
4.5
5.0
JUNCTION TEMPERATURE (°C)
LOAD CAPACITANCE (nF)
Figure 11. DRVH and DRVL Fall Times vs. Load Capacitance
Figure 8. DRVH and DRVL Rise Times vs. Temperature
Rev. A | Page 7 of 12
ADP3650
60
12
11
10
9
T
= 25°C
A
T
= 25°C
A
VCC = 12V
C
C
= 3nF
LOAD
= 3nF
LOAD
45
30
15
0
8
7
6
5
4
3
2
1
0
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
7
8
9
10 11 12
FREQUENCY (kHz)
V
(V)
CC
Figure 12. Supply Current vs. Frequency
Figure 14. DRVL Output Voltage vs. Supply Voltage
13
VCC = 12V
= 3nF
C
LOAD
= 250kHz
f
IN
12
11
10
9
0
25
50
75
100
125
JUNCTION TEMPERATURE (°C)
Figure 13. Supply Current vs. Temperature
Rev. A | Page 8 of 12
ADP3650
THEORY OF OPERATION
The ADP3650 is optimized for driving two N-channel
MOSFETs in a synchronous buck converter topology. A single
PWM input (IN) signal is all that is required to properly drive
the high-side and the low-side MOSFETs. Each driver is capable
of driving a 3 nF load at speeds up to 500 kHz. A functional
block diagram of the ADP3650 is shown in Figure 1.
OVERLAP PROTECTION CIRCUIT
The overlap protection circuit prevents both of the main power
switches, Q1 and Q2, from being on at the same time. This is
done to prevent shoot-through currents from flowing through
both power switches and the associated losses that can occur
during their on/off transitions. The overlap protection circuit
accomplishes this by adaptively controlling the delay from the
Q1 turn-off to the Q2 turn-on and by internally setting the
delay from the Q2 turn-off to the Q1 turn-on.
LOW-SIDE DRIVER
The low-side driver is designed to drive a ground referenced
N-channel MOSFET. The bias supply to the low-side driver is
internally connected to the VCC supply and PGND.
To prevent the overlap of the gate drives during the Q1 turn-off
and the Q2 turn-on, the overlap circuit monitors the voltage at
the SW pin. When the PWM input signal goes low, Q1 begins
to turn off (after propagation delay). Before Q2 can turn on, the
overlap protection circuit makes sure that SW has first gone
high and then waits for the voltage at the SW pin to fall from
When the driver is enabled, the driver output is 180° out of
phase with the PWM input. When the ADP3650 is disabled,
the low-side gate is held low.
HIGH-SIDE DRIVER
V
IN to 1 V. When the voltage on the SW pin falls to 1 V, Q2
The high-side driver is designed to drive a floating N-channel
MOSFET. The bias voltage for the high-side driver is developed
by an external bootstrap supply circuit that is connected
between the BST and SW pins.
begins to turn on. If the SW pin has not gone high first, the Q2
turn-on is delayed by a fixed 150 ns. By waiting for the voltage
on the SW pin to reach 1 V or for the fixed delay time, the
overlap protection circuit ensures that Q1 is off before Q2 turns
on, regardless of variations in temperature, supply voltage, input
pulse width, gate charge, and drive current. If SW does not go
below 1 V after 190 ns, DRVL turns on. This can occur if the
current flowing in the output inductor is negative and flows
through the high-side MOSFET body diode.
The bootstrap circuit comprises Diode D1 and Bootstrap
Capacitor CBST1. CBST2 and RBST are included to reduce the high-
side gate drive voltage and to limit the switch node slew rate.
When the ADP3650 starts up, the SW pin is at ground, so the
bootstrap capacitor charges up to VCC through D1. When the
PWM input goes high, the high-side driver begins to turn on
the high-side MOSFET, Q1, by pulling charge out of CBST1 and
CBST2. As Q1 turns on, the SW pin rises up to VIN and forces the
BST pin to VIN + VC (BST). This holds Q1 on because enough gate-
to-source voltage is provided. To complete the cycle, Q1 is
switched off by pulling the gate down to the voltage at the SW
pin. When the low-side MOSFET, Q2, turns on, the SW pin is
pulled to ground. This allows the bootstrap capacitor to charge
up to VCC again.
The output of the high-side driver is in phase with the PWM
input. When the driver is disabled, the high-side gate is held low.
Rev. A | Page 9 of 12
ADP3650
APPLICATIONS INFORMATION
A small signal diode can be used for the bootstrap diode due
to the ample gate drive voltage supplied by VCC. The bootstrap
diode must have a minimum 15 V rating to withstand the
maximum supply voltage. The average forward current can
be estimated by
SUPPLY CAPACITOR SELECTION
For the supply input (VCC) of the ADP3650, a local bypass
capacitor is recommended to reduce noise and to supply some
of the peak currents that are drawn. Use a 4.7 μF, low ESR
capacitor. Multilayer ceramic chip (MLCC) capacitors provide
the best combination of low ESR and small size. Keep the
ceramic capacitor as close as possible to the ADP3650.
IF(AVG) = QGATE × fMAX
(3)
where fMAX is the maximum switching frequency of the
controller.
BOOTSTRAP CIRCUIT
The bootstrap circuit uses a charge storage capacitor (CBST
)
The peak surge current rating should be calculated by
and a diode, as shown in Figure 1. These components can be
selected after the high-side MOSFET is chosen. The bootstrap
capacitor must have a voltage rating that can handle twice the
maximum supply voltage. A minimum 50 V rating is recom-
mended. The capacitor values are determined by
QGATE
VCC −VD
RBST
IF(PEAK )
=
(4)
MOSFET SELECTION
When interfacing the ADP3650 to external MOSFETs, the
designer should consider ways to make a robust design that
minimizes stresses on both the driver and the MOSFETs. These
stresses include exceeding the short time duration voltage
ratings on the driver pins as well as on the external MOSFET.
CBST1 + CBST2 = 10×
(1)
VGATE
VGATE
CBST1 + CBST2 VCC −VD
where:
CBST1
=
(2)
It is also highly recommended that the bootstrap circuit be used
to improve the interaction of the driver with the characteristics
of the MOSFETs (see the Bootstrap Circuit section). If a simple
bootstrap arrangement is used, make sure to include a proper
snubber network on the SW node.
QGATE is the total gate charge of the high-side MOSFET at VGATE
VGATE is the desired gate drive voltage (usually in the range of
5 V to 10 V, 7 V being typical).
.
VD is the voltage drop across D1.
HIGH-SIDE (CONTROL) MOSFETS
Rearranging Equation 1 and Equation 2 to solve for CBST1 yields
A high-side, high speed MOSFET is usually selected to
minimize switching losses. This typically implies a low gate
resistance and low input capacitance/charge device. Yet, a
significant source lead inductance can also exist that depends
mainly on the MOSFET package; it is best to contact the
MOSFET vendor for this information.
QGATE
CBST1 = 10×
VCC −VD
C
BST2 can then be found by rearranging Equation 1.
QGATE
VGATE
CBST2 =10×
−CBST1
The ADP3650 DRVH output impedance and the input resistance
of the MOSFETs determine the rate of charge delivery to the
internal capacitance of the gate. This determines the speed at
which the MOSFETs turn on and off. However, because of
potentially large currents flowing in the MOSFETs at the on and
off times (this current is usually larger at turn-off due to ramping
up of the output current in the output inductor), the source lead
inductance generates a significant voltage when the high-side
MOSFETs switch off. This creates a significant drain-source
voltage spike across the internal die of the MOSFETs and can
lead to a catastrophic avalanche. The mechanisms involved in
this avalanche condition are referenced in literature from the
MOSFET suppliers.
For example, an NTD60N02 has a total gate charge of about
12 nC at VGATE = 7 V. Using VCC = 12 V and VD = 1 V, then
CBST1 = 12 nF and CBST2 = 6.8 nF. Good quality ceramic capacitors
should be used.
R
BST is used to limit slew rate and minimize ringing at the switch
node. It also provides peak current limiting through D1. An
BST value of 1.5 Ω to 2.2 Ω is a good choice. The resistor needs
R
to handle at least 250 mW due to the peak currents that flow
through it.
Rev. A | Page 10 of 12
ADP3650
The MOSFET vendor should provide a safe operating rating for
maximum voltage slew rate at a given drain current. This allows
the designer to derate for the FET turn-off condition described
in this section. When this specification is obtained, determine
the maximum current expected in the MOSFET by
However, during the low-side turn-off to high-side turn-on,
the SW pin does not contain information for determining
the proper switching time, so the state of the DRVL pin is
monitored to go below one-sixth of VCC; then, a delay is added.
Due to the Miller capacitance and internal delays of the low-
side MOSFET gate, ensure that the Miller-to-input capacitance
ratio is low enough, and that the low-side MOSFET internal
delays are not so large as to allow accidental turn-on of the
low-side MOSFET when the high-side MOSFET turns on.
DMAX
f MAX ×LOUT
I MAX = IDC (per phase)+
(
VCC −VOUT
)
×
(5)
where:
DMAX is determined by the voltage controller being used with
the driver. This current is divided roughly equally between
MOSFETs if more than one is used (assume a worst-case
mismatch of 30% for design margin).
PCB LAYOUT CONSIDERATIONS
Use the following general guidelines when designing printed
circuit boards. Figure 15 shows an example of the typical land
patterns based on these guidelines.
LOUT is the output inductor value.
•
•
•
•
•
Trace out the high current paths and use short, wide
(>20 mil) traces to make these connections.
Minimize trace inductance between the DRVH and DRVL
outputs and the MOSFET gates.
Connect the PGND pin of the ADP3650 as close as
possible to the source of the lower MOSFET.
Locate the VCC bypass capacitor as close as possible to
the VCC and PGND pins.
When producing the design, there is no exact method for
calculating the dV/dt due to the parasitic effects in the external
MOSFETs as well as in the PCB. However, it can be measured to
determine whether it is safe. If it appears that the dV/dt is too
fast, an optional gate resistor can be added between DRVH and
the high-side MOSFETs. This resistor slows down the dV/dt,
but it increases the switching losses in the high-side MOSFETs.
The ADP3650 is optimally designed with an internal drive
impedance that works with most MOSFETs to switch them
efficiently, yet minimizes dV/dt. However, some high speed
MOSFETs may require this external gate resistor depending on
the currents being switched in the MOSFET.
When possible, use vias to other layers to maximize
thermal conduction away from the IC.
C
BST1
LOW-SIDE (SYNCHRONOUS) MOSFETS
The low-side MOSFETs are usually selected to have a low on
resistance to minimize conduction losses. This usually implies a
large input gate capacitance and gate charge. The first concern is
to make sure that the power delivery from the ADP3650 DRVL
does not exceed the thermal rating of the driver.
R
C
BST
BST2
D1
The next concern for the low-side MOSFETs is to prevent
them from being inadvertently switched on when the high-side
MOSFET turns on. This occurs due to the drain-gate capacitance
(Miller capacitance, also specified as Crss) of the MOSFET. When
the drain of the low-side MOSFET is switched to VCC by the
high-side MOSFET turning on (at a dV/dt rate), the internal
gate of the low-side MOSFET is pulled up by an amount roughly
equal to VCC × (Crss/Ciss). It is important to make sure that this
does not put the MOSFET into conduction.
C
VCC
Another consideration is the nonoverlap circuitry of the
ADP3650 that attempts to minimize the nonoverlap period.
During the state of the high-side MOSFET turning off to the
low-side MOSFET turning on, the SW pin is monitored (as well
as the conditions of SW prior to switching) to adequately
prevent overlap.
Figure 15. External Component Placement Example
Rev. A | Page 11 of 12
ADP3650
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8
1
5
4
6.20 (0.2441)
5.80 (0.2284)
4.00 (0.1574)
3.80 (0.1497)
0.50 (0.0196)
0.25 (0.0099)
1.27 (0.0500)
BSC
45°
1.75 (0.0688)
1.35 (0.0532)
0.25 (0.0098)
0.10 (0.0040)
8°
0°
0.51 (0.0201)
0.31 (0.0122)
COPLANARITY
0.10
1.27 (0.0500)
0.40 (0.0157)
0.25 (0.0098)
0.17 (0.0067)
SEATING
PLANE
COMPLIANT TO JEDEC STANDARDS MS-012-AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 16. 8-Lead Standard Small Outline Package [SOIC_N]
Narrow Body
(R-8)
Dimensions shown in millimeters and (inches)
3.25
3.00 SQ
2.75
0.60 MAX
0.50
BSC
0.60 MAX
5
8
2.95
2.75 SQ
2.55
1.60
1.45
1.30
EXPOSED
PAD
TOP
VIEW
PIN 1
INDICATOR
(BOTTOM VIEW)
4
1
PIN 1
INDICATOR
0.50
0.40
0.30
1.89
1.74
1.59
12° MAX
0.70 MAX
0.65TYP
0.90 MAX
0.85 NOM
0.05 MAX
0.01 NOM
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
0.30
0.23
0.18
SEATING
PLANE
0.20 REF
SECTION OF THIS DATA SHEET.
Figure 17. 8-Lead Lead Frame Chip Scale Package [LFCSP_VD]
3 mm x 3 mm Body, Very Thin, Dual Lead
(CP-8-2)
Dimensions shown in millimeters
ORDERING GUIDE
Package Ordering
Model1
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
Option
Quantity
Branding
ADP3650JRZ
ADP3650JRZ-RL
ADP3650JCPZ-RL
8-Lead Standard Small Outline Package (SOIC_N)
8-Lead Standard Small Outline Package (SOIC_N)
8-Lead Lead Frame Chip Scale Package (LFCSP_VD)
R-8
98
R-8
CP-8-2
2,500
5,000
L91
1 Z = RoHS Compliant Part.
©2008–2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D07826-0-7/10(A)
Rev. A | Page 12 of 12
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