BAS70-06B5000 [ROCHESTER]

0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN;


型号：	BAS70-06B5000
厂家：	Rochester Electronics
描述：	0.07 A, 2 ELEMENT, SILICON, SIGNAL DIODE, SOT-23, 3 PIN
文件：	总8页 (文件大小：895K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BAS70...B5000 / B5003

Silicon Schottky Diode

• General-purpose diode for high-speed switching

• Circuit protection

• Voltage clamping

• High-level detecting and mixing

• Improved operating temperature range

due to extra-low thermal resistance

(see attached Forward current curves)

• High volume packing size:

B5000: 9 x 10kreels, B5003: 10 x 3k reels

• Not for automotive applications*

BAS70

BAS70-04

BAS70-05

BAS70-06

Type

Package

SOT23

Configuration

single

series

common cathode

common anode

L (nH) Marking

BAS70

1.8

73s

74s

75s

76s

BAS70-04

BAS70-05

BAS70-06

* Automotive qualification ongoing

2006-08-04

BAS70...B5000 / B5003

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Diode reverse voltage

Forward current

Symbol

Value

Unit

100

Non-repetitive peak surge forward current

Total power dissipation

FSM

°C

tot

BAS70, T ≤ 109 °C

BAS70-04, BAS70-06, T ≤ 101 °C

250

BAS70-05, T ≤ 95 °C

150

Junction temperature

Operating temperature range

Storage temperature

-55 ... 125

-55 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

thJS

Value

Unit

K/W

BAS70

BAS70-04, BAS70-06

BAS70-05

≤ 165

≤ 195

≤ 220

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 10 µA

(BR)

0.1

Reverse current

µA

V = 50 V

Forward voltage

I = 1 mA

300

600

720

375

705

880

410

750

1000

I = 10 mA

I = 15 mA

Forward voltage matching

∆ V

I = 10 mA

¹For calculation of R

please refer to Application Note Thermal Resistance

thJA

²∆V is the difference between lowest and highestV in a multiple diode component.

2006-08-04

BAS70...B5000 / B5003

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

AC Characteristics

1.5

Diode capacitance

V = 0 , f = 1 MHz

Forward resistance

Ω

I = 10 mA, f = 10 kHz

100 ps

Charge carrier life time

I = 25 mA

2006-08-04

BAS70...B5000 / B5003

Diode capacitance C = ƒ (V )

Forward resistance r = ƒ (I )

f F

f = 1MHz

BAS 70W/BAS 170W

EHB00044

BAS 70W/BAS 170W

EHB00045

10 ³

2.0

Ω

C_T

r_f

1.5

1.0

0.5

0.0

10 ²

10 ¹

10 ⁰

mA 100

0.1

V_R

Ι _F

Reverse current I = ƒ(V )

Forward current I = ƒ (V )

F F

T = Parameter

BAS 70W/BAS 170W

EHB00042

BAS 70W/BAS 170W

EHB00043

10²

µ A

T_A= 150 C

Ι _F

Ι _R

10¹

85 C

10⁰

T_A= -40 C

10^-1

25 C

85 C

150 C

10^-1

25 C

10^-2

10^-3

10^-2

0.0

0.5

1.0

1.5

V_R

V_F

2006-08-04

BAS70...B5000 / B5003

Forward current I = ƒ (T )

F S

BAS70B500x

BAS70-04/-06B500x

BAS70Exxx (e.g. E6327)

BAS70-04/-06Exxx (e.g. E6327)

BAS70-04/-06B500x

BAS70-04/-06Exxxx

BAS70B500x

BAS70Exxxx

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

Forward current I = ƒ (T )

BAS70-05B500x

BAS70-05Exxx (e.g. E6327)

BAS70-05B500x

BAS70-05Exxxx

°C

15 30 45 60 75 90 105 120

150

2006-08-04

Package SOT23

BAS70...B5000 / B5003

Package Outline

±0.1

0.1 MAX.

±0.1

2.9

+0.1

-0.05

0.4

0.08...0.15

0.95

0...8˚

1.9

0.25 B C

1) Lead width can be 0.6 max. in dambar area

0.2

Foot Print

0.8

1.2

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

Pin 1

BCW66

Type code

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

0.9

1.15

3.15

Pin 1

2006-08-04

BAS70...B5000 / B5003

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.

2006-08-04

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