BC307BG [ROCHESTER]
100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN;
| 型号： | BC307BG |
| 厂家： | 
Rochester Electronics |
| 描述： | 100mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN 放大器 晶体管 |
| 文件： | 总5页 (文件大小：735K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC307B, BC307C
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
−45
Unit
Vdc
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
V
CEO
V
CBO
V
EBO
−50
Vdc
3
EMITTER
−5.0
−100
Vdc
I
mAdc
C
MARKING
DIAGRAM
P
P
D
D
@ T = 25°C
Derate above 25°C
350
2.8
mW
mW/°C
A
BC30
Total Device Dissipation
TO−92
CASE 29
STYLE 17
7x
AYWW G
G
@ T = 25°C
Derate above 25°C
1.0
8.0
W
mW/°C
C
1
2
3
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC307x = Device Code
x = B or C
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(Note: Microdot may be in either location)
Thermal Resistance,
Junction−to−Ambient
R
q
JA
357
°C/W
ORDERING INFORMATION
†
Thermal Resistance,
Junction−to−Case
R
q
JC
125
°C/W
Device
Package
Shipping
BC307B
TO−92
5000 Units / Box
5000 Units / Box
BC307BG
TO−92
(Pb−Free)
BC307BRL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC307BRL1G
TO−92
(Pb−Free)
BC307BZL1
TO−92
2000 / Ammo Box
2000 / Ammo Box
BC307BZL1G
TO−92
(Pb−Free)
BC307C
TO−92
5000 Units / Box
5000 Units / Box
BC307CG
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
September, 2005 − Rev. 3
BC307/D
BC307B, BC307C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I = −2.0 mAdc, I = 0)
V
Vdc
Vdc
(BR)CEO
(BR)EBO
−45
−
−
−
−
C
B
Emitter−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
−5.0
E
C
Collector−Emitter Leakage Current
I
CES
(V
(V
= −50 V, V = 0)
−
−
−0.2
−0.2
−15
−4.0
nAdc
mA
CES
CES
BE
= −50 V, V = 0) T = 125°C
BE
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −10 mAdc, V = −5.0 Vdc)
BC307B
BC307C
−
−
150
270
−
−
C
CE
(I = −2.0 mAdc, V = −5.0 Vdc)
BC307
BC307B
BC307C
120
200
420
−
290
500
800
460
800
C
CE
(I = −100 mAdc, V = −5.0 Vdc)
BC307B
BC307C
−
−
180
300
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
Vdc
CE(sat)
BE(sat)
−
−
−
−0.10
−0.30
−0.25
−0.3
−0.6
−
C
B
(I = −10 mAdc, I = see Note 1)
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = −10 mAdc, I = −0.5 mAdc)
V
Vdc
Vdc
−
−
−0.7
−1.0
−
−
C
B
(I = −100 mAdc, I = −5.0 mAdc)
C
B
Base−Emitter On Voltage
(I = −2.0 mAdc, V = −5.0 Vdc)
V
−0.55
−0.62
−0.7
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = −10 mAdc, V = −5.0 Vdc, f = 100 MHz)
−
−
280
−
−
C
CE
Common Base Capacitance
C
cbo
6.0
(V = −10 Vdc, I = 0, f = 1.0 MHz)
CB
C
Noise Figure
NF
dB
(I = −0.2 mAdc, V = −5.0 Vdc, R = 2.0 kW,
C
CE
S
f = 1.0 kHz)
−
2.0
10
1. I = −10 mAdc on the constant base current characteristic, which yields the point I = −11 mAdc, V = −1.0 V.
C
C
CE
http://onsemi.com
2
BC307B, BC307C
TYPICAL CHARACTERISTICS
2.0
1.5
−1.0
T
A
= 25°C
V
T
= −10 V
CE
= 25°C
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
V
@ I /I = 10
C B
BE(sat)
A
1.0
V
@ V = −10 V
CE
BE(on)
0.7
0.5
−0.3
−0.2
−0.1
0
0.3
0.2
V
@ I /I = 10
C B
CE(sat)
−0.2 −0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100 −200
−0.1 −0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50 −100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
C
ib
200
150
V
T
= −10 V
CE
= 25°C
T = 25°C
A
A
100
80
3.0
2.0
C
ob
60
40
30
20
1.0
−0.5
−1.0
−2.0 −3.0 −5.0
−10
−20 −30 −50
−0.4 −0.6 −1.0
−2.0
−4.0 −6.0 −10
−20 −30 −40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current−Gain — Bandwidth Product
Figure 4. Capacitances
1.0
150
140
0.5
0.3
V
= −10 V
CE
f = 1.0 kHz
V
= −10 V
CE
T
A
= 25°C
f = 1.0 kHz
= 25°C
T
A
130
120
110
100
0.1
0.05
0.03
0.01
−0.1
−0.2
−0.5
−1.0
−2.0
−5.0
−10
−0.1
−0.2 −0.3 −0.5
−1.0
−2.0 −3.0 −5.0
−10
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Output Admittance
Figure 6. Base Spreading Resistance
http://onsemi.com
3
BC307B, BC307C
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
J
H
V
K
L
−−− 12.70
−−−
0.105
6.35
2.04
−−−
−−−
C
N
P
R
V
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
2.93
3.43
1
N
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC307/D
相关型号：
BC307BJ05Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
FAIRCHILD
BC307BJ18Z
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
FAIRCHILD
BC307BRL
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN, BIP General Purpose Small Signal
ONSEMI
BC307BRLRB
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA
BC307BRLRF
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MOTOROLA
©2020 ICPDF网 联系我们和版权申明