BCW32LT1G [ROCHESTER]

100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN;


型号：	BCW32LT1G
厂家：	Rochester Electronics
描述：	100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 光电二极管晶体管
文件：	总7页 (文件大小：833K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BCW32LT1

General Purpose

Transistors

NPN Silicon

Features

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• Pb−Free Package is Available

COLLECTOR

MAXIMUM RATINGS

BASE

Rating

Symbol

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

Vdc

EMITTER

5.0

Vdc

Collector Current − Continuous

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

THERMAL CHARACTERISTICS

SOT−23 (TO−236AB)

CASE 318

Characteristic

Symbol

Value

Unit

STYLE 6

Total Device Dissipation

FR-5 Board

(1)

225

T = 25°C

Derate above 25°C

1.8

mW/°C

°C/W

MARKING DIAGRAM

Thermal Resistance,

Junction−to−Ambient

556

Total Device Dissipation

Alumina Substrate, T = 25°C

300

(2)

D2 M

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction−to−Ambient

417

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

M = Date Code

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

ORDERING INFORMATION

†

Device

Package

Shipping

BCW32LT1

SOT−23

3000 Units / Reel

BCW32LT1G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 1

BCW32LT1/D

BCW32LT1

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector−Emitter Breakdown Voltage

−

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = 2.0 mAdc, V = 0)

Collector−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

Emitter−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

5.0

Collector Cutoff Current

(V = 32 Vdc, I = 0)

CBO

−

100

nAdc

mAdc

(V = 32 Vdc, I = 0, T = 100°C)

ON CHARACTERISTICS

DC Current Gain

−

(I = 2.0 mAdc, V = 5.0 Vdc)

200

−

450

0.25

0.70

Collector−Emitter Saturation Voltage

(I = 10 mAdc, I = 0.5 mAdc)

Vdc

CE(sat)

Base−Emitter On Voltage

(I = 2.0 mAdc, V = 5.0 Vdc)

BE(on)

0.55

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

−

4.0

obo

(I = 0, V = 10 Vdc, f = 1.0 MHz)

Noise Figure

(I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

TYPICAL NOISE CHARACTERISTICS

(V_CE= 5.0 Vdc, T_A= 25°C)

100

= 1.0 mA

BANDWIDTH = 1.0 Hz

= 1.0 mA

R ≈ ∞

R = 0

300 mA

100 mA

5.0

7.0

5.0

100 mA

2.0

1.0

10 mA

30 mA

0.5

0.2

0.1

30 mA

3.0

2.0

10 mA

10 20

50 100 200

500 1ꢀk

2ꢀk

5ꢀk 10ꢀk

50 100 200

500 1ꢀk

2ꢀk

5ꢀk 10ꢀk

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

Figure 2. Noise Current

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BCW32LT1

NOISE FIGURE CONTOURS

(V_CE= 5.0 Vdc, T_A= 25°C)

500ꢀk

1ꢀM

500ꢀk

BANDWIDTH = 1.0 Hz

200ꢀk

100ꢀk

50ꢀk

200ꢀk

100ꢀk

50ꢀk

20ꢀk

10ꢀk

5ꢀk

2.0 dB

1.0 dB

5ꢀk

2ꢀk

1ꢀk

3.0 dB

4.0 dB

2.0 dB

2ꢀk

1ꢀk

3.0 dB

5.0 dB

8.0 dB

6.0 dB

10 dB

500

200

100

200

100

20 30

50 70 100

200 300

500 700 1ꢀk

20 30

50 70 100

200 300

500 700 1ꢀk

I , COLLECTOR CURRENT (mA)

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

500ꢀk

10 Hz to 15.7 kHz

200ꢀk

100ꢀk

50ꢀk

Noise Figure is defined as:

20ꢀk

n S

1ń2

) 4KTR ) I

₁₀ǒ

10ꢀk

5ꢀk

NF + 20 log

4KTR

1.0 dB

= Noise Voltage of the Transistor referred to the input. (Figure 3)

2ꢀk

1ꢀk

2.0 dB

= Noise Current of the Transistor referred to the input.

3.0 dB

(Figure 4)

= Boltzman’s Constant (1.38 x 10

500

−23

j/°K)

5.0 dB

8.0 dB

= Temperature of the Source Resistance (°K)

= Source Resistance (W)

200

100

20 30

50 70 100

200 300

500 700 1ꢀk

I , COLLECTOR CURRENT (mA)

Figure 5. Wideband

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BCW32LT1

TYPICAL STATIC CHARACTERISTICS

400

200

T = 125°C

25°C

−ꢁ55°C

100

= 1.0 V

= 10 V

0.004 0.006 0.01

0.02 0.03 0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

3.0

2.0

5.0 7.0 10

50 70 100

I , COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

1.0

100

T = 25°C

I = 500 mA

PULSE WIDTH = 300 ms

DUTY CYCLE ≤ 2.0%

0.8

0.6

0.4

0.2

400 mA

300 mA

200 mA

= 1.0 mA

10 mA

50 mA

100 mA

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0

5.0 10 20

5.0

I , BASE CURRENT (mA)

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

1.4

1.2

1.6

0.8

*APPLIES for I /I ≤ h /2

C B

T = 25°C

25°C to 125°C

−55°C to 25°C

1.0

0.8

0.6

0.4

*q for V

CE(sat)

@ I /I = 10

C B

BE(sat)

−ꢁ0.8

−ꢁ1.6

−ꢁ2.4

BE(on)

@ V = 1.0 V

25°C to 125°C

−55°C to 25°C

0.2

for V

@ I /I = 10

C B

CE(sat)

0.1 0.2

0.5 1.0

2.0

5.0

50 100

0.1

0.2

0.5

1.0 2.0

5.0 10 20

50 100

I , COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

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BCW32LT1

TYPICAL DYNAMIC CHARACTERISTICS

7.0

5.0

T = 25°C

f = 1.0 MHz

3.0

2.0

1.0

0.05 0.1

0.2

0.5 1.0

2.0

5.0

V , REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

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BCW32LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236AB)

CASE 318−08

ISSUE AK

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

INCHES

MIN

MILLIMETERS

DIM

MAX

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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BCW32LT1/D

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