FAGD16575A32BA [ROCHESTER]
ATM/SONET/SDH SUPPORT CIRCUIT, PQFP32, 5 X 5 MM, 1.40 MM HEIGHT, HEAT SINK, PLASTIC, TQFP-32;型号: | FAGD16575A32BA |
厂家: | Rochester Electronics |
描述: | ATM/SONET/SDH SUPPORT CIRCUIT, PQFP32, 5 X 5 MM, 1.40 MM HEIGHT, HEAT SINK, PLASTIC, TQFP-32 ATM 异步传输模式 电信 电信集成电路 |
文件: | 总7页 (文件大小:790K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2.5 Gbit/s
Laser Driver
GD16575A
an Intel company
Preliminary
General Description
Features
l
The GD16575A is a high performance
low power 2.5 Gbit/s Laser Driver.
A Mark-Space monitor is available on the
pins MARKP and MARKN.
Complies with ITU-T STM-16 and
SONET OC-48 standards.
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The GD16575A is designed to meet and
exceed ITU-T STM-16 or SONET OC-48
fiberoptic communication systems re-
quirements.
The GD16575A is implemented in a Sili-
con Bipolar process and requires a single
+5 V supply or a single -5.2 V supply.
Intended for driving a 50 W load,
e.g. a laser diode with 50 W input
impedance.
l
The circuit is available in a thermally
enhanced 32-pin TQFP plastic package.
Large modulation current adjustment
range from 5 mA to 60 mA.
The GD16575A is designed to sink a
Modulation Current into the IOUT pin and
a Pre-Bias Current into the IPRE pin. The
Modulation Current is adjustable up to
60 mA by means of the pin VMOD. The
Pre-Bias Current may be adjusted up to
50 mA by means of the VPRE pin.
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Output voltage over / undershoot less
than ±2 % respectively ±5 %.
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Rise / fall times less than 110/100 ps.
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Laser diode pre-bias adjustable up to
50 mA.
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Mark-Space monitor.
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Internal 50 W termination of data
inputs.
VADJEF VMOD VADJBUF
VPRE
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Operates up to 3.5 Gbit/s.
Modulation
Current
Control
Pre-Bias
Current
Control
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Power dissipation: 0.38 W.
Excluding Modulation Current and
Pre-bias Current.
IPRE
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Silicon Bipolar process.
VDD
VDDCONT
DINT
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32 pin thermally enhanced TQFP
plastic package.
50
Input
Buffer
Output
Driver
DIN
IOUT
DINQ
IOUTN
50
VEE
VEEP
VEEB
Applications
DINQT
Mark/Space
Monitor
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Tele Communication:
–
–
SDH STM-16
SONET OC-48
MARKP
MARKN
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Datacom up to 3.125 Gbit/s.
Electro Absorption laser driver.
Direct Modulation laser driver.
Data Sheet Rev.: 8
Functional Details
GD16575A is a 2.5 Gbit/s laser driver. It
is capable of driving high power laser di-
odes, typically having input impedance of
50 W, at a maximum modulation current
of 60 mA and a maximum pre-bias cur-
rent of 50 mA.
The output voltage swing across the ex-
ternal load may be varied accordingly.
The modulation current control on pin
VMOD is implemented as a current mir-
ror and therefore sinks a current propor-
tional to the modulation current. The
current sink into the VMOD pin is ap-
proximately 3/80 of the modulation
current.
current range, when driving a 50 W load.
Similarly the voltage undershoot is less
than 5 %.
A mark-space monitor is provided
through the pins MARKP and MARKN.
These may be connected as shown in
the application diagram below, with a ca-
pacitor across the two outputs and a
comparator (or Op-amp) to determine the
mark density.
The differential data inputs (DINT and
DINQT) are internally terminated to the
DINT and DINQT respectively with 50 W
resistors. This allows loop-through termi-
nation on both inputs and ensures opti-
mum jitter performance. The input
Two additional pins (VADJBUF and
VADJEF) are available in order to opti-
mise the performance of the output sig-
nal quality, specifically with respect to
overshoot and undershoot. Typically best
performance is obtained if these pins are
connected to VMOD.
sensitivity when driven with a single
ended signal is better than 150 mV.
AC Coupled Output
When DC coupled the output swing will
be limited by IOUT output voltage speci-
fied to -2 V. For maximum output voltage
swing the output should be AC coupled
as shown on Figure 2 or VDD should be
raised.
The output pin (IOUT) is an open collec-
tor output designed for driving external
loads with 50 W characteristic imped-
ance. Because of the nature of an open
collector the output therefore may be re-
garded as a current switch, with infinite
output impedance. The characteristic im-
pedance through the package is approxi-
mately 50 W. Optimum performance of
GD16575A therefore is achieved if the
output is terminated into a 50 W imped-
ance.
The pre-bias current is controlled by the
pin VPRE and can be controlled from
0 mA to 50 mA. The pre-bias current
control on pin VPRE is implemented as a
current mirror and therefore sinks a cur-
rent proportional to the pre-bias current.
The current sink into the VPRE pin is
approximately 3/500 of the pre-bias
current.
VDD
VDD
L1 and L3 = Siemens Chip
Inductors (B82432A1224K).
L2 and L4 = Siemens ferrite
cores B64290-A36-X33 with
8 turns of 0.22mm Cu-Wire.
L1
220uH
L3
220uH
L2
L4
100nF
100nF
An important parameter for laser drivers
is voltage overshoot on the output pin
(IOUT), because it determines the extinc-
tion ratio. GD16575A has been designed
with special emphasis on achieving a
very small voltage overshoot. For
IOUT
The output modulation current is con-
trolled by the pin VMOD and can be con-
trolled in the range from 0 mA to 60 mA,
however DC-coupling of the output is
only possible in the range from 5 mA to
40 mA. Operated with an AC-coupling,
the output modulation current can be
controlled in the range 5 mA to 60 mA.
IOUTN
50W
VDD
GD16575A the voltage overshoot is less
than 2 % across the full modulation
Figure 2. AC Coupled Output
Control Voltage from
Modulation Current
Control System
Control Voltage from
Pre-Bias Current
Control System
Laser Diode Equivalent
50 W Input Impedance
VMOD / 20
VPRE / 16
VDD
Modulation
Current
Control
Pre-Bias
Current
Control
IPRE / 19
VDD
L
50
100n
DINT / 26
DIN / 27
50
Input
Buffer
Output
Driver
C
C
50
50
50
Differential or
Single-ended
Data Signal
IOUT / 13, 14
DINQ / 30
50
VDD
IOUTN / 11, 12
50
DINQT / 31
L
100n
Mark/Space
Monitor
VDD
MARKP / 7
MARKN / 6
100n
-
VEEP / 18
+
Ref.
Negative
Supply
Figure 1. Application Diagram
Data Sheet Rev.: 8
GD16575A
Page 2 of 6
Pin List
Mnemonic:
Pin No.:
Pin Type:
Description:
DIN, DINQ
27, 30
AC IN
Data inputs. Internally terminated in 50 W to DINT and DINQT
respectively.
DINT, DINQT
IOUT, IOUTN
26, 31
14, 11
ANL IN
Termination voltages for DIN and DINQ.
OPEN
COLLECTOR
Laser Driver Output (2.5 Gbit/s). IOUT and IOUTN sink a modula-
tion current, which is controlled by the pin VMOD. The current into
IOUT is low when data is high on DIN.
IPRE
19
20
OPEN
COLLECTOR
Pre-bias current output. IPRE sinks a current, which is controlled
by the pin VPRE.
VMOD
ANL IN
Modulation current control input. The control system is made as a
current mirror. VMOD sinks a current proportional to the modula-
tion current. This current is approximately 3/80 times “The modu-
lation current”.
VPRE
16
ANL IN
Pre-bias current control input. The control system is made as a
current mirror. VPRE sinks a current proportional to the pre-bias
current. This current is approximately 3/500 times “The pre-bias
current”.
MARKP
MARKN
7
6
ANL OUT
ANL IN
PWR
Mark-space monitor outputs. High impedance CML outputs. The
output voltage of the MARKP pin is the same polarity as the volt-
age on the DIN input.
VADJBUF
VADJEF
22
21
Pins used to optimise the performance of the output in terms of
overshoot and undershoot. Typically optimum performance will be
achieved when shorted to VMOD.
VDD
2, 4, 9, 10, 12, 13,
15, 24, 28, 29
Ground pins for laser driver part.
VDDCONT
VEE
3
PWR
PWR
PWR
PWR
Ground pin for modulation current control system.
Negative supply pins for laser driver part.
Negative supply pin for output driver.
Negative supply pin for pre-bias circuitry.
Connect to VDD.
1, 5, 8, 23, 25, 32
VEEP
18
17
VEEB
Heat sink
Package back
Package Pinout
1
24
23
22
21
20
19
18
17
VEE
VDD
VEE
2
VDD
3
VDDCONT
VADJBUF
VADJEF
VMOD
IPRE
4
VDD
5
VEE
6
MARKN
7
MARKP
VEEP
8
VEE
VEEB
Figure 3. Package 32 TQFP, Top View
Data Sheet Rev.: 8
GD16575A
Page 3 of 6
Maximum Ratings
These are the limits beyond which the component may be damaged.
All voltages in table are referred to VDD.
All currents in table are defined positive out of the pin.
Symbol:
VEE
Characteristic:
Conditions:
MIN.:
-6
TYP.:
MAX.:
UNIT:
V
Power Supply
0
2
VO
Applied Voltage (All Outputs)
Applied Voltage (All Inputs)
Input Current (AC IN)
Input Current (VMOD)
VEE -0.5
VEE -0.5
-1
V
VI
0.5
1
V
II AC IN
II VMOD
II VPRE
TO
mA
mA
mA
°C
-4
1
Input Current (VPRE, VADJBUF and VADJEF) Note 1
-1
1
Operating Temperature
Storage Temperature
Base
-55
+125
+150
TS
-65
°C
Note 1: Voltage and/or current should be externally limited to specified range.
DC Characteristics
TCASE = -40 °C to 85 °C.
All voltages in table are referred to VDD.
All currents in table are defined positive out of the pin.
Symbol:
VEE
Characteristic:
Conditions:
MIN.:
TYP.:
- 5.2
75
MAX.:
UNIT:
V
Power Supply
- 5.5
-4.7
IEE
Negative Supply Current
Power Dissipation
IOUT = 0 A
mA
W
PDISS
VEE = - 5.0 V,
IOUT = 0 A,
IPRE = 0 A
0.38
0.5
V
pp AN IN
Peak- peak Voltage when Input is Driven Single VVTH=- 1.3V
ended.
150
800
mV
V VMOD
I VMOD
Voltage Range for VMOD
Sink Current into pin VMOD
VEE
- 6
VDD
0
V
mA
V
V
IN NN
Input Voltage Range for VPRE, VADJBUF, and
VADJEF
VEE
VDD
I
SINK NN
Sink Current into pin VPRE, VADJBUF, and
VADJEF
- 1
0
mA
V
LO MARK
O MARK
O IPRE
I IPRE
O IOUT
Mod,HI IOUT
Mod,LO IOUT
Low Output Voltage for Mark-Space Monitor
Output Impedance for Mark-Space Monitor
IPRE Output Voltage
- 2.0
V
R
4.0
kW
V
V
-2.0
-50
-2.0
-60
-3
0
0
IPRE Current
mA
V
V
IOUT Output Voltage
Note 1
I
I
IOUT High Modulation Current
IOUT Low Modulation Current
Note 1
0
1
mA
mA
Note 1, 2
Note 1: RLOAD = 50 W AC coupled to VDD connected to pin IOUT. Sink current is controlled by the VMOD pin, and may be
adjusted in the range as specified. Notice that high modulation current means that the output voltage level is low.
Note 2: This is a leakage current. Maximum leakage current is present at maximum modulation current.
The leakage current decreases for smaller modulation currents.
Data Sheet Rev.: 8
GD16575A
Page 4 of 6
AC Characteristics
TCASE = -40 °C to 85 °C.
Symbol:
Characteristic:
Conditions:
MIN.:
TYP.:
MAX.:
UNIT:
Mbit/s
ps
fMAX OUT
Data Output Frequency
Added Output Jitter
Output Rise Time
2500
J
pp OUT
Note 1
Note 1
Note 1
20
110
100
2
t
t
RISE OUT
FALL OUT
ps
Output Fall Time
ps
tOVER OUT
Voltage Output Overshoot
Voltage Output Undershoot
%
tUNDER OUT
5
%
Note 1: RLOAD = 50 W to VDD connected to pin IOUT. ILD = 40 mA. Rise/Fall times at 20 – 80 % of HI/LO voltage levels.
Package Outline
Figure 4. Package 32L TQFP (5 x 5 x 1.4 mm)
Data Sheet Rev.: 8
GD16575A
Page 5 of 6
Device Marking
GD16575A
<Wafer #>
<As. Lot #> <YYWW>
Figure 5. Device Marking, 32 pin Package - Top View
Ordering Information
To order, please specify as shown below:
Product Name:
Intel Order Number:
Package Type:
Temperature Range:
GD16575A-32BA
FAGD16575A32BA
MM#: 836127
32L TQFP EDQUAD
-40..85 °C
GD16575A, Data Sheet Rev.: 8 - Date: 24 July 2001
an Intel company
Mileparken 22, DK-2740 Skovlunde
Denmark
Phone : +45 7010 1062
Distributor:
The information herein is assumed to be
reliable. GIGA assumes no responsibility
for the use of this information, and all such
information shall be at the users own risk.
Prices and specifications are subject to
change without notice. No patent rights or
licenses to any of the circuits described
herein are implied or granted to any third
party. GIGA does not authorise or warrant
any GIGA Product for use in life support
devices and/or systems.
Fax : +45 7010 1063
E-mail : sales@giga.dk
Web site : http://www.intel.com/ixa
Copyright © 2001 GIGA ApS
An Intel company
All rights reserved
Please check our Internet web site
for latest version of this data sheet.
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