FQB12N60CTM [ROCHESTER]

12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3;


型号：	FQB12N60CTM
厂家：	Rochester Electronics
描述：	12A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, D2PAK-3 开关脉冲晶体管
文件：	总10页 (文件大小：1504K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

September 2007

QFET

FQB12N60C / FQI12N60C

600V N-Channel MOSFET

Features

Description

•

12A, 600V, R_DS(on)= 0.65Ω @V_GS= 10 V

Low gate charge ( typical 48 nC)

Low Crss ( typical 21pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

I²-PAK

FQI Series

D²-PAK

FQB Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

Units

FQB12N60C/FQI12N60C

V_DSS

I_D

Drain-Source Voltage

600

Drain Current

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

7.4

(Note 1)

I_DM

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

± 30

870

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C)

Power Dissipation (T_C= 25°C)

22.5

4.5

V/ns

3.13

225

- Derate above 25°C

1.78

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Thermal Characteristics

Symbol

Parameter

Typ

Max

0.56

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FQB12N60C / FQI12N60C Rev. A

www.fairchildsemi.com

Package Marking and Ordering Information

Device Marking

FQB12N60C

Device

Package

D2-PAK

Reel Size

Tape Width

Quantity

FQB12N60CTM

FQI12N60CTU

330mm

24mm

800

FQI12N60C

I2-PAK

Electrical Characteristics

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

600

∆BV_DSS

∆T_J

Breakdown Voltage Temperature Coefficient I_D= 250 µA, Referenced to 25°C

0.5

V/°C

I_DSS

Zero Gate Voltage Drain Current

V_DS= 600 V, V_GS= 0 V

V_DS= 480 V, T_C= 125°C

V_GS= 30 V, V_DS= 0 V

V_GS= -30 V, V_DS= 0 V

µA

I_GSSF

I_GSSR

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

100

-100

On Characteristics

V_GS(th)

R_DS(on)

g_FS

Gate Threshold Voltage

V_DS= V_GS, I_D= 250 µA

2.0

4.0

0.65

Ω

Static Drain-Source On-Resistance

Forward Transconductance

V_GS= 10 V, I_D= 6 A

0.53

V_DS= 50 V, I_D= 6 A

(Note 4)

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

1760

182

2290

235

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

t_d(on)Turn-On Delay Time

t_r

t_d(off)

t_f

V_DD= 300 V, I_D= 12A,

R_G= 25 Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

180

280

190

140

(Note 4, 5)

Q_g

V_DS= 480 V, I_D= 12A,

_GS= 10 V

Q_gs

Q_gd

8.5

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

1.4

I_SM

V_SD

t_rr

Drain-Source Diode Forward Voltage

Reverse Recovery Time

V_GS= 0 V, I_S= 12 A

V_GS= 0 V, I_S= 12 A,

420

4.9

dI_F/ dt = 100 A/µs

(Note 4)

Q_rr

Reverse Recovery Charge

µC

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 11mH, I =12A, V = 50V, R = 25 Ω, Starting T = 25°C

3. I ≤ 12A, di/dt ≤200A/µs, V ≤ BV Starting T = 25°C

DSS, J

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

V_GS

Top :

15.0 V

10.0V

8.0V

7.0V

6.0V

5.5V

5.0V

10¹

150^oC

10¹Bottom: 4.5 V

-55^oC

25^oC

10⁰

※Notes :

1. 250µ s Pulse Test

2. T_C= 25℃

10⁰

※Notes :

1. V_DS= 40V

2. 250µ s Pulse Test

-1

10⁰

10¹

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperatue

1.5

10¹

V_GS= 10V

1.0

10⁰

150℃

V_GS= 20V

※Notes :

1. V_GS= 0V

2. 250µ s Pulse Test

0.5

25℃

※Note : T = 25℃

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I_D, Drain Current [A]

V_SD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

3500

C_iss= C_gs+ C_gd(C_ds= shorted)

_oss= C + C

_rss= C^ds

V_DS= 120V

3000

2500

2000

1500

1000

500

V_DS= 300V

V_DS= 480V

iss

oss

※Notes ;

1. V_GS= 0 V

2. f = 1 MHz

rss

※Note : I_D= 12A

-1

10⁰

10¹

Q_G, Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

1.2

1.1

1.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

※Notes:

0.9

1. V = 0 V

2. I_D^G=^S250 µ A

※Notes :

1. V_GS= 10 V

2. I_D= 6.0 A

0.8

-100

-50

100

150

200

-50

100

150

200

T, Junction Temperature [^oC]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Operation in This Area

is Limited by R _DS(on)

10²

10 µs

100 µs

1 ms

10¹

10 ms

100 ms

10⁰

※Notes :

-1

1. T_C= 25 ^oC

2. T = 150 ^oC

3. Single Pulse

-2

10⁰

10¹

10²

10³

100

125

150

T_C, Case Temperature [℃]

V_DS, Drain-Source Voltage [V]

Figure 11. Transient Thermal Response Curve

1 0⁰

D = 0 .5

0 .2

1 0^-1

※

N otes

1. Z_{θ JC}(t)

0.56 ℃ /W M ax.

2. D uty Factor, D =t₁/t₂

0 .1

3. T_JM

- T_C= P _DM* Z_{θ JC}(t)

0 .0 5

P_DM

0 .0 2

0 .0 1

1 0^-2

t₁

sin g le p u ls e

t₂

10 ^-5

1 0 ^-4

10 ^-3

1 0^-2

1 0 ^-1

10 ⁰

1 0 ¹

t₁, S quare W ave P ulse D uration [sec]

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Peak Diode Recovery dv/dt Test Circuit & Waveforms

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Package Dimensions

D²-PAK

4.50 0.20

9.90 0.20

+0.10

–0.05

1.30

0.10 0.15

2.40 0.20

0.80 0.10

2.54 TYP

1.27 0.10

2.54 TYP

+0.10

–0.05

0.50

10.00 0.20

(8.00)

(4.40)

10.00 0.20

(2XR0.45)

0.80 0.10

Dimensions in Millimeters

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

Package Dimensions (Continued)

I²-PAK

4.50 0.20

9.90 0.20

+0.10

–0.05

1.30

1.27 0.10

2.54 TYP

1.47 0.10

0.80 0.10

+0.10

–0.05

0.50

2.40 0.20

2.54 TYP

10.00 0.20

Dimensions in Millimeters

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Power247

SuperSOT™-8

SyncFET™

The Power Franchise

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK

POWEREDGE

Power-SPM™

PowerTrench

Programmable Active Droop™

QFET

TinyBoost™

TinyBuck™

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

TinyLogic

Fairchild

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

Fairchild Semiconductor

FACT Quiet Series™

MicroPak™

MillerDrive™

Motion-SPM™

FACT

SPM

FAST

OPTOLOGIC

STEALTH™

FastvCore™

FPS™

FRFET

Global Power Resource^SM

OPTOPLANAR

SuperFET™

SuperSOT™-3

SuperSOT™-6

UHC

UniFET™

VCX™

PDP-SPM™

Power220

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or (b)

support or sustain life, and (c) whose failure to perform when

properly used in accordance with instructions for use provided

in the labeling, can be reasonably expected to result in a

significant injury to the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Advance Information

Formative or In Design

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains specifications on a product that has been discontin-

ued by Fairchild Semiconductor. The datasheet is printed for reference infor-

mation only.

Rev. I31

www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60CTM [ROCHESTER]

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