FQD3N60TF [ROCHESTER]
2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3;
| 型号： | FQD3N60TF |
| 厂家： | 
Rochester Electronics |
| 描述： | 2.4A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：1289K) |
| 下载： | 下载PDF数据表文档文件 |
FQD3N60TM
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
FQD3P20
200V P-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
44
FAIRCHILD
FQD3P20TF
Power Field-Effect Transistor, 2.4A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
FQD3P50
500V P-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
254
FAIRCHILD
FQD3P50_09
500V P-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
32
FAIRCHILD
FQD3P50TF
2.1A, 500V, 4.9ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
ROCHESTER
FQD3P50TF
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
FQD3P50TM
500V P-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
33
FAIRCHILD
FQD3P50TM
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
FAIRCHILD
FQD3P50TM_F085
Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
FAIRCHILD
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
47
FAIRCHILD
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
23
FAIRCHILD
FQD4N20
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
88
FAIRCHILD
FQD4N20_09
200V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
FAIRCHILD
FQD4N20L
200V LOGIC N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
49
FAIRCHILD
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