IRF710R [ROCHESTER]

2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB;
IRF710R
元器件型号: IRF710R
生产厂家: Rochester Electronics    Rochester Electronics
描述和应用:

2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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PDF文件: 总6页 (文件大小:873K)
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型号参数:IRF710R参数

IRF710S

HEXFET Power MOSFET

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52 IRF

IRF710SPBF

HEXFET㈢ Power MOSFET

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29 IRF

IRF710STRL

Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRF710STRLPBF

暂无描述

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0 IRF

IRF710STRLPBF

暂无描述

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0 VISHAY

IRF710STRR

暂无描述

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0 VISHAY

IRF710STRR

Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 IRF

IRF710STRRPBF

Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

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0 VISHAY

IRF711

N-Channel Power MOSFETs, 2.25A, 350-400V

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72 FAIRCHILD

IRF711

Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRF711

2A, 350V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 ROCHESTER

IRF711-001

Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF711-002PBF

Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF711-003PBF

Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF711-004PBF

Power Field-Effect Transistor, 2A I(D), 350V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF