IRL620A [ROCHESTER]
5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN;型号: | IRL620A |
厂家: | Rochester Electronics |
描述: | 5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总8页 (文件大小:904K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRL620A
FEATURES
BVDSS = 200 V
RDS(on) = 0.8Ω
ID = 5 A
Logic-Level Gate Drive
♦
♦
♦
♦
♦
♦
♦
♦
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
TO-220
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ VDS = 200V
µ
Lower RDS(ON): 0.609 (Typ.)
Ω
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
200
5
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
ID
A
3.2
18
IDM
VGS
EAS
IAR
(1)
A
V
Gate-to-Source Voltage
20
±
(2)
(1)
(1)
(3)
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
33
5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25°C)
Linear Derating Factor
mJ
V/ns
W
3.9
5
39
0.31
PD
TJ , TSTG
TL
W/°C
Operating Junction and
- 55 to +150
300
Storage Temperature Range
Maximum Lead Temp. for Soldering
°C
Purposes, 1/8 from case for 5-seconds
Thermal Resistance
Symbol
RθJC
Characteristic
Junction-to-Case
Case-to-Sink
Typ.
Max.
Units
--
0.5
--
3.17
--
RθCS
°C/W
RθJA
Junction-to-Ambient
62.5
Rev. B
©1999 Fairchild Semiconductor Corporation
1
IRL620A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=250µA
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
200 --
--
∆BV/∆TJ
VGS(th)
ID=250µA
See Fig 7
VDS=5V,ID=250µA
GS=20V
VGS=-20V
V/°C
-- 0.18 --
V
1.0
--
--
2.0
100
V
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
-- -100
V
V
DS=200V
--
--
10
IDSS
Drain-to-Source Leakage Current
µA
DS=160V,TC=125°C
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
RDS(on)
VGS=5V,ID=2.5A
VDS=40V,ID=2.5A
(4)
(4)
--
--
0.8
--
Ω
Ω
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
3.3
330 430
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
70
30
25
20
60
20
15
--
55
25
8
pF
ns
VDD=100V,ID=5A,
RG=9Ω
6
td(off)
tf
Turn-Off Delay Time
Fall Time
24
6
(4) (5)
(4) (5)
See Fig 13
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
10.3
2.0
4.4
VDS=160V,VGS=5V,
ID=5A
Qgs
Qgd
nC
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
--
--
--
--
--
--
5
18
1.5
--
A
ISM
(1)
(4)
VSD
trr
V
--
TJ=25°C,IS=5A,VGS=0V
TJ=25°C,IF=5A
ns
µC
140
Qrr
-- 0.59 --
(4)
diF/dt=100A/µs
Notes;
(1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
(2) L=2mH, IAS=5A, VDD=50V, R =27 , Starting T =25 C
Ω
°
G
J
(3) ISD 5A, di/dt 180A/ s, V
BV , Starting T =25 C
°
DSS J
≤
≤
µ
≤
DD
(4) Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
µ
≤
(5) Essentially Independent of Operating Temperature
2
IRL620A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
VGS
1
10 Top :
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
1
10
0
150oC
10
Bottom : 3.0V
0
10
25oC
@Notes:
1. VGS =0V
2. VDS =40V
-55oC
@ Notes:
-1
10
1. 250 s PulseTest
µ
3. 250 sPulseTest
µ
2. T =25oC
C
-1
10
-1
0
1
0
2
4
6
8
10
10
10
10
V , Drain-Source Voltage [V]
V , Gate-Source Voltage [V]
GS
DS
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
1
10
VGS =5 V
0
10
@Notes:
1. VGS =0V
2. 250µsPulseTest
VGS =10 V
150oC
25oC
@ Note: T =25 oC
J
-1
10
0
3
6
9
12
15
18
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
500
400
300
200
100
C
iss= C + Cgd (C = shorted )
gs ds
C
oss= C + C
ds gd
6
4
2
0
Ciss
Crss= C
V
DS =40V
DS =100V
DS =160V
gd
V
V
C oss
@ Notes:
1. VGS =0 V
2. f= 1MHz
C rss
@Notes:I =5A
D
00
10
1
0
2
4
6
8
10
12
10
Q , Total Gate Charge [nC]
V
DS , Drain-Source Voltage [V]
G
3
IRL620A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
1.1
1.0
0.9
0.8
2.5
2.0
1.5
1.0
0.5
0.0
@Notes:
1. VGS =5V
@ Notes:
1. V =0 V
GS
2. I =2.5A
D
2. I =250
A
µ
D
-75 -50 -25
0
25
50
75
100 125 150 175
-75 -50 -25
0
25
50
75
100 125 150 175
o
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
6
Operation in This Area
isLimitedby RDS(on)
5
4
3
2
1
0
1
10
100
s
µ
1 ms
10ms
DC
0
10
@ Notes:
1. T =25oC
C
2. T =150oC
J
-1
10
3. SinglePulse
0
1
2
25
50
75
100
125
150
10
10
10
o
T , Case Temperature [C]
V , Drain-Source Voltage [V]
c
DS
Fig 11. Thermal Response
D=0.5
100
@ Notes :
0.2
1. Z JC(t)=3.17 oC/W Max.
θ
0.1
2. Duty Factor, D=t1/t2
0.05
3. TJM-TC=PDM*Z JC(t)
θ
10-1
PDM
0.02
0.01
t1
t2
single pulse
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
4
IRL620A
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
VGS
Same Type
as DUT
50k
Ω
Qg
200nF
12V
5V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
5V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
5V
t p
t p
Time
5
IRL620A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
dv/dt controlled by RG
IS controlled by Duty Factor
D
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
5V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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CoolFET™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
FAST®
FASTr™
GTO™
HiSeC™
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with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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