KA5L0380RYDTU [ROCHESTER]

12 A SWITCHING REGULATOR, 55 kHz SWITCHING FREQ-MAX, ZFM4, TO-220F, 4 PIN;
KA5L0380RYDTU
型号: KA5L0380RYDTU
厂家: Rochester Electronics    Rochester Electronics
描述:

12 A SWITCHING REGULATOR, 55 kHz SWITCHING FREQ-MAX, ZFM4, TO-220F, 4 PIN

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www.fairchildsemi.com  
KA5x03xx-SERIES  
KA5H0365R, KA5M0365R, KA5L0365R  
KA5H0380R, KA5M0380R, KA5L0380R  
Fairchild Power Switch(FPS)  
Features  
Description  
• Precision Fixed Operating Frequency (100/67/50kHz)  
• Low Start-up Current(Typ. 100uA)  
• Pulse by Pulse Current Limiting  
• Over Current Protection  
• Over Voltage Protection (Min. 25V)  
• Internal Thermal Shutdown Function  
• Under Voltage Lockout  
The Fairchild Power Switch(FPS) product family is specially  
designed for an off-line SMPS with minimal external  
components. The Fairchild Power Switch(FPS) consists of a  
high voltage power SenseFET and a current mode PWM IC.  
Included PWM controller integrates the fixed frequency  
oscillator, the under voltage lock-out, the leading edge  
blanking, the optimized gate turn-on/turn-off driver, the  
thermal shutdown protection, the over voltage protection,  
and the temperature compensated precision current sources  
for the loop compensation and the fault protection circuitry.  
Compared to a discrete MOSFET and a PWM controller or  
an RCCsolution, a Fairchild Power Switch(FPS) can reduce  
the total component count, design size and weight and at the  
same time increase efficiency, productivity, and system  
reliability. It has a basic platform well suited for the cost  
effective design in either a flyback converter or a forward  
converter  
• Internal High Voltage Sense FET  
• Auto-Restart Mode  
Applications  
• SMPS for VCR, SVR, STB, DVD & DVCD  
• SMPS for Printer, Facsimile & Scanner  
• Adaptor for Camcorder  
TO-220F-4L  
1
1. GND 2. Drain 3. V  
CC  
4. FB  
Internal Block Diagram  
#3 V  
CC  
#2 DRAIN  
32V  
5V  
Vref  
Internal  
bias  
SFET  
Good  
logic  
OSC  
9V  
S
R
Q
5μA  
1mA  
#4 FB  
L.E.B  
0.1V  
2.5R  
1R  
+
+
S
#1 GND  
7.5V  
27V  
Q
R
Thermal S/D  
OVER VOLTAGE S/D  
+
Power on reset  
Rev.1.0.7  
©2003 Fairchild Semiconductor Corporation  
KA5X03XX-SERIES  
Absolute Maximum Ratings  
(Ta=25°C, unless otherwise specified)  
Characteristic  
Symbol  
Value  
Unit  
KA5H0365R, KA5M0365R, KA5L0365R  
Drain-Gate Voltage (R =1MΩ)  
V
650  
±30  
V
V
GS  
DGR  
Gate-Source (GND) Voltage  
Drain Current Pulsed (1)  
V
GS  
I
12.0  
3.0  
A
DM  
DC  
Continuous Drain Current (T =25°C)  
I
I
A
A
C
D
DC  
DC  
Continuous Drain Current (T =100°C)  
2.4  
C
D
Single Pulsed Avalanche Energy (2)  
E
358  
mJ  
V
AS  
Maximum Supply Voltage  
V
30  
CC,MAX  
Analog Input Voltage Range  
V
-0.3 to V  
75  
V
FB  
SD  
P
W
D
Total Power Dissipation  
Derating  
0.6  
W/°C  
°C  
°C  
°C  
Operating Junction Temperature.  
Operating Ambient Temperature.  
Storage Temperature Range.  
T
+150  
J
T
-40 to +85  
A
T
-55 to +150  
STG  
KA5H0380R, KA5M0380R, KA5L0380R  
Drain-Gate Voltage (R =1MΩ)  
V
800  
±30  
12.0  
3.0  
2.1  
95  
V
V
GS  
DGR  
Gate-Source (GND) Voltage  
Drain Current Pulsed (1)  
V
GS  
I
A
DM  
DC  
Continuous Drain Current (T =25°C)  
I
I
A
A
C
D
DC  
DC  
Continuous Drain Current (T =100°C)  
C
D
Single Pulsed Avalanche Energy (2)  
E
mJ  
V
AS  
Maximum Supply Voltage  
V
30  
CC,MAX  
Analog Input Voltage Range  
V
-0.3 to V  
75  
V
FB  
SD  
P
W
D
Total Power Dissipation  
Derating  
0.6  
W/°C  
°C  
°C  
°C  
Operating Junction Temperature.  
Operating Ambient Temperature.  
Storage Temperature Range.  
T
+150  
J
T
-40 to +85  
A
T
-55 to +150  
STG  
Note:  
1. Repetitive rating: Pulse width limited by maximum junction temperature  
2. L = 51mH, starting Tj = 25°C  
3. L = 13μH, starting Tj = 25°C  
2
KA5X03XX-SERIES  
Electrical Characteristics (SenseFET Part)  
(Ta = 25°C unless otherwise specified)  
Parameter  
Symbol  
Condition  
Min. Typ. Max. Unit  
KA5H0365R, KA5M0365R, KA5L0365R  
Drain-Source Breakdown Voltage  
BV  
V
V
=0V, I =50μA  
650  
-
-
-
-
V
DSS  
GS  
D
=Max. Rating, V =0V  
GS  
50  
μA  
DS  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
=0.8Max. Rating,  
DS  
-
-
200  
μA  
=0V, T =125°C  
GS  
C
Static Drain-Source on Resistance (Note)  
Forward Transconductance (Note)  
Input Capacitance  
R
V
=10V, I =0.5A  
D
-
3.6  
-
4.5  
Ω
DS(ON)  
GS  
DS  
gfs  
V
=50V, I =0.5A  
D
2.0  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
720  
40  
V
GS  
=0V, V =25V,  
DS  
Output Capacitance  
Coss  
Crss  
pF  
nS  
f=1MHz  
Reverse Transfer Capacitance  
Turn On Delay Time  
40  
td(on)  
tr  
V
DD  
=0.5BV  
DSS  
, I =1.0A  
D
150  
100  
150  
42  
(MOSFET switching  
time is essentially  
independent of  
Rise Time  
Turn Off Delay Time  
td(off)  
tf  
Fall Time  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
=10V, I =1.0A,  
D
=0.5BV (MOSFET  
DSS  
GS  
DS  
Qg  
-
-
34  
switching time is essentially  
independent of  
operating temperature)  
nC  
Gate-Source Charge  
Qgs  
Qgd  
-
-
7.3  
-
-
Gate-Drain (Miller) Charge  
13.3  
KA5H0380R, KA5M0380R, KA5L0380R  
Drain-Source Breakdown Voltage  
BV  
V
V
=0V, I =50μA  
800  
-
-
-
-
V
DSS  
GS  
D
=Max. Rating, V =0V  
GS  
250  
μA  
DS  
Zero Gate Voltage Drain Current  
I
DSS  
V
V
=0.8Max. Rating,  
DS  
-
-
1000  
μA  
=0V, T =125°C  
GS  
C
Static Drain-Source on Resistance (Note)  
Forward Transconductance (Note)  
Input Capacitance  
R
V
V
=10V, I =0.5A  
D
-
4.0  
2.5  
779  
75.6  
24.9  
40  
5.0  
Ω
DS(ON)  
GS  
DS  
gfs  
=50V, I =0.5A  
D
1.5  
-
-
-
-
-
-
-
-
S
Ciss  
-
-
-
-
-
-
-
V
GS  
=0V, V =25V,  
DS  
Output Capacitance  
Coss  
Crss  
pF  
nS  
f=1MHz  
Reverse Transfer Capacitance  
Turn On Delay Time  
td(on)  
tr  
V
DD  
=0.5BV , I =1.0A  
DSS D  
(MOSFET switching  
time is essentially  
independent of  
Rise Time  
95  
Turn Off Delay Time  
td(off)  
tf  
150  
60  
Fall Time  
operating temperature)  
Total Gate Charge  
(Gate-Source+Gate-Drain)  
V
V
=10V, I =1.0A,  
D
=0.5BV (MOSFET  
DSS  
GS  
DS  
Qg  
-
-
34  
switching time is  
essentially independent of  
operating temperature)  
nC  
Gate-Source Charge  
Qgs  
Qgd  
-
-
7.2  
-
-
Gate-Drain (Miller) Charge  
12.1  
Note:  
1. Pulse test: Pulse width 300μS, duty 2%  
2.  
1
R
---  
S =  
3
KA5X03XX-SERIES  
Electrical Characteristics (Control Part) (Continued)  
(Ta = 25°C unless otherwise specified)  
Characteristic  
Symbol  
Test condition  
Min. Typ. Max.  
Unit  
UVLO SECTION  
Start Threshold Voltage  
Stop Threshold Voltage  
OSCILLATOR SECTION  
V
V
V
=GND  
=GND  
14  
15  
9
16  
V
V
START  
FB  
V
8.4  
9.6  
STOP  
FB  
KA5H0365R  
KA5H0380R  
Initial Accuracy  
Initial Accuracy  
F
90  
61  
100  
67  
110  
73  
kHz  
kHz  
OSC  
OSC  
KA5M0365R  
KA5M0380R  
F
KA5L0365R  
KA5L0380R  
Initial Accuracy  
F
45  
-
50  
±5  
67  
55  
±10  
72  
kHz  
%
OSC  
-
Frequency Change With Temperature (2)  
Maximum Duty Cycle  
-25°CTa+85°C  
KA5H0365R  
KA5H0380R  
Dmax  
62  
%
KA5M0365R  
KA5M0380R  
KA5L0365R  
KA5L0380R  
Maximum Duty Cycle  
Dmax  
72  
77  
82  
%
FEEDBACK SECTION  
Feedback Source Current  
Shutdown Feedback Voltage  
Shutdown Delay Current  
REFERENCE SECTION  
Output Voltage (1)  
I
Ta=25°C, 0V<Vfb<3V  
0.7  
6.9  
4
0.9  
7.5  
5
1.1  
8.1  
6
mA  
V
FB  
V
Vfb>6.5V  
SD  
Idelay  
Ta=25°C, 5VVfbV  
μA  
SD  
Vref  
Ta=25°C  
4.80 5.00 5.20  
0.3  
V
Temperature Stability (1)(2)  
Vref/ΔT  
-25°CTa+85°C  
-
0.6 mV/°C  
CURRENT LIMIT(SELF-PROTECTION)SECTION  
Peak Current Limit  
IOVER  
Max. inductor current  
1.89 2.15 2.41  
A
PROTECTION SECTION  
Over Voltage Protection  
Thermal Shutdown Temperature (Tj) (1)  
TOTAL STANDBY CURRENT SECTION  
Start-up Current  
V
V
>24V  
25  
27  
29  
-
V
OVP  
CC  
T
-
140  
160  
°C  
SD  
I
V
V
=14V  
<28  
-
-
100  
7
170  
12  
μA  
START  
CC  
Operating Supply Current  
(Control Part Only)  
I
mA  
OP  
CC  
Note:  
1. These parameters, although guaranteed, are not 100% tested in production  
2. These parameters, although guaranteed, are tested in EDS(water test) process  
4
KA5X03XX-SERIES  
Typical Performance Characteristics(SenseFET part)  
(KA5H0365R, KA5M0365R, KA5L0365R)  
10  
10  
VGS  
Top : 15V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
Bottom:4.5V  
150 o  
C
1
1
o
-25 C  
25 o  
C
@Notes:  
1. 300  
2. TC = 25o  
@Notes:  
1. VDS = 30V  
μ
s PulseTest  
C
2. 300  
μ
s Pulse Test  
0.1  
0.1  
2
4
6
8
10  
1
10  
VGS, Gate-Source Voltage [V]  
VDS, Drain-Source Voltage [V]  
Figure 2. Transfer Characteristics  
Figure 1. Output Characteristics  
7
6
5
4
3
2
1
0
Vgs=10V  
1
Vgs=20V  
150 o  
C
25 o  
C
0.1  
@Notes :  
1. VGS = 0V  
2. 300 s Pulse Test  
μ
@ Note : Tj=25  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
0
1
2
3
4
5
VSD, Source-Drain Voltage [V]  
ID,Drain Current [A]  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Source-Drain Diode Forward Voltage  
700  
10  
Ciss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
600  
500  
400  
300  
200  
100  
0
VDS=130V  
Crss = Cgd  
VDS=320V  
VDS=520V  
8
Ciss  
6
4
2
Coss  
Crss  
@Note: ID=3.0A  
0
100  
101  
0
5
10  
15  
20  
25  
QG,Total Gate Charge [nC]  
VDS, Drain-Source Voltage [V]  
Figure 6. Gate Charge vs. Gate-Source Voltage  
Figure 5. Capacitance vs. Drain-Source Voltage  
5
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(KA5H0365R, KA5M0365R, KA5L0365R)  
1.2  
1.1  
1.0  
0.9  
0.8  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
@ Notes :  
1. VGS = 0V  
2. ID = 250  
@ Notes:  
1. VGS = 10V  
2. ID = 1.5A  
μ
A
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Figure 7. Breakdown Voltage vs. Temperature  
Figure 8. On-Resistance vs. Temperature  
102  
Operation in This Area  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
is Limited by R  
DS(on)  
10  
s
μ
101  
100  
s
μ
1 ms  
10 ms  
DC  
100  
10-1  
10-2  
@ Notes :  
1. TC = 25 oC  
2. TJ = 150 oC  
3. Single Pulse  
100  
101  
102  
103  
25  
50  
75  
100  
125  
150  
VDS  
,
Drain-Source Voltage [V]  
TC, Case Temperature [oC]  
Figure 10. Max. Drain Current vs. Case Temperature  
Figure 9. Max. Safe Operating Area  
100  
D=0.5  
0.2  
0.1  
@ Notes :  
1. Z JC(t)=1.25 oC/W Max.  
θ
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*ZθJC(t)  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1 , Square Wave Pulse Duration [sec]  
Figure 11. Thermal Response  
6
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(KA5H0380R, KA5M0380R, KA5L0380R)  
1 01  
1 01  
V G  
S
T
o p  
:
1 5 V  
1 0 V  
8 .0 V  
7 .0 V  
6 .0 V  
5 .5 V  
5 .0 V  
B o tto m :4 .5 V  
1 00  
1 00  
1 5 0 o C  
@
N o te s :  
@
N o te s :  
2 5 o C  
- 2 5 o C  
1 . 3 0 0  
μ
s
P u ls e  
T
e s t  
1 . V D  
=
3 0  
V
S
2 . T C  
=
2 5 o C  
2 . 3 0 0  
μ
s
P u ls e  
T e s t  
1 0-1  
1 0-1  
1 00  
1 01  
2
4
6
8
1 0  
V D  
,
D
r a i n - S  
o
u
r c e V o l ta  
g
e
[V ]  
V G  
, G a te - S o u r c e V o l ta g e [V ]  
S
S
Figure 1. Output Characteristics  
Figure 2. Thansfer Characteristics  
F
i g  
3
.
O
n
- R  
e
s
i s ta  
n
c e v s  
.
D
r a i n  
C
u
r r e  
n t  
8
7
6
5
4
3
2
1
0
1 0  
V g s = 1 0 V  
V gs = 2 0 V  
1
25 o C  
1 50 o C  
@
N ote s :  
1. V G  
=
0V  
P uls e  
S
2. 3 00  
μ
s
T es t  
@
N o te : T j= 2 5  
0 .1  
0
1
2
3
4
0 .4  
0 .6  
0 .8  
1 .0  
ID ,D r a i n  
C u r r e n t  
V S D  
, S o u r c e - D r a i n V o l ta g e [V ]  
Figure 3. On-Resistance vs. Drain Current  
Figure 4. Source-Drain Diode Forward Voltage  
1 000  
1 0  
C
C
C
=
C
+
C
( C  
= s h o r t e d )  
s
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
i s  
s
g
s
g
d
d
V D  
= 1 6 0 V  
S
=
C
+ C  
s g  
o
s
s
d
d
=
C
g
V D  
=
4 0 0 V  
rs  
s
d
S
8
6
4
2
0
V D  
=
S
6 4 0 V  
C
i s  
s
C
o
s s  
@
N
o te  
:
ID  
= 3 .0 A  
C
rs  
s
1 00  
101  
0
5
1 0  
1 5  
te  
2 0  
[n  
2 5  
3 0  
V D  
, D r a i n - S o u r c e V o l ta g e [V ]  
Q
G ,T o ta  
l
G
a
C
h
a
r g  
e
C ]  
S
Figure 5. Capacitance vs. Drain-Source Voltage  
Figure 6. Gate Charge vs. Gate-Source Voltage  
7
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(KA5H0380R, KA5M0380R, KA5L0380R)  
1.2  
1.1  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.0  
@ Notes :  
1. VGS = 0V  
@ Notes:  
1. VGS = 10V  
2. ID = 1.5 A  
0.9  
2. ID = 250  
A
μ
0.8  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
TJ, Junction Temperature [oC]  
T
J, Junction Temperature [oC]  
Figure 7. Breakdown Voltage vs. Temperature  
Figure 8. On-Resistance vs. Temperature  
102  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Operation in This Area  
is Limited by  
R
DS(on)  
101  
100  
10  
s
μ
100  
s
μ
1
ms  
10 ms  
DC  
@
Notes  
1. TC  
:
=
10-1  
25 oC  
2. TJ  
=
150 oC  
3. Single Pulse  
10-2  
101  
102  
, Drain-Source Voltage [V]  
103  
40  
60  
80  
100  
120  
140  
TC, Case Temperature [oC]  
VDS  
Figure 10. Max. Drain Current vs. Case Temperature  
Figure 9. Max. Safe Operating Area  
100  
D=0.5  
@ Notes :  
0.2  
0.1  
1. ZθJC(t)=1.25 oC/W Max.  
2. Duty Factor, D=t1/t2  
3. TJM-TC=PDM*ZθJC(t)  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
t1 , Square Wave Pulse Duration [sec]  
100  
101  
Figure 11. Thermal Response  
8
KA5X03XX-SERIES  
Typical Performance Characteristics (Control Part) (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
1.20  
1.15  
1.20  
1.15  
1.10  
1.10  
1.05  
1.05  
Ifb 1.00  
0.95  
Fosc 1.00  
0.95  
0.90  
0.90  
0.85  
0.85  
0.80  
0.80  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
]
]
Figure 2. Feedback Source Current  
Figure 1. Operating Frequency  
1.50  
1.40  
1.30  
1.20  
1.20  
1.15  
1.10  
1.05  
Iover  
Iop 1.00  
0.95  
1.10  
1.00  
0.90  
0.80  
0.70  
0.90  
0.85  
0.80  
-40 -25  
0
25 50 75 100 125 150  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
Temperature [  
]
]
Figure 4. Peak Current Limit  
Figure 3. Operating Supply Current  
1.20  
1.15  
1.10  
1.05  
1.30  
1.20  
1.10  
1.00  
0.90  
0.80  
0.70  
0.60  
Istart  
Vstart 1.00  
0.95  
0.90  
0.85  
0.80  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
-40 -25  
0
25 50 75 100 125 150  
]
Temperature [  
]
Figure 6. Start Threshold Voltage  
Figure 5. Start up Current  
9
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
1.20  
1.15  
1.10  
1.05  
1.20  
1.15  
1.10  
1.05  
Dmax 1.00  
0.95  
Vstop 1.00  
0.95  
0.90  
0.90  
0.85  
0.85  
0.80  
0.80  
-40 -25  
0
25 50 75 100 125 150  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
Temperature []  
]
Figure 8. Maximum Duty Cycle  
Figure 7. Stop Threshold Voltage  
1.20  
1.20  
1.15  
1.10  
1.05  
1.15  
1.10  
1.05  
Vz 1.00  
0.95  
Vsd 1.00  
0.95  
0.90  
0.85  
0.80  
0.90  
0.85  
0.80  
-40 -25  
0
25 50 75 100 125 150  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
]
Temperature []  
Figure 10. Shutdown Feedback Voltage  
Figure 9. V  
Zener Voltage  
CC  
1.20  
1.15  
1.20  
1.15  
1.10  
1.10  
1.05  
1.05  
Vovp 1.00  
0.95  
Idelay 1.00  
0.95  
0.90  
0.90  
0.85  
0.85  
0.80  
0.80  
-40 -25  
0
25 50 75 100 125 150  
-40 -25  
0
25 50 75 100 125 150  
Temperature []  
Temperature []  
Figure 12. Over Voltage Protection  
Figure 11. Shutdown Delay Current  
10  
KA5X03XX-SERIES  
Typical Performance Characteristics (Continued)  
(These characteristic graphs are normalized at Ta = 25°C)  
3.00  
2.50  
2.00  
Rds(on) 1.50  
1.00  
0.50  
0.00  
-40 -25  
0
25 50 75 100 125 150  
Temperature [  
]
Figure13. Static Drain-Source on Resistance  
11  
KA5X03XX-SERIES  
Package Dimensions  
TO-220F-4L  
12  
KA5X03XX-SERIES  
Package Dimensions (Continued)  
TO-220F-4L(Forming)  
13  
KA5X03XX-SERIES  
Ordering Information  
Product Number  
KA5H0365RTU  
Package  
Marking Code  
BV  
F
R
DS(on)  
DSS  
OSC  
TO-220F-4L  
TO-220F-4L(Forming)  
TO-220F-4L  
5H0365R  
650V  
650V  
650V  
100kHz  
67kHz  
50kHz  
3.6Ω  
KA5H0365RYDTU  
KA5M0365RTU  
KA5M0365RYDTU  
KA5L0365RTU  
5M0365R  
5L0365R  
3.6Ω  
3.6Ω  
TO-220F-4L(Forming)  
TO-220F-4L  
KA5L0365RYDTU  
TO-220F-4L(Forming)  
Product Number  
KA5H0380RTU  
Package  
TO-220F-4L  
Marking Code  
BV  
F
R
DS(on)  
DSS  
OSC  
5H0380R  
800V  
800V  
800V  
100kHz  
67kHz  
50kHz  
4.6Ω  
KA5H0380RYDTU  
KA5M0380RTU  
KA5M0380RYDTU  
KA5L0380RTU  
TO-220F-4L(Forming)  
TO-220F-4L  
5M0380R  
5L0380R  
4.6Ω  
4.6Ω  
TO-220F-4L(Forming)  
TO-220F-4L  
KA5L0380RYDTU  
TO-220F-4L(Forming)  
TU :Non Forming Type  
YDTU : Forming type  
6/3/08 0.0m 001  
Stock#DSxxxxxxxx  
© 2003 Fairchild Semiconductor Corporation  
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Rev. I57  
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