KSA1304YTU [ROCHESTER]

1.5A, 150V, PNP, Si, POWER TRANSISTOR, TO-220F, 3 PIN;
KSA1304YTU
型号: KSA1304YTU
厂家: Rochester Electronics    Rochester Electronics
描述:

1.5A, 150V, PNP, Si, POWER TRANSISTOR, TO-220F, 3 PIN

局域网 放大器 晶体管
文件: 总6页 (文件大小:768K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KSA1304  
Vertical Output Applications  
Power Amplifier Applications  
Complement to KSC3296  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
- 150  
- 150  
- 5  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
V
I
I
- 1.5  
A
C
Base Current  
- 0.5  
A
B
P
Collector Dissipation (T =25°C)  
20  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
- 10  
Units  
I
I
V
V
V
= - 120V, I = 0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
= - 5V, I = 0  
- 10  
C
h
DC Current Gain  
= - 10V, I = - 500mA  
40  
75  
140  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = - 500mA, I = - 50mA  
- 1.5  
- 0.85  
V
V
CE  
BE  
C
B
V
= - 10V, I = - 500mA  
- 0.65  
- 0.75  
4
CE  
CE  
CB  
C
f
V
V
= - 10V, I = - 500mA  
MHz  
pF  
T
C
C
= - 10V, f = 1MHz  
55  
ob  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Typical Characteristics  
-2.0  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
-0.0  
IB = -150mA  
IB = -50mA  
-1.6  
-1.2  
-0.8  
-0.4  
-0.0  
IB = -40mA  
IB = -40mA  
IB = -100mA  
IB = -30mA  
IB = -20mA  
IB = -30mA  
IB = -20mA  
IB = -15mA  
IB = -10mA  
IB = -15mA  
IB = -10mA  
IB = -5mA  
IB = -5mA  
IB = 0mA  
IB = 0mA  
-0  
-4  
-8  
-12  
-16  
-20  
-0  
-4  
-8  
-12  
-16  
-20  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
-10  
1000  
VCE = -10V  
IC = 10 IB  
-1  
100  
10  
1
-0.1  
-0.01  
-0.01  
-0.1  
-1  
-10  
-0.01  
-0.1  
-1  
-10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. DC current Gain  
Figure 4. Collector-Emitter Saturation Voltage  
32  
28  
24  
20  
16  
12  
8
-10  
IC MAX. (Pulse)  
IC MAX. (DC)  
-1  
-0.1  
4
0
-0.01  
0
50  
100  
150  
-1  
-10  
-100  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
Package Demensions  
TO-220F  
2.54 ±0.20  
10.16 ±0.20  
(7.00)  
ø3.18 ±0.10  
(0.70)  
(1.00x45°)  
MAX1.47  
0.80 ±0.10  
(30  
°
)
#1  
0.35 ±0.10  
+0.10  
–0.05  
0.50  
2.76 ±0.20  
2.54TYP  
2.54TYP  
[2.54 ±0.20  
]
[2.54 ±0.20]  
9.40 ±0.20  
Dimensions in Millimeters  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
HiSeC™  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
E2CMOS™  
FACT™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench®  
QFET™  
VCX™  
FACT Quiet Series™  
QS™  
FAST®  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
FASTr™  
GTO™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
INTERNATIONAL.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2000 Fairchild Semiconductor International  
Rev. E  
Product Folder - Fairchild P/N KSA1304 - PNP Epitaxial Silicon Transistor  
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Product  
KSA1304YTU  
KSA1304OTU  
Product status  
Pricing*  
Package type  
TO-220F  
Leads  
Packing method  
RAIL  
Full Production  
Full Production  
$0.318  
$0.318  
3
3
technical support  
my Fairchild  
TO-220F  
RAIL  
* 1,000 piece Budgetary Pricing  
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