KSB1116SYTA [ROCHESTER]

1000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92;
KSB1116SYTA
型号: KSB1116SYTA
厂家: Rochester Electronics    Rochester Electronics
描述:

1000mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

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文件: 总8页 (文件大小:768K)
中文:  中文翻译
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KSB1116/1116A  
Audio Frequency Power Amplifier & Medium  
Speed Switching  
Complement to KSD1616/1616A  
TO-92  
1. Emitter 2. Collector 3. Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: KSB1116  
: KSB1116A  
-60  
-80  
V
V
CBO  
: KSB1116  
: KSB1116A  
-50  
-60  
V
V
CEO  
Emitter-Base Voltage  
Collector Current (DC)  
* Collector Current (Pulse)  
-6  
-1  
V
A
EBO  
I
I
C
-2  
A
CP  
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
0.75  
150  
W
°C  
°C  
C
T
J
T
-55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
-100  
-100  
Units  
I
I
V
V
V
= -60V, I =0  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
= -6V, I = 0  
C
h
* DC Current Gain : KSB1116  
: KSB1116A  
= -2V, I = -100mA  
135  
135  
81  
600  
400  
FE1  
C
h
V
V
= -2V, I = -1A  
C
FE2  
CE  
CE  
V
V
V
(on)  
(sat)  
(sat)  
* Base-Emitter On Voltage  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Output Capacitance  
= -2V, I = -50mA  
-600  
-650  
-0.2  
-0.9  
25  
-700  
-0.3  
-1.2  
mV  
V
BE  
CE  
BE  
C
I = -1A, I = -50mA  
C
B
I = -1A, I = -50mA  
V
C
B
C
V
= -10V, I =0, f=1MHz  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
E
f
t
t
t
Current Gain Bandwidth Product  
Turn On Time  
V
V
= -2V, I = -100mA  
70  
120  
0.07  
0.7  
T
C
= -10V, I = -100mA  
ON  
STG  
F
C
I
= -I = -10mA  
Storage Time  
B1  
B2  
µs  
V
(off)= 2~3V  
BE  
Fall Time  
0.07  
µs  
* Pulse Test: PW 350µs, Duty Cycle2%  
h
Classification  
FE  
Classification  
Y
G
L
h
135 ~ 270  
200 ~ 400  
300 ~ 600  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, January 2002  
Typical Characteristics  
-100  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0.0  
IB = -4.0mA  
IB = -250µA  
IB = -4.5mA  
IB = -3.5mA  
IB = -5.0mA  
IB = -200µA  
-80  
-60  
-40  
-20  
0
IB = -3.0mA  
IB = -2.5mA  
IB = -2.0mA  
IB = -150µA  
IB = -100µA  
IB = -50µA  
IB = -1.5mA  
IB = -1.0mA  
IB = -0.5mA  
0
-2  
-4  
-6  
-8  
-10  
0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
1000  
-10  
IC = 20 IB  
VCE = -2V  
VBE(sat)  
100  
10  
1
-1  
-0.1  
VCE(sat)  
-0.01  
-0.01  
-0.01  
-0.1  
-1  
-10  
-0.1  
-1  
-10  
IC[mA], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 3. DC current Gain  
Figure 4. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
1000  
10  
VCC = -10V  
IC = 10IB1 = -10IB2  
IE=0  
f = 1MHz  
1
100  
10  
1
tSTG  
0.1  
tF  
tON  
0.01  
-0.001  
-0.01  
-0.1  
-1  
-1  
-10  
-100  
IC[A], COLLECTOR CURRENT  
VCB [V], COLLECTOR-BASE VOLTAGE  
Figure 5. Switching Time  
Figure 6. Collector Output Capacitance  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, January 2002  
Typical Characteristics (Continued)  
1000  
-10  
VCE = -2V  
200ms  
100  
10  
1
-1  
-0.1  
-0.01  
-1  
-0.01  
-0.1  
-1  
-10  
-10  
-100  
IC[mA], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 7. Current Gain Bandwidth Product  
Figure 8. Safe Operating Area  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0
25  
50  
75  
100  
125  
150  
175  
Ta[oC], AMBIENT TEMPERATURE  
Figure 9. Power Derating  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, January 2002  
Package Demensions  
TO-92  
+0.25  
–0.15  
4.58  
0.46 ±0.10  
+0.10  
–0.05  
1.27TYP  
1.27TYP  
0.38  
[1.27 ±0.20  
]
[1.27 ±0.20]  
3.60 ±0.20  
(R2.29)  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A2, January 2002  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
ACEx™  
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FRFET™  
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STAR*POWER™  
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VCX™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
GlobalOptoisolator™  
GTO™  
HiSeC™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MicroPak™  
MICROWIRE™  
POP™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TruTranslation™  
TinyLogic™  
Power247™  
PowerTrench®  
QFET™  
QS™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
FACT™  
FACT Quiet Series™  
UHC™  
UltraFET®  
STAR*POWER is used under license  
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2002 Fairchild Semiconductor Corporation  
Rev. H4  
Product Folder - Fairchild P/N KSB1116 - PNP Epitaxial Silicon Transistor  
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KSB1116LBU  
KSB1116SYTA  
KSB1116GBU  
KSB1116YBU  
KSB1116SYBU  
KSB1116LTA  
KSB1116YTA  
KSB1116GTA  
Product status  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Full Production  
Pricing*  
Package type Leads  
Packing method  
BULK  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
TO-92  
$0.075  
$0.075  
$0.075  
$0.075  
$0.075  
$0.075  
$0.075  
$0.075  
3
3
3
3
3
3
3
3
TAPE REEL  
BULK  
BULK  
BULK  
TAPE REEL  
TAPE REEL  
TAPE REEL  
* 1,000 piece Budgetary Pricing  
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