KSC5327J69Z [FAIRCHILD]

Power Bipolar Transistor, 3.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN;
KSC5327J69Z
型号: KSC5327J69Z
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Power Bipolar Transistor, 3.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

局域网 开关 晶体管
文件: 总2页 (文件大小:34K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
NPN TRIPLE DIFFUSED  
KSC5327  
PLANER SILICON TRANSISTOR  
HIGH VOLTAGE POWER SWITCH  
SWITCHING APPLICATION  
TO-220  
· High Speed Switching  
· Wide SOA  
· High Collector-Base Voltage  
ABSOLUTE MAXIMUM RATINGS  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
Symbol  
Rating  
1200  
800  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
V
7
V
3.5  
A
ICP  
10  
A
IB  
1.5  
A
Collector Dissipation  
Junction Temperature  
Storage Temperature  
PC  
60  
W
°C  
°C  
TJ  
150  
TSTG  
-65 ~ 150  
* Pulse Test: Pulse Width = 5ms, Duty Cycle£10%  
ELECTRICAL CHARACTERISTICS (TC =25°C)  
Characteristic  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cut off Current  
Symbol  
BVCBO  
Test Conditions  
IC = 1mA, IE = 0  
Min  
1200  
800  
7
Typ  
Max  
Unit  
V
BVCEO  
BVEEO  
ICBO  
IC = 5mA, IB =0  
V
IE = 1mA, IC = 0  
V
VCB = 1200V, IE = 0  
VEB = 7V, IC = 0  
10  
10  
40  
mA  
mA  
Emitter Cutoff Current  
IEBO  
DC Current Gain  
hFE  
hFE  
1
2
VCE = 5V, IC = 0.2A  
VCE = 5V, IC = 0.8A  
IC = 1A, IB = 0.2A  
IC = 1A , IB = 0.2A  
VCB = 10V, IE = 0, f = 1MHz  
VCC = 400V,  
10  
8
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
2.0  
1.5  
V
V
Output Capacitance  
Turn On Time  
Storage Time  
Fall Time  
COB  
tON  
tSTG  
tF  
50  
pF  
ms  
ms  
ms  
0.5  
2.0  
IC = 2A = 5IB1 = -2.5 · IB2  
RL = 200W  
0.25  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
°C/W  
Thermal Resistance, Junction to Case  
2.08  
Rq jC  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
not intended to be an exhaustive list of all such trademarks.  
ACEx™  
CoolFET™  
ISOPLANAR™  
MICROWIRE™  
POP™  
PowerTrench™  
QS™  
CROSSVOLT™  
E2CMOSTM  
FACT™  
FACT Quiet Series™  
Quiet Series™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
TinyLogic™  
FAST®  
FASTr™  
GTO™  
HiSeC™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant into  
the body, or (b) support or sustain life, or (c) whose  
failure to perform when properly used in accordance  
with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life  
support device or system whose failure to perform can  
be reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or  
In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  

相关型号:

KSC5328

Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
SAMSUNG

KSC5328J69Z

Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
FAIRCHILD

KSC5337

isc Silicon NPN Power Transistor
ISC

KSC5337F

Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN
FAIRCHILD

KSC5338

High Voltage Power Switch Switching Application
FAIRCHILD

KSC5338

isc Silicon NPN Power Transistor
ISC

KSC5338D

High Voltage Power Switch Switching Application
FAIRCHILD

KSC5338D

NPN型三重扩散平面硅晶体管
ONSEMI

KSC5338DTU

NPN Triple Diffused Planar Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL
FAIRCHILD

KSC5338DTU

NPN型三重扩散平面硅晶体管
ONSEMI

KSC5338DW

High Voltage Power Switch Switching Application
FAIRCHILD

KSC5338DWTM

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin, D2PAK-3
FAIRCHILD