KSD227YBU [ROCHESTER]

300mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92;


型号：	KSD227YBU
厂家：	Rochester Electronics
描述：	300mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 放大器晶体管
文件：	总7页 (文件大小：752K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

KSD227

Low Frequency Power Amplifier

•

Complement to KSA642

Collector Power Dissipation : P =400mW

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

300

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

400

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =100µA, I =0

CBO

CEO

EBO

I =10mA, I =0

C B

I =10µA, I =0

=25V, I =0

0.1

400

0.4

µA

CBO

EBO

Emitter Cut-off Current

=3V, I =0

DC Current Gain

=1V, I =50mA

(sat)

Collector-Emitter Saturation Voltage

I =300mA, I =30mA

0.14

Classification

70 ~ 140

120 ~ 240

200 ~ 400

Rev. A1, June 2001

Typical Characteristics

1000

100

I_B= 450uA

V_CE= 1V

I_B= 400uA

I_B= 350uA

I_B= 300uA

I_B= 250uA

I_B= 200uA

I_B= 150uA

I_B= 100uA

I_B= 50uA

100

1000

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

100

V_CE= 1V

I_C= 10 I_B

V_BE(sat)

0.1

V_CE(sat)

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

I_C[mA], COLLECTOR CURRENT

V_BE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

100

I_E= 0

V_CE= 5V

f = 1MHz

100

300

V_CB[V], COLLECTOR-BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

Rev. A1, June 2001

Package Demensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A1, June 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

FAST^®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

OPTOPLANAR™

PACMAN™

POP™

STAR*POWER™

Stealth™

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E²CMOS™

EnSigna™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TruTranslation™

TinyLogic™

UHC™

Power247™

PowerTrench^®

QFET™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER^®

SMART START™

UltraFET^®

VCX™

FACT™

FACT Quiet Series™

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H3

Product Folder - Fairchild P/N KSD227 - NPN Epitaxial Silicon Transistor

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