MIC5011BM [ROCHESTER]
BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8;
| 型号： | MIC5011BM |
| 厂家： | 
Rochester Electronics |
| 描述： | BUF OR INV BASED MOSFET DRIVER, PDSO8, SOIC-8 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总13页 (文件大小：894K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC5011
Minimum Parts High- or Low-Side MOSFET Driver
General Description
Features
The MIC5011 is the “minimum parts count” member of the
Micrel MIC501X driver family. These ICs are designed to
drive the gate of an N-channel power MOSFET above the
supply rail in high-side power switch applications.The8-pin
MIC5011 is extremely easy to use, requiring only a power
FET and nominal supply decoupling to implement either a
high- or low-side switch.
• 4.75V to 32V operation
• Less than 1µA standby current in the “off” state
• Internal charge pump to drive the gate of an N-channel
power FET above supply
• Available in small outline SOIC packages
• Internal zener clamp for gate protection
• Minimum external parts count
• Can be used to boost drive to low-side power FETs
operating on logic supplies
• 25µs typical turn-on time with optional external
capacitors
The MIC5011 charges a 1nF load in 60µs typical with no
external components. Faster switching is achieved by add-
ing two 1nF charge pump capacitors. Operation down to
4.75V allows the MIC5011 to drive standard MOSFETs in
5Vlow-sideapplicationsbyboostingthegatevoltageabove
the logic supply. In addition, multiple paralleled MOSFETs
can be driven by a single MIC5011 for ultra-high current
applications.
• Implements high- or low-side drivers
Applications
• Lamp drivers
Other members of the Micrel driver family include the
MIC5013 protected 8-pin driver.
• Relay and solenoid drivers
• Heater switching
• Power bus switching
For new designs, Micrel recommends the pin-compatible
MIC5014 MOSFET driver.
Typical Applications
Ordering Information
Part Number
Standard Pb-Free
Temperature
Range
Package
14.4V
ON
MIC5011BN MIC5011YN –40ºC to +85ºC 8-pin Plastic
DIP
+
MIC5011
10µF
8
7
6
5
1
2
3
4
V+
C1
MIC5011BM MIC5011YM –40ºC to +85ºC
8-pin SOIC
Control Input
Input
Source
Gnd
Com
C2
Gate
IRF531
#6014
OFF
Figure 1. High Side Driver
Note: The MIC5011 is ESD sensitive.
5V
48V
ON
10µF
+
MIC5011
8
7
6
5
1
2
3
4
V+
C1
100W
Input
Com
C2
Control Input
Heater
Source
Gnd
Gate
IRF530
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
OFF
Figure 2. Low Side Driver
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
July 2005
1
MIC5011
MIC5011
Micrel, Inc.
Absolute Maximum Ratings (Note 1, 2)
Operating Ratings (Notes 1, 2)
Power Dissipation
+
Supply Voltage (V ), Pin 1
Input Voltage, Pin 2
Source Voltage, Pin 3
Current into Pin 3
–0.5V to 36V
–10V to V
–10V to V
50mA
–1V to 50V
150°C
1.25W
100°C/W
170°C/W
+
+
θ
θ
(Plastic DIP)
(SOIC)
JA
JA
Ambient Temperature: B version
Storage Temperature
Lead Temperature
–40°C to +85°C
–65°C to +150°C
260°C
Gate Voltage, Pin 5
Junction Temperature
(Soldering, 10 seconds)
+
Supply Voltage (V ), Pin 1
4.75V to 32V high side
4.75V to 15V low side
Pin Description (Refer to Typical Applications)
Pin Number
Pin Name
Pin Function
1
V+
Supply; must be decoupled to isolate from large transients caused by the
power FET drain. 10µF is recommended close to pins 1 and 4.
2
3
Input
Turns on power MOSFET when taken above threshold (3.5V typical). Re-
quires <1 µA to switch.
Source
Connects to source lead of power FET and is the return for the gate clamp
zener. Can safely swing to –10V when turning off inductive loads.
4
5
Ground
Gate
Drives and clamps the gate of the power FET. Will be clamped to approxi-
mately –0.7V by an internal diode when turning off inductive loads.
6, 7, 8
C2, Com, C1
Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect.
Pin Configuration
MIC5011
1
2
3
4
8
7
6
5
C1
V+
Com
Input
Source C2
Gnd Gate
MIC5011
2
July 2005
MIC5011
Micrel, Inc.
Electrical Characteristics (Note 3)
Test circuit. TA = –55°C to +125°C, V+ = 15V, all switches open, unless otherwise specified.
Parameter
Conditions
V+ = 32V
Min Typical Max
Units
µA
mA
mA
V
Supply Current, I1
VIN = 0V, S2 closed
VIN = V+ = 32V
0.1
8
10
20
4
V+ = 5V
V+ = 4.75V
VIN = 5V, S2 closed
Adjust VIN for VGATE low
Adjust VIN for VGATE high
Adjust VIN for VGATE high
VIN = 0V
1.6
Logic Input Voltage
2
4.5
5.0
–1
V
V+ = 15V
V+ = 32V
V
Logic Input Current, I2
µA
µA
pF
V
VIN = 32V
1
Input Capacitance
Gate Drive, VGATE
Pin 2
5
10
S1, S2 closed,
VS = V+, VIN = 5V
S2 closed, VIN = 5V
V+ = 4.75V, IGATE = 0, VIN = 4.5V
V+ = 15V, IGATE = 100µA, VIN = 5V
V+ = 15V, VS = 15V
7
24
11
11
27
V
Zener Clamp,
12.5
13
15
16
50
V
VGATE – VSOURCE
V+ = 32V, VS = 32V
V
Gate Turn-on Time, tON
(Note 4)
VIN switched from 0 to 5V; measure time
for VGATE to reach 20V
25
µs
Gate Turn-off Time, tOFF
VIN switched from 5 to 0V; measure time
for VGATE to reach 1V
4
10
µs
Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified Operating Ratings.
Note 2 The MIC5011 is ESD sensitive.
Note 3 Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire
range. Typicals are characterized at 25°C and represent the most likely parametric norm.
Note 4 Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Appli-
cations Information. Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical values
shown.
Test Circuit
V+
+
MIC5011
1µF
1
2
3
4
8
7
6
5
V+
C1
Com
C2
1nF
1nF
Input
Source
Gnd
VGATE
VIN
500Ω
1W
Gate
1nF
S1
S2
I5
VS
July 2005
3
MIC5011
MIC5011
Micrel, Inc.
Typical Characteristics (Continued)
DC Gate Voltage
above Supply
Supply Current
12
14
12
10
8
10
8
6
6
4
4
2
0
2
0
0
5
10 15 20 25 30 35
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
High-side Turn-on Time*
350
300
250
200
150
100
50
140
120
100
80
C
=1 nF
GATE
C2=1 nF
C
GATE
=1 nF
60
40
20
0
0
0
3
6
9
12
15
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
High-side Turn-on Time*
High-side Turn-on Time*
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C
=10 nF
GATE
C2=1 nF
C
=10 nF
GATE
0
0
3
6
9
12
15
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
* Time for gate to reach V+ + 5V in test circuit with VS = V+ – 5V.
MIC5011
4
July 2005
MIC5011
Micrel, Inc.
Typical Characteristics (Continued)
Low-side Turn-on Time
Low-side Turn-on Time
for Gate = 5V
for Gate = 5V
1000
1000
300
100
30
C2=1 nF
300
C
GATE
=10 nF
C
GATE
=10 nF
100
30
10
3
10
C
GATE
=1 nF
C
GATE
=1 nF
3
1
1
0
0
0
3
6
9
12
15
15
15
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Low-side Turn-on Time
for Gate = 10V
Low-side Turn-on Time
for Gate = 10V
3000
1000
300
100
30
3000
1000
300
100
30
C2=1 nF
C
GATE
=10 nF
C
GATE
=10 nF
C
GATE
=1 nF
C
=1 nF
GATE
10
10
3
3
3
6
9
12
0
3
6
9
12
15
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Turn-on Time
Turn-off Time
2.0
1.75
1.5
50
40
C
=10 nF
GATE
30
20
1.25
1.0
C
=1 nF
12
10
GATE
0.75
0.5
0
3
6
9
–25
0
25
50 75 100 125
SUPPLY VOLTAGE (V)
DIE TEMPERATURE (°C)
July 2005
5
MIC5011
MIC5011
Micrel, Inc.
Charge Pump
Charge Pump
Output Current
Output Current
250
200
150
100
50
1.0
0.8
+
V
=V
GATE
+
=V
V
GATE
0.6
0.4
+
V
GATE
=V +5V
+
V
GATE
=V +5V
0.2
0
C2=1 nF
+
VS=V –5V
+
VS=V –5V
0
0
5
10
15 20 25
30
0
5
10
15 20 25
30
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Block Diagram
Ground V+
C1Com C2
1
8
7
6
4
MIC5011
CHARGE
PUMP
5 Gate
500Ω
12.5V
Source
2
LOGIC
Input
3
Applications Information
Functional Description (Refer to Block Diagram)
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60µs typical. With the addition of 1nF capacitors
at C1 and C2, the turn-on time is reduced to 25µs typical
(see Figure 3). The charge pump is capable of pumping the
gate up to over twice the supply voltage. For this reason, a
zener clamp (12.5V typical) is provided between the gate
The MIC5011 functions are controlled via a logic block
connected to the input pin 2. When the input is low, all
functions are turned off for low standby current and the
gate of the power MOSFET is also held low through 500Ω
to an N-channel switch. When the input is taken above the
turn-on threshold (3.5V typical), the N-channel switch turns
off and the charge pump is turned on to charge the gate
of the power FET.
pin 5 and source pin 3 to prevent exceeding the V rating
GS
of the MOSFET at high supplies.
MIC5011
6
July 2005
MIC5011
Micrel, Inc.
Applications Information (Continued)
and it dissipates the energy stored in the load inductance.
The MIC5011 source pin (3) is designed to withstand this
negativeexcursionwithoutdamage. Externalclampdiodes
are unnecessary.
Construction Hints
Highcurrentpulsecircuitsdemandequipmentandassembly
techniques that are more stringent than normal, low current
lab practices. The following are the sources of pitfalls most
oftenencounteredduringprototyping.Supplies:manybench
power supplies have poor transient response. Circuits that
are being pulse tested, or those that operate by pulse-width
modulation will produce strange results when used with a
supply that has poor ripple rejection, or a peaked transient
response. Always monitor the power supply voltage that
appears at the drain of a high-side driver (or the supply
side of the load in a low-side driver) with an oscilloscope.
It is not uncommon to find bench power supplies in the
1 kW class that overshoot or undershoot by as much as
50% when pulse loaded. Not only will the load current and
voltage measurements be affected, but it is possible to
over-stress various components—especially electrolytic
capacitors—with possibly catastrophic results.A10µF sup-
ply bypass capacitor at the chip is recommended.
Low-Side Driver (Figure 2). A key advantage of the low-
side topology is that the load supply is limited only by the
MOSFET BVDSS rating. Clamping may be required to
protecttheMOSFETdrainterminalfrominductiveswitching
transients. The MIC5011 supply should be limited to 15V in
low-side topologies, otherwise a large current will be forced
through the gate clamp zener.
Low-side drivers constructed with the MIC501X family are
also fast; the MOSFET gate is driven to near supply imme-
diately when commanded ON. Typical circuits achieve 10V
enhancement in 10µs or less on a 12 to 15V supply.
Modifying Switching Times (Figure 3). High-side switch-
ing times can be improved by a factor of 2 or more by
adding external charge pump capacitors of 1nF each. In
cost-sensitive applications, omit C1 (C2 has a dominant
effect on speed).
Residual Resistances: Resistances in circuit connections
may also cause confusing results. For example, a circuit
may employ a 50mΩ power MOSFET for low drop, but
careless construction techniques could easily add 50 to
100mΩ resistance. Do not use a socket for the MOSFET. If
the MOSFETis a TO-220 type package, make high-current
drain connections to the tab. Wiring losses have a profound
effect on high-current circuits. A floating millivoltmeter can
identify connections that are contributing excess drop
under load.
Do not add external capacitors to the MOSFET gate.Add a
resistor (1kΩ to 51kΩ) in series with the gate to slow down
the switching time.
14.4V
ON
+
MIC5011
10µF
8
7
6
5
1
2
3
4
V+
C1
1nF
1nF
Input
Com
Circuit Topologies
Control Input
Source C2
Gnd
The MIC5011 is suited for use with standard MOSFETs in
high-orlow-sidedriverapplications.Inaddition,theMIC5011
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source
output. Low voltage, high-side drivers (such as shown in
Figure 1) are the slowest; their speed is reflected in the
gate turn-on time specifications. The fastest drivers are
the low-side and bootstrapped high-side types (Figures 2
and 4). Load current switching times are often much faster
than the time to full gate enhancement, depending on the
circuit type, the MOSFET, and the load. Turn-off times are
Gate
IRF531
OFF
LOAD
Figure 3. High Side Driver with
External Charge Pump Capacitors
essentially the same for all circuits (less than 10µs to V
GS
Bootstrapped High-Side Driver (Figure 4). The speed
of a high-side driver can be increased to better than 10µs
by bootstrapping the supply off of the MOSFET source.
This topology can be used where the load is pulse-width
modulated (100Hz to 20kHz), or where it is energized con-
tinuously.TheSchottkybarrierdiodepreventstheMIC5011
supply pin from dropping more than 200mV below the drain
supply, and it also improves turn-on time on supplies of less
than 10V. Since the supply current in the “off” state is only a
small leakage, the 100nF bypass capacitor tends to remain
charged for several seconds after the MIC5011 is turned
off. In a PWM application the chip supply is sustained at
a higher potential than the system supply, which improves
switching time.
= 1V). The choice of one topology over another is based on
a combination of considerations including speed, voltage,
and desired system characteristics.
High-Side Driver (Figure 1). The high-side topology works
+
well down to V = 7V with standard MOSFETs. From 4.75 to
7V supply, a logic-level MOSFET can be substituted since
the MIC5011 will not reach 10V gate enhancement (10V is
the maximum rating for logic-compatible MOSFETs).
High-side drivers implemented with MIC501X drivers are
self-protectedagainstinductiveswitchingtransients.During
turn-off an inductive load will force the MOSFET source 5V
or more below ground, while the MIC5011 holds the gate at
ground potential. The MOSFET is forced into conduction,
July 2005
7
MIC5011
MIC5011
Micrel, Inc.
Applications Information (Continued)
7 to 15V
1N5817
1N4001 (2)
100nF
+
15V
10µF
MIC5011
33kΩ
1
2
3
4
8
7
6
5
33pF
V+
C1
Com
C2
To MIC5011
Input
100kΩ
4N35
Control Input
Input
MPSA05
Source
Gnd
Gate
IRF540
10mA
Control Input
100kΩ
1kΩ
LOAD
Figure 4. Bootstrapped
High-Side Driver
Figure 5. Improved
Opto-Isolator Performance
Opto-Isolated Interface (Figure 5).Although the MIC5011
has no special input slew rate requirement, the lethargic
transitions provided by an opto-isolator may cause oscil-
lations on the rise and fall of the output. The circuit shown
accelerates the input transitions from a 4N35 opto-isolator
by adding hysteresis. Opto-isolators are used where the
control circuitry cannot share a common ground with the
MIC5011 and high-current power supply, or where the
control circuitry is located remotely. This implementation is
intrinsically safe; if the control line is severed the MIC5011
will turn OFF.
compatible with control boxes such as the CR2943 series
(GE). The circuit is configured so that if both switches close
simultaneously, the “off” button has precedence.
This application also illustrates how two (or more) MOS-
FETs can be paralleled. This reduces the switch drop, and
distributes the switch dissipation into multiple packages.
High-VoltageBootstrap(Figure7).AlthoughtheMIC5011
is limited to operation on 4.75 to 32V supplies, a floating
bootstrap arrangement can be used to build a high-side
switchthatoperatesonmuchhighervoltages.TheMIC5011
and MOSFET are configured as a low-side driver, but the
load is connected in series with ground.
Industrial Switch (Figure 6). The most common manual
control for industrial loads is a push button on/off switch.
The “on” button is physically arranged in a recess so that
in a panic situation the “off” button, which extends out
from the control box, is more easily pressed. This circuit is
Power for the MIC5011 is supplied by a charge pump. A
20kHz square wave (15Vp-p) drives the pump capacitor
and delivers current to a 100µF storage capacitor. A zener
24V
+
10µF
100kΩ
1
MIC5011
8
7
6
5
ON
V+
C1
Com
C2
CR2943-NA102A
(GE)
2
3
4
Input
Source
Gnd
OFF
Gate
IRFP044 (2)
330kΩ
LOAD
Figure 6. 50-Ampere
Industrial Switch
MIC5011
8
July 2005
MIC5011
Micrel, Inc.
Applications Information (Continued)
15V
+
100µF
90V
1N4746
MIC5011
1
2
3
4
8
33kΩ
V+
C1
Com
C2
1N4003 (2)
33pF
7
6
5
Input
MPSA05
100kΩ
Source
Gnd
1nF
Gate
IRFP250
4N35
10mA
Control Input
100kΩ
1/4 HP, 90V
5BPB56HAA100
(GE)
M
1kΩ
100nF
200V
1N4003
15Vp-p, 20kHz
Squarewave
Figure 7. High-Voltage
Bootstrapped Driver
diode limits the supply to 18V. When the MIC5011 is off,
powerissuppliedbyadiodeconnectedtoa15Vsupply.The
circuit of Figure 5 is put to good use as a barrier between
low voltage control circuitry and the 90V motor supply.
Cross conduction increases output device power dissipa-
tion. Speed is also important, since PWM control requires
the outputs to switch in the 2 to 20kHz range.
The circuit of Figure 8 utilizes fast configurations for both
the top- and bottom-side drivers. Delay networks at each
input provide a 2 to 3µs dead time effectively eliminating
cross conduction. Two of these circuits can be connected
together to form an H-bridge for locked antiphase or sign/
magnitude control.
Half-Bridge Motor Driver (Figure 8). Closed loop control
of motor speed requires a half-bridge driver. This topology
presents an extra challenge since the two output devices
should not cross conduct (shoot-through) when switching.
15V
1N5817
1N4001 (2)
100nF
+
1N4148
MIC5011
1
2
3
4
8
7
6
5
1µF
V+
C1
Com
C2
Input
Source
Gnd
220pF
22kΩ
Gate
IRF541
PWM
INPUT
15V
+
12V,
10A Stalled
M
10µF
MIC5011
V+ C1
Input
8
7
6
5
1
2
3
4
10kΩ
1nF
Com
Source C2
Gnd
22kΩ
Gate
IRF541
2N3904
Figure 8. Half-Bridge
Motor Driver
July 2005
9
MIC5011
MIC5011
Micrel, Inc.
Applications Information (Continued)
12V
12V
+
10µF
MIC5011
8
1
2
3
4
V+
Input
Source C2
Gnd
C1
+
10µF
7
6
5
MIC5011
Com
1
2
3
4
8
7
6
5
V+
C1
Com
C2
R
100kΩ
47µF
1N4148
330kΩ 330kΩ
Input
Gate
IRFZ44
Source
Gnd
+
IRFZ44
Gate
1N4148
100nF
10kΩ
100Ω
OUTPUT
(Delay=2.5s)
M
T
12V
START
Figure 9. 30-Ampere
Time-Delay Relay
RUN
STOP
Time-DelayRelay(Figure9).TheMIC5011formsthebasis
ofasimpletime-delayrelay.Asshown,thedelaycommences
when power is applied, but the 100kΩ/1N4148 could be
independently driven from an external source such as a
switch or another high-side driver to give a delay relative
to some other event in the system. Hysteresis has been
added to guarantee clean switching at turn-on.
Figure 10. Motor Stall
Shutdown
MotorDriverwithStallShutdown(Figure10).Tachometer
feedback can be used to shut down a motor driver circuit
when a stall condition occurs. The control switch is a 3-way
type; the “START” position is momentary and forces the
driver ON. When released, the switch returns to the “RUN”
position, and the tachometer's output is used to hold the
MIC5011 input ON. If the motor slows down, the tach output
is reduced, and the MIC5011 switches OFF. Resistor “R”
sets the shutdown threshold.
15V
+
Electronic Governor (Figure 11). The output of an ac
tachometer can be used to form a PWM loop to maintain
the speed of a motor. The tachometer output is rectified,
partially filtered, and fed back to the input of the MIC5011.
When the motor is stalled there is no tachometer output,
and MIC5011 input is pulled high delivering full power to
the motor. If the motor spins fast enough, the tachometer
output is sufficient to pull the MIC5011 input low, shutting
the output off. Since the rectified waveform is only partially
filtered, the input oscillates around its threshold causing
the MIC5011 to switch on and off at the frequency of the
tachometer signal.APWM action results since the average
dc voltage at the input decreases as the motor spins faster.
The 1kΩ potentiometer is used to set the running speed of
the motor. Loop gain (and speed regulation) is increased
by increasing the value of the 100nF filter capacitor.
10µF
MIC5011
330kΩ
8
7
6
5
1
2
3
4
V+
C1
330kΩ
Input
Source
Gnd
1nF
Com
C2
Gate
IRF541
1N4148
100nF
M
T
15V
1kΩ
The performance of such a loop is imprecise, but stable
and inexpensive. A more elaborate loop would consist of a
PWM controller and a half-bridge.
Figure 11. Electronic Governor
MIC5011
10
July 2005
MIC5011
Micrel, Inc.
ON. C1 is discharged, and C2 is charged to supply through
Q5. For the second phase Q4 turns off and Q3 turns on,
pushing pin C2 above supply (charge is dumped into the
gate). Q3 also charges C1. On the third phase Q2 turns
off and Q1 turns on, pushing the common point of the two
capacitors above supply. Some of the charge in C1 makes
its way to the gate. The sequence is repeated by turning
Q2 and Q4 back on, and Q1 and Q3 off.
Applications Information (Continued)
Gate Control Circuit
When applying the MIC5011, it is helpful to understand the
operation of the gate control circuitry (see Figure 12). The
gate circuitry can be divided into two sections: 1) charge
pump (oscillator, Q1-Q5, and the capacitors) and 2) gate
turn-off switch (Q6).
In a low-side application operating on a 12 to 15V supply,
the MOSFET is fully enhanced by the action of Q5 alone.
On supplies of more than approximately 14V, current flows
directly from Q5 through the zener diode to ground. To
prevent excessive current flow, the MIC5011 supply should
be limited to 15V in low-side applications.
When the MIC5011 is in the OFF state, the oscillator is
turned off, thereby disabling the charge pump. Q5 is also
turned off, and Q6 is turned on. Q6 holds the gate pin (G)
at ground potential which effectively turns the external
MOSFET off.
Q6 is turned off when the MIC5011 is commanded on, and
Q5 pulls the gate up to supply (through 2 diodes). Next,
the charge pump begins supplying current to the gate. The
gate accepts charge until the gate-source voltage reaches
12.5V and is clamped by the zener diode.
The action of Q5 makes the MIC5011 operate quickly in
low-side applications. In high-side applications Q5 pre-
charges the MOSFET gate to supply, leaving the charge
pump to carry the gate up to full enhancement 10V above
supply. Bootstrapped high-side drivers are as fast as low-
side drivers since the chip supply is boosted well above
the drain at turn-on.
A2-output, three-phase clock switches Q1-Q4, providing a
quasi-tripling action. During the initial phase Q4 and Q2 are
+
V
Q5
Q3
Q1
125pF
125pF
C2
C1
COM
C1
C2
Q2
Q4
G
S
100 kHz
OSCILLATOR
500Ω
GATE CLAMP
ZENER
12.5V
OFF
ON
Q6
Figure 12. Gate Control
Circuit Detail
July 2005
11
MIC5011
MIC5011
Micrel, Inc.
Package Information
PIN 1
DIMENSIONS:
INCH (MM)
0.380 (9.65)
0.370 (9.40)
0.255 (6.48)
0.245 (6.22)
0.135 (3.43)
0.125 (3.18)
0.300 (7.62)
0.013 (0.330)
0.010 (0.254)
0.380 (9.65)
0.320 (8.13)
0.018 (0.57)
0.100 (2.54)
0.130 (3.30)
0.0375 (0.952)
8-Pin Plastic DIP (N)
0.026 (0.65)
MAX)
PIN 1
0.157 (3.99)
0.150 (3.81)
DIMENSIONS:
INCHES (MM)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
TYP
45°
0.0098 (0.249)
0.0040 (0.102)
0.010 (0.25)
0.007 (0.18)
0°–8°
0.197 (5.0)
0.189 (4.8)
0.050 (1.27)
0.016 (0.40)
SEATING
PLANE
0.064 (1.63)
0.045 (1.14)
0.244 (6.20)
0.228 (5.79)
8-Pin SOIC (M)
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 1998 Micrel, Inc.
MIC5011
12
July 2005
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