MMPQ2222 [ROCHESTER]
500mA, 30V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SOIC-16;
| 型号： | MMPQ2222 |
| 厂家： | 
Rochester Electronics |
| 描述： | 500mA, 30V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SOIC-16 PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMPQ2222
B4
E4
NPN Multi-Chip General Purpose Amplifier
B3
E3
B2
•
This device is for use as a medium power amplifier and switch
requiring collector currents up to 500mA.
Sourced from process 19.
E2
B1
C4
E1
C4
C3
•
C3
C2
C2
C1
C1
SOIC-16
Mark: MMPQ2222
Absolute Maximum Ratings * T =25°C unless otherwise noted
a
Symbol
Parameter
Value
30
Units
V
V
V
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
CEO
60
V
CBO
EBO
5.0
V
I
- Continuous
500
mA
°C
C
T , T
Operating and Storage Junction Temperature Range
- 55 ~ +155
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V
V
V
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
I
I
= 10mA, I = 0
30
60
V
V
(BR)CEO
(BR)CBO
(BR)EBO
C
C
C
B
= 10µA, I = 0
E
= 10µA, I = 0
5.0
V
C
I
V
V
= 50V, I = 0
50
50
nA
nA
CBO
CB
EB
E
I
Emitter Cutoff Current
= 3.0V, I = 0
C
EBO
On Characteristics *
h
DC Current Gain
I
I
I
= 10mA, V = 10V
75
100
50
FE
C
C
C
CE
= 150mA, V = 1.0V *
CE
= 150mA, V = 1.0V *
CE
V
V
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I
I
= 150mA, I = 15mA
0.4
1.6
V
V
CE(sat)
BE(sat)
C
C
B
= 500mA, I = 50mA
B
I
I
= 150mA, I = 15mA
1.3
2.6
V
V
C
C
B
= 500mA, I = 50mA
B
Small Signal Characteristics
f
Current GAin Bandwidth Product
I
= 20mA, V = 20V,
300
MHz
T
C
CE
f = 100MHz
C
C
Output Capacitance
Input Capacitance
Noise Figure
V
V
= 10V, I = 0, f = 100kHz
4.0
20
pF
pF
dB
obo
ibo
CB
EB
E
= 0.5V, I = 0, f = 100kHz
E
NF
I
= 100µA, V = 10V,
2.0
C
CE
R
= 1.0kΩ, f = 1.0kHz
S
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Max.
Units
P
Total Device Dissipation
Derate above 25°C
1000
8.0
mW
mW/°C
D
R
Thermal Resistance, Junction to Ambient
Effective 4 Die
θJA
125
240
°C/W
°C/W
Each Die
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
Typical Characteristics
vs Collector Current
Voltage vs Collector Current
500
400
300
200
100
0
0.4
0.3
0.2
0.1
V
= 5V
CE
β = 10
125 °C
25 °C
125 °C
25 °C
- 40 °C
- 40 °C
0.1
0.3
1
3
10
30
100 300
1
10
100
500
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Voltage vs Collector Current
Collector Current
1
β = 10
1
0.8
0.6
0.4
V
= 5V
CE
- 40 °C
25 °C
0.8
0.6
0.4
0.2
- 40 °C
25 °C
125 °C
125 °C
0.1
1
10
25
1
10
100
500
I C - COLLECTOR CURRENT (mA)
I
C - COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
500
100
20
16
12
8
f = 1 MHz
V
= 40V
CB
10
1
C
te
0.1
C
ob
4
25
50
75
100
125
150
0.1
1
10
100
TA - AMBIENT TEMPERATURE (°C)
REVERSE BIAS VOLTAGE (V)
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
Figure 5. Collector Cutoff Current
vs Ambient Temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
Typical Characteristics (Continued)
Common Emitter Characteristics
1.00
0.75
0.50
0.25
0.00
8
6
4
2
0
V
T
= 10 V
= 25oC
CE
A
h
oe
h
h
re
fe
h
ie
0
25
50
75
100
125
150
0
10
20
30
40
50
60
TC [OC], CASE TEMPERATURE
IC - COLLECTOR CURRENT (mA)
Figure 7. Power Dissipation vs
Ambient Temperature
Figure 8. Common Emitter Characteristics
Common Emitter Characteristics
Common Emitter Characteristics
2.4
2
1.3
I
= 10 mA
T
= 25oC
A
V
I
= 10 V
= 10 mA
C
CE
h
1.25
fe
h
C
re
h
ie
1.2
1.15
1.1
h
fe
1.6
1.2
0.8
0.4
0
h
ie
1.05
1
h
oe
h
h
0.95
0.9
re
0.85
0.8
oe
0.75
0
20
40
60
80
100
0
5
10
15
20
25
30
35
TA - AMBIENT TEMPERATURE (o C)
VCE - COLLECTOR VOLTAGE (V)
Figure 9. Common Emitter Characteristics
Figure 10. Common Emitter Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
Test Circuit
30 V
200 Ω
16 V
1.0 KΩ
0
≤ 200ns
500 Ω
Figure 1. Saturated Turn-On Switching Time
6.0 V
- 1.5 V
1k
37 Ω
30 V
1.0 KΩ
0
≤ 200ns
50 Ω
Figure 2. Saturated Turn-Off Switching Time
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
Package Dimensions
SOIC-16
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A, October 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST®
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
Power247™
Stealth™
A
CEx™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QS™
HiSeC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
EcoSPARK™
I2C™
MSXPro™
OCX™
OCXPro™
TINYOPTO™
TruTranslation™
UHC™
E2CMOS™
i-Lo™
ImpliedDisconnect™
EnSigna™
FACT™
FACT Quiet Series™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
SPM™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I13
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