MMSZ4691ET1 [ROCHESTER]
6.2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN;
| 型号： | MMSZ4691ET1 |
| 厂家： | 
Rochester Electronics |
| 描述： | 6.2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425-04, 2 PIN 测试 光电二极管 |
| 文件： | 总6页 (文件大小：755K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMSZ4678ET1 Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
http://onsemi.com
Features
• 500 mW Rating on FR−4 or FR−5 Board
1
2
• Wide Zener Reverse Voltage Range − 1.8 V to 43 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Peak Power − 225 W (8 x 20 ms)
Cathode
Anode
SOD−123
CASE 425
STYLE 1
2
• Pb−Free Packages are Available
1
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
MARKING DIAGRAM
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xxx M G
1
G
MAXIMUM RATINGS
xxx = Device Code (Refer to page 2)
Rating
Symbol
Max
Unit
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Peak Power Dissipation @ 20 ms (Note 1)
P
225
W
pk
@ T ≤ 25°C
L
Total Power Dissipation on FR−5 Board,
P
D
(Note 2) @ T = 75°C
Derated above 75°C
500
6.7
mW
mW/°C
ORDERING INFORMATION
L
†
Device
Package
Shipping
Thermal Resistance, (Note 3)
Junction−to−Ambient
R
340
°C/W
°C/W
°C
q
JA
MMSZ4xxxET1
SOD−123
3000/Tape & Reel
3000/Tape & Reel
Thermal Resistance, (Note 3)
Junction−to−Lead
R
q
JL
150
MMSZ4xxxET1G SOD−123
(Pb−Free)
Junction and Storage Temperature Range
T , T
J
−55 to
+150
stg
MMSZ4xxxET3
SOD−123 10000/Tape & Reel
MMSZ4xxxET3G SOD−123 10000/Tape & Reel
(Pb−Free)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 4
MMSZ4678ET1/D
MMSZ4678ET1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless
A
I
otherwise noted, V = 0.95 V Max. @ I = 10 mA)
F
F
I
F
Symbol
Parameter
V
Reverse Zener Voltage @ I
Reverse Current
Z
ZT
I
ZT
V
V
R
I
Reverse Leakage Current @ V
Reverse Voltage
Z
R
R
V
I
V
R
ZT
F
V
I
R
I
Forward Current
F
V
Forward Voltage @ I
F
F
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 0.9 V Max. @ I = 10 mA)
A
F
F
Zener Voltage (Note 1)
Leakage Current
V
(V)
@ I
I @ V
R R
Z
ZT
Device
Marking
Min
3.13
Nom
3.3
4.7
5.1
5.6
6.2
6.8
7.5
10
Max
3.47
mA
mA
7.5
10
V
1.5
3
Device*
MMSZ4684ET1
MMSZ4688ET1, G
MMSZ4689ET1, G
MMSZ4690ET1
MMSZ4691ET1
MMSZ4692ET1
MMSZ4693ET1
MMSZ4697ET1
MMSZ4699ET1
MMSZ4701ET1, G
MMSZ4702ET1, G
MMSZ4703ET1
MMSZ4705ET1
MMSZ4709ET1
MMSZ4711ET1
MMSZ4717ET1
CG3
CG7
CG8
CG9
CH1
CH2
CH3
CH7
CH9
CJ2
CJ3
CJ4
CJ6
CK1
CK3
CK9
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
4.47
4.94
4.85
5.36
10
3
5.32
5.88
10
4
5.89
6.51
10
5
6.46
7.14
10
5.1
5.7
7.6
9.1
10.6
11.4
12.1
13.6
18.2
20.4
32.6
7.13
7.88
10
9.50
10.50
12.60
14.7
1
11.40
13.3
12
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
14
14.25
15.20
17.10
22.80
25.65
40.85
15
15.75
16.80
18.90
25.20
28.35
45.15
16
18
24
27
43
1. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T = 30°C 1°C.
L
*The “G’’ suffix indicates Pb−Free package available.
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2
MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
100
TYPICAL T VALUES
TYPICAL T VALUES
C
C
V
@ I
ZT
Z
V
@ I
ZT
Z
10
2
1
0
−1
−2
−3
1
2
3
4
5
6
7
8
9
10
11
12
10
100
V
, NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 1. Temperature Coefficients
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
(Temperature Range −55°C to +150°C)
1.2
1.0
0.8
0.6
1000
100
10
RECTANGULAR
WAVEFORM, T = 25°C
A
P
versus T
L
D
P
versus T
A
D
0.4
0.2
0
1
0
25
50
75
100
125
150
0.1
1
10
100
1000
T, TEMPERATURE (°C)
PW, PULSE WIDTH (ms)
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
100
10
1000
100
10
T = 25°C
Z(AC)
f = 1 kHz
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
J
I
= 0.1 I
Z(DC)
I = 1 mA
Z
5 mA
20 mA
75°C 25°C
0.6 0.7
0°C
150°C
1
1
1
10
V , NOMINAL ZENER VOLTAGE
100
0.4
0.5
0.8
0.9
1.0
1.1 1.2
V , FORWARD VOLTAGE (V)
F
Z
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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3
MMSZ4678ET1 Series
TYPICAL CHARACTERISTICS
1000
100
1000
T = 25°C
A
0 V BIAS
1 V BIAS
100
10
1
+150°C
BIAS AT
50% OF V NOM
0.1
0.01
Z
10
1
+25°C
−55°C
0.001
0.0001
0.00001
1
10
100
0
10
20
30
40
50
60
70
80
90
V , NOMINAL ZENER VOLTAGE (V)
Z
V , NOMINAL ZENER VOLTAGE (V)
Z
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
10
100
10
T = 25°C
A
T = 25°C
A
1
1
0.1
0.01
0.1
0.01
10
30
50
70
90
0
2
4
6
8
10
12
V , ZENER VOLTAGE (V)
Z
V , ZENER VOLTAGE (V)
Z
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
100
PEAK VALUE I
@ 8 ms
RSM
t
r
90
80
70
60
50
40
30
20
PULSE WIDTH (t ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
P
HALF VALUE I
/2 @ 20 ms
RSM
t
P
10
0
0
20
40
60
80
t, TIME (ms)
Figure 11. 8 × 20 ms Pulse Waveform
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4
MMSZ4678ET1 Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
NOTES:
D
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
MILLIMETERS
INCHES
DIM MIN
NOM
1.17
0.05
0.61
−−−
MAX
MIN
0.037
0.000
0.020
−−−
NOM
0.046
0.002
0.024
−−−
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
−−−
A
A1
b
0.94
0.00
0.51
−−−
1.35
0.10
0.71
0.15
1.80
2.84
3.86
−−−
c
H
E
E
D
1.40
2.54
3.56
1.60
2.69
3.68
−−−
0.055
0.100
0.140
0.010
0.063
0.106
0.145
−−−
E
H
E
L
0.25
STYLE 1:
L
PIN 1. CATHODE
2. ANODE
2
C
b
SOLDERING FOOTPRINT*
0.91
0.036
1.22
0.048
2.36
0.093
4.19
0.165
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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MMSZ4678ET1/D
相关型号：
MMSZ4691T1
Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC, CASE 425, 2 PIN
MOTOROLA
MMSZ4691T3
6.2V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, CASE 425, 2 PIN
MOTOROLA
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