NTK3142PT5G [ROCHESTER]
215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN;
| 型号： | NTK3142PT5G |
| 厂家： | 
Rochester Electronics |
| 描述： | 215mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 631AA-01, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：804K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTK3142P
Small Signal MOSFET
−20 V, −280 mA, P−Channel with ESD
Protection, SOT−723
Features
• Enables High Density PCB Manufacturing
• 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
• Low Voltage Drive Makes this Device Ideal for Portable Equipment
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V
R
TYP
I Max
D
(BR)DSS
DS(on)
• Low Threshold Levels, 1.8 V R
Rating
2.7 W @ −4.5 V
DS(on)
−280 mA
−20 V
• Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
4.1 W @ −2.5 V
6.1 W @ −1.8 V
• Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology.
• This is a Pb−Free Device
SOT−723 (3−LEAD)
Applications
3
• Interfacing, Switching
• High Speed Switching
• Cellular Phones, PDA’s
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
1
2
V
−20
8.0
V
V
DSS
Top View
Gate−to−Source Voltage
V
GS
1 − Gate
Continuous Drain
Current (Note 1)
T = 25°C
−260
−185
−280
400
A
Steady
State
2 − Source
3 − Drain
T = 85°C
A
I
D
mA
t v 5 s T = 25°C
A
Power Dissipation
(Note 1)
Steady
State
MARKING DIAGRAM
T = 25°C
A
P
mW
mA
D
t v 5 s
500
−215
−155
280
KB M
1
CASE 631AA
Continuous Drain
Current (Note 2)
T = 25°C
A
I
D
SOT−723
T = 85°C
A
Steady
State
Power Dissipation
(Note 2)
P
D
T = 25°C
A
mW
mA
°C
KB
M
= Specific Device Code
= Date Code
Pulsed Drain Current
t = 10 ms
I
−310
p
DM
Operating Junction and Storage Temperature
T ,
−55 to
150
J
T
STG
ORDERING INFORMATION
Source Current (Body Diode) (Note 2)
I
S
−240
mA
†
Device
Package
Shipping
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
T
L
NTK3142PT1G
SOT−723 4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
(Pb−Free) 4 mm Pitch
NTK3142PT5G
SOT−723 8000/Tape & Reel
(Pb−Free) 2 mm Pitch
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
November, 2009 − Rev. 2
NTK3142P/D
NTK3142P
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
315
250
440
Unit
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
R
R
R
q
q
q
JA
JA
JA
°C/W
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −100 mA
−20
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= −100 mA, Reference to 25°C
14
(BR)DSS
mV/°C
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−1.0
−2.0
$1
DSS
GS
J
mA
mA
V
= −16 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
= 5 V
GSS
DS
GS
V
−0.4
−1.3
V
mV/°C
W
GS(TH)
V
= V , I = −250 mA
DS D
Gate Threshold Temperature
Coefficient
V
/T
J
GS
−2.0
GS(TH)
Drain−to−Source On Resistance
Drain−to−Source On Resistance
R
R
V
= −4.5V, I = −260 mA
2.9
2.7
4.1
6.1
73
4.0
3.4
5.3
10
DS(ON)
DS(ON)
GS
D
V
= −4.5V, I = −10 mA
GS
D
V
= −2.5 V, I = −1 mA
W
GS
D
V
= −1.8 V, I = −1 mA
D
GS
Forward Transconductance
g
V
= −5 V, I = −10 mA
mS
FS
DS
D
CAPACITANCES
Input Capacitance
C
15.3
4.3
ISS
Output Capacitance
Reverse Transfer Capacitance
C
V
GS
= 0 V, f = 1 MHz, V = −10 V
pF
OSS
RSS
DS
C
2.3
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6)
GS
Turn−On Delay Time
Rise Time
t
8.4
16
28
80
43
d(ON)
t
r
15.3
37.5
22.7
V
= −4.5 V, V = −5 V, I = −100 mA,
DD D
GS
ns
V
R
= 6 W
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
0.69
0.56
37
−1.2
J
V
= 0 V, I = −10 mA
S
GS
T = 125°C
J
Reverse Recovery Time
Charge Time
t
80
30
50
70
RR
t
a
15.9
21.1
20
ns
V
SD
= 0 V, V = −20 V,
DD
GS
dI /dt = 100 A/ms, I = −1.0 A
S
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTK3142P
TYPICAL PERFORMANCE CURVES
0.4
0.3
0.4
V
GS
= −4 V to −10 V
T = 25°C
J
V
≥ −5 V
DS
−3.0 V
T = 25°C
J
0.3
0.2
−2.5 V
−2.2 V
0.2
0.1
0
−2.0 V
−1.8 V
−1.6 V
−1.4 V
0.1
0
T = 150°C
J
T = −40°C
J
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
10
9
8
7
6
5
4
3
2
1
T = 25°C
J
I
= −0.26 A
D
T = 25°C
J
8
V
GS
= −2.5 V
7
6
5
4
3
2
1
0
V
GS
= −4.5 V
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
−I DRAIN CURRENT (AMPS)
D,
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
Figure 4. On−Resistance vs. Drain Current and
Figure 3. On−Resistance vs. Gate−to−Source
Gate Voltage
Voltage
9.0
1000
100
V
GS
= 0 V
V
GS
= −0.01 V
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
V
= −1.8 V
= −2.5 V
GS
T = 150°C
J
V
GS
10
1
T = 125°C
J
V
GS
= −4.5 V
−50 −25
0
25
50
75
100 125
150
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTK3142P
TYPICAL PERFORMANCE CURVES
30
25
20
1000
T = 25°C
GS
J
V
V
= −5 V
= −10 mA
= −4.5 V
DD
= 0 V
I
D
V
GS
100
10
1
C
iss
t
d(off)
15
10
5
t
f
t
d(on)
t
r
C
oss
C
rss
0
0
1
10
R , GATE RESISTANCE (OHMS)
100
2.5
5
7.5
10
12.5
15
17.5
20
−DRAIN−TO−SOURCE VOLTAGE (V)
G
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.3
V
GS
= 0 V
T = 150°C
J
125°C 25°C −40°C
0.2
0.1
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
Figure 9. Diode Forward Voltage vs. Current
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4
NTK3142P
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
NOTES:
−X−
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
A
b1
−Y−
3
E
HE
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
1
2
MILLIMETERS
2X b
C
DIM MIN
NOM
0.50
0.21
0.31
0.12
1.20
0.80
MAX
0.55
0.27
0.37
0.17
1.25
0.85
2X e
0.08 X Y
A
b
0.45
0.15
0.25
0.07
1.15
0.75
SIDE VIEW
TOP VIEW
b1
C
3X
L
D
1
E
0.40 BSC
1.20
0.29 REF
0.20
e
H E
L
1.15
0.15
1.25
0.25
L2
STYLE 3:
PIN 1. ANODE
2. ANODE
3X
L2
BOTTOM VIEW
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X 0.27
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTK3142P/D
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