SGR2N60UFDTM [ROCHESTER]
Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3;
| 型号： | SGR2N60UFDTM |
| 厂家： | 
Rochester Electronics |
| 描述： | Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 栅 |
| 文件： | 总10页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
SGR2N60UFD
Ultra-Fast IGBT
General Description
Features
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
•
•
•
•
High speed switching
Low saturation voltage : V
High input impedance
= 2.1 V @ I = 1.2A
CE(sat)
C
CO-PAK, IGBT with FRD : t = 45ns (typ.)
rr
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
E
C
G
D-PAK
E
G
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
Description
SGR2N60UFD
Units
V
V
V
Collector-Emitter Voltage
600
CES
GES
Gate-Emitter Voltage
± 20
V
Collector Current
@ T
=
25°C
2.4
A
C
I
C
Collector Current
@ T = 100°C
1.2
A
C
I
I
I
Pulsed Collector Current
10
A
CM (1)
F
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T = 100°C
1.5
12
A
C
A
FM
P
@ T
=
25°C
25
W
W
°C
°C
D
C
@ T = 100°C
10
C
T
-55 to +150
-55 to +150
J
T
stg
T
300
°C
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
R
R
R
(IGBT)
5.0
5.0
50
θJC
θJC
θJA
(DIODE)
--
Thermal Resistance, Junction-to-Ambient (PCB Mount)
--
(2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
C
∆B
/
VCES
J
= 0V, I = 1mA
0.6
V/°C
GE
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
CES
GE
, V = 0V
± 100
GE
GES
CE
On Characteristics
V
G-E Threshold Voltage
I
I
I
= 1.2mA, V = V
GE
3.5
--
4.5
2.1
2.6
6.5
2.6
--
V
V
V
GE(th)
C
C
C
CE
= 1.2A,
= 2.4A,
V
V
= 15V
= 15V
Collector to Emitter
Saturation Voltage
GE
GE
V
CE(sat)
--
Dynamic Characteristics
C
C
C
Input Capacitance
--
--
--
98
18
4
--
--
--
pF
pF
pF
ies
V
= 30V V = 0V,
, GE
CE
Output Capacitance
oes
res
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
t
t
t
t
Turn-On Delay Time
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
15
20
80
95
30
13
43
19
24
115
176
36
27
63
9
--
--
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
nC
nC
nC
nH
d(on)
Rise Time
r
Turn-Off Delay Time
Fall Time
130
160
--
V
R
= 300 V, I = 1.2A,
C
d(off)
f
CC
= 200Ω, V = 15V,
G
GE
Inductive Load, T = 25°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
C
on
off
--
70
--
ts
t
t
t
t
d(on)
r
--
Turn-Off Delay Time
Fall Time
200
250
--
V
= 300 V, I = 1.2A,
C
d(off)
f
CC
R
= 200Ω, V = 15V,
G
GE
Inductive Load, T = 125°C
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
C
on
off
ts
--
100
14
5
Q
Q
Q
g
V
V
= 300 V, I = 1.2A,
CE
GE
C
3
ge
gc
= 15V
1.5
7.5
3
L
Measured 5mm from PKG
--
e
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.4
1.3
45
Max.
1.7
--
Units
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
C
C
C
C
C
C
C
C
V
Diode Forward Voltage
I
= 2A
F
V
FM
--
=
--
80
--
t
Diode Reverse Recovery Time
ns
A
rr
--
75
=
--
1.5
2.5
60
3.0
--
Diode Peak Reverse Recovery
Current
I = 2A,
F
I
rr
di/dt=200A/us
--
=
--
135
--
Q
Diode Reverse Recovery Charge
nC
rr
--
120
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
12
10
8
6
5
4
3
2
1
0
Common Emitter
VGE = 15V
Common Emitter
20V
℃
TC = 25
℃
℃
TC
= 25
T
C = 125
15V
12V
6
VGE = 10V
4
2
0
0
2
4
6
8
0.5
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
4
3.0
VCC = 300V
Common Emitter
Load Current : peak of square wave
VGE = 15V
2.5
2.0
1.5
1.0
0.5
0.0
2.4A
1.2A
3
2
IC = 0.6A
1
0
Duty cycle : 50%
℃
T
C = 100
Power Dissipation = 4W
0
30
60
90
120
150
0.1
1
10
100
1000
℃
[
Case Temperature, TC
]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20
16
12
8
20
Common Emitter
Common Emitter
℃
TC = 125
℃
T
C = 25
16
12
8
2.4A
2.4A
4
4
1.2A
1.2A
8
IC = 0.6A
IC = 0.6A
0
0
0
4
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
160
120
80
100
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
±
15V
VCC = 300V, VGE
IC = 1.2A
=
℃
TC = 25
℃
℃
TC
= 25
Cies
TC = 125
Ton
Tr
Coes
Cres
40
0
10
1
10
Collector - Emitter Voltage, VCE [V]
30
10
100
Gate Resistance, RG [Ω]
500
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
600
100
Common Emitter
Common Emitter
±
15V
V
CC = 300V, VGE
=
±
15V
VCC = 300V, VGE
IC = 1.2A
=
IC = 1.2A
TC
℃
= 25
℃
℃
℃
TC
TC = 125
= 25
T
C = 125
Toff
Eon
Eoff
Tf
Toff
Eoff
100
50
Tf
10
5
10
100
Gate Resistance, RG [Ω]
500
10
100
Gate Resistance, RG [Ω]
500
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
100
1000
Common Emitter
Common Emitter
±
15V
V
R
CC = 300V, VGE
G = 200Ω
=
±
15V
VCC = 300V, VGE
RG = 200Ω
=
℃
℃
TC
TC = 125
= 25
℃
℃
TC
= 25
T
C = 125
Toff
Toff
Tf
Ton
Tr
Tf
100
10
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
15
12
9
100
Common Emitter
RL = 250 Ω
℃
Tc = 25
Common Emitter
±
15V
VCC = 300V, VGE
=
R
G = 200Ω
℃
℃
TC
= 25
TC = 125
300 V
Eon
Eon
6
200 V
VCE = 100 V
Eoff
10
3
Eoff
0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
Gate Charge, Qg [ nC ]
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
30
20
10
IC MAX. (Pulsed)
10
50us
100us
IC MAX. (Continuous)
㎳
1
1
DC Operation
1
0.1
Single Nonrepetitive
℃
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
0.01
0.1
0.3
1
10
100
1000
1
1000
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
0.2
1
0.1
0.05
0.02
0.1
Pdm
0.01
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
30
10
10
℃
℃
TC
TC = 100
= 25
VR = 200V
IF = 2A
℃
℃
TC
TC = 100
= 25
1
0.1
1
0
1
2
3
100
500
Forward Voltage Drop, VFM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
100
120
VR = 200V
IF = 2A
VR = 200V
IF = 2A
℃
℃
TC
TC = 100
= 25
℃
℃
TC
TC = 100
= 25
100
80
60
40
20
0
80
60
40
20
0
100
500
100
500
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
Package Dimension
D-PAK
6.60 ±0.20
5.34 ±0.30
2.30 ±0.10
0.50 ±0.10
(0.50)
(4.34)
(0.50)
MAX0.96
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30 ±0.20
2.30TYP
2.30TYP
[2.30±0.20]
[2.30±0.20]
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 ±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FAST®
FASTr™
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ISOPLANAR™
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MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
SLIENT SWITCHER® UHC™
SMART START™
SPM™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
UltraFET®
VCX™
POP™
Power247™
PowerTrench®
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QS™
QT Optoelectronics™ TinyLogic™
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FACT Quiet Series™ MicroPak™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H5
Product Folder - Fairchild P/N SGR2N60UFD - Discrete, High Performance IGBT with Diode
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General description | Features | Applications |
Product status/pricing/packaging | Models
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(PCNs)
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General description
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[E-
Distributor and field sales
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Fairchild's UFD series of Insulated Gate
Bipolar Transistors (IGBTs) provides low
conduction and switching losses. The UFD
series is designed for applications such as
motor control and general inverters where high
speed switching is a required feature.
Quality and reliability
This pagePrint version
Design tools
back to top
Features
technical information
buy products
technical support
my Fairchild
●
●
High Speed Switching
Low Saturation Voltage : V
= 2.1
CE(sat)
company
V @ I = 1.2A
C
●
●
High Input Impedance
CO-PAK, IGBT with FRD : t = 45ns
rr
(typ.)
back to top
Applications
AC &DC Motor controls, General
Purpose Inverters, Robotics, Servo
Controls
back to top
Product status/pricing/packaging
Product Folder - Fairchild P/N SGR2N60UFD - Discrete, High Performance IGBT with Diode
Product
Product status Pricing*
Package type
Leads Packing method
SGR2N60UFDTF
SGR2N60UFDTM
Full Production
Full Production
$0.68 TO-252(DPAK)
$0.68 TO-252(DPAK)
2
2
TAPE REEL
TAPE REEL
* 1,000 piece Budgetary Pricing
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Models
Package & leads
PSPICE
Condition
Temperature range
Software version
Revision date
Electrical
TO-252(DPAK)-2
25°C
9.2
Jun 28, 2002
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© Copyright 2002 Fairchild Semiconductor
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