SMBTA56E6327 [ROCHESTER]
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR;
| 型号： | SMBTA56E6327 |
| 厂家： | 
Rochester Electronics |
| 描述： | 500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件： | 总8页 (文件大小：756K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA56/MMBTA56
PNP Silicon AF Transistor
• Low collector-emitter saturation voltage
2
3
• Complementary type: SMBTA06 / MMBTA06(NPN)
1
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
SMBTA56/MMBTA56
s2G
SOT23
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Value
80
Unit
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CEO
CBO
EBO
80
4
500
1
mA
A
I
C
Peak collector current
Base current
I
CM
100
200
330
mA
I
B
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 79°C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 215
thJS
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-19
1
SMBTA56/MMBTA56
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
80
-
-
-
-
-
-
Collector-emitter breakdown voltage
I = 1 mA, I = 0
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
80
4
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
Collector-base cutoff current
I
I
µA
V
V
= 80 V, I = 0
-
-
-
-
0.1
20
CB
CB
E
= 80 V, I = 0 , T = 150 °C
E
A
Collector-emitter cutoff current
-
-
0.1
CEO
V
= 60 V, I = 0
CE
B
1)
-
DC current gain
h
FE
I = 10 mA, V = 1 V
100
100
-
-
-
-
C
CE
I = 100 mA, V = 1 V
C
CE
1)
Collector-emitter saturation voltage
I = 100 mA, I = 10 mA
V
V
-
-
0.25 V
CEsat
C
B
1)
Base-emitter voltage
I = 100 mA, V = 1 V
-
-
1.2
BE(ON)
C
CE
AC Characteristics
-
-
100
7
-
-
MHz
Transition frequency
f
T
I = 20 mA, V = 5 V, f = 20 MHz
C
CE
pF
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2007-04-19
2
SMBTA56/MMBTA56
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 1 V
I = ƒ(V
), h = 10
CE
C
CEsat
FE
EHP00852
EHP00850
103
103
mA
Ι C
h FE
100 C
25 C
-50C
100 C
25 C
102
5
102
101
100
-50 C
101
5
100
10 -1
10 0
10 1
10 2
Ι C
10 3
mA
0.0
0.5
V
1.0
VCEsat
Base-emitter saturation voltage
Collector current I = ƒ(V )
C
BE
I = ƒ(V
), h = 10
V = 1V
CE
C
BEsat
FE
EHP00849
103
mA
EHP00846
103
mA
100 ˚C
25 ˚C
-50 ˚C
Ι C
100 C
25 C
-50 C
Ι C
102
5
102
5
101
5
101
5
100
5
100
5
10-1
10-1
0
0.5
1.0
V
1.5
0
0.5
1.0
V
1.5
VBE
VBEsat
2007-04-19
3
SMBTA56/MMBTA56
Collector cutoff current I
= ƒ(T )
Transition frequency f = ƒ(I )
CBO
A
T
C
V
= 80 V
V
= parameter in V, f = 2 GHz
CE
CB
EHP00848
103
MHz
EHP00851
104
nA
f T
ΙCBO
5
max
103
5
102
5
102
typ
101
5
5
100
5
101
10-1
0
100
5 101
5 102
mA 103
50
100
C 150
TA
Ι C
Collector-base capacitance C = ƒ(V )
Total power dissipation P = ƒ(T )
tot S
cb
CB
Emitter-base capacitance C = ƒ(V )
eb
EB
65
pF
360
mW
55
50
45
40
35
30
25
20
15
10
5
300
270
240
210
180
150
120
90
CEB
60
30
CCB
22
0
0
V
0
4
8
12
16
0
15 30 45 60 75 90 105 120
150
°C
V
(V
)
T
S
CB EB
2007-04-19
4
SMBTA56/MMBTA56
Permissible Pulse Load R
= ƒ(t )
Permissible Pulse Load
thJS
p
P
/P
= ƒ(t )
totmax totDC
p
10 3
K/W
10 4
10 3
10 2
10 1
10 0
10 2
10 1
10 0
10 -1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 -7 10 -6 10 -5 10 -4 10 -3
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
tp
p
2007-04-19
5
Package SOT23
SMBTA56/MMBTA56
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-19
6
SMBTA56/MMBTA56
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-19
7
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