SMMBFJ310LT1 [ROCHESTER]
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN;
| 型号： | SMMBFJ310LT1 |
| 厂家： | 
Rochester Electronics |
| 描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, CASE 318-08, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBFJ309LT1,
MMBFJ310LT1
JFET − VHF/UHF Amplifier
Transistor
N−Channel
http://onsemi.com
Features
2 SOURCE
• Pb−Free Packages are Available
3
MAXIMUM RATINGS
GATE
Rating
Drain−Source Voltage
Symbol
Value
25
Unit
Vdc
V
DS
GS
1 DRAIN
Gate−Source Voltage
Gate Current
V
25
Vdc
I
10
mAdc
G
3
THERMAL CHARACTERISTICS
Characteristic
SOT−23 (TO−236)
CASE 318
Symbol
Max
Unit
1
STYLE 10
2
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
556
°C/W
°C
q
JA
MARKING DIAGRAM
T , T
J
−55 to +150
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
6x M G
G
1. FR−5 = 1.0 x 0.75 x 0.062 in.
1
6x = Device Code
x = U for MMBFJ309LT1
x = T for MMBFJ310LT1
= Date Code*
M
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
MMBFJ309LT1
SOT−23 3,000 / Tape & Reel
MMBFJ309LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
MMBFJ310LT1
SOT−23 3,000 / Tape & Reel
MMBFJ310LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
February, 2006 − Rev. 3
MMBFJ309LT1/D
MMBFJ309LT1, MMBFJ310LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I = −1.0 mAdc, V = 0)
V
−25
−
−
Vdc
(BR)GSS
G
DS
Gate Reverse Current (V = −15 Vdc)
I
−
−
−
−
−1.0
−1.0
nAdc
mAdc
GS
GSS
Gate Reverse Current (V = −15 Vdc, T = 125°C)
GS
A
Gate Source Cutoff Voltage
MMBFJ309
MMBFJ310
V
−1.0
−2.0
−
−
−4.0
−6.5
Vdc
GS(off)
(V = 10 Vdc, I = 1.0 nAdc)
DS
D
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
MMBFJ309
MMBFJ310
I
12
24
−
−
30
60
mAdc
Vdc
DSS
(V = 10 Vdc, V = 0)
DS
GS
Gate−Source Forward Voltage
(I = 1.0 mAdc, V = 0)
V
−
−
1.0
GS(f)
G
DS
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
|Y |
8.0
−
−
−
18
250
5.0
2.5
−
mmhos
mmhos
pF
fs
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
DS
D
Output Admittance
|y
|
os
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
DS
D
Input Capacitance
C
−
−
iss
rss
(V = −10 Vdc, V = 0 Vdc, f = 1.0 MHz)
GS
DS
Reverse Transfer Capacitance
(V = −10 Vdc, V = 0 Vdc, f = 1.0 MHz)
C
−
−
pF
GS
DS
Equivalent Short−Circuit Input Noise Voltage
(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)
e
n
−
10
Ǹ
nVń Hz
DS
D
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2
MMBFJ309LT1, MMBFJ310LT1
70
60
50
40
30
20
10
0
70
60
V
= 10 V
I
T = −ꢀ55°C
A
DS
50
40
30
20
10
+ꢀ25 °C
DSS
+ꢀ25 °C
+150°C
+150°C
+ꢀ25 °C
−ꢀ55°C
−1.0
0
−5.0
−4.0
−3.0
−2.0
I
D
− V , GATE−SOURCE VOLTAGE (VOLTS)
GS
I
− V , GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
GS
DSS
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
100 k
10 k
10
120
96
72
48
24
0
1.0 k
100
R
DS
Y
fs
Y
fs
7.0
C
gs
4.0
V
V
=
ꢀ2.3 V =
10
1.0 k
100
GS(off)
GS(off)
Y
os
= −ꢀ5.7 V =
C
gd
1.0
0
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
0
I , DRAIN CURRENT (mA)
D
V
, GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 2. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 3. On Resistance and Junction
Capacitance versus Gate−Source Voltage
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3
MMBFJ309LT1, MMBFJ310LT1
|S |, |S
|
|S |, |S |
12 22
21
11
0.85 0.45
0.79 0.39
0.73 0.33
0.67 0.27
0.61 0.21
0.55 0.15
0.060 1.00
0.048 0.98
0.036 0.96
0.024 0.94
0.012 0.92
0.90
30
24
18
12
6.0
0
3.0
2.4
1.8
1.2
0.6
S
22
V
= 10 V
= 10 mA
= 25°C
DS
I
D
S
21
T
A
Y
11
V
= 10 V
= 10 mA
= 25°C
DS
I
D
T
A
Y
Y
21
22
S
11
S
12
Y
12
100
200
300
500 700 1000
100
200
300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 4. Common−Gate Y Parameter
Magnitude versus Frequency
Figure 5. Common−Gate S Parameter
Magnitude versus Frequency
q
, q
21 11
q , q
12 22
q
, q
11 12
q
, q
21 22
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
−ꢀ20° 87°
−ꢀ20°
−ꢀ20° 120°
−ꢀ40° 100°
−ꢀ60° 80°
−ꢀ80° 60°
−ꢀ100 ° 40°
−ꢀ120 ° 20°
0
q
11
q
22
q
21
−ꢀ40° 86°
−ꢀ60°
q
−ꢀ20°
−ꢀ40°
−ꢀ60°
−ꢀ80°
−ꢀ100 °
22
q
21
−ꢀ80° 85°
−ꢀ100 °
−ꢀ120 ° 84°
−ꢀ140 °
q
21
q
12
q
q
12
11
V
I
= 10 V
V
I
T
A
= 10 V
= 10 mA
= 25°C
DS
= 10 mA
= 25°C
−ꢀ160 ° 83°
−ꢀ180 °
DS
q
11
D
D
T
A
130°
0°
100
−ꢀ200 ° 82°
200
300
500 700 1000
100
200
300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Common−Gate Y Parameter
Phase−Angle versus Frequency
Figure 7. S Parameter Phase−Angle
versus Frequency
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4
MMBFJ309LT1, MMBFJ310LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
3
H
E
E
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.25
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
e
q
A
L
A1
L1
VIEW C
H
E
2.10
2.40
2.64
0.083
0.094
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBFJ309LT1/D
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