2SC5147E [ROHM]
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN;
| 型号： | 2SC5147E |
| 厂家： | 
ROHM |
| 描述： | Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN 局域网 放大器 晶体管 |
| 文件： | 总1页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5147
Transistors
Medium Power Transistor
(Chroma Output) (300V, 0.1A)
2SC5147
!Features
!External dimensions (Units : mm)
CEO
1) High breakdown voltage. (BV
= 300V)
2) Low collector output capacitance.
10.0
4.5
CB
(Typ.3pF at V = 30V)
2.8
3.2
φ
3) Wide SOA. (safe operating area)
4) Ideal for color TV chroma output and amplification of
video signals.
1.2
1.3
0.8
0.75
( )
(1) Base Gate
2.54
2.54
)
2.6
(
) (
) (
)
1
2
(
(
3
(
)
)
(2) Collector Drain
(
)
)
(
1
2
3
(3) Emitter Source
!Absolute maximum ratings (Ta=25°C)
ROHM : TO-220FN
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
VCBO
VCEO
VEBO
300
V
300
V
5
100
V
I
C
mA (DC)
2
W
Collector power dissipation
PC
10
W (Tc = 25°C)
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55~+150
!Packaging specifications and hFE
Type
2SC5147
Package
TO-220FN
h
FE
DE
-
Code
Basic ordering unit (pieces)
500
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
300
-
-
-
V
V
I
I
I
C
C
= 50µA
= 100µA
= 50µA
300
-
5
-
-
-
-
V
E
I
CBO
EBO
CE(sat)
FE
0.5
0.5
1
µA
µA
V
V
CB = 200V
Emitter cutoff current
I
-
-
V
EB = 4V
Collector-emitter suturation voltage
DC current transfer ratio
V
-
0.2
-
I
C/I
B
= 50mA/5mA
= 10V/10mA
*
h
60
50
-
200
-
-
V
V
V
CE/I
C
Transition frequency
f
T
100
3
MHz
pF
CE = 30V , I
CB = 30V , I
E
= −20mA , f = 30MHz
= 0A , f = 1MHz
Output capacitance
Cob
-
E
*
Measured using pulse current.
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