2SC5873STPQ [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3 PIN;![2SC5873STPQ](http://pdffile.icpdf.com/pdf1/p00095/img/icpdf/2SC5873S_503204_icpdf.jpg)
型号: | 2SC5873STPQ |
厂家: | ![]() |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SPT, 3 PIN 晶体 晶体管 |
文件: | 总4页 (文件大小:79K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
2SC5873S
Transistors
Medium power transistor (30V, 0.5A)
2SC5873S
zExternal dimensions (Unit : mm)
zFeatures
1) High speed switching.
(Tf : Typ. : 50ns at IC = 500mA)
2) Low saturation voltage, typically
4.0
2.0
SPT
0.45
2.5
:
(Typ. 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2085S
0.5
0.45
5.0
(1) Emitter
(2) Collector
(3) Base
Taping specifications
(1) (2) (3)
Symbol : C5873S
zApplications
Small signal low frequency amplifier
High speed switching
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Package
Taping
TP
Type
Code
Basic ordering unit (pieces)
5000
2SC5873S
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
30
Unit
V
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
30
V
6
DC
Collector current
I
C
A
0.5
1.0
300
150
∗
Pulsed
I
CP
A
P
C
mW
°C
°C
Power dissipation
Tj
Junction temperature
Tstg
Range of storage temperature
−55 to 150
∗Pw=10ms
Rev.A
1/3
2SC5873S
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
30
30
6
Typ.
Max.
−
−
−
1.0
Unit
V
Condition
=1mA
=100µA
=100µA
CB=20V
EB=4V
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
−
−
−
−
−
I
I
I
C
C
V
V
E
I
CBO
µA
µA
−
−
V
V
I
EBO
1.0
Emitter cut-off current
I
I
C
=100mA
=10mA
CE=2V
V
CE (sat)
300
390
mV
Collector-emitter saturation voltage
DC current gain
−
150
B
V
hFE
−
120
−
I
C=50mA
∗
∗
V
CE=10V
f
T
−
−
MHz
pF
Transition frequency
−
−
300
5
I
E
= −100mA
f=10MHz
CB=10V
=0mA
f=1MHz
V
Cob
Corrector output capacitance
IE
I
I
I
C
=500mA
Ton
Tstg
Tf
−
−
−
ns
ns
ns
Turn-on time
Storage time
Fall time
−
−
−
40
120
50
BB21= −50mA
=50mA
V
CC 25V
∗Non repetitive pulse
zhFE RANK
Q
R
120−270
180−390
zElectrical characteristic curves
1000
100
10
1000
10
Ta=25°C
VCE=2V
V
CC=25V
IC / IB=10 / 1
1
Tstg
100ms
10ms
1ms
0.1
100
Ta=125°C
Ta=25°C
Ta= −40°C
Ton
Tf
DC
0.01
Single
non repetitive
Pulsed
0.1
10
0.01
0.001
0.001
0.01
0.1
1
0.1
COLLECTOR CURRENT : I
1
1
10
100
COLLECTOR CURRENT : I
C
(A)
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 DC Current Gain vs.
Fig.2 Switching Time
Fig.1 Safe Operating Area
Collector Current (Ι)
1000
100
10
10
10
Ta=25°C
Ta=25°C
IC / IB=10 / 1
1
0.1
1
0.1
Ta=125°C
Ta=25°C
I
I
C
C
/ I
/ I
B
B
=20 / 1
=10 / 1
V
V
V
CE=5V
CE=3V
CE=2V
Ta= −40°C
0.01
0.01
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
Fig.4 DC Current Gain vs.
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Collector Current (ΙΙ)
Rev.A
2/3
2SC5873S
Transistors
1000
100
10
10
1
Ta=25°C
I
C
/ I
B
=10 / 1
VCE=2V
V
CE=10V
Ta=125°C
Ta=25°C
1
0.1
Ta= −40°C
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0.001
0.01
0.1
1
0
0.5
1
1.5
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Base-Emitter Saturation
Fig.8 Grounded Emitter
Fig.9 Transition Frequency
Voltage vs. Collecter Current
Propagation Characteristics
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
BASE TO COLLECTOR VOLTAGE : VCB (V)
Fig.10 Collector Output Capacitance
zSwitching characteristics measurement circuits
RL=50Ω
V
IN
I
I
B1
B2
I
C
V
CC 25V
P
W
P
W
50 S
Duty cycle ≤ 1%
I
B1
I
B2
Base current
waveform
90%
I
C
Collector current
waveform
10%
Ton
Tstg Tf
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00235/img/page/2SC5876FRAT1_1379853_files/2SC5876FRAT1_1379853_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00235/img/page/2SC5876FRAT1_1379853_files/2SC5876FRAT1_1379853_2.jpg)
2SC5876FRAT106Q
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN
ROHM
![](http://pdffile.icpdf.com/pdf2/p00212/img/page/2SC587_1196741_files/2SC587_1196741_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00212/img/page/2SC587_1196741_files/2SC587_1196741_2.jpg)
2SC5876T106
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明