2SCR502EB [ROHM]
根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。;
| 型号： | 2SCR502EB |
| 厂家： | 
ROHM |
| 描述： | 根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。 |
| 文件： | 总8页 (文件大小：1993K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SCR502EB / 2SCR502UB
NPN 500mA 30V General purpose transistors
Datasheet
lOutline
Parameter
Value
EMT3F
UMT3F
V
CEO
30V
I
C
0.5A
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ꢀ
2SCR502EB
SOT-416FL
2SCR502UB
SOT-323FL
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llFeatures
1)General purpose.
llInner circuit
2)Complementary PNP types :
ꢀ2SAR502EB(EMT3F)/2SAR502UB(UMT3F)
3)Collector current is large.
4)Low V
.
CE(sat)
llApplication
LOW FREQUENCYAMPLIFIER
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llPackaging specifications
Basic
Package
size
Taping
code
Reel size Tape width
Part No.
Package
ordering
Marking
(mm)
(mm)
unit.(pcs)
2SCR502EB
2SCR502UB
EMT3F
UMT3F
1616
2021
TL
TL
180
180
8
8
3000
3000
LW
LW
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
1/7
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR502EB / 2SCR502UB
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
30
VCEO
30
V
VEBO
6
0.5
V
*1
IC
A
Collector current
Base current
*2
ICP
1
A
IB
0.15
150
A
2SCR502EB
2SCR502UB
*3
PD
Power dissipation
mW
200
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
I = 100μA
Unit
Min.
30
Max.
-
Collector-base breakdown
voltage
BVCBO
BVCEO
-
-
V
V
C
Collector-emitter breakdown
voltage
I = 1mA
C
30
-
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = 100μA
6
-
-
V
nA
nA
mV
-
E
V
CB
= 25V
-
-
200
200
300
500
IEBO
V = 4V
EB
-
-
-
100
-
*4
Collector-emitter saturation voltage
DC current gain
I = 200mA, I = 10mA
C
V
B
CE(sat)
h
FE
V
CE
= 2V, I = 100mA
200
C
V
= 10V, I = -100mA,
E
CE
*4
Transition frequency
-
-
360
3
-
MHz
pF
f
T
f = 100MHz
V
CB
= 10V, I = 0A,
E
Cob
Output capacitance
-
f = 1MHz
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*1 Limited by power dissipation.
*2 Pw=10ms, Single pulse.
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*3 Each terminal mounted on a reference land.
*4 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/7
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR502EB / 2SCR502UB
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Grounded Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain
Fig.4 DC Current Gain
ꢀꢀꢀꢀvs. Collector Current(I)
ꢀꢀꢀꢀvs. Collector Current(II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/7
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR502EB / 2SCR502UB
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation Voltage
Fig.6 Collector-Emitter Saturation Voltage
ꢀꢀꢀꢀvs. Collector Current(I)
ꢀꢀꢀꢀvs. Collector Current(II)
Fig.7 Base-Emitter Saturation Voltage
Fig.8 Gain Bandwidth Product
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀvs. Emitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/7
20150730 - Rev.002
ꢀ ꢀ ꢀ
2SCR502EB / 2SCR502UB
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter input capacitance vs.
Fig.10 Safe Operating Area
ꢀEmitter-Base Voltage Collector output
ꢀcapacitance vs. Collector-Base Voltage
Fig.11 Safe Operating Area
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/7
20150730 - Rev.002
2SCR502EB / 2SCR502UB
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/7
20150730 - Rev.002
2SCR502EB / 2SCR502UB
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/7
20150730 - Rev.002
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