2SCR512PT100 [ROHM]
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN;
| 型号： | 2SCR512PT100 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, MPT3, 3 PIN 开关 晶体管 |
| 文件： | 总7页 (文件大小：1917K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SCR512P
Middle Power Transistors (30V / 2V)
Datasheet
llOutline
SOT-89
ꢀ
ꢀ
ꢀ
Parameter
Value
30V
2A
SC-62
ꢀ
V
CEO
ꢀ
I
C
MPT3
llFeatures
1)Low saturation voltage, typically
ꢀV =400mV(Max.)
llInner circut
CE(sat)
ꢀ(I /I =700mA/35mA)
C B
2)High speed switching
llApplication
LOW FREQUENCYAMPLIFIR, HIGH SPEED SWIHING
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llPackaging spations
Basic
Package
size
Taping Reel size Tape width
Part .
Packe
ordering
Marking
NB
code
(mm)
(mm)
unit.(pcs)
SOT-89
(MPT3)
2SCR512P
4540
T100
180
12
1000
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© 2015 ROHMCo., Ltd. All rights reserved.
1/6
20150731 - Rev.003
ꢀ
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2SCR512P
ꢀ ꢀ ꢀ ꢀꢀ
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
30
30
V
6
V
2
A
Collector current
Power dissipation
*1
ICP
4
0.5
A
*2
PD
W
W
℃
℃
*3
PD
2.
Tj
Junction temperature
150
Tstg
Range of storage temperature
-o +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
30
Typ.
Max.
-
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
BVCBO
BVCEO
I = 100μA
-
V
V
C
I = 1mA
0
-
-
C
BVEBO
ICBO
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I = μA
6
-
-
V
μA
μA
mV
-
E
V
CB
V
EB
30V
= 4V
-
-
1.0
1.0
400
500
IEBO
-
-
-
200
-
4
Collector-emitter saturation voltage
DC current gain
I = 700mA, = 35mA
C
V
C(sat)
V
CE
= = 100mA
200
V
= 10, I = -100mA,
E
CE
*4
Transition frequency
Output capacitan
Turn-On time
-
-
-
-
-
320
10
-
-
-
-
-
MHz
pF
ns
f
T
f = 100MHz
V
CB
= 10V, I = 0A,
E
Cob
ton
tstg
tf
f = 1MHz
I = 1A,
C
25
I
I
= 100mA,
= -100mA,
⋍ 10V,
B1
B2
Storage
240
20
ns
V
CC
R = 10Ω
See test circuit
L
all time
ns
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*1 Pw=10ms, Single pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
*4 Pulsed
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ꢀ
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/6
20150731 - Rev.003
ꢀ ꢀ ꢀ
2SCR512P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.1 Ground Emitter Propagation
Fig.2 Typical Output Characteristics
ꢀꢀꢀꢀCharacteristics
Fig.3 DC Current Gain vs. Cotor
ig.4 DC Current Gain vs. Collector
ꢀꢀꢀꢀCurrent (I)
ꢀꢀꢀꢀCurrent (II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/6
20150731 - Rev.003
ꢀ ꢀ ꢀ
2SCR512P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.5 Collector-Emitter Saturation
Fig.6 Collector-Emitter Saturation
ꢀꢀꢀꢀVoltage vs. Collector Current (I)
ꢀꢀꢀꢀVoltage vs. Collector Current (II)
Fig.7 Base-Emitter Saturation ltage
ig.8 Gain Bandwidth Product vs.
ꢀꢀꢀꢀvs. Collector Current
ꢀꢀꢀꢀEmitter Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/6
20150731 - Rev.003
ꢀ ꢀ ꢀ
2SCR512P
Datasheet
llElectrical characteristic curves(T = 25°C)
a
Fig.9 Emitter Input Capacitance vs.
ꢀꢀꢀꢀEmitter-Base Voltage
Fig.10 Safe Operating Area
ꢀꢀꢀ Collector Output Capacitance vs.
ꢀꢀꢀ Collector-Base Voltage
SWITHING TIME TESCIRCUIT
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© 2015 ROHMCo., Ltd. All rights reserved.
5/6
20150731 - Rev.003
2SCR512P
ꢀ ꢀ ꢀ
Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/6
20150731 - Rev.003
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