2SD1781K [ROHM]
Medium Power Transistor (32V, 0.8A); 中等功率晶体管（ 32V ， 0.8A ）
| 型号： | 2SD1781K |
| 厂家： | 
ROHM |
| 描述： | Medium Power Transistor (32V, 0.8A) |
| 文件： | 总4页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1781K
Transistors
Medium Power Transistor (32V, 0.8A)
2SD1781K
zExternal dimensions (Unit : mm)
zFeatures
1) Very Low VCE(sat).
2.9 0.2
1.9 0.2
0.95 0.95
+
0.2
VCE(sat) = −0.1V(Typ.)
1.1
−0.1
（IC / IB= 500ｍA / 50mA）
2) High current capacity in compact package.
3) Complements the 2SB1197K.
0.8 0.1
(2)
(1)
0~0.1
(3)
+
0.1
0.15
+
0.1
−0.06
0.4
−0.05
zStructure
Epitaxial planar type
NPN silicon transistor
All terminals have
same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : AF
∗
Denotes hFE
∗
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
40
32
V
V
V
5
I
C
0.8
1.5
200
150
A (DC)
A (Pulse)
mW
Collector current
I
CP
∗
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
°C
Tstg
−55 to
+
150
°C
Single pulse Pw=100ms
∗
Rev.A
1/3
2SD1781K
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
40
32
5
I
I
I
C
=50
=1mA
=50
µ
A
−
−
V
C
−
−
V
E
µA
I
CBO
−
−
0.5
0.5
0.4
390
−
µ
A
A
V
V
CB=20V
EB=4V
Emitter cutoff current
I
EBO
−
−
µ
Collector-emitter saturation voltage
DC current transfer ratio
V
CE(sat)
−
0.1
−
V
IC/IB=500mA/50mA
h
FE
120
−
−
V
V
V
CE=3V, I
CE=5V, I
C
=100mA
= −50mA, f=100MHz
=0A, f=1MHz
Transition frequency
f
T
150
15
MHz
pF
E
Output capacitance
Cob
−
−
CB=10V, I
E
zPackaging specifications and hFE
hFE values are classified as follows :
Item
Q
R
Package
Code
Taping
T146
3000
hFE
120 to 270 180 to 390
Basic ordering
Type
hFE
unit (pieces)
2SD1781K
QR
zElectrical characteristic curves
1000
400
300
200
100
1000
500
Ta
VCE=6V
=
25°C
VCE=5V
Tc=25°C
500
1mA
1
200
100
50
900µA
Ta=100°C
800µA
200
100
50
25°C
700µA
600µA
500µA
400µA
300µA
20
10
5
−55°C
2
1
200µA
100µA
0.5
20
10
0.2
0.1
0
I =0µA
B
0
0
1
2
5
10 20
50 100 200 500 1000
(mA)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
2
4
6
8
10
COLLECTOR CURRENT : I
C
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 DC current gain vs. collector
current
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics
Rev.A
2/3
2SD1781K
Transistors
1000
500
1000
500
1000
500
Ta=25°C
lC/lB=10
Ta
VCE=5V
=
25°C
200
100
200
100
50
200
100
50
Ta=100°C
25°C
−55°C
I
C/I
B
=50
50
20
20
10
20
20
10
10
5
10
5
1
2
5
10 20 50 100 200 500 1000
1
2
5
10 20 50 100 200 500 1000
−1 −2
−5 −10 −20
−50 −100 −200
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current (
Fig.5 Collector-emitter saturation
voltage vs. collector current (
Fig.6 Gain bandwidth product vs.
emitter current
)
)
100
Ta
1MHz
0A
=25°C
Ta
1MHz
0A
=25°C
f
=
200
100
50
f
=
I =
E
I =
C
50
20
10
5
20
10
5
0.1 0.2 0.5 1.0 2.0 5.0 10 20
50
0.1 0.2
0.5 1.0
2.0
5.0 10
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.8 Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
2SD1781KT146
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
©2020 ICPDF网 联系我们和版权申明